公开(公告)号：US08801896B2

公开(公告)日：2014-08-12

申请号：US13734532

申请日：2013-01-04

Applicant: Applied Materials, Inc.

Inventor： Valentin N. Todorow ,  John P. Holland ,  Michael D. Willwerth

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC classification number: C23F4/00 ,  C23F1/08 ,  H01J37/321 ,  H01J37/32633 ,  H01L21/67069

Abstract: A method and apparatus for etching a substrate using a spatially modified plasma is provided herein. In one embodiment, the method includes providing a process chamber having a plasma stabilizer disposed above a substrate support pedestal. A substrate is placed upon the pedestal. A process gas is introduced into the process chamber and a plasma is formed from the process gas. The substrate is etched with a plasma having an ion density to radical density ratio defined by the plasma stabilizer.

Abstract translation: 本文提供了使用空间修正等离子体蚀刻衬底的方法和设备。 在一个实施例中，该方法包括提供具有设置在基板支撑基座上方的等离子体稳定器的处理室。 将基板放置在基座上。 工艺气体被引入到处理室中，并且从处理气体形成等离子体。 用等离子体蚀刻衬底，该等离子体具有由等离子体稳定剂限定的离子密度与自由基密度比。

公开(公告)号：US20230343568A2

公开(公告)日：2023-10-26

申请号：US18071444

申请日：2022-11-29

Applicant: Applied Materials, Inc.

Inventor： Yaoling Pan ,  Patrick John Tae ,  Michael D. Willwerth ,  Leonard Tedeschi ,  Kiyki-Shiy N. Shang ,  Mikhail V. Taraboukhine ,  Charles R. Hardy ,  Sivasankar Nagarajan

IPC: H01J37/32 ,  G01N27/22

CPC classification number: H01J37/32935 ,  H01J37/32807 ,  H01J37/32926 ,  G01N27/228 ,  H01J37/32853 ,  H01J2237/24592 ,  H01J2237/24495 ,  H01J2237/24564

Abstract: Capacitive sensors and capacitive sensing data integration for plasma chamber condition monitoring are described. In an example, a plasma chamber monitoring system includes a plurality of capacitive sensors, a capacitance digital converter, and an applied process server coupled to the capacitance digital converter, the applied process server including a system software. The capacitance digital converter includes an isolation interface coupled to the plurality of capacitive sensors, a power supply coupled to the isolation interface, a field-programmable gate-array firmware coupled to the isolation interface, and an application-specific integrated circuit coupled to the field-programmable gate-array firmware.

公开(公告)号：US11551905B2

公开(公告)日：2023-01-10

申请号：US15925739

申请日：2018-03-19

Applicant: APPLIED MATERIALS, INC.

Inventor： Yaoling Pan ,  Vijaykumar Krithivasan ,  Shimin Mao ,  Kelvin Chan ,  Michael D. Willwerth ,  Anantha Subramani ,  Ashish Goel ,  Chih-shun Lu ,  Philip Allan Kraus ,  Patrick John Tae ,  Leonard Tedeschi

IPC: H01J37/244 ,  H01L21/67 ,  H01L41/047 ,  H01L41/053 ,  H01L41/29 ,  H01L41/04 ,  H01J37/32 ,  H01L41/31

Abstract: Embodiments described herein include a resonant process monitor and methods of forming such a resonant process monitor. In an embodiment, the resonant process monitor includes a frame that has a first opening and a second opening. In an embodiment, a resonant body seals the first opening of the frame. In an embodiment, a first electrode on a first surface of the resonant body contacts the frame and a second electrode is on a second surface of the resonant body. Embodiments also include a back plate that seals the second opening of the frame. In an embodiment the back plate is mechanically coupled to the frame, and the resonant body, the back plate, and interior surfaces of the frame define a cavity.

公开(公告)号：US11448977B1

公开(公告)日：2022-09-20

申请号：US17484605

申请日：2021-09-24

Applicant: Applied Materials, Inc.

Inventor： Kartik Ramaswamy ,  Michael D. Willwerth ,  Yang Yang

IPC: G03F7/20 ,  G03F7/42

Abstract: Apparatus for processing substrates can include a gas distribution plate that includes an upper plate and a lower plate and a solid disk between the upper plate and the lower plate. Each of the upper plate and the lower plate has a central region and an outer region surrounding the central region, the central region being solid and the outer region having a plurality of through holes. The upper plate and the lower plate are coaxially aligned along a central axis extending through a center of the central region of the upper plate and a center of the central region of the lower plate. The solid disk is coaxially aligned with the upper plate and the lower plate. The solid disk is configured to block transmission of ultraviolet radiation through the solid disk.

公开(公告)号：US11264252B2

公开(公告)日：2022-03-01

申请号：US16561907

申请日：2019-09-05

Applicant: Applied Materials, Inc.

Inventor： Michael D. Willwerth ,  Jeffrey Ludwig ,  Benjamin Schwarz ,  Roberto Cesar Cotlear

IPC: H01L21/67 ,  H01J37/32

Abstract: Implementations described herein provide a chamber lid assembly. In one embodiment, a chamber lid assembly includes a heater embedded in a dielectric body forming a boundary of a processing chamber, wherein the heater has one or more heating zones that are independently controlled.

公开(公告)号：US11094511B2

公开(公告)日：2021-08-17

申请号：US16189440

申请日：2018-11-13

Applicant: Applied Materials, Inc.

