公开(公告)号：US07180125B2

公开(公告)日：2007-02-20

申请号：US10962288

申请日：2004-10-08

Applicant: Chih-Hsin Wang

Inventor： Chih-Hsin Wang

IPC: H01L29/788

CPC classification number: G11C16/0416 ,  G11C16/14 ,  H01L29/42332 ,  H01L29/7885 ,  H01L29/792

Abstract: A nonvolatile memory cell is provided. The memory cell comprises a storage transistor and an injector in a semiconductor substrate of a p-type conductivity. The injector comprises a first region of the p-type conductivity and a second region of an n-type conductivity. The storage transistor comprises a source, a drain, a channel, a charge storage region, and a control gate. The source and the drain have the p-type conductivity and are formed in a well of the n-type conductivity in the substrate with the channel of the well defined therebetween. The charge storage region is disposed over and insulated from the channel by a first insulator. The control gate is disposed over and insulated from the charge storage region by a second insulator. Further provided are methods operating the memory cell, including means for injecting electrons from the channel through the first insulator onto the charge storage region and means for injecting holes from the injector through the well through the channel through the first insulator onto the charge storage region.

Abstract translation: 提供非易失性存储单元。 存储单元包括p型导电性的半导体衬底中的存储晶体管和注入器。 注射器包括p型导电性的第一区域和n型导电性的第二区域。 存储晶体管包括源极，漏极，沟道，电荷存储区域和控制栅极。 源极和漏极具有p型导电性，并且形成在衬底中的n型导电性的阱中，阱之间的沟道被限定。 电荷存储区域通过第一绝缘体设置在沟道之上并与沟道绝缘。 控制栅极通过第二绝缘体设置在电荷存储区域之上并与电荷存储区域绝缘。 还提供了操作存储单元的方法，包括用于将电子从通道中通过第一绝缘体注入到电荷存储区上的装置，以及用于将来自注射器的孔穿过阱通过穿过第一绝缘体的沟道注入到电荷存储区上的装置。

公开(公告)号：US20070008778A1

公开(公告)日：2007-01-11

申请号：US11464404

申请日：2006-09-25

Applicant: Chih-Hsin Wang

Inventor： Chih-Hsin Wang

IPC: G11C16/04

CPC classification number: G11C16/3418 ,  G11C16/3427

Abstract: Methods and apparatus on charges injection using piezo-ballistic-charges injection mechanism are provided for semiconductor device and nonvolatile memory device. The device comprises a strain source, an injection filter, a first conductive region, a second conductive region, and a third conductive region. The strain source permits piezo-effect in ballistic charges transport to enable the piezo-ballistic-charges injection mechanism in device operations. The injection filter permits transporting of charge carriers of one polarity type from the first conductive region, through the filter, and through the second conductive region to the third conductive region while blocking the transport of charge carriers of an opposite polarity from the second conductive region to the first conductive region. The present invention further provides an energy band engineering method permitting the devices be operated without suffering from disturbs, from dielectric breakdown, from impact ionization, and from undesirable RC effects.

Abstract translation: 为半导体器件和非易失性存储器件提供使用压电弹药注入机构的电荷注入的方法和装置。 该装置包括应变源，注射过滤器，第一导电区域，第二导电区域和第三导电区域。 应变源允许在弹道电荷输送中的压电效应，使得能够在器件操作中实现压电弹药注入机制。 注入过滤器允许将一种极性类型的电荷载体从第一导电区域通过滤波器传输，并且通过第二导电区域传输到第三导电区域，同时阻止相反极性的电荷载体从第二导电区域传输到 第一导电区域。 本发明进一步提供一种能量带工程方法，其允许在不受到电介质击穿，不受冲击电离和不期望的RC影响的干扰的情况下操作装置。

