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    Flows of optimization for lithographic processes
    13.
    发明授权
    Flows of optimization for lithographic processes 有权

    公开(公告)号：US10025201B2

    公开(公告)日：2018-07-17

    申请号：US15303199

    申请日：2015-02-13

    Applicant: ASML Netherlands B.V.

    Inventor： Duan-Fu Stephen Hsu ,  Rafael C. Howell ,  Xiaofeng Liu

    IPC: G03F7/20 ,  G03F1/36 ,  G03F1/70

    Abstract: A method to improve a lithographic process for imaging a portion of a design layout onto a substrate using a lithographic projection apparatus having an illumination system and projection optics, the method including: obtaining an illumination source shape and a mask defocus value; optimizing a dose of the lithographic process; and optimizing the portion of the design layout for each of a plurality of slit positions of the illumination source.

    OPTIMIZATION FLOWS OF SOURCE, MASK AND PROJECTION OPTICS
    14.
    发明申请
    OPTIMIZATION FLOWS OF SOURCE, MASK AND PROJECTION OPTICS 审中-公开

    公开(公告)号：US20170176864A1

    公开(公告)日：2017-06-22

    申请号：US15451328

    申请日：2017-03-06

    Applicant: ASML Netherlands B.V.

    Inventor： Duan-Fu HSU ,  Luoqi Chen ,  Hanying Feng ,  Rafael C. Howell ,  Xinjian Zhou ,  Yi-Fan Chen

    IPC: G03F7/20

    CPC classification number: G03F7/70066 ,  G03F7/705

    Abstract: Embodiments of the present invention provide methods for optimizing a lithographic projection apparatus including optimizing projection optics therein. The current embodiments include several flows including optimizing a source, a mask, and the projection optics and various sequential and iterative optimization steps combining any of the projection optics, mask and source. The projection optics is sometimes broadly referred to as “lens”, and therefore the optimization process may be termed source mask lens optimization (SMLO). SMLO may be desirable over existing source mask optimization process (SMO) or other optimization processes that do not include projection optics optimization, partially because including the projection optics in the optimization may lead to a larger process window by introducing a plurality of adjustable characteristics of the projection optics. The projection optics may be used to shape wavefront in the lithographic projection apparatus, enabling aberration control of the overall imaging process.

    Aberration impact systems, models, and manufacturing processes
    15.
    发明授权
    Aberration impact systems, models, and manufacturing processes 有权

    公开(公告)号：US12210291B2

    公开(公告)日：2025-01-28

    申请号：US17927866

    申请日：2021-05-14

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Xingyue Peng ,  Zhan Shi ,  Duan-Fu Stephen Hsu ,  Rafael C. Howell ,  Gerui Liu

    IPC: G03F7/00

    Abstract: Scanner aberration impact modeling in a semiconductor manufacturing process, which may facilitate co-optimization of multiple scanners. Scanner aberration impact modeling may include executing a calibrated model and controlling a scanner based on output from the model. The model is configured to receive patterning system aberration data. The model is calibrated with patterning system aberration calibration data and corresponding patterning process impact calibration data. New pattering process impact data may be determined, based on the model, for the received patterning system aberration data. The model includes a hyperdimensional function configured to correlate the received patterning system aberration data with the new pattering process impact data. The hyperdimensional function is configured to correlate the received patterning system aberration data with the new patterning process impact data in an approximation form, in lieu of a full simulation, without involving calculation of an aerial image or a representation thereof.

