公开(公告)号：US07560381B2

公开(公告)日：2009-07-14

申请号：US11211786

申请日：2005-08-25

Applicant: Markus Nopper ,  Axel Preusse ,  Matthias Bonkass

Inventor： Markus Nopper ,  Axel Preusse ,  Matthias Bonkass

IPC: H01L21/00

CPC classification number: C23C18/1879 ,  C23C18/1632 ,  C23C18/1678 ,  C23C18/1865 ,  C25D5/54 ,  H01L21/288

Abstract: In an enhanced technique for electroless metal deposition, the substrate is heated to or above the operating temperature for the specific plating solution, while the plating solution may be maintained at a non-critical low temperature to substantially prevent spontaneous self-decomposition within the plating tool. Hence, significant advantages with respect to process control and cost of ownership may be achieved.

Abstract translation: 在用于无电金属沉积的增强技术中，将衬底加热至或高于特定电镀溶液的操作温度，同时电镀溶液可以保持在非临界低温以基本上防止电镀工具内的自发自分解 。 因此，可以实现在过程控制和所有权成本方面的显着优点。

公开(公告)号：US20070166982A1

公开(公告)日：2007-07-19

申请号：US11536041

申请日：2006-09-28

Applicant: Axel Preusse ,  Susanne Wehner ,  Markus Nopper

Inventor： Axel Preusse ,  Susanne Wehner ,  Markus Nopper

IPC: H01L21/44

CPC classification number: H01L21/288 ,  C23C18/1653 ,  C23C18/1671 ,  C23C18/31 ,  C25D5/18 ,  C25D5/34 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76873 ,  H01L21/76874 ,  H01L21/76877

Abstract: By performing an electroless deposition and an electro deposition process in situ, highly reliable metallizations may be provided, wherein limitations with respect to contaminations and device scaling, encountered by conventional chemical vapor deposition (CVD), atomic layer deposition (ALD) and physical vapor deposition (PVD) techniques for the formation of seed layers may be overcome. In some embodiments, a barrier layer is also deposited on the basis of a wet chemical deposition process.

Abstract translation: 通过原位进行无电沉积和电沉积工艺，可以提供高度可靠的金属化，其中通过常规化学气相沉积（CVD），原子层沉积（ALD）和物理气相沉积所遇到的污染和器件结垢的限制 （PVD）技术可以克服种子层的形成。 在一些实施例中，还基于湿化学沉积工艺沉积阻挡层。

公开(公告)号：US20100289125A1

公开(公告)日：2010-11-18

申请号：US12769124

申请日：2010-04-28

Applicant: Frank Feustel ,  Tobias Letz ,  Axel Preusse

Inventor： Frank Feustel ,  Tobias Letz ,  Axel Preusse

IPC: H01L23/48 ,  H01L21/441

CPC classification number: H01L21/76849 ,  H01L21/76867 ,  H01L23/53233 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In sophisticated semiconductor devices, the electromigration performance of copper metal lines at the top interface thereof may be enhanced by forming a copper alloy that is locally restricted to the interface. To this end, an appropriate alloy-forming species, such as aluminum, may be provided on the basis of a non-masked deposition process and may be subsequently removed by a non-masked etch process, wherein the characteristic of the resulting alloy may be adjusted during an intermediate heat treatment.

Abstract translation: 在复杂的半导体器件中，可以通过形成局部限于界面的铜合金来增强铜金属线在其顶部界面处的电迁移性能。 为此，可以在非掩蔽沉积工艺的基础上提供合适的合金形成物质，例如铝，然后通过非掩模蚀刻工艺除去，其中所得合金的特征可以是 在中间热处理期间调整。

公开(公告)号：US07615103B2

公开(公告)日：2009-11-10

申请号：US11201970

申请日：2005-08-11

Applicant: Helge Hartz ,  Markus Nopper ,  Axel Preusse

Inventor： Helge Hartz ,  Markus Nopper ,  Axel Preusse

IPC: B01D19/00

CPC classification number: C25D21/04 ,  C25D5/08 ,  C25D17/02 ,  H01L21/2885

Abstract: The present invention is directed to methods and apparatuses for removing bubbles from a process liquid. The process liquid can comprise a plating solution used in a plating tool. The process liquid is supplied to a tank. A plurality of streams of the process liquid are directed towards a surface of the process liquid from below. This can be done by feeding the process liquid to a flow distributor comprising a plurality of openings providing flow communication between an inner volume of the flow distributor and a main volume of the tank. Before leaving the tank through an outlet, the process liquid flows through a flow barrier.

