公开(公告)号：US20050098265A1

公开(公告)日：2005-05-12

申请号：US10705224

申请日：2003-11-12

Applicant: Steven Fink ,  Eric Strang ,  Arthur Laflamme ,  Jay Wallace ,  Sandra Hyland

Inventor： Steven Fink ,  Eric Strang ,  Arthur Laflamme ,  Jay Wallace ,  Sandra Hyland

IPC: H01J37/32 ,  H01L21/00 ,  C23F1/00

CPC classification number: H01J37/32633 ,  H01J37/32834 ,  H01L21/67069

Abstract: A baffle plate assembly, configured to be coupled to a substrate holder in a plasma processing system, comprises a baffle plate having one or more openings to permit the passage of gas there through, wherein the coupling of the baffle plate to the substrate holder facilitates auto-centering of the baffle plate in the plasma processing system. For example, a centering ring mounted in the substrate holder can comprise a centering feature configured to couple with a mating feature on the baffle plate. After initial assembly of the plasma processing system, the baffle plate can be replaced and centered within the plasma processing system without disassembly and re-assembly of the substrate holder.

Abstract translation: 构造成在等离子体处理系统中耦合到衬底保持器的挡板组件包括具有一个或多个开口以允许气体在其中通过的挡板，其中挡板与衬底保持器的联接有利于自动 - 等离子体处理系统中的挡板的重心。 例如，安装在基板保持器中的定心环可以包括配置成与挡板上的配合特征联接的定心特征。 在初始组装等离子体处理系统之后，挡板可以在等离子体处理系统内更换并居中，而不会拆卸和重新组装衬底支架。

公开(公告)号：US20080092818A1

公开(公告)日：2008-04-24

申请号：US11961355

申请日：2007-12-20

Applicant: Steven Fink ,  Eric Strang

Inventor： Steven Fink ,  Eric Strang

IPC: C23C16/46 ,  C23C16/00

CPC classification number: H01L21/67103 ,  Y10T279/23

Abstract: A thermally zoned substrate holder including a substantially cylindrical base having top and bottom surfaces configured to support a substrate. A plurality of temperature control elements are disposed within the base. An insulator thermally separates the temperature control elements. The insulator is made from an insulting material having a lower coefficient of thermal conductivity than the base (e.g., a gas- or vacuum-filled chamber).

Abstract translation: 一种热分区衬底保持器，其包括基本上圆柱形的基部，其具有构造成支撑衬底的顶表面和底表面。 多个温度控制元件设置在基座内。 绝缘体将温度控制元件热分离。 绝缘体由具有比基底（例如，气体或真空填充的室）更低的导热系数的绝缘材料制成。

公开(公告)号：US20050235917A1

公开(公告)日：2005-10-27

申请号：US10514717

申请日：2003-05-29

Applicant: Jim Fordemwalt ,  Eric Strang ,  Steven Fink

Inventor： Jim Fordemwalt ,  Eric Strang ,  Steven Fink

IPC: H01L21/3065 ,  C23C16/00 ,  C23C16/44 ,  C23C16/52 ,  H01L21/00 ,  H01L21/205

CPC classification number: H01L21/67253 ,  C23C16/4407 ,  C23C16/52

Abstract: An apparatus for monitoring film deposition on a chamber wall in a process chamber. The apparatus includes a surface acoustic wave device provided on the chamber wall. The surface acoustic wave device is actuated to achieve a resonance frequency, and the resonance frequency produced is detected to determine whether a critical thickness of film on the wall of the chamber has been achieved, where an amount of decrease in the resonance frequency is proportional to a thickness of film on the chamber wall. The process chamber is cleaned when the resonance frequency detected falls within a first predetermined range.

Abstract translation: 一种用于监测处理室中的室壁上的膜沉积的装置。 该装置包括设置在室壁上的表面声波装置。 激励表面声波装置以实现谐振频率，并且检测所产生的谐振频率，以确定是否已经实现了室壁上的膜的临界厚度，其中谐振频率的减小量与 室壁上的膜厚度。 当检测到的共振频率落在第一预定范围内时，清洁处理室。

公开(公告)号：US20060060303A1

公开(公告)日：2006-03-23

申请号：US11236535

申请日：2005-09-28

Applicant: Steven Fink ,  Paul Moroz ,  Eric Strang ,  Andrej Mitrovic

Inventor： Steven Fink ,  Paul Moroz ,  Eric Strang ,  Andrej Mitrovic

IPC: B08B6/00 ,  H01L21/306 ,  C23C16/00

CPC classification number: H01J37/3244 ,  H01J2237/022

Abstract: A plasma processing system includes a chamber containing a plasma processing region and a chuck constructed and arranged to support a substrate within the chamber in the processing region. The plasma processing system further includes at least one gas injection passage in communication with the chamber and configured to facilitate removal of particles from the chamber by passing purge gas therethrough. In one embodiment, the plasma processing system can include an electrode configured to attract or repel particles in the chamber by electrostatic force when the electrode is biased with DC or RF power. A method of processing a substrate in a plasma processing system includes removing particles in a chamber of the plasma processing system by supplying purge gas through at least one gas injection passage in communication with the chamber.

