-
公开(公告)号：US20120260732A1
公开(公告)日：2012-10-18
申请号：US13382726
申请日：2010-07-16
CPC分类号： G01N27/223 , G01N33/004
摘要： A sensor (2) for sensing a first substance and a second substance, the sensor comprising first (3) and second (5) sensor components each comprising a first material (20), the first material being sensitive to both the first substance and the second substance, the sensor further comprising a barrier (18) for preventing the second substance from passing into the second sensor component (5).
摘要翻译： 一种用于感测第一物质和第二物质的传感器（2），所述传感器包括第一（3）和第二（5）个传感器部件，每个传感器部件包括第一材料（20），所述第一材料对第一物质和 第二物质，传感器还包括用于防止第二物质进入第二传感器部件（5）的阻挡层（18）。
-
公开(公告)号：US20120249168A1
公开(公告)日：2012-10-04
申请号：US13510368
申请日：2010-11-29
IPC分类号： G01N27/04
CPC分类号： G01N27/041 , G01N27/048
摘要： Disclosed is a liquid immersion sensor comprising a substrate (10) carrying a conductive sensing element (20) and a corrosive agent (30) for corroding the conductive sensing element, said corrosive agent being immobilized in the vicinity of the conductive sensing element and being soluble in said liquid.
摘要翻译： 公开了一种液浸传感器，其包括承载导电感测元件（20）的基底（10）和用于腐蚀导电感测元件的腐蚀剂（30），所述腐蚀剂固定在导电感测元件附近并且是可溶的 在所述液体中。
-
公开(公告)号：US09632049B2
公开(公告)日：2017-04-25
申请号：US12962460
申请日：2010-12-07
CPC分类号： G01N27/121 , G01M3/045 , G01N27/06
摘要： Disclosed is an integrated circuit comprising an electrode arrangement for detecting the presence of a liquid, said electrode arrangement comprising a first electrode and a second electrode, wherein, prior to exposure of the electrode arrangement to said liquid, a surface of at least one of the first electrode and second electrode is at least partially covered by a compound that is soluble in the liquid; the electrical properties of the electrode arrangement being dependent on the amount of the compound covering said surface. An package and electronic device comprising such an IC and a method of manufacturing such an IC are also disclosed.
-
公开(公告)号：US08866239B2
公开(公告)日：2014-10-21
申请号：US13289063
申请日：2011-11-04
CPC分类号： B81B7/0012 , B81B2201/0214 , B81B2207/015 , B81C2201/016
摘要： A method of manufacturing an integrated circuit having a substrate comprising a plurality of components and a metallization stack over the components, the metallization stack comprising a first sensing element and a second sensing element adjacent to the first sensing element.
摘要翻译： 一种制造集成电路的方法，所述集成电路具有包括多个部件的基板和在所述部件上的金属化叠层，所述金属化堆叠包括第一感测元件和与所述第一感测元件相邻的第二感测元件。
-
15.发明授权Integrated circuit including a porous material for retaining a liquid and manufacturing method thereof 有权集成电路，包括用于保持液体的多孔材料及其制造方法公开(公告)号：US08779548B2
公开(公告)日：2014-07-15
申请号：US12843809
申请日：2010-07-26
CPC分类号： H01L23/3107 , G01N27/128 , G01N27/223 , H01L23/291 , H01L2924/0002 , H01L2924/19041 , H01L2924/3011 , H01L2924/00
摘要： Disclosed is an integrated circuit (IC) comprising a substrate (10) including a plurality of circuit elements and a metallization stack (20) covering said substrate for providing interconnections between the circuit elements, wherein the top metallization layer of said stack carries a plurality of metal portions (30) embedded in an exposed porous material (40) for retaining a liquid, said porous material laterally separating said plurality of metal portions. An electronic device comprising such an IC and a method of manufacturing such an IC are also disclosed.
