公开(公告)号：US20200243341A1

公开(公告)日：2020-07-30

申请号：US16835279

申请日：2020-03-30

Applicant: Applied Materials, Inc.

Inventor： Yong Wu ,  Wei V. Tang ,  Jianqiu Guo ,  Wenyi Liu ,  Yixiong Yang ,  Jacqueline S. Wrench ,  Mandyam Sriram ,  Srinivas Gandikota ,  Yumin He

IPC: H01L21/285 ,  H01L21/02 ,  H01L21/768 ,  H01L21/3205

Abstract: In-situ methods for depositing a metal film without the use of a barrier layer are disclosed. Some embodiments comprise forming an amorphous nucleation layer comprising one or more of silicon or boron and forming a metal layer on the nucleation layer. These processes are performed without an air break between processes.

公开(公告)号：US20190228982A1

公开(公告)日：2019-07-25

申请号：US16246711

申请日：2019-01-14

Applicant: Applied Materials, Inc.

Inventor： Yihong Chen ,  Rui Cheng ,  Pramit Manna ,  Abhijit Basu Mallick ,  Shishi Jiang ,  Yong Wu ,  Kurtis Leschkies ,  Srinivas Gandikota

IPC: H01L21/3105 ,  C23C16/56 ,  H01L21/02

Abstract: Aspects of the disclosure include methods of processing a substrate. The method includes depositing a conformal layer on a substrate which contains seams. The substrate is treated using a high pressure anneal in the presence of an oxidizer.

公开(公告)号：US20230005945A1

公开(公告)日：2023-01-05

申请号：US17941421

申请日：2022-09-09

Applicant: Applied Materials, Inc.

Inventor： Jacqueline S. Wrench ,  Yixiong Yang ,  Yong Wu ,  Wei V. Tang ,  Srinivas Gandikota ,  Yongjing Lin ,  Karla M Bernal Ramos ,  Shih Chung Chen

IPC: H01L27/11556 ,  H01L21/285 ,  H01L21/67 ,  H01L21/28 ,  C23C16/06 ,  H01L21/311 ,  C23C16/50 ,  C23C16/455 ,  H01L29/423

Abstract: Methods of forming memory structures are discussed. Specifically, methods of forming 3D NAND devices are discussed. Some embodiments form memory structures with a metal nitride barrier layer, an α-tungsten layer, and a bulk metal material. The barrier layer comprises a TiXN or TaXN material, where X comprises a metal selected from one or more of aluminum (Al), silicon (Si), tungsten (W), lanthanum (La), yttrium (Yt), strontium (Sr), or magnesium (Mg).

公开(公告)号：US10854461B2

公开(公告)日：2020-12-01

申请号：US16588235

申请日：2019-09-30

Applicant: Applied Materials, Inc.

Inventor： Yihong Chen ,  Yong Wu ,  Chia Cheng Chin ,  Srinivas Gandikota ,  Kelvin Chan

IPC: H01L21/285 ,  H01L21/02 ,  H01L21/768 ,  H01L21/3205

Abstract: Methods for depositing a metal film without the use of a barrier layer are disclosed. Some embodiments comprise forming an amorphous nucleation layer comprising one or more of silicon or boron and forming a metal layer on the nucleation layer.

公开(公告)号：US20200051920A1

公开(公告)日：2020-02-13

申请号：US16536603

申请日：2019-08-09

Applicant: Applied Materials, Inc.

Inventor： Yong Wu ,  Srinivas Gandikota ,  Abhijit Basu Mallick ,  Srinivas D. Nemani

IPC: H01L23/532 ,  H01L21/285 ,  H01L21/768 ,  H01L21/3205 ,  C23C16/455 ,  C23C16/26

Abstract: A graphene barrier layer is disclosed. Some embodiments relate to a graphene barrier layer capable of preventing diffusion from a fill layer into a substrate surface and/or vice versa. Some embodiments relate to a graphene barrier layer that prevents diffusion of fluorine from a tungsten layer into the underlying substrate. Additional embodiments relate to electronic devices which contain a graphene barrier layer.