Abstract translation: 等离子体处理系统包括容纳等离子体处理区域的腔室和构造和布置成在处理区域内的腔室内支撑衬底的卡盘。 等离子体处理系统还包括至少一个与室连通的气体注入通道，并且构造成便于通过吹扫气体从腔室中除去颗粒。 在一个实施例中，等离子体处理系统可以包括电极，其被配置为当电极用DC或RF功率偏置时通过静电力吸引或排斥腔室中的颗粒。 一种在等离子体处理系统中处理衬底的方法，包括通过与室连通的至少一个气体注入通道供应净化气体来去除等离子体处理系统的腔室中的颗粒。

公开(公告)号：US20050098106A1

公开(公告)日：2005-05-12

申请号：US10705225

申请日：2003-11-12

Applicant: Steven Fink ,  Eric Strang ,  Michael Landis

Inventor： Steven Fink ,  Eric Strang ,  Michael Landis

IPC: H01J37/32 ,  C23C16/00

CPC classification number: H01J37/32605 ,  H01J37/32009 ,  H01J37/3244

Abstract: An electrode plate, configured to be coupled to an electrode in a plasma processing system, comprises a plurality of gas injection holes configured to receive gas injection devices. The electrode plate comprises three or more mounting holes, wherein the electrode plate is configured to be coupled with an electrode in the plasma processing system by aligning and coupling the three or more mounting holes with three or more mounting screws attached to the electrode.

Abstract translation: 构造成耦合到等离子体处理系统中的电极的电极板包括被配置为接收气体注入装置的多个气体注入孔。 电极板包括三个或更多个安装孔，其中电极板被配置为通过将三个或更多个安装孔与附接到电极的三个或更多个安装螺钉对准并联接在等离子体处理系统中与电极耦合。

公开(公告)号：US20060032287A1

公开(公告)日：2006-02-16

申请号：US10521118

申请日：2003-07-23

Applicant: Eric Strang ,  Richard Parsons ,  Jody Goldfield

Inventor： Eric Strang ,  Richard Parsons ,  Jody Goldfield

IPC: G01N19/02 ,  G01N3/56

CPC classification number: H01J37/32192 ,  H01J37/32935 ,  H01J37/3299

Abstract: The present invention provides a diagnostic system for plasma processing, wherein the diagnostic system comprises a multi-modal resonator, a power source, a detector, and a controller. The controller is coupled to the power source and the detector and it is configured to provide a man-machine interface for performing several monitoring and controlling functions associated with the diagnostic system including: a Gunn diode voltage monitor, a Gunn diode current monitor, a varactor diode voltage monitor, a detector voltage monitor, a varactor voltage control, a varactor voltage sweep control, a resonance lock-on control, a graphical user control, and an electron density monitor. The diagnostic system can further provide a remote controller coupled to the controller and configured to provide a remote man-machine interface. The remote man-machine interface. The remote man-machine interface can provide a graphical user interface in order to permit remote control of the diagnostic system by an operator. In addition, the present invention provides several methods of controlling the diagnostic system in order to perform both monitor and control functions.

Abstract translation: 本发明提供了一种用于等离子体处理的诊断系统，其中诊断系统包括多模谐振器，电源，检测器和控制器。 控制器耦合到电源和检测器，并且其被配置为提供用于执行与诊断系统相关联的多个监视和控制功能的人机接口，包括：耿氏二极管电压监视器，耿氏二极管电流监视器，变容二极管 二极管电压监视器，检测器电压监视器，变容二极管电压控制，变容二极管电压扫描控制，共振锁定控制，图形用户控制和电子密度监视器。 诊断系统还可以提供耦合到控制器并被配置为提供远程人机界面的遥控器。 远程人机界面。 远程人机界面可以提供图形用户界面，以便允许操作者对诊断系统进行远程控制。 此外，本发明提供了几种控制诊断系统以便执行监视和控制功能的方法。

公开(公告)号：US20050270895A1

公开(公告)日：2005-12-08

申请号：US11201109

申请日：2005-08-11

Applicant: Eric Strang

Inventor： Eric Strang

IPC: B01F3/02 ,  B01F5/02 ,  B01J4/00 ,  B01J19/26 ,  C23C16/44 ,  C23C16/455 ,  C23G5/00

CPC classification number: C23C16/45512 ,  B01F3/02 ,  B01F5/0256 ,  B01J4/001 ,  B01J19/26 ,  C23C16/455 ,  C23G5/00 ,  Y10T137/87652

Abstract: A chemical processing system includes a mixing chamber coupled to the chemical processing system. A stream of first process gas and a stream of second process gas are introduced into the mixing chamber. The stream of first process gas and the stream of second process gas interact with each other to form a mixed process gas, which is supplied to the substrate for processing thereof. A method of mixing process gas in a mixing chamber of a chemical processing system is provided. The method includes injecting a stream of first process gas and a stream of second process gas into the mixing chamber, causing the streams of the first process gas and the second process gas to interact and mixing the first process gas and the second process gas in the mixing chamber to form a mixed process gas. A mixing system is also provided.

