摘要:
A system for measuring surface features having form birefringence in accordance with the present invention includes a radiation source for providing radiation incident on a surface having surface features. A radiation detecting device is provided for measuring characteristics of the incident radiation after being reflected from the surface features. A rotating stage rotates the surface such that incident light is directed at different angles due to the rotation of the rotating stage. A processor is included for processing the measured characteristics of the reflected light and correlating the characteristics to measure the surface features. A method for measuring feature sizes having form birefringence, in accordance with the present invention includes the steps of providing a surface having surface features thereon, radiating the surface features with light having a first polarization, measuring a reflected polarization of light reflected from the surface features, rotating the surface features by rotating the surface to measure the reflected polarization of the reflected light at least one new rotated position and correlating the reflected polarization to surface feature sizes.
摘要:
A tip of an electron beam source includes a core carrying a coating. The coating is formed from a material having a greater electrical conductivity than a material forming the surface of the core.
摘要:
A method for the characterization of a film arranged in a plurality of regions on a substrate forms a respective optical measurement at each of a multiplicity of measurement sites in order to determine a respective measurement result, the measurement result being correlated with a film thickness on the substrate. Measurement results that satisfy a predetermined condition, which is satisfied for a measurement result that has been determined at a measurement site within one of the plurality of regions are selected. The film is characterized on the basis of the selected measurement results.
摘要:
An apparatus and method for measuring feature sizes having form birefringence. The method includes providing a surface having surface features thereon; radiating the surface features with light having a first wavelength and a first polarization; measuring a reflected polarization of light having the first wavelength reflected from the surface features; rotating the surface features by rotating the surface to measure the reflected polarization of the reflected light having the first wavelength at least one new rotated position; radiating the surface features with light having a second wavelength and the first polarization; measuring a reflected polarization of light having the second wavelength reflected from the surface features; rotating the surface features by rotating the surface to measure the reflected polarization of the reflected light having the second wavelength at least one new rotated position; and correlating the reflected polarization from the light having the first and second polarizations to surface feature sizes.
摘要:
The present invention relates to a method for the depth-resolved characterization of a layer of a carrier. This involves firstly producing a cutout in the layer of the carrier with a sidewall and subsequently removing carrier material adjoining the sidewall with the aid of an ion beam. During the removal process, images of the sidewall are recorded and material compositions of the removed carrier material are determined as well. A depth-resolved characterization of the layer of the carrier is carried out on the basis of a correlation of the determined material compositions of the removed carrier material with the recorded images of the sidewall, layer depths being assigned to the material compositions of the removed carrier material with the aid of the images of the sidewall. The invention furthermore relates to an apparatus for carrying out this method.
摘要:
In order to monitor the etching operation for a regular depth structure in a semiconductor substrate, a radiation source is used to irradiate, in large-area fashion, the semiconductor substrate in the region of the depth structure during the etching operation at a predetermined angle of incidence with respect to the surface of the semiconductor substrate with an electromagnetic radiation whose wavelength lies in the infrared region, a radiation detector is used to continuously detect the intensity of the reflected radiation at an angle of reflection—corresponding to the angle of incidence—with respect to the surface of the semiconductor substrate, and an evaluation unit is used to determine the depth of the etched structure and/or the quality of the etched structure with regard to the regularity thereof from the recorded intensity profile.
摘要:
A tip of an electron beam source includes a core carrying a coating. The coating is formed from a material having a greater electrical conductivity than a material forming the surface of the core.
摘要:
A tip of an electron beam source includes a core carrying a coating. The coating is formed from a material having a greater electrical conductivity than a material forming the surface of the core.
摘要:
A method for the characterization of a film arranged in a plurality of regions on a substrate forms a respective optical measurement at each of a multiplicity of measurement sites in order to determine a respective measurement result, the measurement result being correlated with a film thickness on the substrate. Measurement results that satisfy a predetermined condition, which is satisfied for a measurement result that has been determined at a measurement site within one of the plurality of regions are selected. The film is characterized on the basis of the selected measurement results.
摘要:
The invention relates to a method for noninvasively characterizing embedded micropatterns which are hidden under the surface of a wafer down to 100 μm. The micropatterns are identified with reference micropatterns from a previously produced reference library with the aid of their specific ellipsometric parameters.