公开(公告)号：US20210225643A1

公开(公告)日：2021-07-22

申请号：US17152592

申请日：2021-01-19

Applicant: ASM IP Holding B.V.

Inventor： Aurélie Kuroda ,  Ryoko Zhang ,  Masaki Tokunaga ,  Ling-Chi Hwang ,  Makoto Igarashi

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/44 ,  C23C16/509

Abstract: Methods and systems for pretreating a surface prior to depositing silicon nitride on the surface are disclosed. Exemplary methods include pretreating the surface by exposing the surface to activated species formed from one or more gases comprising nitrogen and hydrogen. The step of pretreating can additionally include a step of exposing the surface to a gas comprising silicon.

公开(公告)号：US20250066921A1

公开(公告)日：2025-02-27

申请号：US18806917

申请日：2024-08-16

Applicant: ASM IP Holding B.V.

Inventor： Ranjit Rohidas Borude ,  Annisa Noorhidayati ,  Agung Setiadi ,  Hideaki Fukuda ,  Makoto Igarashi

IPC: C23C16/52 ,  C23C16/34 ,  C23C16/455 ,  C23C16/56 ,  H01J37/32 ,  H01L21/02 ,  H01L21/67

Abstract: A method and system for depositing silicon using a multiple-chamber reactor are disclosed. An exemplary method includes performing one or more deposition cycles and performing a treatment, etch and/or cure process.

公开(公告)号：US20250011927A1

公开(公告)日：2025-01-09

申请号：US18889542

申请日：2024-09-19

Applicant: ASM IP Holding B.V.

Inventor： Shinya Yoshimoto ,  Takahiro Onuma ,  Makoto Igarashi ,  Yukihiro Mori ,  Hideaki Fukuda ,  René Henricus Jozef Vervuurt ,  Timothee Blanquart

IPC: C23C16/455 ,  C23C16/46 ,  C23C16/52

Abstract: In accordance with some embodiments herein, methods and apparatuses for flowable deposition of thin films are described. Some embodiments herein relate to cyclical processes for gap-fill in which deposition is followed by a thermal anneal and repeated. In some embodiments, the deposition and thermal anneal are carried out in separate station. In some embodiments second module is heated to a higher temperature than the first station. In some embodiments, the thermal anneal comprises RTA.

公开(公告)号：US12129546B2

公开(公告)日：2024-10-29

申请号：US17451299

申请日：2021-10-18

Applicant: ASM IP HOLDING B.V.

Inventor： Shinya Yoshimoto ,  Takahiro Onuma ,  Makoto Igarashi ,  Yukihiro Mori ,  Hideaki Fukuda ,  Rene Henricus Jozef Vervuurt ,  Timothee Blanquart

IPC: C23C16/455 ,  C23C16/46 ,  C23C16/52

CPC classification number: C23C16/45527 ,  C23C16/45544 ,  C23C16/45553 ,  C23C16/46 ,  C23C16/52

Abstract: In accordance with some embodiments herein, methods and apparatuses for flowable deposition of thin films are described. Some embodiments herein relate to cyclical processes for gap-fill in which deposition is followed by a thermal anneal and repeated. In some embodiments, the deposition and thermal anneal are carried out in separate station. In some embodiments second module is heated to a higher temperature than the first station. In some embodiments, the thermal anneal comprises RTA.

公开(公告)号：US20230298885A1

公开(公告)日：2023-09-21

申请号：US18185625

申请日：2023-03-17

Applicant: ASM IP Holding, B.V.

Inventor： Ranjit Borude ,  Shinya Yoshimoto ,  Makoto Igarashi ,  Jhoelle Roche Guhit ,  Pamarti Viswanath

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/34 ,  C23C16/455

CPC classification number: H01L21/02348 ,  H01J37/32449 ,  H01J37/32899 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/02222 ,  C23C16/345 ,  C23C16/45536 ,  C23C16/45553 ,  H01J37/32357 ,  H01J2237/332 ,  H01J37/32733

Abstract: Methods and related systems for at least partially filling recesses comprised in a substrate with a gap filling fluid. The gap filling fluid comprises a Si—N bond. The methods comprise exposing the substrate to a nitrogen and hydrogen-containing gas on the one hand and to vacuum ultraviolet light on the other hand.