公开(公告)号：US11521935B2

公开(公告)日：2022-12-06

申请号：US17227811

申请日：2021-04-12

Applicant: Applied Materials, Inc.

Inventor： Han-Wen Chen ,  Steven Verhaverbeke ,  Giback Park ,  Giorgio Cellere ,  Diego Tonini ,  Vincent Dicaprio ,  Kyuil Cho

IPC: H01L23/495 ,  H01L23/538 ,  H01L21/48 ,  H01L23/13 ,  H01L23/14 ,  H01L23/498 ,  H01L25/10 ,  H01L23/66 ,  H01Q1/22 ,  H01Q1/24 ,  H05K1/02 ,  H01L21/50 ,  H01L21/768 ,  H01L25/065 ,  H01L27/06 ,  H01L21/60

Abstract: The present disclosure relates to methods and apparatus for forming a thin-form-factor semiconductor package. In one embodiment, a glass or silicon substrate is structured by micro-blasting or laser ablation to form structures for formation of interconnections therethrough. The substrate is thereafter utilized as a frame for forming a semiconductor package with embedded dies therein.

公开(公告)号：US20220071023A1

公开(公告)日：2022-03-03

申请号：US17005954

申请日：2020-08-28

Applicant: Applied Materials, Inc.

Inventor： Tapash Chakraborty ,  Steven Verhaverbeke ,  Han-Wen Chen ,  Chintan Buch ,  Prerna Goradia ,  Giback Park ,  Kyuil Cho

IPC: H05K3/38 ,  H05K3/00 ,  B32B7/12 ,  B32B15/08

Abstract: Methods for forming circuit boards and circuit boards using an adhesion layer are described. A substrate with two surfaces is exposed to a bifunctional organic compound to form an adhesion layer on the first substrate surface. A resin layer is then deposited on the adhesion layer and the exposed substrate surfaces. Portions of the resin layer may be removed to expose metal pads for contacts.

公开(公告)号：US11264333B2

公开(公告)日：2022-03-01

申请号：US16870843

申请日：2020-05-08

Applicant: Applied Materials, Inc.

Inventor： Han-Wen Chen ,  Steven Verhaverbeke ,  Guan Huei See ,  Giback Park ,  Giorgio Cellere ,  Diego Tonini ,  Vincent Dicaprio ,  Kyuil Cho

IPC: H01L23/538 ,  H01L21/48 ,  H01L23/13 ,  H01L23/14 ,  H01L23/498 ,  H01L25/10 ,  H01L23/66 ,  H01Q1/22 ,  H01Q1/24 ,  H05K1/02 ,  H01L21/50 ,  H01L21/768 ,  H01L25/065 ,  H01L27/06 ,  H01L21/60

Abstract: The present disclosure relates to thin-form-factor reconstituted substrates and methods for forming the same. The reconstituted substrates described herein may be utilized to fabricate homogeneous or heterogeneous high-density 3D integrated devices. In one embodiment, a silicon substrate is structured by direct laser patterning to include one or more cavities and one or more vias. One or more semiconductor dies of the same or different types may be placed within the cavities and thereafter embedded in the substrate upon formation of an insulating layer thereon. One or more conductive interconnections are formed in the vias and may have contact points redistributed to desired surfaces of the reconstituted substrate. The reconstituted substrate may thereafter be integrated into a stacked 3D device.

公开(公告)号：US20220028942A1

公开(公告)日：2022-01-27

申请号：US17494600

申请日：2021-10-05

Applicant: Applied Materials, Inc.

Inventor： Kyuil Cho ,  Byung Sung Kwak ,  Robert Jan Visser

IPC: H01L27/32

Abstract: A display device includes a display layer having a plurality of light-emitting diodes and an encapsulation layer covering a light-emitting side of the display layer. The encapsulation layer includes a plurality of first polymer projections on display layer, the plurality of first polymer projections having spaces therebetween, and a first dielectric layer conformally covering the plurality of first polymer projections and any exposed underlying surface in the spaces between the first polymer projections, the dielectric layer forming side walls along sides of the first polymer projections and defining wells in spaces between the side walls.

公开(公告)号：US10937726B1

公开(公告)日：2021-03-02

申请号：US16746681

申请日：2020-01-17

Applicant: Applied Materials, Inc.

Inventor： Han-Wen Chen ,  Steven Verhaverbeke ,  Giback Park ,  Kyuil Cho ,  Kurtis Leschkies ,  Roman Gouk ,  Chintan Buch ,  Vincent DiCaprio

IPC: H01L23/498 ,  H01L23/14 ,  H01L21/48

Abstract: The present disclosure relates to semiconductor core assemblies and methods of forming the same. The semiconductor core assemblies described herein may be utilized to form semiconductor package assemblies, PCB assemblies, PCB spacer assemblies, chip carrier assemblies, intermediate carrier assemblies (e.g., for graphics cards), and the like. In one embodiment, a silicon substrate core is structured by direct laser patterning. One or more conductive interconnections are formed in the substrate core and one or more redistribution layers are formed on surfaces thereof. The silicon substrate core may thereafter be utilized as a core structure for a semiconductor package, PCB, PCB spacer, chip carrier, intermediate carrier, or the like.

