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70 条记录 (耗时 0.027 秒)

    Substrate support tolerant to thermal expansion stresses
    13.
    发明授权
    Substrate support tolerant to thermal expansion stresses 失效
    基材支持耐热膨胀应力

    公开(公告)号：US06583980B1

    公开(公告)日：2003-06-24

    申请号：US09641536

    申请日：2000-08-18

    申请人： You Wang ,  Arnold Kholodenko ,  Shamouil Shamouilian ,  Alexander M. Veytser ,  Wing L. Cheng

    发明人： You Wang ,  Arnold Kholodenko ,  Shamouil Shamouilian ,  Alexander M. Veytser ,  Wing L. Cheng

    IPC分类号： H01G300

    CPC分类号： H01L21/6831

    摘要： A chamber 30 for processing a substrate 25 comprises a support 55 including an electrode 70 at least partially covered by a dielectric 60 that is permeable to electromagnetic energy. The electrode 70 may be chargeable to electrostatically hold the substrate 25, to couple energy to a gas in the chamber 30, or both. A base 90 below the support 55 comprises a slot 95 that may be adapted to serve as a thermal expansion slot to reduce thermal stresses.

    摘要翻译： 用于处理基板25的室30包括支撑件55，其包括至少部分地被电介质60覆盖的电极70，电介质60可透过电磁能。 电极70可以被充电以静电保持衬底25，以将能量耦合到腔室30中的气体，或两者。 支撑件55下方的底座90包括可适于用作热膨胀槽以减少热应力的槽95。

    Plasma chamber support having dual electrodes
    14.
    发明授权
    Plasma chamber support having dual electrodes 有权
    具有双电极的等离子体室支撑

    公开(公告)号：US06478924B1

    公开(公告)日：2002-11-12

    申请号：US09513992

    申请日：2000-03-07

    申请人： Shamouil Shamouilian ,  Arnold Kholodenko ,  Kwok Manus Wong ,  Liang-Guo Wang ,  Alexander M. Veytser ,  Dennis S. Grimard

    发明人： Shamouil Shamouilian ,  Arnold Kholodenko ,  Kwok Manus Wong ,  Liang-Guo Wang ,  Alexander M. Veytser ,  Dennis S. Grimard

    IPC分类号： H05H100

    CPC分类号： H01J37/32706 ,  H01L21/6833 ,  Y10T279/23

    摘要： A process chamber 110 capable of processing a substrate 50 in a plasma comprises a dielectric 210 covering a first electrode 220 and a second electrode 230, a conductor 250 supporting the dielectric 210, and a voltage supply 170 to supply an RF voltage to the first electrode 220 or the second electrode 230 in the dielectric 210. The first electrode 220 capacitively couples with a process electrode 225 to energize process gas in the process chamber 110 and RF voltage applied to the second electrode 230 is capacitively coupled to the conductor 250 and through a collar 260 or the second electrode 230 is directly capacitively coupled through the collar 260.

    摘要翻译： 能够处理等离子体中的衬底50的处理室110包括覆盖第一电极220和第二电极230的电介质210，支撑电介质210的导体250以及向第一电极提供RF电压的电压源170 220或电介质210中的第二电极230.第一电极220与处理电极225电容耦合以激励处理室110中的处理气体，并且施加到第二电极230的RF电压电容耦合到导体250并且通过 套环260或第二电极230通过套环260直接电容耦合。

    Electrostatic chuck having a unidirectionally conducting coupler layer
    16.
    发明授权
    Electrostatic chuck having a unidirectionally conducting coupler layer 失效
    静电卡盘具有单向导电的耦合器层

    公开(公告)号：US5801915A

    公开(公告)日：1998-09-01

    申请号：US829711

    申请日：1997-03-28

    申请人： Arnold Kholodenko ,  Alexander M. Veytser ,  Shamouil Shamouilian

    发明人： Arnold Kholodenko ,  Alexander M. Veytser ,  Shamouil Shamouilian

    IPC分类号： B23Q3/15 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  H01L21/683 ,  H02N13/00

    CPC分类号： C23C16/45521 ,  C23C16/4586 ,  H01L21/6831 ,  H01L21/6833 ,  H02N13/00 ,  Y10T279/23

    摘要： An electrostatic chuck (20) for holding a substrate (45) in a process chamber (80) having a voltage supply terminal (65) for charging the chuck (20). The chuck includes an electrostatic member (25) comprising at least one electrode (30), an electrically insulated holding surface (40) for holding a substrate (45) thereon, and an electrical contact surface (48) for providing charge to the electrode. A unidirectionally conducting coupler layer (70) electrically couples the contact surface (48) of the electrostatic member to the voltage supply terminal to conduct charge substantially only in a single direction from the terminal to the contact surface. Preferably, an electrical connector (50) having a junction surface (55) bonded to the contact surface (55) of the electrode, and a terminal surface (60) for electrically contacting the voltage supply terminal (65), is used to electrically couple the unidirectionally conducting coupler layer (70) to the voltage supply terminal (65).