摘要翻译： 公开了一种集成电路（IC），其包括包括多个电路元件的基板（10）和覆盖所述基板的金属化叠层（20），用于提供电路元件之间的互连，其中所述堆叠的顶部金属化层承载多个 嵌入暴露的多孔材料（40）中用于保持液体的金属部分（30），所述多孔材料横向分离所述多个金属部分。 还公开了包括这种IC的电子设备和制造这种IC的方法。
-
公开(公告)号：US20100001409A1
公开(公告)日：2010-01-07
申请号：US12514214
申请日：2007-10-29
申请人： Aurelie Humbert , Romano Hoofman
发明人： Aurelie Humbert , Romano Hoofman
IPC分类号： H01L23/48 , H01L21/768 , H01L23/522
CPC分类号： H01L21/7682 , H01L21/76825 , H01L21/76831 , H01L23/5222 , H01L23/53295 , H01L2924/0002 , H01L2924/09701 , H01L2924/00
摘要： The invention relates to a semiconductor device comprising: a substrate (1), the substrate (1) comprising a body (5), the body (5) having a surface, the substrate (1) being provided with an insulating layer (10) on the surface of the body (1);—a conductor (25) with insulating sidewall spacers (22) located in the insulating layer (10), the conductor (25) having a current-flow direction during operation, the conductor (25) having a first width, the insulating sidewall spacers (22) each having a second width being smaller than the first width of the conductor (25), the first width and the second width being measured in a direction perpendicular to the current-flow direction of the conductor (25) and parallel to said surface, the conductor (25) having a first top surface extending parallel to said surface, the insulating sidewall spacers (22) having a second top surface, and airgaps (30) located in the insulating layer (10) adjacent to the insulating sidewall spacers (22), characterized in that the first top surface coincides with the second top surface, and in that the airgaps (30) extend from the surface of the body (5) to said first and second top surface. The invention further relates to a method of manufacturing such a semiconductor device. The semiconductor device according to the invention enables a lower resistance of the conductor while still providing a tolerance for unlanded vias.
摘要翻译： 本发明涉及一种半导体器件，包括：衬底（1），所述衬底（1）包括主体（5），所述主体（5）具有表面，所述衬底（1）设置有绝缘层（10） 在所述主体（1）的表面上; - 具有位于所述绝缘层（10）中的绝缘侧壁间隔物（22）的导体（25），所述导体（25）在操作期间具有电流流动方向，所述导体 ），所述绝缘侧壁间隔件（22）各自具有小于所述导体（25）的第一宽度的第二宽度，所述第一宽度和所述第二宽度在垂直于所述电流流动方向的方向上被测量 的导体（25）并且平行于所述表面，所述导体（25）具有平行于所述表面延伸的第一顶表面，所述绝缘侧壁间隔件（22）具有第二顶表面，以及位于绝缘体中的气隙（30） 邻近绝缘侧壁间隔物（22）的层（10），其特征在于 第一顶表面与第二顶表面重合，并且气囊（30）从主体（5）的表面延伸到所述第一和第二顶表面。 本发明还涉及一种制造这种半导体器件的方法。 根据本发明的半导体器件使得导体的电阻较低，同时仍然提供对未经过过孔的容差。
-
17.发明申请公开(公告)号：US20130032903A1
公开(公告)日：2013-02-07
申请号：US13556926
申请日：2012-07-24
申请人： Matthias Merz , Aurelie Humbert , Roel Daamen , David Tio Castro
发明人： Matthias Merz , Aurelie Humbert , Roel Daamen , David Tio Castro
CPC分类号： G01N27/128 , G01N25/18 , G01N27/121 , G01N27/125 , G01N27/22 , G01N33/004 , G01N33/18 , G01N33/1826 , H01L2224/73265 , H01L2224/92247 , H01L2924/1461 , H01L2924/00
摘要： Disclosed is an integrated circuit comprising a substrate (10) carrying a plurality of circuit elements; a metallization stack (12, 14, 16) interconnecting said circuit elements, said metallization stack comprising a patterned upper metallization layer comprising a first metal portion (20) and a second metal portion (21); a passivation stack (24, 26, 28) covering the metallization stack; a gas sensor including a sensing material portion (32, 74) on the passivation stack; a first conductive portion (38) extending through the passivation stack connecting a first region of the sensing material portion to the first metal portion; and a second conductive portion (40) extending through the passivation stack connecting a second region of the sensing material portion to the second metal portion. A method of manufacturing such an IC is also disclosed.