公开(公告)号：US10468263B2

公开(公告)日：2019-11-05

申请号：US15961363

申请日：2018-04-24

Applicant: Applied Materials, Inc.

Inventor： Yihong Chen ,  Yong Wu ,  Chia Cheng Chin ,  Srinivas Gandikota

IPC: H01L21/02 ,  H01L21/285

Abstract: Methods for depositing a metal film without the use of a barrier layer are disclosed. Some embodiments comprise forming an amorphous nucleation layer comprising one or more of silicon or boron and forming a metal layer on the nucleation layer.

公开(公告)号：US20180358264A1

公开(公告)日：2018-12-13

申请号：US16006402

申请日：2018-06-12

Applicant: Applied Materials, Inc

Inventor： Yong Wu ,  Yihong Chen ,  Shishi Jiang ,  Ziqing Duan ,  Abhijit Basu Mallick ,  Srinivas Gandikota

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/285

Abstract: Methods for filling a substrate feature with a seamless tungsten fill are described. The methods include depositing a tungsten film, oxidizing the tungsten film to a tungsten oxide pillar, reducing the tungsten oxide film to a seamless tungsten gapfill and optionally depositing additional tungsten on the tungsten gapfill.

公开(公告)号：US20220172989A1

公开(公告)日：2022-06-02

申请号：US17672296

申请日：2022-02-15

Applicant: Applied Materials, Inc.

Inventor： Yihong Chen ,  Kelvin Chan ,  Xinliang Lu ,  Srinivas Gandikota ,  Yong Wu ,  Susmit Singha Roy ,  Chia Cheng Chin

IPC: H01L21/768 ,  C23C16/02 ,  C23C16/455 ,  C23C16/458 ,  H01L21/285 ,  H01L21/687 ,  H01L23/532

Abstract: Processing methods comprise forming a gap fill layer comprising tungsten or molybdenum by exposing a substrate surface having at least one feature thereon sequentially to a metal precursor and a reducing agent comprising hydrogen to form the gap fill layer in the feature, wherein there is not a nucleation layer between the substrate surface and the gap fill layer.

公开(公告)号：US20210167021A1

公开(公告)日：2021-06-03

申请号：US17171432

申请日：2021-02-09

Applicant: Applied Materials, Inc.

Inventor： Yong Wu ,  Srinivas Gandikota ,  Abhijit Basu Mallick ,  Srinivas D. Nemani

IPC: H01L23/532 ,  H01L21/768 ,  C23C16/455 ,  C23C16/26 ,  H01L21/285 ,  H01L21/3205 ,  H01L27/115

Abstract: A graphene barrier layer is disclosed. Some embodiments relate to a graphene barrier layer capable of preventing diffusion from a fill layer into a substrate surface and/or vice versa. Some embodiments relate to a graphene barrier layer that prevents diffusion of fluorine from a tungsten layer into the underlying substrate. Additional embodiments relate to electronic devices which contain a graphene barrier layer.

公开(公告)号：US10916505B2

公开(公告)日：2021-02-09

申请号：US16536603

申请日：2019-08-09

Applicant: Applied Materials, Inc.

Inventor： Yong Wu ,  Srinivas Gandikota ,  Abhijit Basu Mallick ,  Srinivas D. Nemani

IPC: H01L23/532 ,  H01L21/285 ,  H01L21/768 ,  C23C16/455 ,  C23C16/26 ,  H01L21/3205 ,  H01L27/115

Abstract: A graphene barrier layer is disclosed. Some embodiments relate to a graphene barrier layer capable of preventing diffusion from a fill layer into a substrate surface and/or vice versa. Some embodiments relate to a graphene barrier layer that prevents diffusion of fluorine from a tungsten layer into the underlying substrate. Additional embodiments relate to electronic devices which contain a graphene barrier layer.