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公开(公告)号：US10459346B2
公开(公告)日：2019-10-29
申请号：US16036732
申请日：2018-07-16
摘要： A method to improve a lithographic process for imaging a portion of a design layout onto a substrate using a lithographic projection apparatus having an illumination system and projection optics, the method including: obtaining an illumination source shape and a mask defocus value; optimizing a dose of the lithographic process; and optimizing the portion of the design layout for each of a plurality of slit positions of the illumination source.
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公开(公告)号：US11977334B2
公开(公告)日：2024-05-07
申请号：US18089940
申请日：2022-12-28
发明人： Duan-Fu Stephen Hsu , Christoph Rene Konrad Cebulla Hennerkes , Rafael C. Howell , Zhan Shi , Xiaoyang Jason Li , Frank Staals
IPC分类号： G03F7/00
CPC分类号： G03F7/70266 , G03F7/705 , G03F7/7055
摘要： A method for determining a wavefront parameter of a patterning process. The method includes obtaining a reference performance (e.g., a contour, EPE, CD) of a reference apparatus (e.g., a scanner), a lens model for a patterning apparatus configured to convert a wavefront parameter of a wavefront to actuator movement, and a lens fingerprint of a tuning apparatus (e.g., a to-be-matched scanner). Further, the method involves determining the wavefront parameter (e.g., a wavefront parameter such as tilt, offset, etc.) based on the lens fingerprint of the tuning apparatus, the lens model, and a cost function, wherein the cost function is a difference between the reference performance and a tuning apparatus performance.
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公开(公告)号：US20230161264A1
公开(公告)日：2023-05-25
申请号：US18089940
申请日：2022-12-28
发明人： Duan-Fu Stephen HSU , Christoph Rene Konrad Cebulla Hennerkes , Rafael C. Howell , Zhan Shi , Xiaoyang Jason Li , Frank Staals
IPC分类号： G03F7/20
CPC分类号： G03F7/70266 , G03F7/705 , G03F7/7055
摘要： A method for determining a wavefront parameter of a patterning process. The method includes obtaining a reference performance (e.g., a contour, EPE, CD) of a reference apparatus (e.g., a scanner), a lens model for a patterning apparatus configured to convert a wavefront parameter of a wavefront to actuator movement, and a lens fingerprint of a tuning apparatus (e.g., a to-be-matched scanner). Further, the method involves determining the wavefront parameter (e.g., a wavefront parameter such as tilt, offset, etc.) based on the lens fingerprint of the tuning apparatus, the lens model, and a cost function, wherein the cost function is a difference between the reference performance and a tuning apparatus performance.
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公开(公告)号：US11614690B2
公开(公告)日：2023-03-28
申请号：US16478489
申请日：2018-01-24
发明人： Mu Feng , Mir Farrokh Shayegan Salek , Dianwen Zhu , Leiwu Zheng , Rafael C. Howell , Jen-Shiang Wang
IPC分类号： G05B19/418 , G03F7/20
摘要： Methods of constructing a process model for simulating a characteristic of a product of lithography from patterns produced under different processing conditions. The methods use a deviation between the variation of the simulated characteristic and the variation of the measured characteristic to adjust a parameter of the process model.
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15.发明授权公开(公告)号：US11016395B2
公开(公告)日：2021-05-25
申请号：US16467124
申请日：2017-12-06
发明人： Yu Cao , Yen-Wen Lu , Peng Liu , Rafael C. Howell , Roshni Biswas
摘要： A method including: obtaining a thin-mask transmission function of a patterning device and a M3D model for a lithographic process, wherein the thin-mask transmission function represents a continuous transmission mask and the M3D model at least represents a portion of M3D attributable to multiple edges of structures on the patterning device; determining a M3D mask transmission function of the patterning device by using the thin-mask transmission function and the M3D model; and determining an aerial image produced by the patterning device and the lithographic process, by using the M3D mask transmission function.
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公开(公告)号：US10025201B2
公开(公告)日：2018-07-17
申请号：US15303199
申请日：2015-02-13
摘要： A method to improve a lithographic process for imaging a portion of a design layout onto a substrate using a lithographic projection apparatus having an illumination system and projection optics, the method including: obtaining an illumination source shape and a mask defocus value; optimizing a dose of the lithographic process; and optimizing the portion of the design layout for each of a plurality of slit positions of the illumination source.
