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公开(公告)号：US07462243B2
公开(公告)日：2008-12-09
申请号：US11233077
申请日：2005-09-23
申请人： Arthur H Laflamme, Jr. , Jay Wallace , Eric Strang
发明人： Arthur H Laflamme, Jr. , Jay Wallace , Eric Strang
CPC分类号： H01L21/67069 , C23C16/45565
摘要： A chemical processing system includes a processing chamber containing a chemical processing region and a gas injection system. The gas injection system includes at least one first gas injection orifice and at least one second gas injection orifice in communication with the chemical processing region to expose a substrate to mixed first and second process gases. Other embodiments of the chemical processing system can include a sensor to sense a mixing rate of the process gases or a shroud defining a portion of the at least one first gas injection orifice to control mixing of the process gases. A method of mixing process gas in a chemical processing region of a chemical processing system is provided in which a first process gas and a second process gas are injected into the chemical processing region and mixed. A mixture rate is sensed and used to control the mixing.
摘要翻译： 化学处理系统包括含有化学处理区域和气体注入系统的处理室。 气体注入系统包括与化学处理区域连通的至少一个第一气体注入孔口和至少一个第二气体注入孔，以将衬底暴露于混合的第一和第二工艺气体。 化学处理系统的其它实施例可以包括感测处理气体的混合速率的传感器或限定至少一个第一气体喷射孔口的一部分的护罩以控制处理气体的混合。 提供了在化学处理系统的化学处理区域中混合处理气体的方法，其中将第一处理气体和第二处理气体注入化学处理区域并混合。 检测混合物速率并用于控制混合。
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公开(公告)号：US20050098265A1
公开(公告)日：2005-05-12
申请号：US10705224
申请日：2003-11-12
申请人： Steven Fink , Eric Strang , Arthur Laflamme , Jay Wallace , Sandra Hyland
发明人： Steven Fink , Eric Strang , Arthur Laflamme , Jay Wallace , Sandra Hyland
CPC分类号： H01J37/32633 , H01J37/32834 , H01L21/67069
摘要： A baffle plate assembly, configured to be coupled to a substrate holder in a plasma processing system, comprises a baffle plate having one or more openings to permit the passage of gas there through, wherein the coupling of the baffle plate to the substrate holder facilitates auto-centering of the baffle plate in the plasma processing system. For example, a centering ring mounted in the substrate holder can comprise a centering feature configured to couple with a mating feature on the baffle plate. After initial assembly of the plasma processing system, the baffle plate can be replaced and centered within the plasma processing system without disassembly and re-assembly of the substrate holder.
摘要翻译： 构造成在等离子体处理系统中耦合到衬底保持器的挡板组件包括具有一个或多个开口以允许气体在其中通过的挡板，其中挡板与衬底保持器的联接有利于自动 - 等离子体处理系统中的挡板的重心。 例如，安装在基板保持器中的定心环可以包括配置成与挡板上的配合特征联接的定心特征。 在初始组装等离子体处理系统之后，挡板可以在等离子体处理系统内更换并居中，而不会拆卸和重新组装衬底支架。
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公开(公告)号：US20060090850A1
公开(公告)日：2006-05-04
申请号：US11233077
申请日：2005-09-23
申请人： Arthur Laflamme , Jay Wallace , Eric Strang
发明人： Arthur Laflamme , Jay Wallace , Eric Strang
IPC分类号： H01L21/306 , C23C16/00 , G01L21/30
CPC分类号： H01L21/67069 , C23C16/45565
摘要： A chemical processing system includes a processing chamber containing a chemical processing region and a gas injection system. The gas injection system includes at least one first gas injection orifice and at least one second gas injection orifice in communication with the chemical processing region to expose a substrate to mixed first and second process gases. Other embodiments of the chemical processing system can include a sensor to sense a mixing rate of the process gases or a shroud defining a portion of the at least one first gas injection orifice to control mixing of the process gases. A method of mixing process gas in a chemical processing region of a chemical processing system is provided in which a first process gas and a second process gas are injected into the chemical processing region and mixed. A mixture rate is sensed and used to control the mixing.
