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公开(公告)号:US20230207729A1
公开(公告)日:2023-06-29
申请号:US18115746
申请日:2023-02-28
Applicant: Advanced Semiconductor Engineering, Inc.
Inventor: Tang-Yuan CHEN , Meng-Wei HSIEH , Cheng-Yuan KUNG
CPC classification number: H01L33/14 , H01L33/0095 , H01L33/26
Abstract: A semiconductor device package includes a carrier, an emitting element and a first package body. The carrier includes a first surface and a second surface opposite to the first surface. The emitting element is disposed on the first surface of the carrier. The first package body is disposed over the first surface of the carrier and spaced apart from the first surface of the carrier.
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公开(公告)号:US20230078564A1
公开(公告)日:2023-03-16
申请号:US17990645
申请日:2022-11-18
Applicant: Advanced Semiconductor Engineering, Inc.
Inventor: Cheng-Yuan KUNG , Hung-Yi LIN , Meng-Wei HSIEH , Yu-Pin TSAI
IPC: H01L23/552 , H01L23/31 , H01L21/50
Abstract: A semiconductor package structure and a method for manufacturing a semiconductor package structure are provided. The semiconductor package structure includes a device package and a shielding layer. The device package includes an electronic device unit and has a first surface, a second surface opposite to the first surface, and a third surface connecting the first surface to the second surface. The shielding layer is disposed on the first surface and the second surface of the device package. A common edge of the second surface and the third surface includes a first portion exposed from the shielding layer by a first length, and a common edge of the first surface and the third surface includes a second portion exposed from the shielding layer by a second length that is different from the first length.
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公开(公告)号:US20230024293A1
公开(公告)日:2023-01-26
申请号:US17383264
申请日:2021-07-22
Applicant: Advanced Semiconductor Engineering, Inc.
Inventor: Cheng-Yuan KUNG , Meng-Wei HSIEH
IPC: H03H9/05 , H03H9/10 , H03H9/54 , H05K3/34 , H01L23/552
Abstract: A semiconductor device and a method of manufacturing a semiconductor device are provided. The semiconductor device includes a carrier, an element, and a first electronic component. The element is disposed on the carrier. The first electronic component is disposed above the element. The element is configured to adjust a first bandwidth of a first signal transmitted from the first electronic component.
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公开(公告)号:US20220181267A1
公开(公告)日:2022-06-09
申请号:US17111347
申请日:2020-12-03
Applicant: Advanced Semiconductor Engineering, Inc.
Inventor: Cheng-Yuan KUNG , Meng-Wei HSIEH
IPC: H01L23/552 , H01L23/538 , H01L21/56 , H01L23/00
Abstract: A semiconductor package structure and a method for manufacturing a semiconductor package structure are provided. The semiconductor package structure includes an electronic component, a conductive contact, and a first shielding layer. The electronic component has a first surface, a lateral surface angled with the first surface, and a second surface opposite to the first surface. The conductive contact is connected to the first surface of the electronic component. The first shielding layer is disposed on the lateral surface of the electronic component and a portion of the first surface of the electronic component. The first shielding layer contacts the conductive contact.
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公开(公告)号:US20220157746A1
公开(公告)日:2022-05-19
申请号:US16953261
申请日:2020-11-19
Applicant: Advanced Semiconductor Engineering, Inc.
Inventor: Cheng-Yu HO , Meng-Wei HSIEH
IPC: H01L23/66 , H01L23/31 , H01L23/538 , H01L21/683 , H01L21/48 , H01L21/56 , H01Q5/307 , H01Q1/48
Abstract: The present disclosure provides an antenna module. The antenna module includes a first layer, a second layer, a first antenna, and a second antenna. The first layer has a first dielectric constant. The second layer is adjacent to the first layer. The second layer has a second Dk lower than the first Dk. The first antenna is disposed on the first layer and is configured for operating at a first frequency. The second antenna is disposed on the second layer and is configured for operating at a second frequency higher than the first frequency.
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公开(公告)号:US20210249368A1
公开(公告)日:2021-08-12
申请号:US16789243
申请日:2020-02-12
Applicant: Advanced Semiconductor Engineering, Inc.
