公开(公告)号：US20100289125A1

公开(公告)日：2010-11-18

申请号：US12769124

申请日：2010-04-28

申请人： Frank Feustel ,  Tobias Letz ,  Axel Preusse

发明人： Frank Feustel ,  Tobias Letz ,  Axel Preusse

IPC分类号： H01L23/48 ,  H01L21/441

CPC分类号： H01L21/76849 ,  H01L21/76867 ,  H01L23/53233 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： In sophisticated semiconductor devices, the electromigration performance of copper metal lines at the top interface thereof may be enhanced by forming a copper alloy that is locally restricted to the interface. To this end, an appropriate alloy-forming species, such as aluminum, may be provided on the basis of a non-masked deposition process and may be subsequently removed by a non-masked etch process, wherein the characteristic of the resulting alloy may be adjusted during an intermediate heat treatment.

摘要翻译： 在复杂的半导体器件中，可以通过形成局部限于界面的铜合金来增强铜金属线在其顶部界面处的电迁移性能。 为此，可以在非掩蔽沉积工艺的基础上提供合适的合金形成物质，例如铝，然后通过非掩模蚀刻工艺除去，其中所得合金的特征可以是 在中间热处理期间调整。

公开(公告)号：US08153524B2

公开(公告)日：2012-04-10

申请号：US12711373

申请日：2010-02-24

申请人： Oliver Aubel ,  Joerg Hohage ,  Frank Feustel ,  Axel Preusse

发明人： Oliver Aubel ,  Joerg Hohage ,  Frank Feustel ,  Axel Preusse

IPC分类号： H01L21/44

CPC分类号： H01L21/76826 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76828 ,  H01L21/76864 ,  Y10S438/906

摘要： During the formation of complex metallization systems, a conductive cap layer may be formed on a copper-containing metal region in order to enhance the electromigration behavior without negatively affecting the overall conductivity. At the same time, a thermo chemical treatment may be performed to provide superior surface conditions of the sensitive dielectric material and also to suppress carbon depletion, which may conventionally result in a significant variability of material characteristics of sensitive ULK materials.

摘要翻译： 在形成复杂的金属化系统期间，可以在含铜金属区域上形成导电覆盖层，以增强电迁移行为，而不会不利地影响总导电性。 同时，可以进行热化学处理以提供敏感电介质材料的优异的表面条件并且还抑制碳消耗，这常常导致敏感的ULK材料的材料特性的显着变化。

公开(公告)号：US20100221911A1

公开(公告)日：2010-09-02

申请号：US12711373

申请日：2010-02-24

申请人： Oliver Aubel ,  Joerg Hohage ,  Frank Feustel ,  Axel Preusse

发明人： Oliver Aubel ,  Joerg Hohage ,  Frank Feustel ,  Axel Preusse

IPC分类号： H01L21/768

CPC分类号： H01L21/76826 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76828 ,  H01L21/76864 ,  Y10S438/906

摘要： During the formation of complex metallization systems, a conductive cap layer may be formed on a copper-containing metal region in order to enhance the electromigration behavior without negatively affecting the overall conductivity. At the same time, a thermo chemical treatment may be performed to provide superior surface conditions of the sensitive dielectric material and also to suppress carbon depletion, which may conventionally result in a significant variability of material characteristics of sensitive ULK materials.

摘要翻译： 在形成复杂的金属化系统期间，可以在含铜金属区域上形成导电覆盖层，以增强电迁移行为，而不会不利地影响总导电性。 同时，可以进行热化学处理以提供敏感电介质材料的优异的表面条件并且还抑制碳消耗，这常常导致敏感的ULK材料的材料特性的显着变化。

