公开(公告)号：US07462243B2

公开(公告)日：2008-12-09

申请号：US11233077

申请日：2005-09-23

Applicant: Arthur H Laflamme, Jr. ,  Jay Wallace ,  Eric Strang

Inventor： Arthur H Laflamme, Jr. ,  Jay Wallace ,  Eric Strang

IPC: H01L21/00 ,  C23C16/00 ,  C23C14/00

CPC classification number: H01L21/67069 ,  C23C16/45565

Abstract: A chemical processing system includes a processing chamber containing a chemical processing region and a gas injection system. The gas injection system includes at least one first gas injection orifice and at least one second gas injection orifice in communication with the chemical processing region to expose a substrate to mixed first and second process gases. Other embodiments of the chemical processing system can include a sensor to sense a mixing rate of the process gases or a shroud defining a portion of the at least one first gas injection orifice to control mixing of the process gases. A method of mixing process gas in a chemical processing region of a chemical processing system is provided in which a first process gas and a second process gas are injected into the chemical processing region and mixed. A mixture rate is sensed and used to control the mixing.

Abstract translation: 化学处理系统包括含有化学处理区域和气体注入系统的处理室。 气体注入系统包括与化学处理区域连通的至少一个第一气体注入孔口和至少一个第二气体注入孔，以将衬底暴露于混合的第一和第二工艺气体。 化学处理系统的其它实施例可以包括感测处理气体的混合速率的传感器或限定至少一个第一气体喷射孔口的一部分的护罩以控制处理气体的混合。 提供了在化学处理系统的化学处理区域中混合处理气体的方法，其中将第一处理气体和第二处理气体注入化学处理区域并混合。 检测混合物速率并用于控制混合。

公开(公告)号：US20080092818A1

公开(公告)日：2008-04-24

申请号：US11961355

申请日：2007-12-20

Applicant: Steven Fink ,  Eric Strang

Inventor： Steven Fink ,  Eric Strang

IPC: C23C16/46 ,  C23C16/00

CPC classification number: H01L21/67103 ,  Y10T279/23

Abstract: A thermally zoned substrate holder including a substantially cylindrical base having top and bottom surfaces configured to support a substrate. A plurality of temperature control elements are disposed within the base. An insulator thermally separates the temperature control elements. The insulator is made from an insulting material having a lower coefficient of thermal conductivity than the base (e.g., a gas- or vacuum-filled chamber).

Abstract translation: 一种热分区衬底保持器，其包括基本上圆柱形的基部，其具有构造成支撑衬底的顶表面和底表面。 多个温度控制元件设置在基座内。 绝缘体将温度控制元件热分离。 绝缘体由具有比基底（例如，气体或真空填充的室）更低的导热系数的绝缘材料制成。

公开(公告)号：US20070204907A1

公开(公告)日：2007-09-06

申请号：US11746779

申请日：2007-05-10

Applicant: Eric Strang

Inventor： Eric Strang

IPC: F17D1/04

CPC classification number: C23C16/45523 ,  C23C16/45574 ,  H01J37/3244 ,  Y10T137/0318 ,  Y10T137/0324

Abstract: An apparatus and method for gas injection sequencing in order to increase the gas injection total pressure while satisfying an upper limit to the process gas flow rate, thereby achieving gas flow uniformity during a sequence cycle and employing practical orifice configurations. The gas injection system includes a gas injection electrode having a plurality of regions, through which process gas flows into the process chamber. The gas injection system further includes a plurality of gas injection plenums, each independently coupled to one of the aforesaid regions and a plurality of gas valves having an inlet end and an outlet end, where the outlet end is independently coupled to one of the aforesaid plurality of gas injection plenums. The gas injection system includes a controller coupled to the plurality of gas valves for sequencing the flow of process gas through the aforesaid plurality of regions.

Abstract translation: 一种用于气体喷射排序的装置和方法，以便在满足工艺气体流量的上限的同时增加气体注入总压力，从而在顺序循环期间实现气流均匀性并采用实用的孔结构。 气体注入系统包括具有多个区域的气体注入电极，工艺气体通过该多个区域流入处理室。 气体注入系统还包括多个气体注入气室，每个气体注入气室各自独立地连接到前述区域中的一个区域，以及具有入口端和出口端的多个气体阀，其中出口端独立地与上述多个 的气体注入气室。 气体注入系统包括耦合到多个气体阀的控制器，用于对通过前述多个区域的处理气体的流动进行排序。