    METHOD OF DETERMINING CHARACTERISTIC OF PATTERNING PROCESS BASED ON DEFECT FOR REDUCING HOTSPOT
    16.
    发明申请
    METHOD OF DETERMINING CHARACTERISTIC OF PATTERNING PROCESS BASED ON DEFECT FOR REDUCING HOTSPOT 有权

    公开(公告)号：US20240419086A1

    公开(公告)日：2024-12-19

    申请号：US18819516

    申请日：2024-08-29

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Xingyue PENG ,  Duan-Fu Stephen Hsu ,  Rafael C. Howell ,  Qinglin Li

    IPC: G03F7/00

    Abstract: Methods for optimizing an aspect of a patterning process based on defects. For example, a method of source and mask optimization of a patterning process includes obtaining a location on a substrate having a threshold probability of having a defect; defining an defect ambit around the location to include a portion of a pattern on the substrate and one or more evaluation points associated with the portion of the pattern; determining a value of a first cost function based on a defect metric associated with the defect; determining a first guide function for the first cost function, wherein the first guide function is associated with a performance metric of the patterning process at the one or more evaluation locations within the defect ambit; and adjusting a source and/or a mask characteristic based on the value of the first cost function, and the first guide function.

    Binarization method and freeform mask optimization flow
    18.
    发明授权
    Binarization method and freeform mask optimization flow 有权

    公开(公告)号：US10990003B2

    公开(公告)日：2021-04-27

    申请号：US16967789

    申请日：2019-02-15

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Duan-Fu Stephen Hsu ,  Jingjing Liu ,  Rafael C. Howell ,  Xingyue Peng

    IPC: G03F1/70 ,  G06F30/398 ,  G03F1/36

    Abstract: A method to determine a mask pattern for a patterning device. The method includes obtaining a target pattern to be printed on a substrate, an initial continuous tone image corresponding to the target pattern, a binarization function (e.g., a sigmoid, an arctan, a step function, etc.) configured to transform the initial continuous tone image, and a process model configured to predict a pattern on the substrate from an output of the binarization function; and generating a binarized image having a mask pattern corresponding to the initial continuous tone image by iteratively updating the initial continuous tone image based on a cost function such that the cost function is reduced. The cost function (e.g., EPE) determines a difference between a predicted pattern determined by the process model and the target pattern.

    Discrete source mask optimization
    19.
    发明授权
    Discrete source mask optimization 有权

    公开(公告)号：US10558124B2

    公开(公告)日：2020-02-11

    申请号：US16257423

    申请日：2019-01-25

    Applicant: ASML Netherlands B.V.

    Inventor： Xiaofeng Liu ,  Rafael C. Howell

    IPC: G03F7/20

    Abstract: A method for improving a lithographic process for imaging a portion of a design layout onto a substrate using a lithographic projection apparatus, the method including: calculating a discrete pupil profile based on a desired pupil profile; selecting a discrete change to the discrete pupil profile; and applying the selected discrete change to the discrete pupil profile. The methods according to various embodiments disclosed herein may reduce the computational cost of discrete optimization from O(an) to O(n) wherein a is constant and n is the number of knobs that can generate discrete change in the pupil profile.

    Method of determining characteristic of patterning process based on defect for reducing hotspot
    20.
    发明授权
    Method of determining characteristic of patterning process based on defect for reducing hotspot 有权

    公开(公告)号：US12092963B2

    公开(公告)日：2024-09-17

    申请号：US17605358

    申请日：2020-03-26

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Xingyue Peng ,  Duan-Fu Stephen Hsu ,  Rafael C. Howell ,  Qinglin Li

    IPC: G06F30/30 ,  G03F7/00

    CPC classification number: G03F7/70616 ,  G03F7/705

    Abstract: Methods for optimizing an aspect of a patterning process based on defects. For example, a method of source and mask optimization of a patterning process includes obtaining a location on a substrate having a threshold probability of having a defect; defining an defect ambit around the location to include a portion of a pattern on the substrate and one or more evaluation points associated with the portion of the pattern; determining a value of a first cost function based on a defect metric associated with the defect; determining a first guide function for the first cost function, wherein the first guide function is associated with a performance metric of the patterning process at the one or more evaluation locations within the defect ambit; and adjusting a source and/or a mask characteristic based on the value of the first cost function, and the first guide function.

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