公开(公告)号：US12087679B2

公开(公告)日：2024-09-10

申请号：US16886704

申请日：2020-05-28

Applicant: Applied Materials, Inc.

Inventor： Han-Wen Chen ,  Steven Verhaverbeke ,  Giback Park ,  Kyuil Cho ,  Kurtis Leschkies ,  Roman Gouk ,  Chintan Buch ,  Vincent Dicaprio ,  Bernhard Stonas ,  Jean Delmas

IPC: H01L23/498 ,  H01L21/48 ,  H01L23/14

CPC classification number: H01L23/49838 ,  H01L21/486 ,  H01L23/147 ,  H01L23/49827 ,  H01L23/49866

Abstract: The present disclosure relates to semiconductor core assemblies and methods of forming the same. The semiconductor core assemblies described herein may be utilized to form semiconductor package assemblies, PCB assemblies, PCB spacer assemblies, chip carrier assemblies, intermediate carrier assemblies (e.g., for graphics cards), and the like. In one embodiment, a silicon substrate core is structured by direct laser patterning. One or more conductive interconnections are formed in the substrate core and one or more redistribution layers are formed on surfaces thereof. The silicon substrate core may thereafter be utilized as a core structure for a semiconductor package, PCB, PCB spacer, chip carrier, intermediate carrier, or the like.

公开(公告)号：US11881447B2

公开(公告)日：2024-01-23

申请号：US17227867

申请日：2021-04-12

Applicant: Applied Materials, Inc.

Inventor： Han-Wen Chen ,  Steven Verhaverbeke ,  Giback Park ,  Kyuil Cho ,  Kurtis Leschkies ,  Roman Gouk ,  Chintan Buch ,  Vincent Dicaprio ,  Bernhard Stonas ,  Jean Delmas

IPC: H01L23/538 ,  H01L23/367 ,  H01L23/498 ,  H01L21/48 ,  H01L23/14

CPC classification number: H01L23/49838 ,  H01L21/486 ,  H01L23/147 ,  H01L23/49827 ,  H01L23/49866

Abstract: The present disclosure relates to semiconductor core assemblies and methods of forming the same. The semiconductor core assemblies described herein may be utilized to form semiconductor package assemblies, PCB assemblies, PCB spacer assemblies, chip carrier assemblies, intermediate carrier assemblies (e.g., for graphics cards), and the like. In one embodiment, a silicon substrate core is structured by direct laser patterning. One or more conductive interconnections are formed in the substrate core and one or more redistribution layers are formed on surfaces thereof. The silicon substrate core may thereafter be utilized as a core structure for a semiconductor package, PCB, PCB spacer, chip carrier, intermediate carrier, or the like.

公开(公告)号：US11798831B2

公开(公告)日：2023-10-24

申请号：US17735018

申请日：2022-05-02

Applicant: Applied Materials, Inc.

Inventor： Daihua Zhang ,  Hou T. Ng ,  Nag B. Patibandla ,  Sivapackia Ganapathiappan ,  Yingdong Luo ,  Kyuil Cho ,  Han-Wen Chen

IPC: H01L21/68 ,  H01L21/67 ,  H01L21/02

CPC classification number: H01L21/68 ,  H01L21/02288 ,  H01L21/6715

Abstract: A method for printing on a substrate includes printing a support structure by printing a liquid precursor material and curing the liquid precursor material, positioning a substrate within the support structure, printing one or more anchors on the substrate and the support structure by printing and curing the liquid precursor material to secure the substrate to the support structure, and printing one or more device structures on the substrate while anchored by printing and curing the liquid precursor material.

公开(公告)号：US11705365B2

公开(公告)日：2023-07-18

申请号：US17323381

申请日：2021-05-18

Applicant: Applied Materials, Inc.

Inventor： Wei-Sheng Lei ,  Kurtis Leschkies ,  Roman Gouk ,  Giback Park ,  Kyuil Cho ,  Tapash Chakraborty ,  Han-Wen Chen ,  Steven Verhaverbeke

IPC: H01L21/768 ,  H01L21/48

CPC classification number: H01L21/76825 ,  H01L21/486 ,  H01L21/76877

Abstract: The present disclosure relates to micro-via structures for interconnects in advanced wafer level semiconductor packaging. The methods described herein enable the formation of high-quality, low-aspect-ratio micro-via structures with improved uniformity, thus facilitating thin and small-form-factor semiconductor devices having high I/O density with improved bandwidth and power.

公开(公告)号：US20220336246A1

公开(公告)日：2022-10-20

申请号：US17735018

申请日：2022-05-02

Applicant: Applied Materials, Inc.

Inventor： Daihua Zhang ,  Hou T. Ng ,  Nag B. Patibandla ,  Sivapackia Ganapathiappan ,  Yingdong Luo ,  Kyuil Cho ,  Han-Wen Chen

IPC: H01L21/68 ,  H01L21/67 ,  H01L21/02

Abstract: A method for printing on a substrate includes printing a support structure by printing a liquid precursor material and curing the liquid precursor material, positioning a substrate within the support structure, printing one or more anchors on the substrate and the support structure by printing and curing the liquid precursor material to secure the substrate to the support structure, and printing one or more device structures on the substrate while anchored by printing and curing the liquid precursor material.