公开(公告)号：US20200243303A1

公开(公告)日：2020-07-30

申请号：US16355153

申请日：2019-03-15

Applicant: Applied Materials, Inc.

Inventor： Anurag Kumar MISHRA ,  James ROGERS ,  Leonid DORF ,  Rajinder DHINDSA ,  Olivier LUERE

IPC: H01J37/32 ,  H01L21/683

Abstract: Embodiments described herein are applicable for use in all types of plasma assisted or plasma enhanced processing chambers and also for methods of plasma assisted or plasma enhanced processing of a substrate. More specifically, embodiments of this disclosure include a broadband filter assembly, also referred to herein as a filter assembly, that is configured to reduce and/or prevent RF leakage currents from being transferred from one or more RF driven components to a ground through other electrical components that are directly or indirectly electrically coupled to the RF driven components and ground with high input impedance (low current loss) making it compatible with shaped DC pulse bias applications.

公开(公告)号：US20240030002A1

公开(公告)日：2024-01-25

申请号：US18375886

申请日：2023-10-02

Applicant: Applied Materials, Inc.

Inventor： Leonid DORF ,  Rajinder DHINDSA ,  James ROGERS ,  Daniel Sang BYUN ,  Evgeny KAMENETSKIY ,  Yue GUO ,  Kartik RAMASWAMY ,  Valentin N. TODOROW ,  Olivier LUERE ,  Linying CUI

IPC: H01J37/32 ,  H01L21/311 ,  H01L21/3065 ,  H01L21/683

CPC classification number: H01J37/32128 ,  H01J37/32146 ,  H01J37/32183 ,  H01L21/31116 ,  H01J37/32577 ,  H01J37/32568 ,  H01J37/32174 ,  H01J37/32715 ,  H01L21/3065 ,  H01L21/6831 ,  H01J2237/3321 ,  H01J2237/3341 ,  H01J2237/2007

Abstract: Embodiments of the disclosure provided herein include an apparatus and method for the plasma processing of a substrate in a processing chamber. More specifically, embodiments of this disclosure describe a biasing scheme that is configured to provide a pulsed-voltage (PV) waveform delivered from one or more pulsed-voltage (PV) generators to the one or more electrodes within the processing chamber. The plasma process(es) disclosed herein can be used to control the shape of an ion energy distribution function (IEDF) and the interaction of the plasma with a surface of a substrate during plasma processing.

公开(公告)号：US20220037119A1

公开(公告)日：2022-02-03

申请号：US17315256

申请日：2021-05-07

Applicant: Applied Materials, Inc.

Inventor： Leonid DORF ,  Rajinder DHINDSA ,  James ROGERS ,  Daniel Sang BYUN ,  Evgeny KAMENETSKIY ,  Yue GUO ,  Kartik RAMASWAMY ,  Valentin N. TODOROW ,  Olivier LUERE ,  Linying Cui

IPC: H01J37/32

Abstract: Embodiments of the disclosure provided herein include an apparatus and method for the plasma processing of a substrate in a processing chamber. More specifically, embodiments of this disclosure describe a biasing scheme that is configured to provide a radio frequency (RF) generated RF waveform from an RF generator to one or more electrodes within a processing chamber and a pulsed-voltage (PV) waveform delivered from one or more pulsed-voltage (PV) generators to the one or more electrodes within the processing chamber. The plasma process(es) disclosed herein can be used to control the shape of an ion energy distribution function (IEDF) and the interaction of the plasma with a surface of a substrate during plasma processing.

公开(公告)号：US20210193438A1

公开(公告)日：2021-06-24

申请号：US17127838

申请日：2020-12-18

Applicant: APPLIED MATERIALS, INC.

Inventor： Leonid DORF ,  Rajinder DHINDSA ,  Olivier LUERE ,  Evgeny KAMENETSKIY

IPC: H01J37/32 ,  H05H1/46

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, an apparatus can be a controller for a high peak power radio frequency (RF) generator. The controller comprises a control logic circuit in operable communication with an RF generator operating in a burst mode, the control logic circuit configured to receive a power, P, request at a predetermined duty cycle, δ, from a plasma processing chamber, determine a peak maximum power, Ppeakmax, based on a maximum average power, Pavgmax, and a maximum absolute power, Pabsmax, of the RF generator and the predetermined duty cycle, and transmit a control signal to the RF generator to limit a peak power, Ppeak, to the plasma processing chamber based on the Ppeakmax.

公开(公告)号：US20200234923A1

公开(公告)日：2020-07-23

申请号：US16790143

申请日：2020-02-13

Applicant: Applied Materials, Inc.

Inventor： Leonid DORF ,  Evgeny KAMENETSKIY ,  James ROGERS ,  Olivier LUERE ,  Rajinder DHINDSA ,  Viacheslav PLOTNIKOV

IPC: H01J37/32 ,  H01L21/311

Abstract: Embodiments of this disclosure describe a feedback loop that can be used to maintain a nearly constant sheath voltage and thus creating a mono-energetic IEDF at the surface of the substrate. The system described herein consequently enables a precise control over the shape of IEDF and the profile of the features formed in the surface of the substrate.