公开(公告)号：US20060289924A1

公开(公告)日：2006-12-28

申请号：US11234646

申请日：2005-09-23

Applicant: Chih-Hsin Wang

Inventor： Chih-Hsin Wang

IPC: H01L29/788

CPC classification number: H01L27/11568 ,  G11C16/0416 ,  G11C16/0466 ,  H01L21/26586 ,  H01L21/28273 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/42324 ,  H01L29/42336 ,  H01L29/47 ,  H01L29/66636 ,  H01L29/66825 ,  H01L29/7881 ,  H01L29/7883 ,  H01L29/792

Abstract: Nonvolatile memory cells having a conductor-filter system, a conductor-insulator system, and a charge-injection system are provided. The conductor-filter system provides band-pass filtering function, charge-filtering function, and mass-filtering function to charge-carriers flows. The conductor-insulator system provides Image-Force barrier lowering effect to collect charge-carriers. The charge-injection system includes the conductor-filter system and the conductor-insulator system, wherein the filter of the conductor-filter system contacts the conductor of the conductor-insulator system. Apparatus on cell architecture are provided for the nonvolatile memory cells. Additionally, apparatus on array architectures are provided for constructing the nonvolatile memory cells in memory array. Method on manufacturing such memory cells and array architectures are provided.

Abstract translation: 提供具有导体滤波器系统，导体 - 绝缘体系统和电荷注入系统的非易失性存储单元。 导体滤波器系统为电荷载流子提供带通滤波功能，电荷滤波功能和质量滤波功能。 导体 - 绝缘体系统提供图像强制屏障降低效应以收集电荷载体。 电荷注入系统包括导体 - 滤波器系统和导体 - 绝缘体系统，其中导体 - 滤波器系统的滤波器接触导体 - 绝缘体系统的导体。 为非易失性存储单元提供了单元结构的装置。 此外，提供了阵列架构上的装置用于构建存储器阵列中的非易失性存储单元。 提供了制造这种存储单元和阵列架构的方法。

公开(公告)号：US07115942B2

公开(公告)日：2006-10-03

申请号：US11007907

申请日：2004-12-08

Applicant: Chih-Hsin Wang

Inventor： Chih-Hsin Wang

IPC: H01L29/76 ,  G11C16/04

CPC classification number: H01L27/11568 ,  G11C16/0416 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/42324 ,  H01L29/7881 ,  H01L29/7883 ,  H01L29/792

Abstract: Method and apparatus on charges injection using piezo-ballistic-charges injection mechanism are provided for nonvolatile memory device. The device has a strain source, an injection filter, a tunneling gate, a ballistic gate, a charge storage region, a source, and a drain with a channel defined between the source and drain. The strain source permits piezo-effect in ballistic charges transport to enable the piezo-ballistic-charges injection mechanism. The injection filter permits transporting of charge carriers of one polarity type from the tunneling gate through the blocking material and the ballistic gate to the charge storage region while blocking the transport of charge carriers of an opposite polarity from the ballistic gate to the tunneling gate. The present invention further provides an energy band engineering method permitting the memory device be operated without suffering from disturbs, from dielectric breakdown, from impact ionization, and from undesirable RC effects.

Abstract translation: 为非易失性存储器件提供使用压电弹药注入机构的电荷注入的方法和装置。 该装置具有在源极和漏极之间限定的通道的应变源，注入滤波器，隧道栅极，弹道栅极，电荷存储区域，源极和漏极。 应变源允许弹道电荷输送中的压电效应，以实现压电弹药注入机制。 注入过滤器允许将一种极性类型的电荷载体从隧道栅极通过阻挡材料和防弹门传送到电荷存储区域，同时阻止相反极性的电荷载体从弹道栅极传输到隧道栅极。 本发明进一步提供一种能量带工程方法，其允许存储器件在不遭受电介质击穿的影响，不受冲击电离以及不期望的RC影响的情况下操作。

公开(公告)号：US20060214794A1

公开(公告)日：2006-09-28

申请号：US11168747

申请日：2005-06-28

Applicant: Chih-Hsin Wang

Inventor： Chih-Hsin Wang

IPC: G08B13/14

CPC classification number: H01L23/544 ,  G06Q10/00 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L2223/54433 ,  H01L2223/54446 ,  H01L2223/54486 ,  H01L2224/32057 ,  H01L2224/32225 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/83385 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/0106 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19107 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05599