-
公开(公告)号：US20110185810A1
公开(公告)日：2011-08-04
申请号：US13063325
申请日：2009-09-10
申请人： Aurelie Humbert , Matthias Merz
发明人： Aurelie Humbert , Matthias Merz
IPC分类号： G01N27/22
CPC分类号： G01N27/223
摘要： A sensor senses a magnitude of a physical parameter of the sensor's environment. The sensor has first and second electrodes, and a material layer between them. The material has an electrical property, e.g., capacitance or resistance, whose value depends on the magnitude of the physical parameter. The first electrode is formed in a first layer, and the second electrode is formed in a second layer, different from the first layer. The first layer has a trench and an elevation next to the trench. The trench has a bottom wall and a side wall. The material is positioned on the bottom wall and on the side wall and on top of the elevation. The trench accommodates at least a part of the second electrode. The second electrode leaves exposed the material formed on top of the elevation.
摘要翻译： 传感器感测传感器环境的物理参数的大小。 传感器具有第一和第二电极以及它们之间的材料层。 该材料具有电性能，例如电容或电阻，其值取决于物理参数的大小。 第一电极形成在第一层中，并且第二电极形成在与第一层不同的第二层中。 第一层在沟槽旁边具有沟槽和高度。 沟槽具有底壁和侧壁。 材料位于底壁和侧壁上以及高度的顶部。 沟槽容纳至少一部分第二电极。 第二个电极离开了形成在高程顶部的材料。
-
公开(公告)号：US10197520B2
公开(公告)日：2019-02-05
申请号：US13556926
申请日：2012-07-24
申请人： Matthias Merz , Aurelie Humbert , Roel Daamen , David Tio Castro
发明人： Matthias Merz , Aurelie Humbert , Roel Daamen , David Tio Castro
摘要： Disclosed is an integrated circuit comprising a substrate (10) carrying a plurality of circuit elements; a metallization stack (12, 14, 16) interconnecting said circuit elements, said metallization stack comprising a patterned upper metallization layer comprising a first metal portion (20) and a second metal portion (21); a passivation stack (24, 26, 28) covering the metallization stack; a gas sensor including a sensing material portion (32, 74) on the passivation stack; a first conductive portion (38) extending through the passivation stack connecting a first region of the sensing material portion to the first metal portion; and a second conductive portion (40) extending through the passivation stack connecting a second region of the sensing material portion to the second metal portion. A method of manufacturing such an IC is also disclosed.
-
公开(公告)号：US08707781B2
公开(公告)日：2014-04-29
申请号：US13063325
申请日：2009-09-10
申请人： Aurelie Humbert , Matthias Merz
发明人： Aurelie Humbert , Matthias Merz
IPC分类号： G01N27/22
CPC分类号： G01N27/223
摘要： A sensor senses a magnitude of a physical parameter of the sensor's environment. The sensor has first and second electrodes, and a material layer between them. The material has an electrical property, e.g., capacitance or resistance, whose value depends on the magnitude of the physical parameter. The first electrode is formed in a first layer, and the second electrode is formed in a second layer, different from the first layer. The first layer has a trench and an elevation next to the trench. The trench has a bottom wall and a side wall. The material is positioned on the bottom wall and on the side wall and on top of the elevation. The trench accommodates at least a part of the second electrode. The second electrode leaves exposed the material formed on top of the elevation.
摘要翻译： 传感器感测传感器环境的物理参数的大小。 传感器具有第一和第二电极以及它们之间的材料层。 该材料具有电性能，例如电容或电阻，其值取决于物理参数的大小。 第一电极形成在第一层中，并且第二电极形成在与第一层不同的第二层中。 第一层在沟槽旁边具有沟槽和高度。 沟槽具有底壁和侧壁。 材料位于底壁和侧壁上以及高度的顶部。 沟槽容纳至少一部分第二电极。 第二个电极离开了形成在高程顶部的材料。
-
-
-
-
-
-
-
-
-
搜索结果
30 条记录 (耗时 0.025 秒)
