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公开(公告)号：US20210166921A1
公开(公告)日：2021-06-03
申请号：US16701986
申请日：2019-12-03
Applicant: Applied Materials, Inc.
Inventor： Elizabeth Neville , Satish Radhakrishnan , Kartik Shah , Vinay Prabhakar , Venkata Sharat Chandra Parimi , Sungwon Ha
IPC: H01J37/32 , H01L21/67 , H01L21/687
Abstract: An example semiconductor processing system may include a chamber body having sidewalls and a base. The processing system may also include a substrate support extending through the base of the chamber body. The substrate support may include a support platen configured to support a semiconductor substrate, and a shaft coupled with the support platen. The processing system may further include a plate coupled with the shaft of the substrate support. The plate may have an emissivity greater than 0.5. In some embodiments, the plate may include a radiation shied disposed proximate the support platen. In some embodiments, the plate may include a pumping plate disposed proximate the base of the chamber body. In some embodiments, the emissivity of the plate may range between about 0.5 and about 0.95.
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公开(公告)号：US10100408B2
公开(公告)日：2018-10-16
申请号：US14594296
申请日：2015-01-12
Applicant: Applied Materials, Inc.
Inventor： Sungwon Ha , Kwangduk Douglas Lee , Ganesh Balasubramanian , Juan Carlos Rocha-Alvarez , Martin Jay Seamons , Ziqing Duan , Zheng John Ye , Bok Hoen Kim , Lei Jing , Ngoc Le , Ndanka Mukuti
IPC: C23C16/455 , C23C16/44 , C23C16/458 , C23C16/509 , H01J37/32
Abstract: Embodiments described herein relate to a faceplate for improving film uniformity. A semiconductor processing apparatus includes a pedestal, an edge ring and a faceplate having distinct regions with differing hole densities. The faceplate has an inner region and an outer region which surrounds the inner region. The inner region has a greater density of holes formed therethrough when compared to the outer region. The inner region is sized to correspond with a substrate being processed while the outer region is sized to correspond with the edge ring.
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公开(公告)号：US20230120710A1
公开(公告)日：2023-04-20
申请号：US17502873
申请日：2021-10-15
Applicant: Applied Materials, Inc.
Inventor： Zaoyuan Ge , Yin Xiong , Sungwon Ha , Abdul Aziz Khaja , Amit Bansal , Prasath Poomani , Ajit Laxman Kulkarni , Sarah Michelle Bobek , Badri N. Ramamurthi
Abstract: Exemplary processing chambers may include a body having sidewalls and a bottom plate. The bottom plate may define an exhaust opening and a gas inlet. The chambers may include a faceplate seated atop the body. The chambers may include a purge ring seated atop the bottom plate. The purge ring may include a ring body having an outer edge and an inner edge defining an open interior. The ring body may have a surface disposed against the bottom plate. The ring body may define an opening aligned with the exhaust opening. The surface may define a fluid port aligned and coupled with the gas inlet. The surface may define arcuate grooves extending into the fluid port. The arcuate grooves may be parallel with the inner and outer edges. The surface may define radial grooves extending from the open interior to an arcuate groove.
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公开(公告)号：US11600470B2
公开(公告)日：2023-03-07
申请号：US16728552
申请日：2019-12-27
Applicant: Applied Materials, Inc.
Inventor： Venkata Sharat Chandra Parimi , Satish Radhakrishnan , Xiaoquan Min , Sarah Michelle Bobek , Sungwon Ha , Prashant Kumar Kulshreshtha , Vinay Prabhakar
Abstract: Exemplary semiconductor processing chambers may include a chamber body including sidewalls and a base. The chambers may include a substrate support extending through the base of the chamber body. The substrate support may include a support platen configured to support a semiconductor substrate. The substrate support may include a shaft coupled with the support platen. The substrate support may include a shield coupled with the shaft of the substrate support. The shield may include a plurality of apertures defined through the shield. The substrate support may include a block seated in an aperture of the shield.
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公开(公告)号：US20220384161A1
公开(公告)日：2022-12-01
申请号：US17330061
申请日：2021-05-25
Applicant: Applied Materials, Inc.
Inventor： Sarah Michelle Bobek , Ruiyun Huang , Abdul Aziz Khaja , Amit Bansal , Dong Hyung Lee , Ganesh Balasubramanian , Tuan Anh Nguyen , Sungwon Ha , Anjana M. Patel , Ratsamee Limdulpaiboon , Karthik Janakiraman , Kwangduk Douglas Lee
Abstract: Exemplary methods of treating a chamber may include delivering a cleaning precursor to a remote plasma unit. The methods may include forming a plasma of the cleaning precursor. The methods may include delivering plasma effluents of the cleaning precursor to a processing region of a semiconductor processing chamber. The processing region may be defined by one or more chamber components. The one or more chamber components may include an oxide coating. The methods may include halting delivery of the plasma effluents. The methods may include treating the oxide coating with a hydrogen-containing material delivered to the processing region subsequent halting delivery of the plasma effluents.
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Patent Agency Ranking
公开(公告)号：US20220130650A1
公开(公告)日：2022-04-28
申请号：US17077624
申请日：2020-10-22
Applicant: Applied Materials, Inc.
