公开(公告)号：US5938883A

公开(公告)日：1999-08-17

申请号：US788636

申请日：1997-01-27

申请人： Nobuo Ishii ,  Jiro Hata

发明人： Nobuo Ishii ,  Jiro Hata

IPC分类号： H01J37/32 ,  H05H1/18 ,  H05H1/46 ,  H05H1/00

CPC分类号： H05H1/46 ,  H01J37/321

摘要： Disclosed is a plasma processing apparatus, comprising a processing chamber in which an object to be processed is arranged, a processing gas introducing pipe for introducing a processing gas into the processing chamber, an antenna arranged in that region on the outer surface of the processing chamber which is positioned to correspond to the object to be processed, an insulator being interposed between the antenna and the processing chamber, and a high frequency power being supplied to the antenna so as to form an induction electric field near the object to be processed, and a paramagnetic member arranged to overlap at least partially with the antenna.

公开(公告)号：US06265031B1

公开(公告)日：2001-07-24

申请号：US09252002

申请日：1999-02-18

申请人： Nobuo Ishii ,  Jiro Hata

发明人： Nobuo Ishii ,  Jiro Hata

IPC分类号： H05H116

CPC分类号： H05H1/46 ,  H01J37/321

摘要： A method for achieving a highly uniform plasma density on a substrate by shaping an induced electric field including the steps of positioning the substrate in a processing chamber. supplying a high frequency power to a spiral antenna generating an induced electric field in the processing chamber, generating a plasma in the processing chamber, and shaping the electric field with respect to the substrate to achieve a uniform distribution of plasma on the substrate being processed.

摘要翻译： 一种用于通过使感应电场成形来实现衬底上的高度均匀等离子体密度的方法，包括将衬底定位在处理室中的步骤。 向在处理室中产生感应电场的螺旋天线提供高频电力，在处理室中产生等离子体，并且相对于衬底对电场进行成形，以使待加工的衬底上的等离子体均匀分布。

公开(公告)号：US6136140A

公开(公告)日：2000-10-24

申请号：US252031

申请日：1999-02-18

申请人： Nobuo Ishii ,  Jiro Hata

发明人： Nobuo Ishii ,  Jiro Hata

IPC分类号： H01J37/32 ,  H05H1/46 ,  H05H1/00

CPC分类号： H01J37/321 ,  H05H1/46

摘要： Disclosed is a plasma processing apparatus, comprising a processing chamber in which an object to be processed is arranged, a processing gas introducing pipe for introducing a processing gas into the processing chamber, an antenna arranged in that region on the outer surface of the processing chamber which is positioned to correspond to the object to be processed, an insulator being interposed between the antenna and the processing chamber, and a high frequency power being supplied to the antenna so as to form an induction electric field near the object to be processed, and a paramagnetic member arranged to overlap at least partially with the antenna.

公开(公告)号：US5372836A

公开(公告)日：1994-12-13

申请号：US38621

申请日：1993-03-26

申请人： Issei Imahashi ,  Kiichi Hama ,  Jiro Hata

发明人： Issei Imahashi ,  Kiichi Hama ,  Jiro Hata

IPC分类号： C23C16/24 ,  C23C16/56 ,  G02F1/1362 ,  H01L21/20 ,  B05D3/06 ,  H01L21/461 ,  H01L21/302

CPC分类号： C23C16/24 ,  C23C16/56 ,  H01L21/2026 ,  G02F1/13454

摘要： In a method of forming a polycrystalline silicon film in a process of manufacturing an LCD, a hydrogenated amorphous silicon film is formed on a glass substrate by plasma CVD throughout areas serving as the pixel portion and driver unit of the LCD. A laser beam is radiated on a selected region of the film on the area serving as the driver unit. The energy of the laser beam is set such that hydrogen in the film is discharged without crystallizing the film and damaging the film. The energy of the laser beam is gradually increased to gradually discharge hydrogen from the film. The energy of the laser beam is finally set such that the film is transformed into a polycrystalline silicon film. The amorphous silicon film can be poly-crystallized without damaging the film by the discharge of hydrogen.

摘要翻译： 在制造LCD的过程中形成多晶硅膜的方法中，在用作LCD的像素部分和驱动单元的区域中，通过等离子体CVD在玻璃基板上形成氢化非晶硅膜。 在作为驱动器单元的区域上的膜的选定区域上照射激光束。 激光束的能量被设定为使得膜中的氢气不会使膜结晶而被排出并损坏膜。 激光束的能量逐渐增加，逐渐从膜中排出氢。 最终将激光束的能量设定为使得膜转变为多晶硅膜。 非晶硅膜可以多结晶而不会通过氢气的排出而损坏膜。

公开(公告)号：US5795429A

公开(公告)日：1998-08-18

申请号：US774685

申请日：1996-12-26

申请人： Nobuo Ishii ,  Jiro Hata

发明人： Nobuo Ishii ,  Jiro Hata

IPC分类号： H01J37/32 ,  H05H1/18 ,  H05H1/46 ,  H05H1/00

CPC分类号： H05H1/46 ,  H01J37/321

摘要： Disclosed is a plasma processing apparatus, comprising a processing chamber in which an object to be processed is arranged, a processing gas introducing pipe for introducing a processing gas into the processing chamber, an antenna arranged in that region on the outer surface of the processing chamber which is positioned to correspond to the object to be processed, an insulator being interposed between the antenna and the processing chamber, and a high frequency power being supplied to the antenna so as to form an induction electric field near the object to be processed, and a paramagnetic member arranged to overlap at least partially with the antenna.

