公开(公告)号：US08063462B2

公开(公告)日：2011-11-22

申请号：US12212754

申请日：2008-09-18

申请人： Kazumasa Tanida ,  Masahiro Sekiguchi ,  Susumu Harada

发明人： Kazumasa Tanida ,  Masahiro Sekiguchi ,  Susumu Harada

IPC分类号： H01L31/02

CPC分类号： H01L27/14618 ,  H01L2224/02372 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05548 ,  H01L2224/0557 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/13 ,  H01L2224/13025 ,  H01L2924/00014 ,  H01L2924/16235 ,  H01L2224/05099

摘要： A semiconductor device includes a semiconductor substrate having a first surface in which a light-receiving portion and electrodes are provided. The semiconductor substrate has a penetrating wiring layer connecting the first surface and the second surface. A light-transmissive protective member is disposed on the semiconductor substrate so as to cover the first surface. A gap is provided between the semiconductor substrate and the light-transmissive protective member. A protective film is formed at a surface of the light-transmissive protective member. The protective film has an opening provided at a region corresponding to the light-receiving portion.

摘要翻译： 半导体器件包括具有其中设置有光接收部分和电极的第一表面的半导体衬底。 半导体衬底具有连接第一表面和第二表面的穿透布线层。 透光性保护构件设置在半导体衬底上以覆盖第一表面。 在半导体衬底和透光保护构件之间设置间隙。 在透光保护部件的表面形成有保护膜。 保护膜具有设置在与受光部对应的区域的开口部。

公开(公告)号：US07888778B2

公开(公告)日：2011-02-15

申请号：US12207288

申请日：2008-09-09

申请人： Kazumasa Tanida ,  Masahiro Sekiguchi ,  Ninao Sato ,  Kenji Takahashi

发明人： Kazumasa Tanida ,  Masahiro Sekiguchi ,  Ninao Sato ,  Kenji Takahashi

IPC分类号： H01L23/52 ,  H01L21/4763

CPC分类号： H01L21/76898 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/94 ,  H01L2224/0401 ,  H01L2224/13022 ,  H01L2224/94 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01055 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/3025 ,  H01L2224/11

摘要： A semiconductor device includes a semiconductor substrate having a through hole. An active layer is formed on a first surface of the semiconductor substrate. An inner wall surface of the through hole, a bottom surface of the through hole closed by the active layer and a second surface of the semiconductor substrate are covered with an insulating layer. A first opening is formed in the insulating layer which is present on the bottom surface of the through hole. A second opening is formed in the insulating layer which is present on the second surface of the semiconductor substrate. A first wiring layer is formed from within the through hole onto the second surface of the semiconductor substrate. A second wiring layer is formed to connect to the second surface through the second opening.

摘要翻译： 半导体器件包括具有通孔的半导体衬底。 在半导体衬底的第一表面上形成有源层。 通孔的内壁表面，由有源层封闭的通孔的底表面和半导体衬底的第二表面被绝缘层覆盖。 在存在于通孔底面的绝缘层中形成第一开口。 在存在于半导体基板的第二表面上的绝缘层中形成第二开口。 第一布线层由贯通孔形成在半导体基板的第二面上。 第二布线层形成为通过第二开口连接到第二表面。

公开(公告)号：US07888760B2

公开(公告)日：2011-02-15

申请号：US12249438

申请日：2008-10-10

申请人： Hitoshi Sugiyama ,  Atsuko Yamashita ,  Kazutaka Akiyama ,  Susumu Harada ,  Masahiro Sekiguchi ,  Masayuki Dohi ,  Kazumasa Tanida ,  Chiaki Takubo ,  Hiroshi Yoshikawa ,  Akihiro Hori

发明人： Hitoshi Sugiyama ,  Atsuko Yamashita ,  Kazutaka Akiyama ,  Susumu Harada ,  Masahiro Sekiguchi ,  Masayuki Dohi ,  Kazumasa Tanida ,  Chiaki Takubo ,  Hiroshi Yoshikawa ,  Akihiro Hori

IPC分类号： H01L27/146 ,  H01L31/0216

CPC分类号： H01L27/14634 ,  H01L27/14618 ,  H01L27/14623 ,  H01L27/14636 ,  H01L27/14685 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/05022 ,  H01L2224/05025 ,  H01L2224/05147 ,  H01L2224/0557 ,  H01L2224/05624 ,  H01L2224/05666 ,  H01L2224/05684 ,  H01L2224/13 ,  H01L2224/13025 ,  H01L2224/16 ,  H01L2924/00014