IPC: H01J37/32 , H01L21/67 , H01L21/02 , H01L21/033 , C23C16/505 , C23C16/44
Abstract: Exemplary semiconductor processing systems may include a chamber body including sidewalls and a base. The system may include a substrate support extending through the base of the chamber body. The chamber body may define an access circumferentially extending about the substrate support at the base of the chamber body. The system may include one or more isolators disposed within the chamber body. The one or more isolators may define an exhaust path between the one or more isolators and the chamber body. The exhaust path may extend to the base of the chamber body. The systems may include a fluid source fluidly coupled with the chamber body at the access extending about the substrate support.
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公开(公告)号：US10580623B2
公开(公告)日：2020-03-03
申请号：US14539914
申请日：2014-11-12
Applicant: Applied Materials, Inc.
Inventor： Zheng John Ye , Ganesh Balasubramanian , Thuy Britcher , Jay D. Pinson, II , Hiroji Hanawa , Juan Carlos Rocha-Alvarez , Kwangduk Douglas Lee , Martin Jay Seamons , Bok Hoen Kim , Sungwon Ha
IPC: C23C16/00 , H01L21/00 , H01J37/32 , C23C16/509
Abstract: A system for modifying the uniformity pattern of a thin film deposited in a plasma processing chamber includes a single radio-frequency (RF) power source that is coupled to multiple points on the discharge electrode of the plasma processing chamber. Positioning of the multiple coupling points, a power distribution between the multiple coupling points, or a combination of both are selected to at least partially compensate for a consistent non-uniformity pattern of thin films produced by the chamber. The power distribution between the multiple coupling points may be produced by an appropriate RF phase difference between the RF power applied at each of the multiple coupling points.
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公开(公告)号：US10403535B2
公开(公告)日：2019-09-03
申请号：US14824229
申请日：2015-08-12
Applicant: Applied Materials, Inc.
Inventor： Zheng John Ye , Jay D. Pinson, II , Hiroji Hanawa , Jianhua Zhou , Xing Lin , Ren-Guan Duan , Kwangduk Douglas Lee , Bok Hoen Kim , Swayambhu P. Behera , Sungwon Ha , Ganesh Balasubramanian , Juan Carlos Rocha-Alvarez , Prashant Kumar Kulshreshtha , Jason K. Foster , Mukund Srinivasan , Uwe P. Haller , Hari K. Ponnekanti
IPC: H02N13/00 , H01L21/683 , H01L21/687
Abstract: Embodiments of the present disclosure provide an electrostatic chuck for maintaining a flatness of a substrate being processed in a plasma reactor at high temperatures. In one embodiment, the electrostatic chuck comprises a chuck body coupled to a support stem, the chuck body having a substrate supporting surface, and the chuck body has a volume resistivity value of about 1×107 ohm-cm to about 1×1015 ohm-cm in a temperature of about 250° C. to about 700° C., and an electrode embedded in the body, the electrode is coupled to a power supply. In one example, the chuck body is composed of an aluminum nitride material which has been observed to be able to optimize chucking performance around 600° C. or above during a deposition or etch process, or any other process that employ both high operating temperature and substrate clamping features.
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公开(公告)号：US12211673B2
公开(公告)日：2025-01-28
申请号：US17077624
申请日：2020-10-22
Applicant: Applied Materials, Inc.
IPC: H01J37/32 , C23C16/44 , C23C16/455 , C23C16/505 , H01L21/02 , H01L21/033 , H01L21/67
Abstract: Exemplary semiconductor processing systems may include a chamber body including sidewalls and a base. The system may include a substrate support extending through the base of the chamber body. The chamber body may define an access circumferentially extending about the substrate support at the base of the chamber body. The system may include one or more isolators disposed within the chamber body. The one or more isolators may define an exhaust path between the one or more isolators and the chamber body. The exhaust path may extend to the base of the chamber body. The systems may include a fluid source fluidly coupled with the chamber body at the access extending about the substrate support.
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公开(公告)号：US11699577B2
公开(公告)日：2023-07-11
申请号：US17330061
申请日：2021-05-25
Applicant: Applied Materials, Inc.
Inventor： Sarah Michelle Bobek , Ruiyun Huang , Abdul Aziz Khaja , Amit Bansal , Dong Hyung Lee , Ganesh Balasubramanian , Tuan Anh Nguyen , Sungwon Ha , Anjana M. Patel , Ratsamee Limdulpaiboon , Karthik Janakiraman , Kwangduk Douglas Lee
CPC classification number: H01J37/32862 , B08B7/0035 , C23C14/564 , H01J37/32449 , H01J37/32504 , H01J2237/335
Abstract: Exemplary methods of treating a chamber may include delivering a cleaning precursor to a remote plasma unit. The methods may include forming a plasma of the cleaning precursor. The methods may include delivering plasma effluents of the cleaning precursor to a processing region of a semiconductor processing chamber. The processing region may be defined by one or more chamber components. The one or more chamber components may include an oxide coating. The methods may include halting delivery of the plasma effluents. The methods may include treating the oxide coating with a hydrogen-containing material delivered to the processing region subsequent halting delivery of the plasma effluents.
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