公开(公告)号：US20230366088A1

公开(公告)日：2023-11-16

申请号：US18227058

申请日：2023-07-27

Applicant: Applied Materials, Inc.

Inventor： Joseph AuBuchon ,  Kevin Griffin ,  Hanhong Chen

IPC: C23C16/455 ,  H01L21/67 ,  H01L21/02

CPC classification number: C23C16/45557 ,  C23C16/45527 ,  H01L21/67253 ,  H01L21/0228 ,  C23C16/45544

Abstract: Methods for controlling pulse shape in ALD processes improves local non-uniformity issues of films deposited on substrate surface. The methods include using a variable flow valve creating predetermined pulse shape when a reactant is provided on a substrate surface.

公开(公告)号：US11315769B2

公开(公告)日：2022-04-26

申请号：US17150702

申请日：2021-01-15

Applicant: Applied Materials, Inc.

Inventor： Kallol Bera ,  Anantha K. Subramani ,  John C. Forster ,  Philip A. Kraus ,  Farzad Houshmand ,  Hanhong Chen

IPC: H01J37/32 ,  H01L21/687 ,  H01L21/02 ,  C23C16/50 ,  C23C16/455 ,  H01L21/67 ,  C23C16/34 ,  C23C16/509 ,  C23C16/40 ,  C23C16/458 ,  C23C16/44

Abstract: Plasma source assemblies comprising an RF hot electrode having a body and at least one return electrode spaced from the RF hot electrode to provide a gap in which a plasma can be formed. An RF feed is connected to the RF hot electrode at a distance from the inner peripheral end of the RF hot electrode that is less than or equal to about 25% of the length of the RF hot electrode.

公开(公告)号：US10985009B2

公开(公告)日：2021-04-20

申请号：US16374345

申请日：2019-04-03

Applicant: Applied Materials, Inc.

Inventor： Lakmal Charidu Kalutarage ,  Mark Saly ,  David Thompson ,  William John Durand ,  Kelvin Chan ,  Hanhong Chen ,  Philip Allan Kraus

IPC: H01L21/02 ,  C23C16/513 ,  C23C16/26

Abstract: Embodiments include a method for forming a carbon containing film. In an embodiment, the method comprises flowing a precursor gas into a processing chamber. For example the precursor gas comprises carbon containing molecules. In an embodiment, the method further comprises flowing a co-reactant gas into the processing chamber. In an embodiment, the method further comprises striking a plasma in the processing chamber. In an embodiment plasma activated co-reactant molecules initiate polymerization of the carbon containing molecules in the precursor gas. Embodiments may also include a method that further comprises depositing a carbon containing film onto a substrate in the processing chamber.

公开(公告)号：US20210050186A1

公开(公告)日：2021-02-18

申请号：US16990306

申请日：2020-08-11

Applicant: Applied Materials, Inc.

Inventor： Hanhong Chen ,  Arkaprava Dan ,  Joseph AuBuchon ,  Kyoung Ha Kim ,  Philip A. Kraus

IPC: H01J37/32 ,  H01L21/285 ,  H01L21/768 ,  C23C16/34 ,  C23C16/511

Abstract: A method of depositing titanium nitride is disclosed. Some embodiments of the disclosure provide a PEALD process for depositing titanium nitride which utilizes a direct microwave plasma. In some embodiments, the direct microwave plasma has a high plasma density and low ion energy. In some embodiments, the plasma is generated directly above the substrate surface.

公开(公告)号：US20190333760A1

公开(公告)日：2019-10-31

申请号：US16374345

申请日：2019-04-03

Applicant: Applied Materials, Inc

Inventor： Lakmal Charidu Kalutarage ,  Mark Saly ,  David Thompson ,  William John Durand ,  Kelvin Chan ,  Hanhong Chen ,  Philip Allan Kraus

IPC: H01L21/02 ,  C23C16/26 ,  C23C16/513

Abstract: Embodiments include a method for forming a carbon containing film. In an embodiment, the method comprises flowing a precursor gas into a processing chamber. For example the precursor gas comprises carbon containing molecules. In an embodiment, the method further comprises flowing a co-reactant gas into the processing chamber. In an embodiment, the method further comprises striking a plasma in the processing chamber. In an embodiment plasma activated co-reactant molecules initiate polymerization of the carbon containing molecules in the precursor gas. Embodiments may also include a method that further comprises depositing a carbon containing film onto a substrate in the processing chamber.