公开(公告)号：US20060138082A1

公开(公告)日：2006-06-29

申请号：US10539705

申请日：2003-12-19

Applicant: Eric Strang

Inventor： Eric Strang

IPC: G01L21/30 ,  C23F1/00

CPC classification number: H01J37/3244 ,  H01J37/32935

Abstract: A plasma processing device comprising a gas injection system is described, wherein the gas injection system comprises a gas injection assembly body, a consumable gas inject plate coupled to the gas injection assembly body, and a pressure sensor coupled to a gas injection plenum formed by the gas injection system body and the consumable gas inject plate. The gas injection system is configured to receive a process gas from at least one mass flow controller and distribute the process gas to the processing region within the plasma processing device, and the pressure sensor is configured to measure a gas injection pressure within the gas injection plenum. A controller, coupled to the pressure sensor, is configured to receive a signal from the pressure sensor and to determine a state of the consumable gas inject plate based upon the signal. A method of determining the state of the consumable gas inject plate comprises: measuring a change in the gas injection pressure associated with either a change in the process gas mass flow rate or the processing pressure; determining a response time for the change in pressure; and comparing the response time during erosion to a response time during no erosion.

公开(公告)号：US20060130966A1

公开(公告)日：2006-06-22

申请号：US11018922

申请日：2004-12-20

Applicant: Darko Babic ,  Eric Strang

Inventor： Darko Babic ,  Eric Strang

IPC: H01L21/306

CPC classification number: H01L21/02101 ,  G03F7/423 ,  H01L21/67057

Abstract: A method and system is described for treating a substrate with a supercritical fluid using a high temperature process. For example, when the supercritical fluid includes carbon dioxide in a supercritical state, the high temperature process is performed at a temperature approximately equal to and exceeding 80 degrees C., which is greater than the critical temperature of approximately 31 degrees C.

Abstract translation: 描述了使用高温处理用超临界流体处理衬底的方法和系统。 例如，当超临界流体包括处于超临界状态的二氧化碳时，高温处理在大约等于并超过80℃的温度下进行，该温度大于约31℃的临界温度。

公开(公告)号：US20060081564A1

公开(公告)日：2006-04-20

申请号：US10512862

申请日：2003-06-27

Applicant: Paul Moroz ,  Eric Strang

Inventor： Paul Moroz ,  Eric Strang

IPC: B23K9/00

CPC classification number: H01J37/32174 ,  H01J37/32706 ,  H01J37/32935 ,  H01J2237/0206

Abstract: An arc suppression system for plasma processing comprising at least one sensor coupled to the plasma processing system, and a controller coupled to the at least one sensor. The controller provides at least one algorithm for determining a state of plasma in contact with a substrate using at least one signal generated from the at least one sensor and controlling a plasma processing system in order to suppress an arcing event. When voltage differences between sensors exceed a target difference, the plasma processing system is determined to be susceptible to arcing. During this condidtion, an operator is notified, and decision can be made to either continue processing, modify processing, or discontinue processing.

Abstract translation: 一种用于等离子体处理的电弧抑制系统，其包括耦合到所述等离子体处理系统的至少一个传感器，以及耦合到所述至少一个传感器的控制器。 控制器提供至少一种算法，用于使用从至少一个传感器产生的至少一个信号来确定与衬底接触的等离子体的状态，并控制等离子体处理系统以抑制电弧事件。 当传感器之间的电压差超过目标差异时，等离子体处理系统被确定为容易产生电弧。 在这种情况下，通知操作者，并且可以做出决定以继续处理，修改处理或停止处理。

公开(公告)号：US20050071038A1

公开(公告)日：2005-03-31

申请号：US10673507

申请日：2003-09-30

Applicant: Eric Strang

Inventor： Eric Strang

IPC: G06F17/50 ,  H01L20060101 ,  G06F19/00

CPC classification number: G06F17/5018 ,  G06F2217/10

Abstract: A method, system and computer readable medium for controlling a process performed by a semiconductor processing tool includes inputting data relating to a process performed by the semiconductor processing tool, and inputting a first principles physical model relating to the semiconductor processing tool. First principles simulation is then performed using the input data and the physical model to provide a first principles simulation result, and the first principles simulation result is used to control the process performed by the semiconductor processing tool.