摘要翻译： 化学处理系统包括含有化学处理区域和气体注入系统的处理室。 气体注入系统包括与化学处理区域连通的至少一个第一气体注入孔口和至少一个第二气体注入孔，以将衬底暴露于混合的第一和第二工艺气体。 化学处理系统的其它实施例可以包括感测处理气体的混合速率的传感器或限定至少一个第一气体喷射孔的一部分的护罩以控制处理气体的混合。 提供了在化学处理系统的化学处理区域中混合处理气体的方法，其中将第一处理气体和第二处理气体注入化学处理区域并混合。 检测混合物速率并用于控制混合。
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公开(公告)号：US20060032287A1
公开(公告)日：2006-02-16
申请号：US10521118
申请日：2003-07-23
申请人： Eric Strang , Richard Parsons , Jody Goldfield
发明人： Eric Strang , Richard Parsons , Jody Goldfield
CPC分类号： H01J37/32192 , H01J37/32935 , H01J37/3299
摘要： The present invention provides a diagnostic system for plasma processing, wherein the diagnostic system comprises a multi-modal resonator, a power source, a detector, and a controller. The controller is coupled to the power source and the detector and it is configured to provide a man-machine interface for performing several monitoring and controlling functions associated with the diagnostic system including: a Gunn diode voltage monitor, a Gunn diode current monitor, a varactor diode voltage monitor, a detector voltage monitor, a varactor voltage control, a varactor voltage sweep control, a resonance lock-on control, a graphical user control, and an electron density monitor. The diagnostic system can further provide a remote controller coupled to the controller and configured to provide a remote man-machine interface. The remote man-machine interface. The remote man-machine interface can provide a graphical user interface in order to permit remote control of the diagnostic system by an operator. In addition, the present invention provides several methods of controlling the diagnostic system in order to perform both monitor and control functions.
摘要翻译： 本发明提供了一种用于等离子体处理的诊断系统，其中诊断系统包括多模谐振器，电源，检测器和控制器。 控制器耦合到电源和检测器，并且其被配置为提供用于执行与诊断系统相关联的多个监视和控制功能的人机接口，包括：耿氏二极管电压监视器，耿氏二极管电流监视器，变容二极管 二极管电压监视器，检测器电压监视器，变容二极管电压控制，变容二极管电压扫描控制，共振锁定控制，图形用户控制和电子密度监视器。 诊断系统还可以提供耦合到控制器并被配置为提供远程人机界面的遥控器。 远程人机界面。 远程人机界面可以提供图形用户界面，以便允许操作者对诊断系统进行远程控制。 此外，本发明提供了几种控制诊断系统以便执行监视和控制功能的方法。
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公开(公告)号：US20050270895A1
公开(公告)日：2005-12-08
申请号：US11201109
申请日：2005-08-11
申请人： Eric Strang
发明人： Eric Strang
CPC分类号： C23C16/45512 , B01F3/02 , B01F5/0256 , B01J4/001 , B01J19/26 , C23C16/455 , C23G5/00 , Y10T137/87652
摘要： A chemical processing system includes a mixing chamber coupled to the chemical processing system. A stream of first process gas and a stream of second process gas are introduced into the mixing chamber. The stream of first process gas and the stream of second process gas interact with each other to form a mixed process gas, which is supplied to the substrate for processing thereof. A method of mixing process gas in a mixing chamber of a chemical processing system is provided. The method includes injecting a stream of first process gas and a stream of second process gas into the mixing chamber, causing the streams of the first process gas and the second process gas to interact and mixing the first process gas and the second process gas in the mixing chamber to form a mixed process gas. A mixing system is also provided.
摘要翻译： 化学处理系统包括耦合到化学处理系统的混合室。 将第一工艺气体流和第二工艺气体流引入混合室。 第一工艺气体流和第二工艺气体流彼此相互作用以形成混合工艺气体，其被提供给衬底以进行处理。 提供了一种在化学处理系统的混合室中混合处理气体的方法。 该方法包括将第一工艺气体流和第二工艺气体流注入到混合室中，使得第一工艺气体和第二工艺气体的流在第一工艺气体和第二工艺气体之间相互作用并混合 混合室以形成混合工艺气体。 还提供混合系统。
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公开(公告)号：US20050171730A1
公开(公告)日：2005-08-04
申请号：US10767347
申请日：2004-01-30
申请人： Andrej Mitrovic , Eric Strang
发明人： Andrej Mitrovic , Eric Strang
CPC分类号： G01B11/0683 , H01J37/32935 , H01J37/32963
摘要： A method for monitoring consumption of a component, including the steps of emitting a radiation beam onto a first area of the component and detecting a portion of the radiation beam that is refracted by the component. A radiation level signal is generated based at least on a strength of the detected portion of the radiation beam, and a thickness of the component is determined based on the radiation level signal. The thickness of the component is compared to a predetermined thickness value, and a status signal is generated when the comparing step determines that the thickness of the component is substantially equal to or below the predetermined thickness value. When the comparing step determines that the thickness of the component is greater than the predetermined thickness value, the component is exposed to a process that can erode at least a portion of the component.
