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    Method for the selective removal of an unsilicided metal
    11.
    发明授权
    Method for the selective removal of an unsilicided metal 有权
    选择性除去未硅化金属的方法

    公开(公告)号：US07569482B2

    公开(公告)日：2009-08-04

    申请号：US11654388

    申请日：2007-01-15

    Applicant: Aomar Halimaoui

    Inventor： Aomar Halimaoui

    IPC: H01L21/302 ,  H01L21/461 ,  H01L21/4763 ,  H01L21/44

    CPC classification number: H01L21/32134 ,  H01L21/02068 ,  H01L21/28518

    Abstract: An integrated circuit is silicided by depositing at least one metal on a silicon-containing region and forming a metal silicide. Residue metal that has not been silicided during the formation of the metal silicide is then removed. The removal of the residue metal involves the conversion of the residue metal to an alloy containing the germanide of said metal with minimal if any adverse affect on the silicide. Next, the alloy is removed, in a manner selective to the silicide, by dissolving the alloy in a chemical solution.

    Abstract translation: 通过在含硅区域上沉积至少一种金属并形成金属硅化物将集成电路硅化。 然后去除在金属硅化物形成期间未被硅化的残余金属。 残留金属的去除涉及如果对硅化物有任何不利影响，则残留金属转化为含有所述金属的锗化物的合金。 接下来，通过将合金溶解在化学溶液中，以对硅化物有选择的方式除去合金。

    Method for the selective removal of an unsilicided metal
    12.
    发明申请
    Method for the selective removal of an unsilicided metal 有权
    选择性除去未硅化金属的方法

    公开(公告)号：US20070197029A1

    公开(公告)日：2007-08-23

    申请号：US11654388

    申请日：2007-01-15

    Applicant: Aomar Halimaoui

    Inventor： Aomar Halimaoui

    IPC: H01L21/44

    CPC classification number: H01L21/32134 ,  H01L21/02068 ,  H01L21/28518

    Abstract: An integrated circuit is silicided by depositing at least one metal on a silicon-containing region and forming a metal silicide. Residue metal that has not been silicided during the formation of the metal silicide is then removed. The removal of the residue metal involves the conversion of the residue metal to an alloy containing the germanide of said metal with minimal if any adverse affect on the silicide. Next, the alloy is removed, in a manner selective to the silicide, by dissolving the alloy in a chemical solution.

    Abstract translation: 通过在含硅区域上沉积至少一种金属并形成金属硅化物将集成电路硅化。 然后去除在金属硅化物形成期间未被硅化的残余金属。 残留金属的去除涉及如果对硅化物有任何不利影响，则残留金属转化为含有所述金属的锗化物的合金。 接下来，通过将合金溶解在化学溶液中，以对硅化物有选择的方式除去合金。

    Antireflection treatment of reflective surfaces
    14.
    发明授权
    Antireflection treatment of reflective surfaces 失效
    反射表面的防反射处理

    公开(公告)号：US06177235B1

    公开(公告)日：2001-01-23

    申请号：US08996684

    申请日：1997-12-23

    Applicant: Jean Marc Francou ,  Aomar Halimaoui ,  Andr{acute over (e)} Schiltz

    Inventor： Jean Marc Francou ,  Aomar Halimaoui ,  Andr{acute over (e)} Schiltz

    IPC: G03F726

    CPC classification number: H01L21/0276 ,  Y10S430/151 ,  Y10S438/96 ,  Y10S438/964

    Abstract: The present invention relates to an improved photolithography process particularly suitable for high-resolution optical lithography techniques using the g, h and i lines of the spectrum of mercury and short-wavelength UV, comprising, prior to deposition of the photosensitive resin on the layer of material to be lithographically patterned, the formation of an antireflective porous layer within the said layer to be lithographically patterned and on the surface of the latter.