公开(公告)号：US08450197B2

公开(公告)日：2013-05-28

申请号：US12962968

申请日：2010-12-08

申请人： Axel Preusse ,  Norbert Schroeder ,  Uwe Stoeckgen

发明人： Axel Preusse ,  Norbert Schroeder ,  Uwe Stoeckgen

IPC分类号： H01L21/20 ,  H01L21/4763 ,  H01L21/44

CPC分类号： H01L21/7684 ,  H01L21/76819 ,  H01L21/76879

摘要： Contact elements in the contact level of a semiconductor device may be formed on the basis of a selective deposition technique, such as electroless plating, wherein an efficient planarization of the contact level is achieved without subjecting the contact elements to undue mechanical stress. In some illustrative embodiments, an overfilling of the contact openings may be reliably avoided and the planarization of the surface topography is accomplished on the basis of a non-critical polishing process. In other cases, electrochemical etch techniques are applied in combination with a conductive sacrificial current distribution layer in order to remove any excess material of the contact elements without inducing undue mechanical stress.

摘要翻译： 可以基于选择性沉积技术（例如化学镀）形成半导体器件的接触电平中的接触元件，其中在不使接触元件受到不适当的机械应力的情况下实现接触电平的有效平面化。 在一些示例性实施例中，可以可靠地避免接触开口的过度填充，并且基于非关键抛光工艺来实现表面形貌的平坦化。 在其他情况下，电化学蚀刻技术与导电牺牲电流分布层结合使用，以便去除接触元件的任何多余材料而不引起不适当的机械应力。

公开(公告)号：US07981793B2

公开(公告)日：2011-07-19

申请号：US12045907

申请日：2008-03-11

申请人： Axel Preusse ,  Charlotte Emnet ,  Susanne Wehner

发明人： Axel Preusse ,  Charlotte Emnet ,  Susanne Wehner

IPC分类号： H01L21/44

CPC分类号： H01L21/76843 ,  H01L21/02068 ,  H01L21/288 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76877

摘要： By suppressing the presence of free oxygen during a cleaning process and a subsequent electrochemical deposition of a seed layer, the quality of a corresponding interface between the barrier material and the seed layer may be enhanced, thereby also improving performance and the characteristics of the finally obtained metal region. Thus, by identifying free oxygen as a main source for negatively affecting the characteristics of metals during a “direct on barrier” plating process, efficient strategies have been developed and are disclosed herein to provide a reliable technique for volume production of sophisticated semiconductor devices.

摘要翻译： 通过抑制清洁过程中的游离氧的存在和种子层的随后的电化学沉积，可以增强阻挡材料和种子层之间的对应界面的质量，从而也提高最终获得的性能和特性 金属区域。 因此，通过在“直接在屏障”电镀工艺中识别游离氧作为负面影响金属特性的主要来源，已经开发了有效的策略并在此公开了提供用于批量生产复杂半导体器件的可靠技术。

公开(公告)号：US07745327B2

公开(公告)日：2010-06-29

申请号：US11761444

申请日：2007-06-12

申请人： Axel Preusse ,  Michael Friedemann ,  Robert Seidel ,  Berit Freudenberg

发明人： Axel Preusse ,  Michael Friedemann ,  Robert Seidel ,  Berit Freudenberg

IPC分类号： H01L21/4763

CPC分类号： H01L23/53238 ,  H01L21/76802 ,  H01L21/76805 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L2924/0002 ,  H01L2924/00

摘要： By appropriately designing a plurality of deposition steps and intermediate sputter processes, the formation of a barrier material within a via opening may be accomplished on the basis of a highly efficient process strategy that readily integrates conductive cap layers formed above metal-containing regions into well-approved process sequences.

摘要翻译： 通过适当地设计多个沉积步骤和中间溅射工艺，通孔开口内的阻挡材料的形成可以基于高效的工艺策略来实现，该方法可以容易地将形成在含金属区域上方的导电盖层整合到井下， 批准的过程序列。

公开(公告)号：US20100133648A1

公开(公告)日：2010-06-03

申请号：US12604703

申请日：2009-10-23

申请人： Robert Seidel ,  Markus Nopper ,  Axel Preusse

发明人： Robert Seidel ,  Markus Nopper ,  Axel Preusse

IPC分类号： H01L29/06 ,  H01L21/764

CPC分类号： H01L21/7682 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76852 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： In sophisticated metallization systems, air gaps may be formed on the basis of a self-aligned patterning regime during which the conductive cap material of metal lines may be protected by providing one or more materials, which may subsequently be removed. Consequently, the etch behavior and the electrical characteristics of metal lines during the self-aligned patterning regime may be individually adjusted.