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公开(公告)号：US20170176864A1
公开(公告)日：2017-06-22
申请号：US15451328
申请日：2017-03-06
发明人： Duan-Fu HSU , Luoqi Chen , Hanying Feng , Rafael C. Howell , Xinjian Zhou , Yi-Fan Chen
IPC分类号： G03F7/20
CPC分类号： G03F7/70066 , G03F7/705
摘要： Embodiments of the present invention provide methods for optimizing a lithographic projection apparatus including optimizing projection optics therein. The current embodiments include several flows including optimizing a source, a mask, and the projection optics and various sequential and iterative optimization steps combining any of the projection optics, mask and source. The projection optics is sometimes broadly referred to as “lens”, and therefore the optimization process may be termed source mask lens optimization (SMLO). SMLO may be desirable over existing source mask optimization process (SMO) or other optimization processes that do not include projection optics optimization, partially because including the projection optics in the optimization may lead to a larger process window by introducing a plurality of adjustable characteristics of the projection optics. The projection optics may be used to shape wavefront in the lithographic projection apparatus, enabling aberration control of the overall imaging process.
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18.发明授权公开(公告)号：US12092963B2
公开(公告)日：2024-09-17
申请号：US17605358
申请日：2020-03-26
CPC分类号： G03F7/70616 , G03F7/705
摘要： Methods for optimizing an aspect of a patterning process based on defects. For example, a method of source and mask optimization of a patterning process includes obtaining a location on a substrate having a threshold probability of having a defect; defining an defect ambit around the location to include a portion of a pattern on the substrate and one or more evaluation points associated with the portion of the pattern; determining a value of a first cost function based on a defect metric associated with the defect; determining a first guide function for the first cost function, wherein the first guide function is associated with a performance metric of the patterning process at the one or more evaluation locations within the defect ambit; and adjusting a source and/or a mask characteristic based on the value of the first cost function, and the first guide function.
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公开(公告)号：US11972194B2
公开(公告)日：2024-04-30
申请号：US18089848
申请日：2022-12-28
发明人： Roshni Biswas , Rafael C. Howell , Cuiping Zhang , Ningning Jia , Jingjing Liu , Quan Zhang
IPC分类号： G06F30/30 , G03F7/00 , G03F7/20 , G06F30/392 , G06F30/398 , G06F119/18
CPC分类号： G06F30/398 , G03F7/70441 , G03F7/705 , G03F7/70625 , G06F30/392 , G06F2119/18
摘要： A method for determining a patterning device pattern. The method includes obtaining (i) an initial patterning device pattern having at least one feature, and (ii) a desired feature size of the at least one feature, obtaining, based on a patterning process model, the initial patterning device pattern and a target pattern for a substrate, a difference value between a predicted pattern of the substrate image by the initial patterning device and the target pattern for the substrate, determining a penalty value related the manufacturability of the at least one feature, wherein the penalty value varies as a function of the size of the at least one feature, and determining the patterning device pattern based on the initial patterning device pattern and the desired feature size such that a sum of the difference value and the penalty value is reduced.
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公开(公告)号：US11586114B2
公开(公告)日：2023-02-21
申请号：US16973377
申请日：2019-06-21
发明人： Duan-Fu Stephen Hsu , Christoph Rene Konrad Cebulla Hennerkes , Rafael C. Howell , Zhan Shi , Xiaoyang Jason Li , Frank Staals
IPC分类号： G03F7/20
摘要： A method for determining a wavefront parameter of a patterning process. The method includes obtaining a reference performance (e.g., a contour, EPE, CD) of a reference apparatus (e.g., a scanner), a lens model for a patterning apparatus configured to convert a wavefront parameter of a wavefront to actuator movement, and a lens fingerprint of a tuning apparatus (e.g., a to-be-matched scanner). Further, the method involves determining the wavefront parameter (e.g., a wavefront parameter such as tilt, offset, etc.) based on the lens fingerprint of the tuning apparatus, the lens model, and a cost function, wherein the cost function is a difference between the reference performance and a tuning apparatus performance.
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