摘要： A solid state imaging device includes: an imaging device substrate with an imaging device section formed on a first major surface side thereof; a backside interconnect electrode provided on a second major surface side of the imaging device substrate and electrically connected to the imaging device section, the second major surface being on the opposite side of the first major surface; a circuit substrate provided with a circuit substrate electrode opposed to the second major surface; a connecting portion electrically connecting the backside interconnect electrode to the circuit substrate electrode; and a light shielding layer provided coplanar with the backside interconnect electrode or on the circuit substrate side of the backside interconnect electrode.

摘要翻译： 固态成像装置包括：具有形成在其第一主表面侧的成像装置部分的成像装置基板; 设置在成像器件基板的第二主表面侧并电连接到成像器件部分的背面互连电极，第二主表面在第一主表面的相对侧上; 电路基板，设置有与第二主表面相对的电路基板电极; 连接部，其将所述背面侧配线电极与所述电路基板电极电连接; 以及与背面配线电极共同设置的遮光层，或背面配线电极的电路基板侧。

公开(公告)号：US20090057844A1

公开(公告)日：2009-03-05

申请号：US12203389

申请日：2008-09-03

申请人： Kazumasa Tanida ,  Masahiro Sekiguchi

发明人： Kazumasa Tanida ,  Masahiro Sekiguchi

IPC分类号： H01L21/768 ,  H01L23/538

CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L25/50 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05548 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05666 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/16 ,  H01L2924/00014

摘要： A semiconductor device 1 comprises a semiconductor substrate 2 having a through hole 3. A first insulation layer 4 having an opening 4a equal in diameter to the through hole 3 covers a front surface of the semiconductor substrate 2, and a first wiring layer 5 is formed thereon to cover the opening 4a. Further, a second insulation layer 6 is formed in the through hole 3 and on a rear surface of the semiconductor substrate 2. The second insulation layer 6 is formed to be in contact with an inner side of the first wiring layer 5 and has, in its contact portion, a plurality of small openings 6a smaller in diameter than the opening 4 of the first insulation layer 4. Further, a second wiring layer 7 is formed to fill the inside of the through hole 3, and the second wiring layer 7 is in contact with the inner side of the first wiring layer 5 via the small openings 6a of the second insulation layer 6.

摘要翻译： 半导体器件1包括具有通孔3的半导体衬底2.具有与通孔3直径相等的开口4a的第一绝缘层4覆盖半导体衬底2的前表面，形成第一布线层5 在其上以覆盖开口4a。 此外，在通孔3和半导体基板2的后表面上形成第二绝缘层6.第二绝缘层6形成为与第一布线层5的内侧接触，并且具有 其接触部分，直径小于第一绝缘层4的开口4的多个小开口6a。此外，形成第二布线层7以填充通孔3的内部，第二布线层7为 通过第二绝缘层6的小开口6a与第一布线层5的内侧接触。

公开(公告)号：US20090079020A1

公开(公告)日：2009-03-26

申请号：US12212754

申请日：2008-09-18

申请人： Kazumasa Tanida ,  Masahiro Sekiguchi ,  Susumu Harada

发明人： Kazumasa Tanida ,  Masahiro Sekiguchi ,  Susumu Harada

IPC分类号： H01L31/00 ,  H01L21/00

CPC分类号： H01L27/14618 ,  H01L2224/02372 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05548 ,  H01L2224/0557 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/13 ,  H01L2224/13025 ,  H01L2924/00014 ,  H01L2924/16235 ,  H01L2224/05099

摘要： A semiconductor device includes a semiconductor substrate having a first surface in which a light-receiving portion and electrodes are provided. The semiconductor substrate has a penetrating wiring layer connecting the first surface and the second surface. A light-transmissive protective member is disposed on the semiconductor substrate so as to cover the first surface. A gap is provided between the semiconductor substrate and the light-transmissive protective member. A protective film is formed at a surface of the light-transmissive protective member. The protective film has an opening provided at a region corresponding to the light-receiving portion.