摘要翻译： 在复杂的金属化系统中，可以基于自对准图案化形态来形成气隙，在此期间金属线的导电盖材料可以通过提供一种或多种随后可以被去除的材料来保护。 因此，可以单独地调整在自对准图案化状态期间的金属线的蚀刻行为和电特性。

公开(公告)号：US07560381B2

公开(公告)日：2009-07-14

申请号：US11211786

申请日：2005-08-25

申请人： Markus Nopper ,  Axel Preusse ,  Matthias Bonkass

发明人： Markus Nopper ,  Axel Preusse ,  Matthias Bonkass

IPC分类号： H01L21/00

CPC分类号： C23C18/1879 ,  C23C18/1632 ,  C23C18/1678 ,  C23C18/1865 ,  C25D5/54 ,  H01L21/288

摘要： In an enhanced technique for electroless metal deposition, the substrate is heated to or above the operating temperature for the specific plating solution, while the plating solution may be maintained at a non-critical low temperature to substantially prevent spontaneous self-decomposition within the plating tool. Hence, significant advantages with respect to process control and cost of ownership may be achieved.

摘要翻译： 在用于无电金属沉积的增强技术中，将衬底加热至或高于特定电镀溶液的操作温度，同时电镀溶液可以保持在非临界低温以基本上防止电镀工具内的自发自分解 。 因此，可以实现在过程控制和所有权成本方面的显着优点。

公开(公告)号：US20070166982A1

公开(公告)日：2007-07-19

申请号：US11536041

申请日：2006-09-28

申请人： Axel Preusse ,  Susanne Wehner ,  Markus Nopper

发明人： Axel Preusse ,  Susanne Wehner ,  Markus Nopper

IPC分类号： H01L21/44

CPC分类号： H01L21/288 ,  C23C18/1653 ,  C23C18/1671 ,  C23C18/31 ,  C25D5/18 ,  C25D5/34 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76873 ,  H01L21/76874 ,  H01L21/76877

摘要： By performing an electroless deposition and an electro deposition process in situ, highly reliable metallizations may be provided, wherein limitations with respect to contaminations and device scaling, encountered by conventional chemical vapor deposition (CVD), atomic layer deposition (ALD) and physical vapor deposition (PVD) techniques for the formation of seed layers may be overcome. In some embodiments, a barrier layer is also deposited on the basis of a wet chemical deposition process.

摘要翻译： 通过原位进行无电沉积和电沉积工艺，可以提供高度可靠的金属化，其中通过常规化学气相沉积（CVD），原子层沉积（ALD）和物理气相沉积所遇到的污染和器件结垢的限制 （PVD）技术可以克服种子层的形成。 在一些实施例中，还基于湿化学沉积工艺沉积阻挡层。

公开(公告)号：US06958247B2

公开(公告)日：2005-10-25

申请号：US10666195

申请日：2003-09-19

申请人： Gerd Marxsen ,  Axel Preusse ,  Markus Nopper ,  Frank Mauersberger

发明人： Gerd Marxsen ,  Axel Preusse ,  Markus Nopper ,  Frank Mauersberger

IPC分类号： H01L21/288 ,  H01L21/768 ,  H01L21/461 ,  H01L21/4763

CPC分类号： H01L21/2885 ,  H01L21/7684 ,  H01L21/76877

摘要： In a new method of plating metal onto dielectric layers including small diameter vias and large diameter trenches, a surface roughness is created at least on non-patterned regions of the dielectric layer to enhance the uniformity of material removal in a subsequent chemical mechanical polishing (CMP) process.

摘要翻译： 在将金属电镀到包括小直径通孔和大直径沟槽的电介质层上的新方法中，至少在电介质层的非图案化区域上产生表面粗糙度，以增强后续化学机械抛光（CMP）中材料去除的均匀性 ）过程。