公开(公告)号：US10455642B2

公开(公告)日：2019-10-22

申请号：US15012885

申请日：2016-02-02

Applicant: Applied Materials, Inc.

Inventor： Preetham Rao ,  Abhilash J. Mayur

IPC: H05B3/00 ,  F27B17/00 ,  F27D5/00 ,  H01L21/67

Abstract: A lamphead for thermal processing of a substrate is provided. The lamphead includes a housing having a first edge surrounding a first plane. The lamphead further includes a plurality of segmented lamps disposed within the housing, each segmented lamp aligned substantially parallel to the first plane. Each segmented lamp includes a first end connected to a location on the housing; a first wire segment connected to the first end; a first filament connected to the first wire segment; an intermediate wire segment connected to the first filament; a second filament connected to intermediate wire segment; a second wire segment connected to the second filament; and a second end connected to the second wire segment; where the second end is connected to an opposing location on the housing.

公开(公告)号：US10234772B2

公开(公告)日：2019-03-19

申请号：US15829809

申请日：2017-12-01

Applicant: APPLIED MATERIALS, INC.

Inventor： Mangesh Bangar ,  Bruce E. Adams ,  Kelly E. Hollar ,  Abhilash J. Mayur ,  Huixiong Dai ,  Jaujiun Chen

IPC: G03B27/68 ,  G03F7/20

Abstract: A calibration curve for a wafer comprising a layer on a substrate is determined. The calibration curve represents a local parameter change as a function of a treatment parameter associated with a wafer exposure to a light. The local parameter of the wafer is measured. An overlay error is determined based on the local parameter of the wafer. A treatment map is computed based on the calibration curve to correct the overlay error for the wafer. The treatment map represents the treatment parameter as a function of a location on the wafer.

公开(公告)号：US20170097576A1

公开(公告)日：2017-04-06

申请号：US14874353

申请日：2015-10-02

Applicant: Applied Materials Inc.

Inventor： Mangesh Bangar ,  Bruce E. Adams ,  Kelly E. Hollar ,  Abhilash J. Mayur ,  Huixiong Dai ,  Jaujiun Chen

IPC: G03F7/20

CPC classification number: G03F7/70633

Abstract: A calibration curve for a wafer comprising a layer on a substrate is determined. The calibration curve represents a local parameter change as a function of a treatment parameter associated with a wafer exposure to a light. The local parameter of the wafer is measured. An overlay error is determined based on the local parameter of the wafer. A treatment map is computed based on the calibration curve to correct the overlay error for the wafer. The treatment map represents the treatment parameter as a function of a location on the wafer.

公开(公告)号：US09076828B2

公开(公告)日：2015-07-07

申请号：US14264828

申请日：2014-04-29

Applicant: Applied Materials, Inc.

Inventor： Blake Koelmel ,  Joseph M. Ranish ,  Abhilash J. Mayur

IPC: H01L21/673 ,  F27D11/12 ,  H01L21/687 ,  F27D5/00 ,  H01L21/67

CPC classification number: H01L21/67346 ,  F27D5/0037 ,  F27D11/12 ,  F27D2005/0081 ,  H01L21/67115 ,  H01L21/68735

Abstract: Embodiments of the present invention provide an edge ring for supporting a substrate with increased temperature uniformity. More particularly, embodiments of the present invention provide an edge ring having one or more surface area increasing structures formed on an energy receiving surface of the edge ring.

Abstract translation: 本发明的实施例提供一种用于支撑具有增加的温度均匀性的基板的边缘环。 更具体地，本发明的实施例提供一种边缘环，其具有形成在边缘环的能量接收表面上的一个或多个表面积增加结构。

公开(公告)号：US11587789B2

公开(公告)日：2023-02-21

申请号：US17123386

申请日：2020-12-16

Applicant: Applied Materials, Inc.

Inventor： Xinming Zhang ,  Abhilash J. Mayur ,  Shashank Sharma ,  Norman L. Tam ,  Matthew Spuller ,  Zeqiong Zhao

IPC: H01L21/02 ,  H01L27/11556 ,  H01L21/30 ,  H01L27/11582

Abstract: The present disclosure provides systems and methods for processing channel structures of substrates that include positioning the substrate in a first processing chamber having a first processing volume being in fluid communication with a plasma source. The substrate can include a channel structure with high aspect ratio features having aspect ratios greater than about 20:1. The method can also include forming an oxide cap layer over a silicon-containing layer of the channel structure and exposing the oxide cap layer to a hydrogen-or-deuterium radical to nucleate the silicon-containing layer of the channel structures of the substrate. Forming the oxide cap layer and exposing the channel structure with the hydrogen radical occurs in the first processing chamber to form a nucleated substrate. The method can also include positioning the nucleated substrate in a second processing chamber with a second processing volume and heating the nucleated substrate in the second processing chamber.