公开(公告)号：US20180315583A1

公开(公告)日：2018-11-01

申请号：US16026853

申请日：2018-07-03

Applicant: Applied Materials, Inc.

Inventor： Olivier LUERE ,  Leonid DORF ,  Rajinder DHINDSA ,  Sunil SRINIVASAN ,  Denis M. KOOSAU ,  James ROGERS

IPC: H01J37/32

CPC classification number: H01J37/32642 ,  H01J37/32082 ,  H01J37/32449 ,  H01J37/32513 ,  H01J37/32522 ,  H01J2237/006 ,  H01J2237/334

Abstract: Embodiments described herein generally related to a substrate processing apparatus. In one embodiment, a process kit for a substrate processing chamber disclosed herein. The process kit includes an edge ring having a top surface and a bottom surface. An adjustable tuning ring is positioned beneath the bottom surface of the edge ring. The adjustable tuning ring has an upper surface and a lower surface. The lower surface is configured to interface with an actuating mechanism configured to move the adjustable tuning ring relative to the edge ring.

公开(公告)号：US20180233334A1

公开(公告)日：2018-08-16

申请号：US15951540

申请日：2018-04-12

Applicant: Applied Materials, Inc.

Inventor： Olivier LUERE ,  Leonid DORF ,  Rajinder DHINDSA ,  Sunil SRINIVASAN ,  Denis M. KOOSAU ,  James ROGERS

IPC: H01J37/32

CPC classification number: H01J37/32642 ,  H01J37/32082 ,  H01J37/32449 ,  H01J37/32513 ,  H01J37/32522 ,  H01J2237/006 ,  H01J2237/334

Abstract: Embodiments described herein generally related to a substrate processing apparatus. In one embodiment, a process kit for a substrate processing chamber disclosed herein. The process kit includes a first ring having a top surface and a bottom surface, an adjustable tuning ring having a top surface and a bottom surface, and an actuating mechanism. The bottom surface is supported by a substrate support member. The bottom surface at least partially extends beneath a substrate supported by the substrate support member. The adjustable tuning ring is positioned beneath the first ring. The top surface of the adjustable tuning ring and the first ring define an adjustable gap. The actuating mechanism is interfaced with the bottom surface of the adjustable tuning ring. The actuating mechanism is configured to alter the adjustable gap defined between the bottom surface of the first ring and the top surface of the adjustable tuning ring.

公开(公告)号：US20230326717A1

公开(公告)日：2023-10-12

申请号：US18201358

申请日：2023-05-24

Applicant: Applied Materials, Inc.

Inventor： Leonid DORF ,  Evgeny KAMENETSKIY ,  James ROGERS ,  Olivier LUERE ,  Rajinder DHINDSA ,  Viacheslav PLOTNIKOV

IPC: H01L21/311 ,  H01J37/32

CPC classification number: H01J37/32128 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32174 ,  H01J37/3299 ,  H01L21/31116 ,  H01L21/6831

Abstract: Embodiments of this disclosure describe a feedback loop that can be used to maintain a nearly constant sheath voltage and thus creating a mono-energetic IEDF at the surface of the substrate. The system described herein consequently enables a precise control over the shape of IEDF and the profile of the features formed in the surface of the substrate.

公开(公告)号：US20220367158A1

公开(公告)日：2022-11-17

申请号：US17319013

申请日：2021-05-12

Applicant: Applied Materials, Inc.

Inventor： Linying CUI ,  James ROGERS ,  Leonid DORF

IPC: H01J37/32 ,  H01L21/683

Abstract: Embodiments of the present disclosure relate to a system for pulsed direct-current (DC) biasing and clamping a substrate. In one embodiment, the system includes a plasma chamber having an electrostatic chuck (ESC) for supporting a substrate. An electrode is embedded in the ESC and is electrically coupled to a biasing and clamping network. The biasing and clamping network includes at least a shaped DC pulse voltage source and a clamping network. The clamping network includes a DC source and a diode, and a resistor. The shaped DC pulse voltage source and the clamping network are connected in parallel. The biasing and clamping network automatically maintains a substantially constant clamping voltage, which is a voltage drop across the electrode and the substrate when the substrate is biased with pulsed DC voltage, leading to improved clamping of the substrate.

公开(公告)号：US20220367157A1

公开(公告)日：2022-11-17

申请号：US17319007

申请日：2021-05-12

Applicant: Applied Materials, Inc.

Inventor： Linying CUI ,  James ROGERS ,  Leonid DORF

IPC: H01J37/32

Abstract: Embodiments of the present disclosure relate to a system for pulsed direct-current (DC) biasing and clamping a substrate. In one embodiment, the system includes a plasma chamber having an electrostatic chuck (ESC) for supporting a substrate. An electrode is embedded in the ESC and is electrically coupled to a biasing and clamping network. The biasing and clamping network includes at least a shaped DC pulse voltage source and a clamping network. The clamping network includes a DC source and a diode, and a resistor. The shaped DC pulse voltage source and the clamping network are connected in parallel. The biasing and clamping network automatically maintains a substantially constant clamping voltage, which is a voltage drop across the electrode and the substrate when the substrate is biased with pulsed DC voltage, leading to improved clamping of the substrate.