公开(公告)号：US20250163578A1

公开(公告)日：2025-05-22

申请号：US18627046

申请日：2024-04-04

Applicant: Applied Materials, Inc.

Inventor： Hanhong Chen ,  Kenneth Brian Doering ,  Sanjeev Baluja ,  Chi-Chou Lin ,  Kevin Griffin ,  Joseph AuBuchon ,  Zhejun Zhang ,  Rohit Ode ,  Tejas Umesh Ulavi

IPC: C23C16/455 ,  H01J37/32

Abstract: Plasma showerhead assemblies are disclosed comprising a conductive plate having a plurality of the conductive plate openings, a dielectric faceplate having a thickness and a plurality of dielectric faceplate gas openings extending through the dielectric faceplate thickness in fluid communication with the plurality of the conductive plate gas openings. A conductive insert is disposed within at least one of the dielectric faceplate gas openings or adjacent o-rings included in the plasma showerhead assemblies.

公开(公告)号：US12119221B2

公开(公告)日：2024-10-15

申请号：US18125509

申请日：2023-03-23

Applicant: Applied Materials, Inc.

Inventor： Hanhong Chen ,  Philip A. Kraus ,  Joseph AuBuchon

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/455

CPC classification number: H01L21/0228 ,  C23C16/34 ,  C23C16/45542 ,  H01L21/0217 ,  H01L21/02186 ,  H01L21/02205 ,  H01L21/02211 ,  H01L21/02274

Abstract: A method of depositing nitride films is disclosed. Some embodiments of the disclosure provide a PEALD process for depositing nitride films which utilizes separate reaction and nitridation plasmas. In some embodiments, the nitride films have improved growth per cycle (GPC) relative to films deposited by thermal processes or plasma processes with only a single plasma exposure. In some embodiments, the nitride films have improved film quality relative to films deposited by thermal processes or plasma processes with only a single plasma exposure.

公开(公告)号：US11823870B2

公开(公告)日：2023-11-21

申请号：US16990306

申请日：2020-08-11

Applicant: Applied Materials, Inc.

Inventor： Hanhong Chen ,  Arkaprava Dan ,  Joseph AuBuchon ,  Kyoung Ha Kim ,  Philip A. Kraus

IPC: H01L21/285 ,  H01J37/32 ,  C23C16/34 ,  H01L21/768 ,  C23C16/511

CPC classification number: H01J37/32201 ,  C23C16/34 ,  C23C16/511 ,  H01L21/28568 ,  H01L21/76841 ,  H01J2237/3321

Abstract: A method of depositing titanium nitride is disclosed. Some embodiments of the disclosure provide a PEALD process for depositing titanium nitride which utilizes a direct microwave plasma. In some embodiments, the direct microwave plasma has a high plasma density and low ion energy. In some embodiments, the plasma is generated directly above the substrate surface.

公开(公告)号：US11586789B2

公开(公告)日：2023-02-21

申请号：US17224545

申请日：2021-04-07

Applicant: Applied Materials, Inc.

Inventor： Dhritiman Subha Kashyap ,  Chaowei Wang ,  Kartik Shah ,  Kevin Griffin ,  Karthik Ramanathan ,  Hanhong Chen ,  Joseph AuBuchon ,  Sanjeev Baluja

IPC: G06F30/27 ,  G06F30/10

Abstract: Methods, software systems and processes to develop surrogate model-based optimizers for controlling and optimizing flow and pressure of purges between a showerhead and a heater having a substrate support to control non-uniformity inherent in a processing chamber due to geometric configuration and process regimes. The flow optimizer process utilizes experimental data from optimal process space coverage models, generated simulation data and statistical machine learning tools (i.e. regression models and global optimizers) to predict optimal flow rates for any user-specified process regime.

公开(公告)号：US20210087681A1

公开(公告)日：2021-03-25

申请号：US17025025

申请日：2020-09-18

Applicant: Applied Materials, Inc.

Inventor： Joseph AuBuchon ,  Sanjeev Baluja ,  Michael Rice ,  Arkaprava Dan ,  Hanhong Chen

IPC: C23C16/458 ,  C23C16/52 ,  C23C16/455

Abstract: Apparatus and methods to process one or more substrates are described. A plurality of process stations are arranged in a circular configuration around a rotational axis. A support assembly with a rotatable center base defining a rotational axis, at least two support arms extending from the center base and heaters on each of the support arms is positioned adjacent the processing stations so that the heaters can be moved amongst the various process stations to perform one or more process condition. The support assembly configured to offset the position of the substrate with respect to the processing stations.