公开(公告)号：US20230392259A1

公开(公告)日：2023-12-07

申请号：US18313736

申请日：2023-05-08

Applicant: Applied Materials, Inc.

Inventor： Nitin Pathak ,  Tuan A. Nguyen ,  Amit Bansal ,  Badri N. Ramamurthi ,  Thomas Rubio ,  Juan Carlos Rocha-Alvarez

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/458

CPC classification number: C23C16/45559 ,  C23C16/46 ,  C23C16/4585 ,  C23C16/4412

Abstract: Exemplary semiconductor processing chambers may include a substrate support including a top surface. A peripheral edge region of the top surface may be recessed relative to a medial region of the top surface. The chambers may include a pumping liner disposed about an exterior surface of the substrate support. The chambers may include a liner disposed between the substrate support and the pumping liner. The liner may be spaced apart from the exterior surface to define a purge lumen between the liner and the substrate support. The chambers may include an edge ring seated on the peripheral edge region. The edge ring may extend beyond a peripheral edge of the substrate support and above a portion of the liner. A gap may be formed between a bottom surface of the edge ring and a top surface of the liner. The gap and the purge lumen may be fluidly coupled.

公开(公告)号：US20230170231A1

公开(公告)日：2023-06-01

申请号：US18161968

申请日：2023-01-31

Applicant: Applied Materials, Inc.

Inventor： Jason M. Schaller ,  Steve Hongkham ,  Charles T. Carlson ,  Tuan A. Nguyen ,  Swaminathan T. Srinivasan ,  Khokan Chandra Paul

IPC: H01L21/67 ,  H01L21/687

CPC classification number: H01L21/6719 ,  H01L21/68742 ,  H01L21/68707 ,  H01L21/67167

Abstract: Exemplary substrate processing systems may include a factory interface and a load lock coupled with the factory interface. The systems may include a transfer chamber coupled with the load lock. The transfer chamber may include a robot configured to retrieve substrates from the load lock. The systems may include a chamber system positioned adjacent and coupled with the transfer chamber. The chamber system may include a transfer region laterally accessible to the robot. The transfer region may include a plurality of substrate supports disposed about the transfer region. Each substrate support of the plurality of substrate supports may be vertically translatable. The transfer region may also include a transfer apparatus rotatable about a central axis and configured to engage substrates and transfer substrates among the plurality of substrate supports. The chamber system may also include a plurality of processing regions vertically offset and axially aligned with an associated substrate support.

公开(公告)号：US20220307135A1

公开(公告)日：2022-09-29

申请号：US17214011

申请日：2021-03-26

Applicant: Applied Materials, Inc.

Inventor： Nitin Pathak ,  Tuan A. Nguyen ,  Amit Bansal ,  Badri N. Ramamurthi ,  Thomas Rubio ,  Juan Carlos Rocha-Alvarez

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/44

Abstract: Exemplary semiconductor processing chambers may include a substrate support including a top surface. A peripheral edge region of the top surface may be recessed relative to a medial region of the top surface. The chambers may include a pumping liner disposed about an exterior surface of the substrate support. The chambers may include a liner disposed between the substrate support and the pumping liner. The liner may be spaced apart from the exterior surface to define a purge lumen between the liner and the substrate support. The chambers may include an edge ring seated on the peripheral edge region. The edge ring may extend beyond a peripheral edge of the substrate support and above a portion of the liner. A gap may be formed between a bottom surface of the edge ring and a top surface of the liner. The gap and the purge lumen may be fluidly coupled.

公开(公告)号：US20210013055A1

公开(公告)日：2021-01-14

申请号：US16922874

申请日：2020-07-07

Applicant: Applied Materials, Inc.

Inventor： Jason M. Schaller ,  Steve Hongkham ,  Charles T. Carlson ,  Tuan A. Nguyen ,  Swaminathan T. Srinivasan ,  Khokan Chandra Paul

IPC: H01L21/67 ,  H01L21/687

Abstract: Exemplary substrate processing systems may include a factory interface and a load lock coupled with the factory interface. The systems may include a transfer chamber coupled with the load lock. The transfer chamber may include a robot configured to retrieve substrates from the load lock. The systems may include a chamber system positioned adjacent and coupled with the transfer chamber. The chamber system may include a transfer region laterally accessible to the robot. The transfer region may include a plurality of substrate supports disposed about the transfer region. Each substrate support of the plurality of substrate supports may be vertically translatable. The transfer region may also include a transfer apparatus rotatable about a central axis and configured to engage substrates and transfer substrates among the plurality of substrate supports. The chamber system may also include a plurality of processing regions vertically offset and axially aligned with an associated substrate support.

公开(公告)号：US11742185B2

公开(公告)日：2023-08-29

申请号：US17213947

申请日：2021-03-26

Applicant: Applied Materials, Inc.