Abstract: A system for tracking elements employing fixed tags that are permanently attached internally or externally to elements. The tags include radio-frequency (RF) communication units that have wireless communication with RF communicators. The wireless communications between the RF tags and the RF communicators operate with a tag communication protocol that defines the operations and sequences for storing information into and retrieval of information from tags. Each communicator has a processor for controlling a security routine with the tag. Each tag has a tag memory having storage locations for storing security information, a controller for accessing the tag memory to access security information in response to the security routine and an I/O unit for electronic communication with the controller and for RF communication with the communicator.

Abstract translation: 用于跟踪元件的系统，该元件采用固定标签，其永久地附接到元件的内部或外部。 这些标签包括与RF通信器进行无线通信的射频（RF）通信单元。 RF标签和RF通信器之间的无线通信使用标签通信协议进行操作，标签通信协议定义用于将信息存储到标签中并从其检索信息的操作和序列。 每个通信器具有用于利用标签来控制安全例程的处理器。 每个标签具有标签存储器，其具有用于存储安全信息的存储位置，用于访问标签存储器以响应于安全程序访问安全信息的控制器和用于与控制器的电子通信的I / O单元以及用于与通信器的RF通信 。

公开(公告)号：US20060017091A1

公开(公告)日：2006-01-26

申请号：US11007907

申请日：2004-12-08

Applicant: Chih-Hsin Wang

Inventor： Chih-Hsin Wang

IPC: H01L29/94

CPC classification number: H01L27/11568 ,  G11C16/0416 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/42324 ,  H01L29/7881 ,  H01L29/7883 ,  H01L29/792

Abstract: Method and apparatus on charges injection using piezo-ballistic-charges injection mechanism are provided for nonvolatile memory device. The device has a strain source, an injection filter, a tunneling gate, a ballistic gate, a charge storage region, a source, and a drain with a channel defined between the source and drain. The strain source permits piezo-effect in ballistic charges transport to enable the piezo-ballistic-charges injection mechanism. The injection filter permits transporting of charge carriers of one polarity type from the tunneling gate through the blocking material and the ballistic gate to the charge storage region while blocking the transport of charge carriers of an opposite polarity from the ballistic gate to the tunneling gate. The present invention further provides an energy band engineering method permitting the memory device be operated without suffering from disturbs, from dielectric breakdown, from impact ionization, and from undesirable RC effects.

公开(公告)号：US08113436B2

公开(公告)日：2012-02-14

申请号：US12573485

申请日：2009-10-05

Applicant: Chih-Hsin Wang

Inventor： Chih-Hsin Wang

IPC: G06K19/06

CPC classification number: G06K19/07749 ,  G06K19/0723 ,  G06Q10/00 ,  H01L23/544 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L2223/54433 ,  H01L2223/54446 ,  H01L2223/54486 ,  H01L2223/6677 ,  H01L2224/05554 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/32057 ,  H01L2224/32225 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/4813 ,  H01L2224/48227 ,  H01L2224/4911 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/83385 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01055 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/01327 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19107 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01Q1/2283 ,  H01Q7/00 ,  H01Q9/26 ,  H01Q9/28 ,  H01Q9/285 ,  H01Q23/00 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/01026 ,  H01L2924/00

Abstract: In one embodiment, a structure includes a semiconductor chip including a communication element for performing a wireless communication function where the communication element has a communication core occupying a region of the semiconductor chip, a plurality of chip pads with two of the chip pads electrically connected to the communication core; a chip carrier for carrying the semiconductor chip where the chip carrier includes a plurality of carrier pads with two of the carrier pads connected to the two chip pads; and an antenna connected to the carrier pads and electrically connected to the chip pads and to the communication core.

