公开(公告)号：US11056385B2

公开(公告)日：2021-07-06

申请号：US16213479

申请日：2018-12-07

Applicant: ASM International N.V.

Inventor： Suvi P. Haukka ,  Antti Niskanen ,  Marko Tuominen

IPC: H01L21/768 ,  H01L21/285 ,  C23C16/04 ,  C23C16/14 ,  H01L21/02 ,  H01L21/3105 ,  C23C16/455 ,  H01L23/532

Abstract: Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on copper instead of insulating or dielectric materials. In some embodiments, a first precursor forms a layer on the first surface and is subsequently reacted or converted to form a metallic layer. The deposition temperature may be selected such that a selectivity of above about 50% or even about 90% is achieved.

公开(公告)号：US09469899B2

公开(公告)日：2016-10-18

申请号：US14557874

申请日：2014-12-02

Applicant: ASM International N.V.

Inventor： Hannu Huotari ,  Marko Tuominen ,  Miika Leinikka

IPC: H01L21/20 ,  C23C16/455 ,  C23C16/34 ,  C23C16/32 ,  C23C16/38 ,  C23C16/40 ,  H01L21/28 ,  H01L29/66 ,  H01L29/51

CPC classification number: C23C16/45525 ,  C23C16/32 ,  C23C16/34 ,  C23C16/38 ,  C23C16/40 ,  H01L21/28079 ,  H01L29/517 ,  H01L29/66583

Abstract: Processes are provided for selectively depositing thin films comprising one or more noble metals on a substrate by vapor deposition processes. In some embodiments, atomic layer deposition (ALD) processes are used to deposit a noble metal containing thin film on a high-k material, metal, metal nitride or other conductive metal compound while avoiding deposition on a lower k insulator such as silicon oxide. The ability to deposit on a first surface, such as a high-k material, while avoiding deposition on a second surface, such as a silicon oxide or silicon nitride surface, may be utilized, for example, in the formation of a gate electrode.

公开(公告)号：US09112003B2

公开(公告)日：2015-08-18

申请号：US13708863

申请日：2012-12-07

Applicant: ASM International. N.V.

Inventor： Suvi P. Haukka ,  Antti Niskanen ,  Marko Tuominen

IPC: H01L21/768 ,  H01L21/31 ,  H01L21/314 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/285 ,  C23C16/04 ,  C23C16/14

CPC classification number: H01L21/7685 ,  C23C16/04 ,  C23C16/14 ,  C23C16/45536 ,  C23C16/45553 ,  H01L21/02068 ,  H01L21/28518 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/3105 ,  H01L21/76826 ,  H01L21/76849 ,  H01L21/76864 ,  H01L21/76867 ,  H01L21/76883 ,  H01L21/76886 ,  H01L21/76889 ,  H01L23/53238

Abstract: Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on copper instead of insulating or dielectric materials. In some embodiments, a first precursor forms a layer on the first surface and is subsequently reacted or converted to form a metallic layer. The deposition temperature may be selected such that a selectivity of above about 50% or even about 90% is achieved.

Abstract translation: 金属层可以相对于基板的第二表面选择性沉积在衬底的一个表面上。 在一些实施例中，金属层选择性地沉积在铜上而不是绝缘或介电材料。 在一些实施方案中，第一前体在第一表面上形成一层，随后反应或转化以形成金属层。 可以选择沉积温度使得达到高于约50％或甚至约90％的选择性。

公开(公告)号：US20150187600A1

公开(公告)日：2015-07-02

申请号：US14613183

申请日：2015-02-03

Applicant: ASM International N.V.

Inventor： Suvi P. Haukka ,  Antti Niskanen ,  Marko Tuominen

IPC: H01L21/3205 ,  H01L21/768 ,  H01L21/02

CPC classification number: H01L21/7685 ,  C23C16/0227 ,  C23C16/14 ,  C23C16/45525 ,  H01L21/02068 ,  H01L21/02697 ,  H01L21/28562 ,  H01L21/32051 ,  H01L21/32053 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76838 ,  H01L21/76849 ,  H01L21/76883

Abstract: Metallic layers can be selectively deposited on surfaces of a substrate relative to a second surface of the substrate. In preferred embodiments, the metallic layers are selectively deposited on copper instead of insulating or dielectric materials. In preferred embodiments, a first precursor forms a layer or adsorbed species on the first surface and is subsequently reacted or converted to form a metallic layer. Preferably the deposition temperature is selected such that a selectivity of above about 90% is achieved.

Abstract translation: 金属层可以相对于基板的第二表面选择性地沉积在基板的表面上。 在优选实施例中，金属层选择性地沉积在铜上，而不是绝缘或介电材料。 在优选的实施方案中，第一前体在第一表面上形成层或吸附的物质，随后反应或转化以形成金属层。 优选选择沉积温度使得达到高于约90％的选择性。