公开(公告)号：US20210380750A1

公开(公告)日：2021-12-09

申请号：US17297276

申请日：2019-11-27

Applicant: BASF SE

Inventor： Stephan SALZINGER ,  Robert REICHARDT

IPC: C08G18/08 ,  C08G18/48 ,  C08G18/28 ,  C08G18/75 ,  C08G18/22 ,  C08G18/20 ,  C09D175/04

Abstract: The presently claimed invention provides a continuous process for preparing a polyurethane composition which behaves as a rheology modifier upon addition to paint and coating formulations. The present process employs mixers for homogenization of highly viscous polyurethane polymers and by adjusting the process parameters and reactor conditions in specified ranges obtained a polyurethane composition. The polyurethane composition obtained from the process of the present invention is used as thickener in water-borne paint and coating formulations.

公开(公告)号：US20200255713A1

公开(公告)日：2020-08-13

申请号：US16860793

申请日：2020-04-28

Applicant: BASF SE

Inventor： Robert REICHARDT ,  Martin Kaller ,  Michael Lauter ,  Yuzhuo Li ,  Andreas Klipp

IPC: C09K3/14 ,  H01L21/304 ,  H01L21/306 ,  H01L21/461 ,  H01L21/321 ,  C09G1/02

Abstract: A chemical-mechanical polishing (CMP) composition is provided comprising (A) one or more compounds selected from the group of benzotriazole derivatives which act as corrosion inhibitors and (B) inorganic particles, organic particles, or a composite or mixture thereof. The invention also relates to the use of certain compounds selected from the group of benzotriazole derivatives as corrosion inhibitors, especially for increasing the selectivity of a chemical mechanical polishing (CMP) composition for the removal of tantalum or tantalum nitride from a substrate for the manufacture of a semiconductor device in the presence of copper on said substrate.

公开(公告)号：US20170369743A1

公开(公告)日：2017-12-28

申请号：US15536447

申请日：2015-12-04

Applicant: BASF SE

Inventor： Max SIEBERT ,  Michael LAUTER ,  Yongqing LAN ,  Robert REICHARDT ,  Alexandra MUENCH ,  Manuel SIX ,  Gerald DANIEL ,  Bastian Marten NOLLER ,  Kevin HUANG ,  Sheik Ansar USMAN IBRAHIM

IPC: C09G1/04 ,  H01L21/304 ,  C09K13/00 ,  H01L21/461 ,  C09G1/02

CPC classification number: C09G1/04 ,  C09G1/02 ,  C09K13/00 ,  H01L21/304 ,  H01L21/461

Abstract: Disclosed herein is a chemical mechanical polishing (CMP) composition (Q) containing (A) inorganic particles, (B) a compound of general formula (I) below, and (C) an aqueous medium, in which the composition (Q) has a pH of from 2 to 6.

公开(公告)号：US20170369741A1

公开(公告)日：2017-12-28

申请号：US15538334

申请日：2015-12-11

Applicant: BASF SE

Inventor： Robert REICHARDT ,  Max SIEBERT ,  Yongqing LAN ,  Michael LAUTER ,  Sheik Ansar USMAN IBRAHIM ,  Reza GOLZARIAN ,  Haci Osman GUEVENC ,  Julian PROELSS ,  Leonardus LEUNISSEN

IPC: C09G1/02 ,  C09G1/04 ,  C09K13/00 ,  H01L21/461

CPC classification number: C09G1/02 ,  C09G1/04 ,  C09K13/00 ,  H01L21/461

Abstract: Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) comprises (A) Inorganic particles (B) a triazine derivative of the general formula (I) wherein R1, R2, R3, R4, R5 and R6 are independently from each other H, methyl, ethyl, propyl, butyl, pentyl, C2-C10-alkylcarboxylic acid, hydroxymethyl, vinyl or allyl (C) at least one amino acid, (D) at least one oxidizer (E) an aqueous medium and wherein the CMP composition (Q) has a pH of from 7 to 10.

公开(公告)号：US20140011362A1

公开(公告)日：2014-01-09

申请号：US13935682

申请日：2013-07-05

Applicant: BASF SE

Inventor： Robert REICHARDT ,  Yuzhuo LI ,  Michael LAUTER

IPC: C09G1/02 ,  H01L21/306

CPC classification number: C09G1/02 ,  C08K5/09 ,  C08K7/00 ,  H01L21/30625 ,  H01L21/3212

Abstract: A chemical mechanical polishing (CMP) composition (Q) comprising (A) Inorganic particles, organic particles, or a mixture or composite thereof, wherein the particles are cocoon-shaped (B) a non-ionic surfactant, (C) an aromatic compound comprising at least one acid group (Y), or a salt thereof, and (M) an aqueous medium.

Abstract translation: 一种化学机械抛光（CMP）组合物（Q），其包含（A）无机颗粒，有机颗粒或其混合物或复合物，其中所述颗粒为茧形（B）非离子表面活性剂，（C）芳族化合物 包含至少一个酸基（Y）或其盐，和（M）水性介质。