Abstract translation: 在一个实施例中，结构包括半导体芯片，其包括用于执行无线通信功能的通信元件，其中通信元件具有占据半导体芯片的区域的通信芯片，多个芯片焊盘，其中两个芯片焊盘电连接到 通讯核心; 用于承载半导体芯片的芯片载体，其中芯片载体包括多个载体焊盘，其中两个载体焊盘连接到两个芯片焊盘; 以及连接到载体焊盘并电连接到芯片焊盘和通信芯的天线。

公开(公告)号：US07948810B1

公开(公告)日：2011-05-24

申请号：US12250021

申请日：2008-10-13

Applicant: Qiang Tang ,  Bo Wang ,  Chih-Hsin Wang

Inventor： Qiang Tang ,  Bo Wang ,  Chih-Hsin Wang

IPC: G11C7/00

CPC classification number: G11C7/1078 ,  G11C7/1084 ,  H03K3/356052 ,  H03K3/356113

Abstract: A level shifter includes a level shifter module that receives a first input signal having high and low states and at least one voltage supply signal, and that generates a latch control signal based on the high and low states of the first input signal. A latch module receives the latch control signal, a data input signal, and the at least one voltage supply signal. The latch module selectively stores data associated with the data input signal based on the latch control signal. The latch module selectively changes the at least one voltage supply signal from a first level to a second level and outputs the data according to the second level based on the latch control signal.

Abstract translation: 电平移位器包括电平移位器模块，其接收具有高和低状态的第一输入信号和至少一个电压供应信号，并且基于第一输入信号的高和低状态产生锁存控制信号。 锁存模块接收锁存控制信号，数据输入信号和至少一个电压供应信号。 锁存模块基于锁存控制信号有选择地存储与数据输入信号相关联的数据。 闩锁模块有选择地将至少一个电压供给信号从第一电平改变到第二电平，并且基于锁存控制信号输出根据第二电平的数据。

公开(公告)号：US07824981B2

公开(公告)日：2010-11-02

申请号：US11980154

申请日：2007-10-30

Applicant: Chih-Hsin Wang

Inventor： Chih-Hsin Wang

IPC: H01L21/336 ,  H01L21/331 ,  G11C16/04

CPC classification number: H01L27/115 ,  G11C16/0416 ,  H01L27/11521 ,  H01L27/11568 ,  H01L29/42324 ,  H01L29/42336 ,  H01L29/7881 ,  H01L29/7883 ,  H01L29/7885 ,  H01L29/792

Abstract: A method comprises providing a first conductive region, arranging a second conductive region adjacent to and insulated from the first conductive region by a dielectric region, arranging a third region adjacent to and insulated from the second conductive region, and adjusting mechanical stress to at least one of the first conductive region and the second conductive region.

Abstract translation: 一种方法包括提供第一导电区域，通过电介质区域布置邻近第一导电区域并与第一导电区域绝缘的第二导电区域，布置邻近第二导电区域并与第二导电区域绝缘的第三区域，以及将机械应力调整至至少一个 的第一导电区域和第二导电区域。

公开(公告)号：US07746704B1

公开(公告)日：2010-06-29

申请号：US12209794

申请日：2008-09-12

Applicant: Qiang Tang ,  Bo Wang ,  Chih-Hsin Wang

Inventor： Qiang Tang ,  Bo Wang ,  Chih-Hsin Wang

IPC: G11C16/04

CPC classification number: G11C11/5621 ,  G11C16/10

Abstract: A system includes an input that receives a control signal and a program module that initializes a nonvolatile multilevel memory cell based on the control signal. The program module initializes the nonvolatile multilevel memory cell by programming the nonvolatile multilevel memory cell to one of S states of the nonvolatile multilevel memory cell, where S is an integer greater than 1. The one of the S states is different than a lowest one of the S states.

Abstract translation: 系统包括接收控制信号的输入端和基于控制信号初始化非易失性多电平存储单元的程序模块。 程序模块通过将非易失性多级存储器单元编程为非易失性多级存储器单元的S状态之一来初始化非易失性多级存储器单元，其中S是大于1的整数.S状态中的一个不同于 S州。