公开(公告)号：US20240355978A1

公开(公告)日：2024-10-24

申请号：US18254210

申请日：2022-04-21

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Nianqi YAO ,  Zhongpeng TIAN ,  Ce NING ,  Zhengliang LI ,  Hehe HU ,  Jie HUANG ,  Jiayu HE ,  Feifei LI ,  Kun ZHAO ,  Yimin CHEN

IPC: H01L33/62 ,  G02F1/13357 ,  H05K3/46

CPC classification number: H01L33/62 ,  G02F1/133603 ,  H05K3/4688

Abstract: A circuit board includes a substrate and a stress neutral layer disposed on a side of the substrate. The stress neutral layer includes one or more first metal layers and one or more second metal layers. The one or more second metal layers and the one or more first metal layers are stacked. At least one of the one or more first metal layers is made of a material for generating a tensile stress, and at least one of the one or more second metal layers is made of a material for generating a compressive stress.

公开(公告)号：US20240244747A1

公开(公告)日：2024-07-18

申请号：US17927576

申请日：2021-12-31

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Nianqi YAO ,  Feifei LI ,  Ce NING ,  Zhengliang LI ,  Hehe HU ,  Jiayu HE ,  Jie HUANG ,  Kun ZHAO ,  Zhanfeng CAO ,  Ke WANG

IPC: H05K1/11 ,  H01L23/498 ,  H01L33/62 ,  H05K1/09 ,  H05K1/18

CPC classification number: H05K1/111 ,  H01L23/49838 ,  H01L33/62 ,  H05K1/09 ,  H05K1/181 ,  H05K2201/0338 ,  H05K2201/10106 ,  H05K2201/10151

Abstract: A wiring board includes a base substrate and first connection pads disposed on the base substrate. The first connection pads each include electrical connection layer(s); each electrical connection layer includes a main material layer and protective layer(s) disposed on a side of the main material layer away from the base substrate; the protective layer(s) include a first reference protective layer, which is a protective layer farthest away from the base substrate in the protective layer(s); and a material of the main material layer includes copper. The electrical connection layer(s) includes a first electrical connection layer, which is an electrical connection layer farthest away from the base substrate in the electrical connection layer(s); and in protective layer(s) in the first electrical connection layer, at least a material of the first reference protective layer is capable of forming a first intermetallic compound with a first solder.

公开(公告)号：US20240186330A1

公开(公告)日：2024-06-06

申请号：US17786177

申请日：2021-08-26

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jiayu HE ,  Ce NING ,  Zhengliang LI ,  Hehe HU ,  Jie HUANG ,  Nianqi YAO ,  Kun ZHAO ,  Feifei LI ,  Liping LEI ,  Qi QI

IPC: H01L27/12

CPC classification number: H01L27/124

Abstract: Embodiments of the present disclosure provide an array substrate and a display apparatus. The array substrate includes: a base substrate; a conductive layer located on the base substrate, where a material of the conductive layer includes copper; and an oxidization protective layer, located on a side, facing away from the base substrate, of the conductive layer, where a material of the oxidization protective layer includes tungsten.

公开(公告)号：US20240379631A1

公开(公告)日：2024-11-14

申请号：US18691021

申请日：2021-10-22

Applicant: BOE Technology Group Co., Ltd.

Inventor： Nianqi YAO ,  Jin YANG ,  Ce NING ,  Jiayu HE ,  Jie HUANG ,  Hehe HU ,  Kun ZHAO ,  Feifei LI ,  Zhengliang LI ,  Guangcai YUAN

IPC: H01L27/12 ,  H01L25/16 ,  H01L33/62

Abstract: A light-emitting substrate and a display device are disclosed, the light-emitting substrate includes: a base substrate including a light-emitting region; a plurality of first pads on a side of the base substrate and in the light-emitting region, where a material of the first pads includes Cu; and an oxidation protection layer on a side of the first pads away from the base substrate, where the plurality of first pads is used for bonding connection with a plurality of light-emitting units through the oxidation protection layer, a material of the oxidation protection layer includes CuNiX, and X includes one or any combination of Al, Sn, Pb, Au, Ag, In, Zn, Bi, Mg, Ga, V, W, Y, Zr, Mo, Nb, Pt, Co or Sb.

公开(公告)号：US20240297243A1

公开(公告)日：2024-09-05

申请号：US18026833

申请日：2022-05-27

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jiayu HE ,  Yan QU ,  Ce NING ,  Hehe HU ,  Zhengliang LI ,  Nianqi YAO ,  Jie HUANG ,  Kun ZHAO ,  Feifei LI ,  Liping LEI

IPC: H01L29/739 ,  H01L27/092 ,  H01L29/08 ,  H01L29/165 ,  H01L29/66 ,  H01L29/73

CPC classification number: H01L29/7391 ,  H01L27/092 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/66356 ,  H01L29/7311

Abstract: A tunneling field effect transistor includes a gate electrode, a tunneling field active layer, a first electrode, and a second electrode disposed on a base substrate; the tunneling field active layer includes a first-type active layer and a second-type active layer that are stacked, wherein the first-type active layer includes a first-type channel region and a first source-drain region, the second-type active layer includes a second-type channel region and a second source-drain region, an orthographic projection of the first-type channel region on the base substrate is completely overlapped with an orthographic projection of the second-type channel region on the base substrate, the first source-drain region is located at a side of the tunneling field active layer and is connected with the first electrode.