公开(公告)号：US5571366A

公开(公告)日：1996-11-05

申请号：US327798

申请日：1994-10-20

申请人： Nobuo Ishii ,  Jiro Hata ,  Chishio Koshimizu ,  Yoshifumi Tahara ,  Hiroshi Nishikawa ,  Isei Imahashi

发明人： Nobuo Ishii ,  Jiro Hata ,  Chishio Koshimizu ,  Yoshifumi Tahara ,  Hiroshi Nishikawa ,  Isei Imahashi

IPC分类号： H01J37/32 ,  H05H1/00

CPC分类号： H01J37/32082 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32174 ,  H01J37/32935 ,  H01J37/32963 ,  H01J37/3299 ,  H01J2237/334 ,  H01J2237/3343

摘要： A plasma processing apparatus includes a chamber having a gas inlet port and a gas discharge port, a rest table, arranged in the chamber, for supporting a wafer which has a surface to be processed, a radio frequency antenna for supplying a radio frequency energy into the chamber, and generating an induced plasma in the chamber, and a radio frequency voltage source for applying a radio frequency voltage to the radio frequency antenna. A pressure and/or light variation in the chamber is measured during generation of the plasma, by a measurement system, and the radio frequency voltage source is controlled based on a signal from the measurement system, so that voltage to be applied to the antenna is controlled according to the pressure and/or light in the chamber.

摘要翻译： 一种等离子体处理装置，包括具有气体入口和气体排出口的室，设置在室内的用于支撑具有待处理表面的晶片的静止台，用于将射频能量供给的射频天线 并且在腔室中产生感应等离子体，以及用于向射频天线施加射频电压的射频电压源。 通过测量系统在等离子体的产生期间测量室中的压力和/或光的变化，并且基于来自测量系统的信号来控制射频电压源，使得施加到天线的电压为 根据腔室内的压力和/或光线进行控制。

公开(公告)号：US5525159A

公开(公告)日：1996-06-11

申请号：US357423

申请日：1994-12-16

申请人： Kiichi Hama ,  Jiro Hata ,  Toshiaki Hongoh

发明人： Kiichi Hama ,  Jiro Hata ,  Toshiaki Hongoh

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/50 ,  C23C16/505 ,  C23C16/509 ,  C23C16/00

CPC分类号： C23C16/45565 ,  C23C16/4404 ,  C23C16/455 ,  C23C16/45563 ,  C23C16/4586 ,  C23C16/466 ,  C23C16/50 ,  C23C16/505 ,  C23C16/5096 ,  H01J37/3211 ,  H01J37/3244 ,  H01J37/32449

摘要： A plasma CVD apparatus for forming a silicon film on an LCD substrate includes a container which is divided into process and upper chambers by a quartz partition plate. A work table on which the substrate is mounted is arranged in the process chamber and a lower electrode to which a high frequency potential is applied is arranged in the work table. First lower and second upper supply heads are arranged between the partition plate and the work table in the process chamber. SiH.sub.4 and H.sub.2 gas and He gases are supplied through the first and second supply heads. He gas is transformed into plasma while SiH.sub.4 and H.sub.2 gas is excited and decomposed by the plasma thus formed. Two coils are arranged in the upper chamber and high frequency voltages are applied to the coils to generate electromagnetic field to induce the transforming of He gas into plasma. High frequency voltages applied to the coils are the same in phase and directions of current flowing through adjacent portions of the coils are the same.

摘要翻译： 用于在LCD基板上形成硅膜的等离子体CVD装置包括通过石英隔板将其分为工艺和上室的容器。 安装有基板的工作台布置在处理室中，并且施加高频电位的下电极布置在工作台中。 第一下供应头和第二上供应头布置在处理室中的分隔板和工作台之间。 SiH4和H2气体和He气体通过第一和第二供应头供应。 He气体转化为等离子体，而SiH4和H2气体被等离子体激发并分解。 两个线圈布置在上部腔室中，并且高频电压施加到线圈以产生电磁场以诱导He气体转化为等离子体。 施加到线圈的高频电压的相位相同，并且流过线圈相邻部分的电流方向相同。

公开(公告)号：US5413958A

公开(公告)日：1995-05-09

申请号：US153376

申请日：1993-11-16

申请人： Issei Imahashi ,  Kiichi Hama ,  Jiro Hata

发明人： Issei Imahashi ,  Kiichi Hama ,  Jiro Hata

IPC分类号： C23C16/24 ,  G02F1/1362 ,  H01L21/20 ,  H01L21/26

CPC分类号： H01L21/02422 ,  C23C16/24 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02686 ,  G02F1/13454 ,  Y10S148/006 ,  Y10S148/09 ,  Y10S148/15

摘要： An amorphous silicon film is formed on a glass substrate by a CVD method, and then the island regions of the amorphous silicon film is changed to a plurality of polycrystalline silicon regions which are arranged in a line and apart with each other in a predetermined distanced by intermittently irradiating laser pulses each having the same dimensions as those of the island region onto the amorphous silicon film, using a laser beam irradiating section. Switching elements including the island regions as semiconductor regions are formed by etching and film-forming process to constitute a driving circuit section. The section is divided to gate driving circuit sections and source driving circuit sections for driving thin film transistors formed in a pixel region.

摘要翻译： 通过CVD法在玻璃基板上形成非晶硅膜，然后将非晶硅膜的岛状区域变化为多个多晶硅区域，这些多晶硅区域以规定的间隔设置成一条线并相互隔开 使用激光束照射部分间歇地将具有与岛状区域相同的尺寸的激光脉冲照射到非晶硅膜上。 通过蚀刻和成膜处理形成包括岛状区域作为半导体区域的开关元件，构成驱动电路部。 该部分被分成用于驱动形成在像素区域中的薄膜晶体管的栅极驱动电路部分和源极驱动电路部分。