公开(公告)号：US11791227B2

公开(公告)日：2023-10-17

申请号：US17317770

申请日：2021-05-11

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Kuoching Cheng ,  Yuan-Feng Chiang ,  Ya Fang Chan ,  Wen-Long Lu ,  Shih-Yu Wang

IPC: H01L23/31 ,  H01L25/065 ,  H01L21/56 ,  H01L23/538 ,  H01L23/16

CPC classification number: H01L23/31 ,  H01L21/56 ,  H01L23/16 ,  H01L23/5386 ,  H01L25/0655

Abstract: An electronic device package and a method for manufacturing an electronic device package are provided. The electronic device package includes electronic device structure which includes a first electronic device and a first encapsulant, a second electronic device, and a second encapsulant. The first encapsulant encapsulates the first electronic device. The second electronic device is adjacent to the electronic device structure. The second encapsulant encapsulates the electronic device structure and the second electronic device. A first extension line along a lateral surface of the first electronic device and a second extension line along a lateral surface of the first encapsulant define a first angle, the second extension line along the lateral surface of the first encapsulant and a third extension line along a lateral surface of the second electronic device define a second angle, and the first angle is different from the second angle.

公开(公告)号：US11037853B1

公开(公告)日：2021-06-15

申请号：US16717933

申请日：2019-12-17

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Ya Fang Chan ,  Yuan-Feng Chiang ,  Po-Wei Lu

IPC: H01L23/04 ,  H01L23/367 ,  H01L23/433 ,  H01L25/065 ,  H01L21/768 ,  H01L25/00 ,  H01L21/48

Abstract: A semiconductor heat dissipation structure includes a first semiconductor device including a first active surface and a first back surface opposite to the first active surface, a second semiconductor device including a second active surface and a second back surface opposite to the second active surface, a first heat conductive layer embedded in the first back surface of the first semiconductor device, a second heat conductive layer embedded in the second back surface of the second semiconductor device, and a third heat conductive layer disposed adjoining the first heat conductive layer and extending to the first active surface of the first semiconductor device. The first back surface of the first semiconductor device and the second back surface of the second semiconductor device are in contact with each other. At least a portion of the first heat conductive layer are in contact with the second heat conductive layer.

公开(公告)号：US10325854B2

公开(公告)日：2019-06-18

申请号：US15652821

申请日：2017-07-18

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Kun-Ming Chen ,  Yuan-Feng Chiang

IPC: H01L23/538 ,  H01L21/48 ,  H01L25/10 ,  H01L25/00

Abstract: An interposer comprises a first conductive wire having a first terminal and a second terminal, a first oxide layer, and an encapsulant. The first oxide layer covers the first conductive wire and exposes the first terminal and the second terminal of the first conductive wire. The encapsulant covers the first oxide layer and exposes the first terminal and the second terminal of the first conductive wire.

公开(公告)号：US20180108634A1

公开(公告)日：2018-04-19

申请号：US15294594

申请日：2016-10-14

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Wen-Long LU ,  Yuan-Feng Chiang ,  Chi-Chang Lee ,  Chung-Hsi Wu

IPC: H01L23/00 ,  H01L23/498

CPC classification number: H01L24/17 ,  H01L23/49811 ,  H01L23/49827 ,  H01L24/33 ,  H01L2224/1705 ,  H01L2224/175 ,  H01L2224/33104 ,  H01L2224/335

Abstract: A semiconductor package includes a first semiconductor device and a second semiconductor device. The first semiconductor device includes a first main body, at least one first columnar portion and at least one first conductive layer. The first columnar portion protrudes from a bottom surface of the first main body. The first conductive layer is disposed on a side surface of the first columnar portion. The second semiconductor device includes a second main body, at least one second columnar portion and at least one second conductive layer. The second columnar portion protrudes from a top surface of the second main body. The second conductive layer is disposed on a side surface of the second columnar portion. The first conductive layer is electrically coupled to the second conductive layer.

公开(公告)号：US09929078B2

公开(公告)日：2018-03-27

申请号：US14995572

申请日：2016-01-14

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Wen-Long Lu ,  Chi-Chang Lee ,  Wei-Min Hsiao ,  Yuan-Feng Chiang

IPC: H01L23/31 ,  H01L23/495 ,  H01L21/48 ,  H01L21/56 ,  H01L23/29

CPC classification number: H01L23/49572 ,  H01L21/4825 ,  H01L21/561 ,  H01L21/565 ,  H01L21/568 ,  H01L23/145 ,  H01L23/147 ,  H01L23/293 ,  H01L23/3114 ,  H01L23/3121 ,  H01L23/49575 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/4985 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/97 ,  H01L25/0655 ,  H01L2224/0401 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81005 ,  H01L2224/83005 ,  H01L2224/97 ,  H01L2924/15313 ,  H01L2924/1815 ,  H01L2924/19105 ,  H01L2224/83 ,  H01L2224/81

Abstract: A semiconductor package structure includes a conductive structure, at least two semiconductor elements and an encapsulant. The conductive structure has a first surface and a second surface opposite the first surface. The semiconductor elements are disposed on and electrically connected to the first surface of the conductive structure. The encapsulant covers the semiconductor elements and the first surface of the conductive structure. The encapsulant has a width ‘L’ and defines at least one notch portion. A minimum distance ‘d’ is between a bottom surface of the notch portion and the second surface of the conductive structure. The encapsulant has a Young's modulus ‘E’ and a rupture strength ‘Sr’, and L/(K×d)>E/Sr, wherein ‘K’ is a stress concentration factor with a value of greater than 1.2.