摘要:
In an embodiment, a method for transferring data in a memory device is provided. The method may include transferring data from a first memory cell arrangement including a plurality of memory cells to a second memory cell arrangement including a plurality of memory cells via a connecting circuit arrangement coupled to the plurality of memory cell arrangements and providing a plurality of controllable connections via a plurality of connecting circuit terminals, the memory cell arrangements being connected with at least one connecting circuit terminal of the plurality of connecting circuit terminals, wherein the connecting circuit is configured to provide arbitrarily controllable signal flow connections between the plurality of connecting circuit terminals. The data are transferred via a logic connection using the controllable connections. Simultaneously, a further logic connection may be provided to a memory cell arrangement of the memory cell arrangements using the controllable connections.
摘要:
Disclosed embodiments relate to integrated circuits, a method to operate an integrated circuit, and a method to determine an electrical erase sequence. More particularly, the application relates to devices having at least two memory cells and methods relating to its operation.
摘要:
Embodiments of the invention relate generally to a method for writing at least one memory cell of an integrated circuit; a method for writing at least two memory cells of an integrated circuit; and to integrated circuits. In an embodiment of the invention, a method for writing at least one memory cell of an integrated circuit is provided. The method includes determining a writing state of at least one reference memory cell, depending on the writing state of the at least one reference memory cell, writing the at least one memory cell, and writing the at least one reference memory cell to a given writing state.
摘要:
A method of storing data in a memory is provided, including testing a plurality of memory cells of a plurality of memory cell sectors. Each memory cell sector includes a plurality of memory cells. Each memory cell sector is classified into at least one quality class of a plurality of quality classes depending on the results of the testing of the memory cells of the respective memory cell sector. Data is stored in the memory cells of the classified memory cell sectors depending on the quality class of the respective memory cell sector.
摘要:
Embodiments of the present invention relate generally to integrated circuits, methods for manufacturing an integrated circuit, memory modules, and computing systems.
摘要:
In an embodiment of the invention, a method of operating an integrated circuit for reading the logical state of a selected one of a plurality of memory cells included within a memory cell string in the integrated circuit is provided.
摘要:
Embodiments of the present invention relate generally to integrated circuits and methods for manufacturing an integrated circuit. In an embodiment of the invention, an integrated circuit having a memory cell is provided. The memory cell may include a trench in a carrier, a charge trapping layer structure in the trench, the charge trapping layer structure comprising at least two separate charge trapping regions, electrically conductive material at least partially filled in the trench, and source/drain regions next to the trench.
摘要:
The automatic exposure control devices of contemporary X-ray generators have a constant lead time which accurately takes into account the actual ratios or delays only for a given setting of current and voltage. Particularly in the case of high voltages and small currents, the lead times are too short, thus giving rise to overexposures. The invention provides an automatic exposure control device in which the lead time is calculated from the exposure data by an arithmetic unit. The lead time is adjusted on a correspondingly constructed adjustable lead time network. An arithmetic unit of this kind is not required for the programmed exposure technique. The correct lead times can then be programmed and stored together with the other exposure parameters.
摘要:
In an embodiment, an integrated circuit having a memory cell arrangement is provided. The memory cell arrangement may include a memory cell block having a plurality of memory cells, a storage portion configured to store information about a quality characteristic of the memory cells of the memory cell block, and a controller configured to control a read operation, and to change the information about the quality characteristic depending on a quality of a read operation.
摘要:
A memory system having a plurality of memory cells for storing payload data and redundancy data. The memory system having a read-out circuit configured to read-out a status of the plurality of memory cells, the read-out status having payload data, redundancy data and associated reliability information. Moreover, the memory system has a data processor configured to derive the payload data from the read-out status using the reliability information.