Abstract translation: 化学处理系统包括耦合到化学处理系统的混合室。 将第一工艺气体流和第二工艺气体流引入混合室。 第一工艺气体流和第二工艺气体流彼此相互作用以形成混合工艺气体，其被提供给衬底以进行处理。 提供了一种在化学处理系统的混合室中混合处理气体的方法。 该方法包括将第一工艺气体流和第二工艺气体流注入到混合室中，使得第一工艺气体和第二工艺气体的流在第一工艺气体和第二工艺气体之间相互作用并混合 混合室以形成混合工艺气体。 还提供混合系统。

公开(公告)号：US20050171730A1

公开(公告)日：2005-08-04

申请号：US10767347

申请日：2004-01-30

Applicant: Andrej Mitrovic ,  Eric Strang

Inventor： Andrej Mitrovic ,  Eric Strang

IPC: G01B11/06 ,  G06F15/00 ,  H01J37/32

CPC classification number: G01B11/0683 ,  H01J37/32935 ,  H01J37/32963

Abstract: A method for monitoring consumption of a component, including the steps of emitting a radiation beam onto a first area of the component and detecting a portion of the radiation beam that is refracted by the component. A radiation level signal is generated based at least on a strength of the detected portion of the radiation beam, and a thickness of the component is determined based on the radiation level signal. The thickness of the component is compared to a predetermined thickness value, and a status signal is generated when the comparing step determines that the thickness of the component is substantially equal to or below the predetermined thickness value. When the comparing step determines that the thickness of the component is greater than the predetermined thickness value, the component is exposed to a process that can erode at least a portion of the component.

Abstract translation: 一种用于监视部件的消耗的方法，包括以下步骤：将辐射束发射到部件的第一区域上，并检测被部件折射的辐射束的一部分。 至少基于辐射束的被检测部分的强度产生辐射水平信号，并且基于辐射水平信号确定分量的厚度。 将部件的厚度与预定的厚度值进行比较，并且当比较步骤确定部件的厚度基本上等于或低于预定厚度值时，产生状态信号。 当比较步骤确定组件的厚度大于预定厚度值时，组件暴露于可能侵蚀部件的至少一部分的过程。

公开(公告)号：US20060093746A1

公开(公告)日：2006-05-04

申请号：US10980172

申请日：2004-11-04

Applicant: Eric Strang

Inventor： Eric Strang

IPC: B05D1/36 ,  B05D1/18 ,  B05D7/00

CPC classification number: C23C18/00 ,  C23C18/1619 ,  C23C18/1658 ,  C23C18/1678 ,  C23C18/1685 ,  C23C18/40

Abstract: A high pressure processing system including a chamber configured to house a substrate. A fluid introduction system includes at least one composition supply system configured to supply a first composition and a second composition, and at least one fluid supply system configured to supply a fluid. The fluid supply system is configured to alternately and discontinuously introduce the first composition and the second composition to the chamber within the fluid.

公开(公告)号：US20050178335A1

公开(公告)日：2005-08-18

申请号：US11103542

申请日：2005-04-12

Applicant: Eric Strang ,  Wayne Johnson

Inventor： Eric Strang ,  Wayne Johnson

IPC: H01L21/26 ,  H01L21/00 ,  H01L21/687 ,  C23C16/00

CPC classification number: H01L21/68757 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/68785

Abstract: A method and an apparatus utilized for thermal processing of substrates during semiconductor manufacturing. The method includes heating the substrate to a predetermined temperature using a heating assembly, cooling the substrate to the predetermined temperature using a cooling assembly located such that a thermal conductance region is provided between the heating and cooling assemblies, and adjusting a thermal conductance of the thermal conductance region to aid in heating and cooling of the substrate. The apparatus includes a heating assembly, a cooling assembly located such that a thermal conductance region is provided between the heating and cooling assemblies, and a structure or configuration for adjusting a thermal conductance of the thermal conductance region.

Abstract translation: 一种用于在半导体制造期间对衬底进行热处理的方法和装置。 该方法包括使用加热组件将衬底加热至预定温度，使用冷却组件将衬底冷却至预定温度，该冷却组件位于加热组件和冷却组件之间提供导热区域，并调节热电导率 导电区域以帮助加热和冷却基板。 该装置包括加热组件，冷却组件，其定位成使得在加热和冷却组件之间设置热传导区域，以及用于调节导热区域的热导率的结构或构造。