摘要翻译： 一种用于监视部件的消耗的方法，包括以下步骤：将辐射束发射到部件的第一区域上，并检测被部件折射的辐射束的一部分。 至少基于辐射束的被检测部分的强度产生辐射水平信号，并且基于辐射水平信号确定分量的厚度。 将部件的厚度与预定的厚度值进行比较，并且当比较步骤确定部件的厚度基本上等于或低于预定厚度值时，产生状态信号。 当比较步骤确定组件的厚度大于预定厚度值时，组件暴露于可能侵蚀部件的至少一部分的过程。
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公开(公告)号：US20060093746A1
公开(公告)日：2006-05-04
申请号：US10980172
申请日：2004-11-04
申请人： Eric Strang
发明人： Eric Strang
CPC分类号： C23C18/00 , C23C18/1619 , C23C18/1658 , C23C18/1678 , C23C18/1685 , C23C18/40
摘要： A high pressure processing system including a chamber configured to house a substrate. A fluid introduction system includes at least one composition supply system configured to supply a first composition and a second composition, and at least one fluid supply system configured to supply a fluid. The fluid supply system is configured to alternately and discontinuously introduce the first composition and the second composition to the chamber within the fluid.
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公开(公告)号：US20050178335A1
公开(公告)日：2005-08-18
申请号：US11103542
申请日：2005-04-12
申请人： Eric Strang , Wayne Johnson
发明人： Eric Strang , Wayne Johnson
IPC分类号： H01L21/26 , H01L21/00 , H01L21/687 , C23C16/00
CPC分类号： H01L21/68757 , H01L21/67109 , H01L21/67248 , H01L21/68785
摘要： A method and an apparatus utilized for thermal processing of substrates during semiconductor manufacturing. The method includes heating the substrate to a predetermined temperature using a heating assembly, cooling the substrate to the predetermined temperature using a cooling assembly located such that a thermal conductance region is provided between the heating and cooling assemblies, and adjusting a thermal conductance of the thermal conductance region to aid in heating and cooling of the substrate. The apparatus includes a heating assembly, a cooling assembly located such that a thermal conductance region is provided between the heating and cooling assemblies, and a structure or configuration for adjusting a thermal conductance of the thermal conductance region.
摘要翻译： 一种用于在半导体制造期间对衬底进行热处理的方法和装置。 该方法包括使用加热组件将衬底加热至预定温度，使用冷却组件将衬底冷却至预定温度，该冷却组件位于加热组件和冷却组件之间提供导热区域，并调节热电导率 导电区域以帮助加热和冷却基板。 该装置包括加热组件，冷却组件，其定位成使得在加热和冷却组件之间设置热传导区域，以及用于调节导热区域的热导率的结构或构造。
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9.发明申请System and method for using first-principles simulation to control a semiconductor manufacturing process 有权使用第一原理模拟来控制半导体制造工艺的系统和方法公开(公告)号：US20050071035A1
公开(公告)日：2005-03-31
申请号：US10673467
申请日：2003-09-30
申请人： Eric Strang
发明人： Eric Strang
IPC分类号： H01L20060101 , G06F19/00
CPC分类号： G05B19/41885 , Y02P90/26 , Y02P90/86
摘要： A method, system and computer readable medium for controlling a process performed by a semiconductor processing tool. The method includes inputting data relating to a process performed by the semiconductor processing tool, inputting a first principles physical model relating to the semiconductor processing tool, performing first principles simulation using the input data and the physical model to provide a first principles simulation result. The first principles simulation result is used to build an empirical model, and at least one of the first principles simulation result and the empirical model is selected to control the process performed by the semiconductor processing tool.
摘要翻译： 一种用于控制由半导体处理工具执行的处理的方法，系统和计算机可读介质。 该方法包括输入与半导体处理工具执行的处理有关的数据，输入与半导体处理工具相关的第一原理物理模型，使用输入数据和物理模型执行第一原理模拟以提供第一原理模拟结果。 第一原理模拟结果用于建立经验模型，并选择第一原理模拟结果和经验模型中的至少一个来控制半导体处理工具执行的过程。
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公开(公告)号：US20080092818A1
公开(公告)日：2008-04-24
申请号：US11961355
申请日：2007-12-20
申请人： Steven Fink , Eric Strang
发明人： Steven Fink , Eric Strang
CPC分类号： H01L21/67103 , Y10T279/23
摘要： A thermally zoned substrate holder including a substantially cylindrical base having top and bottom surfaces configured to support a substrate. A plurality of temperature control elements are disposed within the base. An insulator thermally separates the temperature control elements. The insulator is made from an insulting material having a lower coefficient of thermal conductivity than the base (e.g., a gas- or vacuum-filled chamber).
摘要翻译： 一种热分区衬底保持器，其包括基本上圆柱形的基部，其具有构造成支撑衬底的顶表面和底表面。 多个温度控制元件设置在基座内。 绝缘体将温度控制元件热分离。 绝缘体由具有比基底（例如，气体或真空填充的室）更低的导热系数的绝缘材料制成。
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