Abstract translation: 本发明涉及从处理液中除去气泡的方法和装置。 处理液体可以包括用于电镀工具中的电镀液。 将处理液体供给到罐中。 处理液体的多个流从下方引导到处理液体的表面。 这可以通过将处理液体供给到包括多个开口的流量分配器来实现，该多个开口提供流量分配器的内部容积与罐的主体积之间的流动连通。 在离开水箱通过出口之前，工艺液体流过流动屏障。

公开(公告)号：US20090243109A1

公开(公告)日：2009-10-01

申请号：US12355840

申请日：2009-01-19

Applicant: Markus Nopper ,  Axel Preusse ,  Robert Seidel

Inventor： Markus Nopper ,  Axel Preusse ,  Robert Seidel

IPC: H01L23/522 ,  H01L21/768

CPC classification number: H01L23/53238 ,  H01L21/76814 ,  H01L21/76849 ,  H01L21/76861 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A conductive cap material for a copper region may be provided with enhanced etch resistivity by taking into consideration the standard electrode potential of one or more of the species contained therein. For example, instead of a conventionally used CoWP alloy, a modified alloy may be used, by substituting the cobalt species by a metallic species having a less negative standard electrode potential, such as nickel. Consequently, device performance may be enhanced, while at the same time the overall process complexity may be reduced.

Abstract translation: 考虑到其中包含的一种或多种物质的标准电极电位，可以提供用于铜区域的导电盖材料，其具有增强的蚀刻电阻率。 例如，代替常规使用的CoWP合金，可以通过用具有较小负极标准电极电位的金属物质例如镍代替钴物质来代替改进的合金。 因此，可以增强设备性能，同时可以减少整体过程的复杂性。

公开(公告)号：US07517782B2

公开(公告)日：2009-04-14

申请号：US11536041

申请日：2006-09-28

Applicant: Axel Preusse ,  Susanne Wehner ,  Markus Nopper

Inventor： Axel Preusse ,  Susanne Wehner ,  Markus Nopper

IPC: H01L21/20

CPC classification number: H01L21/288 ,  C23C18/1653 ,  C23C18/1671 ,  C23C18/31 ,  C25D5/18 ,  C25D5/34 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76873 ,  H01L21/76874 ,  H01L21/76877

Abstract: By performing an electroless deposition and an electro deposition process in situ, highly reliable metallizations may be provided, wherein limitations with respect to contaminations and device scaling, encountered by conventional chemical vapor deposition (CVD), atomic layer deposition (ALD) and physical vapor deposition (PVD) techniques for the formation of seed layers may be overcome. In some embodiments, a barrier layer is also deposited on the basis of a wet chemical deposition process.

Abstract translation: 通过原位进行无电沉积和电沉积工艺，可以提供高度可靠的金属化，其中通过常规化学气相沉积（CVD），原子层沉积（ALD）和物理气相沉积所遇到的污染和器件结垢的限制 （PVD）技术可以克服种子层的形成。 在一些实施例中，还基于湿化学沉积工艺沉积阻挡层。

公开(公告)号：US20090061629A1

公开(公告)日：2009-03-05

申请号：US12183858

申请日：2008-07-31

Applicant: Axel Preusse ,  Charlotte Emnet ,  Susanne Wehner

Inventor： Axel Preusse ,  Charlotte Emnet ,  Susanne Wehner

IPC: H01L21/44

CPC classification number: H01L21/76843 ,  H01L21/02068 ,  H01L21/288 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76877

Abstract: By suppressing the presence of free oxygen during a cleaning process and a subsequent electrochemical deposition of a seed layer, the quality of a corresponding interface between the barrier material and the seed layer may be enhanced, thereby also improving performance and the characteristics of the finally obtained metal region. Thus, by identifying free oxygen as a main source for negatively affecting the characteristics of metals during a “direct on barrier” plating process, efficient strategies have been developed and are disclosed herein to provide a reliable technique for volume production of sophisticated semiconductor devices.

