公开(公告)号：US09378928B2

公开(公告)日：2016-06-28

申请号：US14445965

申请日：2014-07-29

Applicant: APPLIED MATERIALS, INC.

Inventor： Jibing Zeng ,  Brian T. West ,  Rongping Wang ,  Manoj A. Gajendra

IPC: H01J37/02 ,  H01J37/32 ,  H05H1/30 ,  H05H1/24

CPC classification number: H01J37/3211 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32568 ,  H01J37/32807 ,  H01J37/32834 ,  H01J37/32844 ,  H05H1/2406 ,  H05H1/30 ,  H05H2001/2468 ,  Y02C20/30

Abstract: Apparatus for treating a gas in a conduit of a substrate processing system are provided. In some embodiments, an apparatus for treating a gas in a conduit of a substrate processing system includes: a dielectric tube to be coupled to a conduit of a substrate processing system to allow a flow of gases through the dielectric tube, wherein the dielectric tube has a conical sidewall; and an RF coil wound about an outer surface of the conical sidewall of the dielectric tube, the RF coil having a first end to provide an RF input to the RF coil, the first end of the RF coil disposed proximate a first end of the dielectric tube and a second end disposed proximate a second end of the dielectric tube. In some embodiments, the RF coil is hollow and includes coolant fittings to couple the hollow RF coil to a coolant supply.

Abstract translation: 提供了用于处理基板处理系统的管道中的气体的装置。 在一些实施例中，用于处理衬底处理系统的导管中的气体的装置包括：电介质管，其被耦合到衬底处理系统的导管，以允许气体流过电介质管，其中介电管具有 锥形侧壁; 以及围绕所述电介质管的所述锥形侧壁的外表面缠绕的RF线圈，所述RF线圈具有第一端以向所述RF线圈提供RF输入，所述RF线圈的所述第一端靠近所述电介质的第一端设置 管和设置在电介质管的第二端附近的第二端。 在一些实施例中，RF线圈是中空的并且包括将中空RF线圈耦合到冷却剂供应的冷却剂配件。

公开(公告)号：US20160118226A1

公开(公告)日：2016-04-28

申请号：US14986070

申请日：2015-12-31

Applicant: Applied Materials, Inc.

Inventor： Michael S. Cox ,  Rongping Wang ,  Brian T. West ,  Roger M. Johnson ,  Colin John Dickinson

IPC: H01J37/32 ,  H01J37/16

CPC classification number: H01J37/3266 ,  H01J37/165 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32596 ,  H01J37/32651 ,  H01J37/32669 ,  H01J37/32844 ,  H01J2237/002 ,  H01J2237/327 ,  H01J2237/332 ,  H01J2237/334 ,  Y02C20/30

Abstract: Embodiments disclosed herein include a plasma source for abating compounds produced in semiconductor processes. The plasma source has a first plate and a second plate parallel to the first plate. An electrode is disposed between the first and second plates and an outer wall is disposed between the first and second plates surrounding the cylindrical electrode. The plasma source has a first plurality of magnets disposed on the first plate and a second plurality of magnets disposed on the second plate. The magnetic field created by the first and second plurality of magnets is substantially perpendicular to the electric field created between the electrode and the outer wall. In this configuration, a dense plasma is created.

公开(公告)号：US11355325B2

公开(公告)日：2022-06-07

申请号：US17125178

申请日：2020-12-17

Applicant: APPLIED MATERIALS, INC.

Inventor： Ramesh Gopalan ,  Hemant Mungekar ,  Guomin Mao ,  Rongping Wang ,  Teryl Pratt

IPC: H05H1/00 ,  H01J37/32

Abstract: Methods and apparatus for plasma processing are provided herein. For example, apparatus can include a system for plasma processing including a remote plasma source including a supply terminal configured to connect to a power source and an output configured to deliver RF power to a plasma block of the remote plasma source for creating a plasma and a controller configured to control operation of the remote plasma source based on a measured input power at the supply terminal.

公开(公告)号：US10211030B2

公开(公告)日：2019-02-19

申请号：US15104461

申请日：2015-06-15

Applicant: Applied Materials, Inc.

Inventor： Rongping Wang ,  Ruizhe Ren ,  Jon C. Farr ,  Chethan Mangalore ,  Peter Demonte ,  Parthiban Balakrishna

IPC: H01F27/28 ,  H01J37/32

Abstract: Embodiments of the present disclosure include a radial frequency plasma source having a split type inner coil assembly. In one embodiment, the split type inner coil assembly comprises two intertwining coils. In another embodiment, the split type inner coil assembly includes looped coils forming a dome.

公开(公告)号：US10187966B2

公开(公告)日：2019-01-22

申请号：US15147974

申请日：2016-05-06

Applicant: Applied Materials, Inc.

Inventor： Rongping Wang ,  Jibing Zeng ,  David Muquing Hou ,  Michael S. Cox ,  Zheng Yuan ,  James L'Heureux

IPC: H05H1/46 ,  H05H1/24 ,  H01J37/32

Abstract: Embodiments disclosed herein include a plasma source, an abatement system and a vacuum processing system for abating compounds produced in semiconductor processes. In one embodiment, a plasma source includes a dielectric tube and a coil antenna surrounding the tube. The coil antenna includes a plurality of turns, and at least one turn is shorted. Selectively shorting one or more turns of the coil antenna helps reduce the inductance of the coil antenna, allowing higher power to be supplied to the coil antenna that covers more processing volume. Higher power supplied to the coil antenna and larger processing volume lead to an improved DRE.

公开(公告)号：US09240308B2

公开(公告)日：2016-01-19

申请号：US14498920

申请日：2014-09-26

Applicant: Applied Materials, Inc.

Inventor： Michael S. Cox ,  Rongping Wang ,  Brian T. West ,  Roger M. Johnson ,  Colin John Dickinson

IPC: C23C16/54 ,  H01J37/32

CPC classification number: H01J37/32844 ,  B01D53/323 ,  B01D2257/55 ,  B01D2257/553 ,  B01D2257/556 ,  B01D2258/0216 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/32495 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32596 ,  H01J37/32669 ,  H01J37/32825 ,  H01J2237/332 ,  H01J2237/334 ,  H01J2237/335 ,  H01L21/02123 ,  H01L21/02274 ,  Y02C20/30

Abstract: Embodiments disclosed herein include an abatement system for abating compounds produced in semiconductor processes. The abatement system includes a plasma source that has a first plate and a second plate parallel to the first plate. An electrode is disposed between the first and second plates and an outer wall is disposed between the first and second plates surrounding the electrode. The plasma source has a first plurality of magnets disposed on the first plate and a second plurality of magnets disposed on the second plate. The magnetic field created by the first and second plurality of magnets is substantially perpendicular to the electric field created between the electrode and the outer wall. In this configuration, a dense plasma is created.

Abstract translation: 本文公开的实施方案包括减轻半导体工艺中产生的化合物的减排系统。 减排系统包括具有平行于第一板的第一板和第二板的等离子体源。 电极设置在第一和第二板之间，并且外壁设置在围绕电极的第一和第二板之间。 等离子体源具有设置在第一板上的第一多个磁体和设置在第二板上的第二多个磁体。 由第一和第二多个磁体产生的磁场基本上垂直于在电极和外壁之间产生的电场。 在该配置中，产生致密等离子体。