Inventor： Changhun Lee ,  Michael D. Willwerth ,  Valentin N. Todorow ,  Hean Cheal Lee ,  Hun Sang Kim

IPC: H01J37/32 ,  G03F7/42

Abstract: Embodiments of the present disclosure generally provide an apparatus and methods for processing a substrate. More particularly, embodiments of the present disclosure provide a processing chamber having an enhanced processing efficiency at an edge of a substrate disposed in the processing chamber. In one embodiment, a processing chamber comprises a chamber body defining an interior processing region in a processing chamber, a showerhead assembly disposed in the processing chamber, wherein the showerhead assembly has multiple zones with an aperture density higher at an edge zone than at a center zone of the showerhead assembly, a substrate support assembly disposed in the interior processing region of the processing chamber, and a focus ring disposed on an edge of the substrate support assembly and circumscribing the substrate support assembly, wherein the focus ring has a step having a sidewall height substantially similar to a bottom width.

公开(公告)号：US20200013661A1

公开(公告)日：2020-01-09

申请号：US16576645

申请日：2019-09-19

Applicant: Applied Materials, Inc.

Inventor： Chih-Hsun Hsu ,  Tza-Jing Gung ,  Benjamin Schwarz ,  Shahid Rauf ,  Ankur Agarwal ,  Vijay D. Parkhe ,  Michael D. Willwerth ,  Zhiqiang Guo

IPC: H01L21/683

Abstract: Electrostatic chucks with variable pixelated magnetic field are described. For example, an electrostatic chuck (ESC) includes a ceramic plate having a front surface and a back surface, the front surface for supporting a wafer or substrate. A base is coupled to the back surface of the ceramic plate. A plurality of electromagnets is disposed in the base, the plurality of electromagnets configured to provide pixelated magnetic field tuning capability for the ESC.

公开(公告)号：US09948214B2

公开(公告)日：2018-04-17

申请号：US13793512

申请日：2013-03-11

Applicant: Applied Materials, Inc.

Inventor： Dmitry Lubomirsky ,  Jennifer Y. Sun ,  Sehn Thach ,  Xing Lin ,  Michael D. Willwerth ,  Konstantin Makhratchev

IPC: H02N13/00 ,  H01L21/67 ,  H01L21/683 ,  H01L21/687 ,  B23B31/28

CPC classification number: H02N13/00 ,  B23B31/28 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/6831 ,  H01L21/68792

Abstract: Embodiments of the present invention provide electrostatic chucks for operating at elevated temperatures. One embodiment of the present invention provides a dielectric chuck body for an electrostatic chuck. The dielectric chuck body includes a substrate supporting plate having a top surface for receiving a substrate and a back surface opposing the top surface, an electrode embedded in the substrate supporting plate, and a shaft having a first end attached to the back surface of the substrate supporting plate and a second end opposing the first end. The second end is configured to contact a cooling base and provide temperature control to the substrate supporting plate. The shaft is hollow having a sidewall enclosing a central opening, and two or more channels formed through the sidewall and extending from the first end to the second end.

公开(公告)号：US08771423B2

公开(公告)日：2014-07-08

申请号：US13649196

申请日：2012-10-11

Applicant: Applied Materials, Inc.

Inventor： Changhun Lee ,  Michael D. Willwerth ,  Hoan Nguyen

IPC: C23C16/50 ,  C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC classification number: H01L21/67069 ,  H01J37/32623 ,  H01J37/32642 ,  H01L21/68735 ,  H01L21/68757

Abstract: Embodiments of a cover ring for use in a plasma processing chamber are provided. In one embodiment, a cover ring for use in a plasma processing chamber includes a ring-shaped body fabricated from a yttrium (Y) containing material. The body includes a bottom surface having an inner locating ring and an outer locating ring. The inner locating ring extends further from the body than the outer locating ring. The body includes an inner diameter wall having a main wall and a secondary wall separated by a substantially horizontal land. The body also includes a top surface having an outer sloped top surface meeting an inner sloped surface at an apex. The inner sloped surface defines an angle with a line perpendicular to a centerline of the body less than about 70 degrees.

Abstract translation: 提供了一种用于等离子体处理室的盖环的实施例。 在一个实施例中，用于等离子体处理室的盖环包括由含钇（Y）的材料制成的环形主体。 主体包括具有内定位环和外定位环的底表面。 内定位环比外定位环更远离主体。 主体包括具有主壁和由基本上水平的平台分开的次级壁的内径壁。 身体还包括顶表面，其具有在顶点处会聚内倾斜表面的外倾斜顶表面。 内部倾斜表面与垂直于身体中心线的线形成小于约70度的角度。

公开(公告)号：US20130277339A1

公开(公告)日：2013-10-24

申请号：US13632306

申请日：2012-10-01

Applicant: APPLIED MATERIALS, INC.

Inventor： Michael D. Willwerth ,  David Palagashvili ,  Michael G. Chafin ,  Ying-Sheng Lin

IPC: B23K10/00

CPC classification number: H01J37/321 ,  H01J37/32642 ,  H01J37/32715 ,  H01J37/32724

Abstract: Undesirable heating of a semiconductor process ring is prevented by thermally isolating the process ring from the insulating puck of an electrostatic chuck, and providing a thermally conductive and electrically insulating thermal ring contacting both the semiconductor process ring and an underlying metal base having internal coolant flow passages.

Abstract translation: 通过将工艺环与静电卡盘的绝缘圆盘热隔离，并且提供与半导体工艺环和下面的金属基座接触的导热和电绝缘的热环来防止半导体工艺环的不希望的加热，其具有内部冷却剂流动通道 。