Abstract translation: 用于控制由半导体处理工具执行的处理的方法，系统和计算机可读介质包括输入与由半导体处理工具执行的处理相关的数据，以及输入与半导体处理工具相关的第一原理物理模型。 然后使用输入数据和物理模型执行第一原理模拟以提供第一原理模拟结果，并且第一原理模拟结果用于控制由半导体处理工具执行的处理。

公开(公告)号：US20070068625A1

公开(公告)日：2007-03-29

申请号：US11233025

申请日：2005-09-23

Applicant: Merritt Funk ,  David Horak ,  Eric Strang ,  Lee Chen

Inventor： Merritt Funk ,  David Horak ,  Eric Strang ,  Lee Chen

IPC: H01L21/306 ,  C23C16/00

CPC classification number: C23C16/4412 ,  C23C16/45565 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32834

Abstract: A plasma processing system includes a processing chamber, a substrate holder configured to hold a substrate for plasma processing, and a gas injection assembly. The gas injection assembly includes a first evacuation port located substantially in a center of the gas injection assembly and configured to evacuate gases from a central region of the substrate, and a gas injection system configured to inject gases in the process chamber. The plasma processing system also includes a second evacuation port configured to evacuate gases from a peripheral region surrounding the central region of the substrate.

Abstract translation: 等离子体处理系统包括处理室，被配置为保持用于等离子体处理的衬底的衬底保持器和气体注入组件。 气体注入组件包括基本上位于气体注入组件的中心并且构造成从衬底的中心区域排出气体的第一排气口，以及构造成在处理室中注入气体的气体注入系统。 等离子体处理系统还包括构造成从围绕衬底的中心区域的周边区域排出气体的第二排气口。

公开(公告)号：US20070020776A1

公开(公告)日：2007-01-25

申请号：US11517389

申请日：2006-09-08

Applicant: Eric Strang ,  Richard Parsons

Inventor： Eric Strang ,  Richard Parsons

IPC: H01L21/00

CPC classification number: H01L21/67253 ,  G01B15/02 ,  H01J37/32192 ,  H01J37/32275 ,  H01J37/3299 ,  H01L21/67069

Abstract: A wall film monitoring system includes first and second microwave mirrors in a plasma processing chamber each having a concave surface. The concave surface of the second mirror is oriented opposite the concave surface of the first mirror. A power source is coupled to the first mirror and configured to produce a microwave signal. A detector is coupled to at least one of the first mirror and the second mirror and configured to measure a vacuum resonance voltage of the microwave signal. A control system is connected to the detector that compares a first measured voltage and a second measured voltage and determines whether the second voltage exceeds a threshold value. A method of monitoring wall film in a plasma chamber includes loading a wafer in the chamber, setting a frequency of a microwave signal output to a resonance frequency, and measuring a first vacuum resonance voltage of the microwave signal. The method includes processing the wafer, measuring a second vacuum resonance voltage of the microwave signal, and determining whether the second measured voltage exceeds a threshold value using the first measured voltage as a reference value.

Abstract translation: 墙膜监测系统包括等离子体处理室中的具有凹面的第一和第二微波反射镜。 第二反射镜的凹面与第一反射镜的凹面相对。 电源耦合到第一反射镜并且被配置为产生微波信号。 检测器耦合到第一反射镜和第二反射镜中的至少一个并且被配置为测量微波信号的真空谐振电压。 控制系统连接到检测器，该检测器比较第一测量电压和第二测量电压，并确定第二电压是否超过阈值。 一种监测等离子体室中的壁膜的方法包括将晶片装载在室中，将微波信号输出的频率设定为谐振频率，以及测量微波信号的第一真空谐振电压。 该方法包括处理晶片，测量微波信号的第二真空谐振电压，以及使用第一测量电压作为参考值来确定第二测量电压是否超过阈值。

公开(公告)号：US20050235917A1

公开(公告)日：2005-10-27

申请号：US10514717

申请日：2003-05-29

Applicant: Jim Fordemwalt ,  Eric Strang ,  Steven Fink

Inventor： Jim Fordemwalt ,  Eric Strang ,  Steven Fink

IPC: H01L21/3065 ,  C23C16/00 ,  C23C16/44 ,  C23C16/52 ,  H01L21/00 ,  H01L21/205

CPC classification number: H01L21/67253 ,  C23C16/4407 ,  C23C16/52

Abstract: An apparatus for monitoring film deposition on a chamber wall in a process chamber. The apparatus includes a surface acoustic wave device provided on the chamber wall. The surface acoustic wave device is actuated to achieve a resonance frequency, and the resonance frequency produced is detected to determine whether a critical thickness of film on the wall of the chamber has been achieved, where an amount of decrease in the resonance frequency is proportional to a thickness of film on the chamber wall. The process chamber is cleaned when the resonance frequency detected falls within a first predetermined range.

Abstract translation: 一种用于监测处理室中的室壁上的膜沉积的装置。 该装置包括设置在室壁上的表面声波装置。 激励表面声波装置以实现谐振频率，并且检测所产生的谐振频率，以确定是否已经实现了室壁上的膜的临界厚度，其中谐振频率的减小量与 室壁上的膜厚度。 当检测到的共振频率落在第一预定范围内时，清洁处理室。