Abstract translation: 通过抑制清洁过程中的游离氧的存在和种子层的随后的电化学沉积，可以增强阻挡材料和种子层之间的对应界面的质量，从而也提高最终获得的性能和特性 金属区域。 因此，通过在“直接在屏障”电镀工艺中识别游离氧作为负面影响金属特性的主要来源，已经开发了有效的策略并在此公开了提供用于批量生产复杂半导体器件的可靠技术。

公开(公告)号：US06951816B2

公开(公告)日：2005-10-04

申请号：US10602192

申请日：2003-06-24

Applicant: Markus Nopper ,  Axel Preusse

Inventor： Markus Nopper ,  Axel Preusse

IPC: H01L21/288 ,  H01L21/768 ,  H01L21/44

CPC classification number: H01L21/76843 ,  H01L21/288 ,  H01L21/76846 ,  H01L21/76859 ,  H01L21/76873 ,  H01L21/76874 ,  H01L2221/1089

Abstract: A metal layer is formed by means of an electroless plating process, wherein a surface region of an underlying material is catalytically activated in that a catalyst is deposited or incorporated by CVD, PVD or ALD during and/or after the deposition of the underlying material. In this way, superior metal seed layers may be formed even in high aspect ratio vias of metallization structures.

Abstract translation: 通过化学镀方法形成金属层，其中下层材料的表面区域被催化活化，因为催化剂在沉积下面的材料期间和/或之后沉积或通过CVD，PVD或ALD沉积。 以这种方式，即使在金属化结构的高纵横比通孔中也可形成优良的金属种子层。

公开(公告)号：US20050067290A1

公开(公告)日：2005-03-31

申请号：US10861997

申请日：2004-06-04

Applicant: Matthias Bonkass ,  Dirk Wollstein ,  Axel Preusse

Inventor： Matthias Bonkass ,  Dirk Wollstein ,  Axel Preusse

IPC: C25D21/12

CPC classification number: C25D21/12

Abstract: An electroplating tool is operated in combination with a controller which automatically determines the individual currents for a multi-anode configuration of the plating tool. The calculation of the anode currents may be based on sensitivity data and measurement data as well as on a desired target profile, so that a fast response with respect to process variations may be achieved even for a plating tool including a plurality of process chambers.

Abstract translation: 电镀工具与控制器一起操作，控制器自动确定电镀工具的多阳极配置的各个电流。 阳极电流的计算可以基于灵敏度数据和测量数据以及期望的目标轮廓，使得即使对于包括多个处理室的电镀工具也可以实现关于工艺变化的快速响应。

公开(公告)号：US20110244679A1

公开(公告)日：2011-10-06

申请号：US12962968

申请日：2010-12-08

Applicant: Axel Preusse ,  Norbert Schroeder ,  Uwe Stoeckgen

Inventor： Axel Preusse ,  Norbert Schroeder ,  Uwe Stoeckgen

IPC: H01L21/44

CPC classification number: H01L21/7684 ,  H01L21/76819 ,  H01L21/76879

Abstract: Contact elements in the contact level of a semiconductor device may be formed on the basis of a selective deposition technique, such as electroless plating, wherein an efficient planarization of the contact level is achieved without subjecting the contact elements to undue mechanical stress. In some illustrative embodiments, an overfilling of the contact openings may be reliably avoided and the planarization of the surface topography is accomplished on the basis of a non-critical polishing process. In other cases, electrochemical etch techniques are applied in combination with a conductive sacrificial current distribution layer in order to remove any excess material of the contact elements without inducing undue mechanical stress.

Abstract translation: 可以基于选择性沉积技术（例如化学镀）形成半导体器件的接触电平中的接触元件，其中在不使接触元件受到不适当的机械应力的情况下实现接触电平的有效平面化。 在一些示例性实施例中，可以可靠地避免接触开口的过度填充，并且基于非关键抛光工艺来实现表面形貌的平坦化。 在其他情况下，电化学蚀刻技术与导电牺牲电流分布层结合使用，以便去除接触元件的任何多余材料而不引起不适当的机械应力。