Inventor: Meng-Wei HSIEH , Kuo-Chang KANG
IPC: H01L23/66 , H01L23/00 , H01L23/373 , H01L21/768
Abstract: A semiconductor device package includes a first circuit layer, a first emitting device and a second emitting device. The first circuit layer has a first surface and a second surface opposite to the first surface. The first emitting device is disposed on the second surface of the first circuit layer. The first emitting device has a first surface facing the first circuit layer and a second surface opposite to the first surface. The first emitting device has a first conductive pattern disposed on the first surface of the first emitting device. The second emitting device is disposed on the second surface of the first emitting device. The second emitting device has a first surface facing the second surface of the first emitting device and a second surface opposite to the first surface. The second emitting device has a second conductive pattern disposed on the second surface of the emitting device. A coefficient of thermal expansion (CTE) of the first emitting device is greater than a CTE of the second emitting device.
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公开(公告)号:US20240215151A1
公开(公告)日:2024-06-27
申请号:US18086579
申请日:2022-12-21
Applicant: Advanced Semiconductor Engineering, Inc.
Inventor: Hsu-Chiang SHIH , Cheng-Yuan KUNG , Hung-Yi LIN , Meng-Wei HSIEH , Chien-Mei HUANG , I-Ting LIN , Sheng-Wen YANG
CPC classification number: H05K1/0271 , H05K1/0298 , H05K1/115 , H05K2201/09827
Abstract: The present disclosure provides an electronic device and a method of manufacturing the same. The electronic device includes a first redistribution structure and a first encapsulant. The first encapsulant supports the first redistribution structure and is configured to function as a first reinforcement to provide a second redistribution structure. The redistribution structure has a plurality of conductive layers disposed over the first redistribution structure.
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公开(公告)号:US20240072413A1
公开(公告)日:2024-02-29
申请号:US17894946
申请日:2022-08-24
Applicant: Advanced Semiconductor Engineering, Inc.
Inventor: Cheng-Yu HO , Meng-Wei HSIEH , Chih-Pin HUNG
CPC classification number: H01Q1/2283 , H01Q1/523 , H01Q21/065 , H01Q25/00
Abstract: An electronic device is provided. The electronic device includes an antenna array including a plurality of antenna patterns collectively configured to provide a scan-angle coverage. Each of the antenna patterns includes a curved surface.
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公开(公告)号:US20230268638A1
公开(公告)日:2023-08-24
申请号:US17676088
申请日:2022-02-18
Applicant: Advanced Semiconductor Engineering, Inc.
Inventor: Cheng-Yu HO , Meng-Wei HSIEH
CPC classification number: H01Q1/2283 , H01L23/66 , H01L2223/6677
Abstract: The present disclosure provides a semiconductor device package. The semiconductor device package includes a first antenna pattern disposed at a first elevation and a second antenna pattern disposed at a second elevation different from the first elevation. The first antenna pattern and the second antenna pattern define an air cavity. The semiconductor device package also includes a circuit layer. The air cavity is between the first antenna pattern, the second antenna pattern, and the circuit layer.
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公开(公告)号:US20230215822A1
公开(公告)日:2023-07-06
申请号:US17566569
申请日:2021-12-30
Applicant: Advanced Semiconductor Engineering, Inc.
Inventor: Meng-Wei HSIEH , Hung-Yi LIN , Hsu-Chiang SHIH , Cheng-Yuan KUNG
IPC: H01L23/66 , H01L25/18 , H01L23/498 , H01L23/367 , H01L23/31 , H03F3/04
CPC classification number: H01L23/66 , H01L25/18 , H01L23/49811 , H01L23/367 , H01L23/3107 , H03F3/04 , H01L2223/6655
Abstract: An electronic package is provided. The electronic package includes an amplifier component, a control component, and a first circuit layer. The control component is disposed above the amplifier component. The first circuit layer is disposed between the amplifier component and the control component. The control component is configured to transmit a first signal to the amplifier component and to output a second signal amplified by the amplifier component.
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