公开(公告)号：US20240234658A1

公开(公告)日：2024-07-11

申请号：US17927792

申请日：2021-12-29

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jiayu HE ,  Yan QU ,  Ce NING ,  Zhengliang LI ,  Hehe HU ,  Jie HUANG ,  Nianqi YAO ,  Kun ZHAO ,  Feifei LI ,  Qi QI

IPC: H01L33/62 ,  H01L25/075 ,  H01L25/16 ,  H01L27/12

CPC classification number: H01L33/62 ,  H01L25/0753 ,  H01L25/167 ,  H01L27/124

Abstract: A wiring board includes a substrate, conductive pads and at least one protective layer group. The conductive pads are disposed on the substrate. The at least one protective layer group is disposed on a side of the conductive pads away from the substrate; a protective layer group includes an oxidation protective layer and a palladium alloy layer that are stacked, and the oxidation protective layer is closer to the substrate than the palladium alloy layer. A material of the oxidation protective layer includes a nickel-based alloy.

公开(公告)号：US20240204004A1

公开(公告)日：2024-06-20

申请号：US17910133

申请日：2021-12-27

Applicant: BOE Technology Group Co., Ltd.

Inventor： Hehe HU ,  Yan QU ,  Jiayu HE ,  Kun ZHAO ,  Jie HUANG ,  Zhengliang LI ,  Ce NING ,  Dongfang WANG ,  Fengjuan LIU ,  Nianqi YAO ,  Feifei LI ,  Shunhang ZHANG ,  Yunsik IM ,  Liping LEI

IPC: H01L27/12

CPC classification number: H01L27/124 ,  H01L27/1259 ,  H01L27/1222

Abstract: Provided are a thin-film transistor and a manufacturing method thereof, and a display substrate, belonging to the technical field of thin-film transistors. The thin-film transistor includes: a base substrate; a gate electrode on the base substrate; an active layer on a side of the gate electrode away from the base substrate, an orthographic projection of the active layer onto the base substrate overlapping with an orthographic projection of the gate electrode onto the base substrate; and a first electrode and a second electrode on a side of the active layer away from the base substrate, the first electrode being one of a source electrode and a drain electrode, and the second electrode being the other of the source electrode and the drain electrode. Specifically the active layer includes a channel region corresponding to a gap between the first electrode and the second electrode, and a width direction of the channel region is perpendicular or substantially perpendicular to an extending direction of the gate electrode. According to the embodiments of the present disclosure, the illumination stability of the thin-film transistor can be improved without reducing the transmittance of the substrate.

公开(公告)号：US20240188373A1

公开(公告)日：2024-06-06

申请号：US17795243

申请日：2021-09-30

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jiayu HE ,  Ce NING ,  Zhengliang LI ,  Hehe HU ,  Jie HUANG ,  Nianqi YAO ,  Kun ZHAO ,  Feifei LI ,  Liping LEI ,  Qi QI

IPC: H10K59/65 ,  H10K59/12 ,  H10K59/121 ,  H10K59/80 ,  H10K71/00

CPC classification number: H10K59/65 ,  H10K59/1201 ,  H10K59/1213 ,  H10K59/874 ,  H10K71/00

Abstract: Provided is a display substrate including a substrate and a plurality of light emitting units and a plurality of light detection units located on the substrate, At least one light emitting unit includes a light emitting element and a pixel circuit connected to the light emitting element, and at least one light detection unit includes an optical sensing element and a light emitting detecting circuit connected to the optical sensing element. At least one inorganic hydrogen barrier layer is arranged on one side of the optical sensing element close to the substrate. The light emitting element has a first light emitting region and a second light emitting region, the first light emitting region of the light emitting element emits light from a side away from the substrate, and the second light emitting region of the light emitting element emits light from a side close to the substrate.

公开(公告)号：US20240332425A1

公开(公告)日：2024-10-03

申请号：US18028009

申请日：2022-03-30

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jiayu HE ,  Fangqing WEN ,  Ce NING ,  Hehe HU ,  Nianqi YAO ,  Kun ZHAO ,  Zhengliang LI ,  Jie HUANG ,  Feifei LI ,  Yan QU ,  Liping LEI

IPC: H01L29/786 ,  H01L25/07

CPC classification number: H01L29/7869 ,  H01L25/074

Abstract: The present disclosure provides a metal oxide thin film transistor, a semiconductor device and a display device, belongs to the field of display technology, and can solve a problem that current metal oxide thin film transistors have a poor stability. The metal oxide thin film transistor of the present disclosure includes a substrate and a first metal oxide semiconductor layer on the substrate; a material of the first metal oxide semiconductor layer includes a metal oxide doped with a first metal element, an electronegativity difference value between the first metal element and an oxygen element is greater than or equal to an electronegativity difference value between a metal element in the metal oxide and the oxygen element.

公开(公告)号：US20240304698A1

公开(公告)日：2024-09-12

申请号：US18028114

申请日：2022-03-30

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jiayu HE ,  Yan QU ,  Liping LEI ,  Ce NING ,  Zhengliang LI ,  Hehe HU ,  Jie HUANG ,  Nianqi YAO ,  Kun ZHAO ,  Feifei LI

IPC: H01L29/49 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/786

CPC classification number: H01L29/4908 ,  G02F1/1368 ,  H01L27/1225 ,  H01L29/7869 ,  H01L29/78696

Abstract: There is provided a metal oxide thin film transistor, including: a substrate and a metal oxide semiconductor layer on the substrate; a gate and a gate insulating layer between the substrate and the metal oxide semiconductor layer; the gate insulating layer includes a first silicon nitride layer, a second silicon nitride layer and a first silicon oxide layer which are stacked; the first silicon oxide layer is in contact with the metal oxide semiconductor layer, and two surfaces of the second silicon nitride layer are in contact with the first silicon nitride layer and the first silicon oxide layer, respectively; a content of hydrogen atoms of at least a partial region of the second silicon nitride layer is less than 30% of a content of hydrogen atoms of at least a partial region of the first silicon nitride layer. An array substrate and a display device are further provided.