公开(公告)号：US10857623B2

公开(公告)日：2020-12-08

申请号：US15838010

申请日：2017-12-11

Applicant: Applied Materials, Inc.

Inventor： Dean Jennings ,  Haifan Liang ,  Mark Yam ,  Vijay Parihar ,  Abhilash J. Mayur ,  Aaron Muir Hunter ,  Bruce E. Adams ,  Joseph M. Ranish

IPC: B23K26/06 ,  B23K26/073 ,  B23K26/352 ,  H01L21/324 ,  H01L21/268 ,  H01L21/02 ,  H01L21/20

Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

公开(公告)号：US09839976B2

公开(公告)日：2017-12-12

申请号：US14533997

申请日：2014-11-05

Applicant: Applied Materials, Inc.

Inventor： Dean Jennings ,  Haifan Liang ,  Mark Yam ,  Vijay Parihar ,  Abhilash J. Mayur ,  Aaron Muir Hunter ,  Bruce E. Adams ,  Joseph Michael Ranish

IPC: B23K26/06 ,  H01L21/268 ,  B23K26/00 ,  B23K26/073 ,  H01L21/324 ,  H01L21/20

CPC classification number: B23K26/0608 ,  B23K26/0604 ,  B23K26/0613 ,  B23K26/073 ,  B23K26/0732 ,  B23K26/0736 ,  B23K26/0738 ,  B23K26/352 ,  H01L21/02675 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/324

Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

公开(公告)号：US11945045B2

公开(公告)日：2024-04-02

申请号：US17090709

申请日：2020-11-05

Applicant: Applied Materials, Inc.

Inventor： Dean Jennings ,  Haifan Liang ,  Mark Yam ,  Vijay Parihar ,  Abhilash J. Mayur ,  Aaron Muir Hunter ,  Bruce E. Adams ,  Joseph M. Ranish

IPC: B23K26/06 ,  B23K26/073 ,  B23K26/352 ,  H01L21/268 ,  H01L21/324 ,  H01L21/02

CPC classification number: B23K26/0608 ,  B23K26/0604 ,  B23K26/0613 ,  B23K26/073 ,  B23K26/0732 ,  B23K26/0736 ,  B23K26/0738 ,  B23K26/352 ,  H01L21/268 ,  H01L21/324 ,  H01L21/02532 ,  H01L21/02675

Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

公开(公告)号：USD959490S1

公开(公告)日：2022-08-02

申请号：US29754188

申请日：2020-10-07

Applicant: Applied Materials, Inc.

Designer： Kartik Bhupendra Shah ,  Kartik Santhanam ,  Bindusagar Marath Sankarathodi ,  Abhilash J. Mayur ,  Dayal Ramachandran ,  Amritha Rammohan ,  Stephen Moffatt ,  Eugene Lobanov

公开(公告)号：US09114479B2

公开(公告)日：2015-08-25

申请号：US14229238

申请日：2014-03-28

Applicant: Applied Materials, Inc.

Inventor： Stephen Moffatt ,  Abhilash J. Mayur ,  Sundar Ramamurthy ,  Joseph Ranish ,  Aaron Hunter

IPC: B23K26/00 ,  B23K26/06 ,  F27B17/00 ,  H01L21/67 ,  B23K26/12

CPC classification number: H01L21/67115 ,  B23K26/0639 ,  B23K26/064 ,  B23K26/08 ,  B23K26/127 ,  F27B17/0025 ,  H01L21/67248

Abstract: A method and apparatus are provided for treating a substrate. The substrate is positioned on a support in a thermal treatment chamber. Electromagnetic radiation is directed toward the substrate to anneal a portion of the substrate. Other electromagnetic radiation is directed toward the substrate to preheat a portion of the substrate. The preheating reduces thermal stresses at the boundary between the preheat region and the anneal region. Any number of anneal and preheat regions are contemplated, with varying shapes and temperature profiles, as needed for specific embodiments. Any convenient source of electromagnetic radiation may be used, such as lasers, heat lamps, white light lamps, or flash lamps.

Abstract translation: 提供了一种处理基板的方法和装置。 衬底位于热处理室中的支撑件上。 电磁辐射被引向衬底以退火衬底的一部分。 其他电磁辐射被引向衬底以预热衬底的一部分。 预热减少了预热区域和退火区域之间的边界处的热应力。 根据具体实施方案的需要，预期任何数量的退火和预热区域具有变化的形状和温度曲线。 可以使用任何方便的电磁辐射源，例如激光器，加热灯，白光灯或闪光灯。