摘要翻译： 半导体器件包括具有其中设置有光接收部分和电极的第一表面的半导体衬底。 半导体衬底具有连接第一表面和第二表面的穿透布线层。 透光性保护构件设置在半导体衬底上以覆盖第一表面。 在半导体衬底和透光保护构件之间设置间隙。 在透光保护部件的表面形成有保护膜。 保护膜具有设置在与受光部对应的区域的开口部。

公开(公告)号：US20090065906A1

公开(公告)日：2009-03-12

申请号：US12207288

申请日：2008-09-09

申请人： Kazumasa Tanida ,  Masahiro Sekiguchi ,  Ninao Sato ,  Kenji Takahashi

发明人： Kazumasa Tanida ,  Masahiro Sekiguchi ,  Ninao Sato ,  Kenji Takahashi

IPC分类号： H01L23/52 ,  H01L21/4763

CPC分类号： H01L21/76898 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/94 ,  H01L2224/0401 ,  H01L2224/13022 ,  H01L2224/94 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01055 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/3025 ,  H01L2224/11

摘要： A semiconductor device includes a semiconductor substrate having a through hole. An active layer is formed on a first surface of the semiconductor substrate. An inner wall surface of the through hole, a bottom surface of the through hole closed by the active layer and a second surface of the semiconductor substrate are covered with an insulating layer. A first opening is formed in the insulating layer which is present on the bottom surface of the through hole. A second opening is formed in the insulating layer which is present on the second surface of the semiconductor substrate. A first wiring layer is formed from within the through hole onto the second surface of the semiconductor substrate. A second wiring layer is formed to connect to the second surface through the second opening.

摘要翻译： 半导体器件包括具有通孔的半导体衬底。 在半导体衬底的第一表面上形成有源层。 通孔的内壁表面，由有源层封闭的通孔的底表面和半导体衬底的第二表面被绝缘层覆盖。 在存在于通孔底面的绝缘层中形成第一开口。 在存在于半导体基板的第二表面上的绝缘层中形成第二开口。 第一布线层由贯通孔形成在半导体基板的第二面上。 第二布线层形成为通过第二开口连接到第二表面。

公开(公告)号：US20090096051A1

公开(公告)日：2009-04-16

申请号：US12249438

申请日：2008-10-10

申请人： Hitoshi SUGIYAMA ,  Atsuko Yamashita ,  Kazutaka Akiyama ,  Susumu Harada ,  Masahiro Sekiguchi ,  Masayuki Dohi ,  Kazumasa Tanida ,  Chiaki Takubo ,  Hiroshi Yoshikawa ,  Akihiro Hori

发明人： Hitoshi SUGIYAMA ,  Atsuko Yamashita ,  Kazutaka Akiyama ,  Susumu Harada ,  Masahiro Sekiguchi ,  Masayuki Dohi ,  Kazumasa Tanida ,  Chiaki Takubo ,  Hiroshi Yoshikawa ,  Akihiro Hori

IPC分类号： H01L31/0216 ,  H01L31/18

CPC分类号： H01L27/14634 ,  H01L27/14618 ,  H01L27/14623 ,  H01L27/14636 ,  H01L27/14685 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/05022 ,  H01L2224/05025 ,  H01L2224/05147 ,  H01L2224/0557 ,  H01L2224/05624 ,  H01L2224/05666 ,  H01L2224/05684 ,  H01L2224/13 ,  H01L2224/13025 ,  H01L2224/16 ,  H01L2924/00014

摘要： A solid state imaging device includes: an imaging device substrate with an imaging device section formed on a first major surface side thereof; a backside interconnect electrode provided on a second major surface side of the imaging device substrate and electrically connected to the imaging device section, the second major surface being on the opposite side of the first major surface; a circuit substrate provided with a circuit substrate electrode opposed to the second major surface; a connecting portion electrically connecting the backside interconnect electrode to the circuit substrate electrode; and a light shielding layer provided coplanar with the backside interconnect electrode or on the circuit substrate side of the backside interconnect electrode.

摘要翻译： 固态成像装置包括：具有形成在其第一主表面侧的成像装置部分的成像装置基板; 设置在成像器件基板的第二主表面侧并电连接到成像器件部分的背面互连电极，第二主表面在第一主表面的相对侧上; 电路基板，设置有与第二主表面相对的电路基板电极; 连接部，其将所述背面侧配线电极与所述电路基板电极电连接; 以及与背面配线电极共同设置的遮光层，或背面配线电极的电路基板侧。