Inventor： Saket Rathi ,  Tuan A. Nguyen ,  Amit Bansal ,  Yuxing Zhang ,  Badri N. Ramamurthi ,  Nitin Pathak ,  Abdul Aziz Khaja ,  Sarah Michelle Bobek

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/50 ,  C23C16/44

CPC classification number: H01J37/32449 ,  C23C16/4405 ,  C23C16/45502 ,  C23C16/45591 ,  C23C16/50 ,  H01J37/32357 ,  H01J37/32862 ,  H01J2237/332

Abstract: Exemplary semiconductor processing systems may include an output manifold that defines at least one plasma outlet. The systems may include a gasbox disposed beneath the output manifold. The gasbox may include an inlet side facing the output manifold and an outlet side opposite the inlet side. The gasbox may include an inner wall that defines a central fluid lumen. The inner wall may taper outward from the inlet side to the outlet side. The systems may include an annular spacer disposed below the gasbox. An inner diameter of the annular spacer may be greater than a largest inner diameter of the central fluid lumen. The systems may include a faceplate disposed beneath the annular spacer. The faceplate may define a plurality of apertures extending through a thickness of the faceplate.

公开(公告)号：US11643725B2

公开(公告)日：2023-05-09

申请号：US17214011

申请日：2021-03-26

Applicant: Applied Materials, Inc.

Inventor： Nitin Pathak ,  Tuan A. Nguyen ,  Amit Bansal ,  Badri N. Ramamurthi ,  Thomas Rubio ,  Juan Carlos Rocha-Alvarez

IPC: C23C16/40 ,  C23C16/455 ,  C23C16/44 ,  C23C16/458 ,  C23C16/46

CPC classification number: C23C16/45559 ,  C23C16/4412 ,  C23C16/4585 ,  C23C16/46

Abstract: Exemplary semiconductor processing chambers may include a substrate support including a top surface. A peripheral edge region of the top surface may be recessed relative to a medial region of the top surface. The chambers may include a pumping liner disposed about an exterior surface of the substrate support. The chambers may include a liner disposed between the substrate support and the pumping liner. The liner may be spaced apart from the exterior surface to define a purge lumen between the liner and the substrate support. The chambers may include an edge ring seated on the peripheral edge region. The edge ring may extend beyond a peripheral edge of the substrate support and above a portion of the liner. A gap may be formed between a bottom surface of the edge ring and a top surface of the liner. The gap and the purge lumen may be fluidly coupled.

公开(公告)号：US11574826B2

公开(公告)日：2023-02-07

申请号：US16922874

申请日：2020-07-07

Applicant: Applied Materials, Inc.

Inventor： Jason M. Schaller ,  Steve Hongkham ,  Charles T. Carlson ,  Tuan A. Nguyen ,  Swaminathan T. Srinivasan ,  Khokan Chandra Paul

IPC: H01L21/67 ,  H01L21/687

Abstract: Exemplary substrate processing systems may include a factory interface and a load lock coupled with the factory interface. The systems may include a transfer chamber coupled with the load lock. The transfer chamber may include a robot configured to retrieve substrates from the load lock. The systems may include a chamber system positioned adjacent and coupled with the transfer chamber. The chamber system may include a transfer region laterally accessible to the robot. The transfer region may include a plurality of substrate supports disposed about the transfer region. Each substrate support of the plurality of substrate supports may be vertically translatable. The transfer region may also include a transfer apparatus rotatable about a central axis and configured to engage substrates and transfer substrates among the plurality of substrate supports. The chamber system may also include a plurality of processing regions vertically offset and axially aligned with an associated substrate support.

公开(公告)号：US20220122879A1

公开(公告)日：2022-04-21

申请号：US17072790

申请日：2020-10-16

Applicant: Applied Materials, Inc.

Inventor： Ravikumar Patil ,  Tuan A. Nguyen

IPC: H01L21/687 ,  H01L21/67 ,  H01J37/32

Abstract: Exemplary substrate processing systems may include a body that defines processing and transfer regions. The systems may include a liner atop the body. The systems may include a faceplate atop the liner. The systems may include a support within the body. The support may be vertically translatable between process and transfer positions. The support may include a plate having a heater. The support may include a shaft coupled with the plate. The support may include a bowl about the shaft below the plate. The bowl may be in alignment with the liner. The support may include springs that push the bowl upward as the support translates to the process position. The support may include straps that couple the plate and bowl. The support may include a hard stop. The bowl may contact the liner in the process position and may be spaced apart from the liner in the transfer position.

公开(公告)号：US20210166942A1

公开(公告)日：2021-06-03

申请号：US16700758

申请日：2019-12-02

Applicant: Applied Materials, Inc.

Inventor： Jun Ma ,  Amit Bansal ,  Tuan A. Nguyen

IPC: H01L21/033 ,  H01L21/02 ,  H01L21/311

Abstract: Exemplary methods of semiconductor processing may include depositing a material on a substrate seated on a substrate support housed in a processing region of a semiconductor processing chamber. The processing region may be at least partially defined by the substrate support and a faceplate. The substrate support may be at a first position within the processing region relative to the faceplate. The methods may include translating the substrate support to a second position relative to the faceplate. The methods may include forming a plasma of an etchant precursor within the processing region of the semiconductor processing chamber. The methods may include etching an edge region of the substrate.