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公开(公告)号:US20200243341A1
公开(公告)日:2020-07-30
申请号:US16835279
申请日:2020-03-30
Applicant: Applied Materials, Inc.
Inventor: Yong Wu , Wei V. Tang , Jianqiu Guo , Wenyi Liu , Yixiong Yang , Jacqueline S. Wrench , Mandyam Sriram , Srinivas Gandikota , Yumin He
IPC: H01L21/285 , H01L21/02 , H01L21/768 , H01L21/3205
Abstract: In-situ methods for depositing a metal film without the use of a barrier layer are disclosed. Some embodiments comprise forming an amorphous nucleation layer comprising one or more of silicon or boron and forming a metal layer on the nucleation layer. These processes are performed without an air break between processes.
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公开(公告)号:US20190228982A1
公开(公告)日:2019-07-25
申请号:US16246711
申请日:2019-01-14
Applicant: Applied Materials, Inc.
Inventor: Yihong Chen , Rui Cheng , Pramit Manna , Abhijit Basu Mallick , Shishi Jiang , Yong Wu , Kurtis Leschkies , Srinivas Gandikota
IPC: H01L21/3105 , C23C16/56 , H01L21/02
Abstract: Aspects of the disclosure include methods of processing a substrate. The method includes depositing a conformal layer on a substrate which contains seams. The substrate is treated using a high pressure anneal in the presence of an oxidizer.
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公开(公告)号:US20230005945A1
公开(公告)日:2023-01-05
申请号:US17941421
申请日:2022-09-09
Applicant: Applied Materials, Inc.
Inventor: Jacqueline S. Wrench , Yixiong Yang , Yong Wu , Wei V. Tang , Srinivas Gandikota , Yongjing Lin , Karla M Bernal Ramos , Shih Chung Chen
IPC: H01L27/11556 , H01L21/285 , H01L21/67 , H01L21/28 , C23C16/06 , H01L21/311 , C23C16/50 , C23C16/455 , H01L29/423
Abstract: Methods of forming memory structures are discussed. Specifically, methods of forming 3D NAND devices are discussed. Some embodiments form memory structures with a metal nitride barrier layer, an α-tungsten layer, and a bulk metal material. The barrier layer comprises a TiXN or TaXN material, where X comprises a metal selected from one or more of aluminum (Al), silicon (Si), tungsten (W), lanthanum (La), yttrium (Yt), strontium (Sr), or magnesium (Mg).
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公开(公告)号:US10854461B2
公开(公告)日:2020-12-01
申请号:US16588235
申请日:2019-09-30
Applicant: Applied Materials, Inc.
Inventor: Yihong Chen , Yong Wu , Chia Cheng Chin , Srinivas Gandikota , Kelvin Chan
IPC: H01L21/285 , H01L21/02 , H01L21/768 , H01L21/3205
Abstract: Methods for depositing a metal film without the use of a barrier layer are disclosed. Some embodiments comprise forming an amorphous nucleation layer comprising one or more of silicon or boron and forming a metal layer on the nucleation layer.
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公开(公告)号:US20200051920A1
公开(公告)日:2020-02-13
申请号:US16536603
申请日:2019-08-09
Applicant: Applied Materials, Inc.
Inventor: Yong Wu , Srinivas Gandikota , Abhijit Basu Mallick , Srinivas D. Nemani
IPC: H01L23/532 , H01L21/285 , H01L21/768 , H01L21/3205 , C23C16/455 , C23C16/26
Abstract: A graphene barrier layer is disclosed. Some embodiments relate to a graphene barrier layer capable of preventing diffusion from a fill layer into a substrate surface and/or vice versa. Some embodiments relate to a graphene barrier layer that prevents diffusion of fluorine from a tungsten layer into the underlying substrate. Additional embodiments relate to electronic devices which contain a graphene barrier layer.
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公开(公告)号:US10468263B2
公开(公告)日:2019-11-05
申请号:US15961363
申请日:2018-04-24
Applicant: Applied Materials, Inc.
Inventor: Yihong Chen , Yong Wu , Chia Cheng Chin , Srinivas Gandikota
IPC: H01L21/02 , H01L21/285
Abstract: Methods for depositing a metal film without the use of a barrier layer are disclosed. Some embodiments comprise forming an amorphous nucleation layer comprising one or more of silicon or boron and forming a metal layer on the nucleation layer.
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公开(公告)号:US20180358264A1
公开(公告)日:2018-12-13
申请号:US16006402
申请日:2018-06-12
Applicant: Applied Materials, Inc
Inventor: Yong Wu , Yihong Chen , Shishi Jiang , Ziqing Duan , Abhijit Basu Mallick , Srinivas Gandikota
IPC: H01L21/768 , H01L21/02 , H01L21/285
Abstract: Methods for filling a substrate feature with a seamless tungsten fill are described. The methods include depositing a tungsten film, oxidizing the tungsten film to a tungsten oxide pillar, reducing the tungsten oxide film to a seamless tungsten gapfill and optionally depositing additional tungsten on the tungsten gapfill.
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公开(公告)号:US20220172989A1
公开(公告)日:2022-06-02
申请号:US17672296
申请日:2022-02-15
Applicant: Applied Materials, Inc.
Inventor: Yihong Chen , Kelvin Chan , Xinliang Lu , Srinivas Gandikota , Yong Wu , Susmit Singha Roy , Chia Cheng Chin
IPC: H01L21/768 , C23C16/02 , C23C16/455 , C23C16/458 , H01L21/285 , H01L21/687 , H01L23/532
Abstract: Processing methods comprise forming a gap fill layer comprising tungsten or molybdenum by exposing a substrate surface having at least one feature thereon sequentially to a metal precursor and a reducing agent comprising hydrogen to form the gap fill layer in the feature, wherein there is not a nucleation layer between the substrate surface and the gap fill layer.
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公开(公告)号:US20210167021A1
公开(公告)日:2021-06-03
申请号:US17171432
申请日:2021-02-09
Applicant: Applied Materials, Inc.
Inventor: Yong Wu , Srinivas Gandikota , Abhijit Basu Mallick , Srinivas D. Nemani
IPC: H01L23/532 , H01L21/768 , C23C16/455 , C23C16/26 , H01L21/285 , H01L21/3205 , H01L27/115
Abstract: A graphene barrier layer is disclosed. Some embodiments relate to a graphene barrier layer capable of preventing diffusion from a fill layer into a substrate surface and/or vice versa. Some embodiments relate to a graphene barrier layer that prevents diffusion of fluorine from a tungsten layer into the underlying substrate. Additional embodiments relate to electronic devices which contain a graphene barrier layer.
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公开(公告)号:US10916505B2
公开(公告)日:2021-02-09
申请号:US16536603
申请日:2019-08-09
Applicant: Applied Materials, Inc.
Inventor: Yong Wu , Srinivas Gandikota , Abhijit Basu Mallick , Srinivas D. Nemani
IPC: H01L23/532 , H01L21/285 , H01L21/768 , C23C16/455 , C23C16/26 , H01L21/3205 , H01L27/115
Abstract: A graphene barrier layer is disclosed. Some embodiments relate to a graphene barrier layer capable of preventing diffusion from a fill layer into a substrate surface and/or vice versa. Some embodiments relate to a graphene barrier layer that prevents diffusion of fluorine from a tungsten layer into the underlying substrate. Additional embodiments relate to electronic devices which contain a graphene barrier layer.
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