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    Pre-loaded bowl mechanism for providing a symmetric radio frequency return path
    2.
    发明授权
    Pre-loaded bowl mechanism for providing a symmetric radio frequency return path 有权

    公开(公告)号：US11887884B2

    公开(公告)日：2024-01-30

    申请号：US17072790

    申请日：2020-10-16

    Applicant: Applied Materials, Inc.

    Inventor： Ravikumar Patil ,  Tuan A. Nguyen

    IPC: H01L21/68 ,  H01L21/687 ,  H01L21/67 ,  H01J37/32

    CPC classification number: H01L21/68792 ,  H01J37/32724 ,  H01L21/67103 ,  H01L21/67167 ,  H01J2237/20235

    Abstract: Exemplary substrate processing systems may include a body that defines processing and transfer regions. The systems may include a liner atop the body. The systems may include a faceplate atop the liner. The systems may include a support within the body. The support may be vertically translatable between process and transfer positions. The support may include a plate having a heater. The support may include a shaft coupled with the plate. The support may include a bowl about the shaft below the plate. The bowl may be in alignment with the liner. The support may include springs that push the bowl upward as the support translates to the process position. The support may include straps that couple the plate and bowl. The support may include a hard stop. The bowl may contact the liner in the process position and may be spaced apart from the liner in the transfer position.

    UNIFORM IN SITU CLEANING AND DEPOSITION
    3.
    发明申请
    UNIFORM IN SITU CLEANING AND DEPOSITION 有权

    公开(公告)号：US20220310360A1

    公开(公告)日：2022-09-29

    申请号：US17213947

    申请日：2021-03-26

    Applicant: Applied Materials, Inc.

    Inventor： Saket Rathi ,  Tuan A. Nguyen ,  Amit Bansal ,  Yuxing Zhang ,  Badri N. Ramamurthi ,  Nitin Pathak ,  Abdul Aziz Khaja ,  Sarah Michelle Bobek

    IPC: H01J37/32 ,  C23C16/44 ,  C23C16/455 ,  C23C16/50

    Abstract: Exemplary semiconductor processing systems may include an output manifold that defines at least one plasma outlet. The systems may include a gasbox disposed beneath the output manifold. The gasbox may include an inlet side facing the output manifold and an outlet side opposite the inlet side. The gasbox may include an inner wall that defines a central fluid lumen. The inner wall may taper outward from the inlet side to the outlet side. The systems may include an annular spacer disposed below the gasbox. An inner diameter of the annular spacer may be greater than a largest inner diameter of the central fluid lumen. The systems may include a faceplate disposed beneath the annular spacer. The faceplate may define a plurality of apertures extending through a thickness of the faceplate.

    High-density substrate processing systems and methods
    4.
    发明授权
    High-density substrate processing systems and methods 有权

    公开(公告)号：US12074042B2

    公开(公告)日：2024-08-27

    申请号：US18161968

    申请日：2023-01-31

    Applicant: Applied Materials, Inc.

    Inventor： Jason M. Schaller ,  Steve Hongkham ,  Charles T. Carlson ,  Tuan A. Nguyen ,  Swaminathan T. Srinivasan ,  Khokan Chandra Paul

    IPC: H01L21/67 ,  H01L21/687

    CPC classification number: H01L21/6719 ,  H01L21/67167 ,  H01L21/68707 ,  H01L21/68742

    Abstract: Exemplary substrate processing systems may include a factory interface and a load lock coupled with the factory interface. The systems may include a transfer chamber coupled with the load lock. The transfer chamber may include a robot configured to retrieve substrates from the load lock. The systems may include a chamber system positioned adjacent and coupled with the transfer chamber. The chamber system may include a transfer region laterally accessible to the robot. The transfer region may include a plurality of substrate supports disposed about the transfer region. Each substrate support of the plurality of substrate supports may be vertically translatable. The transfer region may also include a transfer apparatus rotatable about a central axis and configured to engage substrates and transfer substrates among the plurality of substrate supports. The chamber system may also include a plurality of processing regions vertically offset and axially aligned with an associated substrate support.

    BOTTOM PURGE FOR SEMICONDUCTOR PROCESSING SYSTEM
    7.
    发明申请
    BOTTOM PURGE FOR SEMICONDUCTOR PROCESSING SYSTEM 有权

    公开(公告)号：US20210320017A1

    公开(公告)日：2021-10-14

    申请号：US16844121

    申请日：2020-04-09

    Applicant: Applied Materials, Inc.

    Inventor： Nitin Pathak ,  Vinay Prabhakar ,  Badri N. Ramamurthi ,  Viren Kalsekar ,  Tuan A. Nguyen ,  Juan Carlos Rocha-Alvarez

    IPC: H01L21/67 ,  H01L21/677 ,  H01L21/687

    Abstract: Exemplary substrate processing systems may include a plurality of processing regions. The systems may include a transfer region housing defining a transfer region fluidly coupled with the plurality of processing regions. The systems may include a plurality of substrate supports, and each substrate support of the plurality of substrate supports may be vertically translatable between the transfer region and an associated processing region of the plurality of processing regions. The systems may include a transfer apparatus including a rotatable shaft extending through the transfer region housing. The transfer apparatus may include an end effector coupled with the rotatable shaft. The end effector may include a central hub defining a central aperture fluidly coupled with a purge source. The end effector may also include a plurality of arms having a number of arms equal to a number of substrate supports of the plurality of substrate supports.

    Chamber deposition and etch process
    9.
    发明授权
    Chamber deposition and etch process 有权

    公开(公告)号：US11139168B2

    公开(公告)日：2021-10-05

    申请号：US16700758

    申请日：2019-12-02

    Applicant: Applied Materials, Inc.

    Inventor： Jun Ma ,  Amit Bansal ,  Tuan A. Nguyen

    IPC: H01L21/033 ,  H01L21/02 ,  H01L21/311

    Abstract: Exemplary methods of semiconductor processing may include depositing a material on a substrate seated on a substrate support housed in a processing region of a semiconductor processing chamber. The processing region may be at least partially defined by the substrate support and a faceplate. The substrate support may be at a first position within the processing region relative to the faceplate. The methods may include translating the substrate support to a second position relative to the faceplate. The methods may include forming a plasma of an etchant precursor within the processing region of the semiconductor processing chamber. The methods may include etching an edge region of the substrate.

    SEMICONDUCTOR PROCESSING CHAMBERS AND METHODS FOR CLEANING THE SAME
    10.
    发明申请
    SEMICONDUCTOR PROCESSING CHAMBERS AND METHODS FOR CLEANING THE SAME 有权

    公开(公告)号：US20210032747A1

    公开(公告)日：2021-02-04

    申请号：US16936110

    申请日：2020-07-22

    Applicant: Applied Materials, Inc.

    Inventor： Nitin Pathak ,  Yuxing Zhang ,  Tuan A. Nguyen ,  Kalyanjit Ghosh ,  Amit Bansal ,  Juan C. Rocha

    IPC: C23C16/44 ,  H01J37/32 ,  C23C16/52

    Abstract: A processing chamber may include a gas distribution member, a substrate support, and a pumping liner. The gas distribution member and the substrate support may at least in part define a processing volume. The pumping liner may define an internal volume in fluid communication with the processing volume via a plurality of apertures of the pumping liner circumferentially disposed about the processing volume. The processing chamber may further include a flow control mechanism operable to direct fluid flow from the internal volume of the pumping liner into the processing volume via a subset of the plurality of apertures of the pumping liner during fluid distribution into the processing volume from the gas distribution member.

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