    Abstract translation: 本发明涉及一种改进的光刻工艺，特别适用于使用汞和短波长紫外光谱的g，h和i线的高分辨率光刻技术，包括在将感光树脂沉积在 待光刻图案的材料，在所述层内形成抗光反射多孔层以进行光刻图案化，并在其表面上形成。

    HOUSING, IN PARTICULAR FOR A BIOFUEL CELL
    16.
    发明申请
    HOUSING, IN PARTICULAR FOR A BIOFUEL CELL 有权
    住房，特别是生物燃料电池

    公开(公告)号：US20130273440A1

    公开(公告)日：2013-10-17

    申请号：US13993634

    申请日：2011-12-12

    Applicant: Pascale Mazoyer ,  Aomar Halimaoui

    Inventor： Pascale Mazoyer ,  Aomar Halimaoui

    IPC: H01M8/16 ,  H05K5/02

    CPC classification number: H01M8/16 ,  H01G11/52 ,  H01G11/78 ,  H01M8/1097 ,  H05K5/02 ,  Y02E60/13 ,  Y02E60/521 ,  Y02E60/527

    Abstract: A housing includes a body with a first silicon element and a second porous silicon element, at least one first cavity provided in the porous silicon element, a first electrically conducting contact area electrically coupled to at least a portion of at least one internal wall of the at least one first cavity, and a second electrically conducting contact area electrically coupled to a different portion of the at least one internal wall of the second porous silicon element of the at least one first cavity, wherein the two contact areas are electrically isolated from each other.

    Abstract translation: 壳体包括具有第一硅元件和第二多孔硅元件的主体，设置在多孔硅元件中的至少一个第一空腔，第一导电接触区域，电耦合到至少一个内壁的至少一部分 至少一个第一空腔和第二导电接触区域，其电耦合到所述至少一个第一空腔的所述第二多孔硅元件的所述至少一个内壁的不同部分，其中所述两个接触区域与所述至少一个第一空腔电绝缘 其他。

    MODULE ELEMENT, IN PARTICULAR FOR A BIOFUEL CELL, AND MANUFACTURING PROCESS
    17.
    发明申请
    MODULE ELEMENT, IN PARTICULAR FOR A BIOFUEL CELL, AND MANUFACTURING PROCESS 审中-公开
    模块元件，特别是生物燃料电池和制造工艺

    公开(公告)号：US20120225326A1

    公开(公告)日：2012-09-06

    申请号：US13406749

    申请日：2012-02-28

    Applicant: Richard Fournel ,  Aomar Halimaoui

    Inventor： Richard Fournel ,  Aomar Halimaoui

    IPC: H01M8/16 ,  B05D5/12 ,  H01M8/00

    CPC classification number: H01M8/16 ,  H01M8/1097 ,  Y02E60/527 ,  Y02P70/56

    Abstract: A module of a biofuel cell includes three module elements each having a porous membrane. At least two of the porous membranes are electrically conducting and form the cathode and the anode of the biofuel cell. The third membrane, which is preferably positioned between the two electrically conducting membranes need not be conducting, but defines two emergent cavities within the module. A porous through-channel extends through a silicon support of the module so as to connect one of the emergent cavities to at least one external wall of the silicon support.

    Abstract translation: 生物燃料电池的模块包括具有多孔膜的三个模块元件。 至少两个多孔膜是导电的并且形成生物燃料电池的阴极和阳极。 优选地位于两个导电膜之间的第三膜不需要导电，而是限定模块内的两个出射腔。 多孔通道延伸穿过模块的硅支撑件，以便将一个出射空腔连接到硅支撑体的至少一个外壁。

    Method for forming a localized region of a material difficult to etch
    19.
    发明授权
    Method for forming a localized region of a material difficult to etch 有权

    公开(公告)号：US06969661B2

    公开(公告)日：2005-11-29

    申请号：US10744680

    申请日：2003-12-23

    Applicant: Aomar Halimaoui ,  Daniel Bensahel

    Inventor： Aomar Halimaoui ,  Daniel Bensahel

    IPC: H01L21/28 ,  H01L21/316 ,  H01L21/336 ,  H01L29/51 ,  H01L21/3205

    CPC classification number: H01L21/28194 ,  H01L21/31604 ,  H01L21/31691 ,  H01L29/517 ,  H01L29/66583

    Abstract: A method for forming, in an integrated circuit, a localized region of a material difficult to etch, including the steps of forming a first silicon oxide layer having a thickness smaller than 1 nm on a silicon substrate; depositing, on the first layer, a second layer selectively etchable with respect to the first layer; forming in the second layer an opening according to the pattern of said localized region; selectively growing on the second layer, around the opening, a germanium layer, the material of the second layer being chosen to enable this selective growth, whereby there exists in the germanium an opening conformable with the above opening; depositing the material difficult to etch so that it does not deposit on the germanium; depositing a conductive layer to fill the opening in the germanium; performing a leveling to expose the germanium; and removing the germanium and the first and second layers.

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