公开(公告)号：US09004337B2

公开(公告)日：2015-04-14

申请号：US13479968

申请日：2012-05-24

申请人： Satoshi Hongo ,  Kenji Takahashi ,  Kazumasa Tanida

发明人： Satoshi Hongo ,  Kenji Takahashi ,  Kazumasa Tanida

IPC分类号： B31B1/68 ,  H01L21/20 ,  H01L21/67 ,  H01L21/762

CPC分类号： H01L21/2007 ,  H01L21/67092 ,  H01L21/76251 ,  Y10T29/413

摘要： According to one embodiment, a system for manufacturing a semiconductor device includes a spontaneous joining unit and a deformative joining unit. The spontaneous joining unit overlaps a first substrate and a second substrate and spontaneously joins mutual center portions of respective joint faces of the first substrate and the second substrate. The deformative joining unit deforms at least one peripheral portion of the respective joint faces of the first substrate and second substrate joined by the spontaneous joining unit toward the other peripheral portion and joins the mutual peripheral portions of the respective joint faces.

摘要翻译： 根据一个实施例，一种用于制造半导体器件的系统包括自发接合单元和变形接合单元。 自发接合单元与第一基板和第二基板重叠，并且自发地接合第一基板和第二基板的各个接合面的相互中心部分。 变形接合单元使由第一基板和第二基板的各个接合面的至少一个周边部分朝向另一个周边部分变形，并且连接各个接合面的相互的周边部分。

公开(公告)号：US08980671B2

公开(公告)日：2015-03-17

申请号：US13368930

申请日：2012-02-08

申请人： Satoshi Hongo ,  Kazumasa Tanida ,  Akihiro Hori ,  Kenji Takahashi ,  Hideo Numata

发明人： Satoshi Hongo ,  Kazumasa Tanida ,  Akihiro Hori ,  Kenji Takahashi ,  Hideo Numata

IPC分类号： H01L21/00 ,  H01L21/30 ,  H01L21/46 ,  H01L27/146 ,  H01L21/84 ,  H01L27/12

CPC分类号： H01L27/1464 ,  H01L21/84 ,  H01L27/1203 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/1469

摘要： A manufacturing method of a semiconductor device according to embodiments includes forming a photodiode layer, which is an active region including a photodiode, on a main surface of a first substrate, forming a wiring layer, which includes a wire and a dielectric layer covering the wire, on the photodiode layer, and forming a dielectric film on the wiring layer. The manufacturing method of the semiconductor device according to the embodiments further includes bonding a second substrate to the dielectric film of the first substrate so that a crystal orientation of the photodiode layer matches a crystal orientation of the second substrate.

摘要翻译： 根据实施例的半导体器件的制造方法包括在第一衬底的主表面上形成作为包括光电二极管的有源区的光电二极管层，形成布线层，其包括线和覆盖线的介电层 在光电二极管层上，并在布线层上形成电介质膜。 根据实施例的半导体器件的制造方法还包括将第二衬底接合到第一衬底的电介质膜，使得光电二极管层的晶体取向与第二衬底的晶体取向相匹配。

公开(公告)号：US08822307B2

公开(公告)日：2014-09-02

申请号：US13422966

申请日：2012-03-16

申请人： Naoko Yamaguchi ,  Kazumasa Tanida ,  Hideo Numata ,  Satoshi Hongo ,  Kenji Takahashi

发明人： Naoko Yamaguchi ,  Kazumasa Tanida ,  Hideo Numata ,  Satoshi Hongo ,  Kenji Takahashi

IPC分类号： H01L21/762 ,  B32B37/10 ,  B32B38/18 ,  H01L21/67

CPC分类号： H01L21/76251 ,  H01L21/67092 ,  Y10T156/1744

摘要： According to one embodiment, a semiconductor manufacturing apparatus is provided. The semiconductor manufacturing apparatus includes a stage, a substrate supporter, first and second pushers, and a controller. The stage is configured to support outer periphery portions of the first semiconductor substrate from below. The substrate supporter is configured to hold the back of the second semiconductor substrate. The first and second pushers are configured to bring the first and second semiconductor substrates in contact. The controller is configured to form the bonding initiation point between the first and second semiconductor substrates.

摘要翻译： 根据一个实施例，提供一种半导体制造装置。 半导体制造装置包括台，基板支撑件，第一和第二推动器以及控制器。 该台被配置为从下方支撑第一半导体衬底的外围部分。 衬底支撑件构造成保持第二半导体衬底的背面。 第一和第二推动器构造成使第一和第二半导体衬底接触。 控制器被配置为在第一和第二半导体衬底之间形成接合起始点。