    摘要翻译： 一种用于将衬底（45）保持在具有用于对卡盘（20）充电的电压供应端子（65）的处理室（80）中的静电吸盘（20）。 卡盘包括一个包括至少一个电极（30）的静电部件（25），用于在其上保持基板（45）的电绝缘保持表面（40）和用于向电极提供电荷的电接触表面（48）。 单向导电耦合器层（70）将静电部件的接触表面（48）电耦合到电压供应端子，以基本上仅在从端子到接触表面的单个方向上进行充电。 优选地，具有接合到电极的接触表面（55）的接合面（55）的电连接器（50）和用于电接触电压端子（65）的端子表面（60）用于电耦合 所述单向导电耦合器层（70）连接到所述电压源端子（65）。

    Electrostatic chuck with improved RF power distribution
    19.
    发明授权
    Electrostatic chuck with improved RF power distribution 有权
    具有改进的RF功率分布的静电吸盘

    公开(公告)号：US06267839B1

    公开(公告)日：2001-07-31

    申请号：US09229509

    申请日：1999-01-12

    申请人： Shamouil Shamouilian ,  Ananda H. Kumar ,  Arnold Kholodenko

    发明人： Shamouil Shamouilian ,  Ananda H. Kumar ,  Arnold Kholodenko

    IPC分类号： C23C1600

    CPC分类号： B23Q3/154 ,  H01L21/6833 ,  Y10T279/23

    摘要： A susceptor for a wafer support of a semiconductor processing chamber having multiple parallel electrical contacts between an RF electrode and a thick robust electrode near a bottom of the susceptor. The thick robust electrode has a low resistance and, therefore, evenly distributes RF power over its area. The multiple parallel contacts ensure that the RF power is also uniformly distributed across an area of the RF electrode. A plurality of electrically conductive vias extending between the robust electrode and the RF electrode make a plurality of parallel electrical contacts therebetween. Generally, the robust electrode is attached to a bottom side of the susceptor and is aligned substantially parallel to the RF electrode. An insulator plate is attached to a bottom of the susceptor for electrically isolating the robust electrode for the pedestal.

    摘要翻译： 用于半导体处理室的晶片支架的感受体，其在RF电极和靠近基座的底部的厚坚固电极之间具有多个平行的电触点。 厚坚固的电极具有低电阻，因此在其区域上均匀分布RF功率。 多个并联触点确保RF功率也均匀分布在RF电极的一个区域上。 在坚固电极和RF电极之间延伸的多个导电通孔在它们之间形成多个平行的电接触。 通常，坚固的电极附接到基座的底侧，并且基本上平行于RF电极排列。 绝缘板连接到基座的底部，用于电绝缘基座的坚固电极。

    Chuck having pressurized zones of heat transfer gas
    20.
    发明授权
    Chuck having pressurized zones of heat transfer gas 有权
    夹头具有加热区的传热气体

    公开(公告)号：US06320736B1

    公开(公告)日：2001-11-20

    申请号：US09312909

    申请日：1999-05-17

    申请人： Shamouil Shamouilian ,  Arnold Kholodenko ,  Siamak Salimian ,  Hamid Noorbakhsh ,  Efrain Quiles ,  Dennis S. Grimard

    发明人： Shamouil Shamouilian ,  Arnold Kholodenko ,  Siamak Salimian ,  Hamid Noorbakhsh ,  Efrain Quiles ,  Dennis S. Grimard

    IPC分类号： H01H2300

    CPC分类号： H01L21/6831 ,  C23C16/4586

    摘要： A chuck 28 for holding a substrate 4 comprises a surface 27 capable of receiving the substrate 4, the surface 27 having a gas inlet port 40 and a gas exhaust port 42. A non-sealing protrusion is between the gas inlet port 40 and the gas exhaust port 42. The non-sealing protrusion 44 impedes the flow of heat transfer gas between the gas inlet port 40 and the gas exhaust port 42 without blocking the flow of heat transfer gas. Preferably, a sealing protrusion 46 is provided around the periphery of the chuck 28 to form a substantially gas-tight seal with the substrate 4 to enclose and prevent leakage of heat transfer gas into a surrounding chamber 6.

    摘要翻译： 用于保持基板4的卡盘28包括能够接收基板4的表面27，表面27具有气体入口40和排气口42.非密封突起在气体入口40和气体 排气口42.非密封突起44阻止气体入口40和排气口42之间的传热气体的流动，而不阻碍传热气体的流动。 优选地，密封突起46设置在卡盘28的周边周围，以与基底4形成基本上气密的密封，以封闭并防止传热气体泄漏到周围室6中。