公开(公告)号：US20110170163A1

公开(公告)日：2011-07-14

申请号：US12978126

申请日：2010-12-23

申请人： Yves Taillon ,  Mathieu Drolet ,  David Gay ,  Louis Desbiens ,  Brian W. Baird

发明人： Yves Taillon ,  Mathieu Drolet ,  David Gay ,  Louis Desbiens ,  Brian W. Baird

IPC分类号： G02F1/01

CPC分类号： B23K26/066

摘要： Laser systems and methods for providing an output light beam having a target spatial pattern are provided. A light generating module generates an input light beam, whose spectral profile is then tailored by imposing thereon a controllable phase modulation. The obtained spectrally tailored light beam is dispersed, using at least one spatially-dispersive element to provide an output light beam having a spatial profile which is a function of the spectral profile of the spectrally tailored light beam, The phase modulation is selected in view of the spectral profile of the input light beam and of the dispersion characteristics of the at least one spatially-dispersive element so that the spatial pattern of the output light beam matches the target spatial pattern therefor.

摘要翻译： 提供了用于提供具有目标空间图案的输出光束的激光系统和方法。 光产生模块产生输入光束，其光谱轮廓然后通过在其上施加可控相位调制而被调整。 使用至少一个空间色散元件将获得的光谱定制的光束分散，以提供具有作为光谱定制的光束的光谱分布的函数的空间分布的输出光束。相位调制是根据 输入光束的光谱分布和至少一个空间色散元件的色散特性，使得输出光束的空间图案与目标空间图案匹配。

公开(公告)号：US07935941B2

公开(公告)日：2011-05-03

申请号：US11051263

申请日：2005-02-04

申请人： Kelly J. Bruland ,  Brian W. Baird ,  Ho Wai Lo ,  Frank G. Evans

发明人： Kelly J. Bruland ,  Brian W. Baird ,  Ho Wai Lo ,  Frank G. Evans

IPC分类号： B23K26/08 ,  B23K26/38

CPC分类号： B23K26/067

摘要： Methods and systems selectively irradiate structures on or within a semiconductor substrate using a plurality of laser beams. The structures are arranged in a row extending in a generally lengthwise direction. The method generates a first laser beam that propagates along a first laser beam axis that intersects the semiconductor substrate and a second laser beam that propagates along a second laser beam axis that intersects the semiconductor substrate. The method directs the first and second laser beams onto non-adjacent first and second structures in the row. The method moves the first and second laser beam axes relative to the semiconductor substrate along the row substantially in unison in a direction substantially parallel to the lengthwise direction of the row.

摘要翻译： 方法和系统使用多个激光束选择性地照射半导体衬底上或内部的结构。 这些结构被布置成在大体上沿长度方向延伸的一排。 该方法产生沿着与半导体衬底相交的第一激光束轴传播的第一激光束和沿着与半导体衬底相交的第二激光束轴传播的第二激光束。 该方法将第一和第二激光束引导到行中不相邻的第一和第二结构。 该方法使第一激光束和第二激光束相对于半导体衬底在基本上平行于该行的长度方向的方向上大致一齐地沿着行移动。

公开(公告)号：US20070272555A1

公开(公告)日：2007-11-29

申请号：US11440711

申请日：2006-05-24

申请人： Brian W. Baird

发明人： Brian W. Baird

IPC分类号： C10G33/02

CPC分类号： H01L21/268 ,  B23K26/0624 ,  B23K26/083 ,  B23K26/0876 ,  B23K26/40 ,  B23K2103/172 ,  B23K2103/42 ,  B23K2103/50 ,  H01L21/31105 ,  H01L21/31127 ,  H01L21/481

摘要： Laser output including at least one laser pulse having a wavelength greater than 1.1 μm and shorter than 5 μm (preferably at about 1.1 μm) and having a pulsewidth shorter than 100 ps (preferably shorter than 10 ps) permits low-k dielectric material, such as SRO or SiCOH, to be removed without damaging the substrate. An oscillator module in cooperation with an amplification module are used to generate the laser output.

摘要翻译： 具有波长大于1.1μm且小于5μm（优选约1.1μm）并具有短于100ps（优选地小于10ps）的脉冲宽度的脉冲宽度的至少一个激光脉冲的激光输出允许低k电介质材料，例如 作为SRO或SiCOH被去除而不损坏基底。 与放大模块配合使用的振荡器模块用于产生激光输出。

公开(公告)号：US08526473B2

公开(公告)日：2013-09-03

申请号：US12060076

申请日：2008-03-31

申请人： Brian W. Baird ,  Clint R. Vandergiessen ,  Steve Swaringen ,  Robert Hainsey ,  Yunlong Sun ,  Kelly J. Bruland ,  Andrew Hooper

发明人： Brian W. Baird ,  Clint R. Vandergiessen ,  Steve Swaringen ,  Robert Hainsey ,  Yunlong Sun ,  Kelly J. Bruland ,  Andrew Hooper

IPC分类号： H01L21/302 ,  H01S3/10 ,  B23K26/38

CPC分类号： H01S3/1305 ,  B23K26/0622 ,  H01S3/0057 ,  H01S3/102

摘要： Processing workpieces such as semiconductor wafers or other materials with a laser includes selecting a target to process that corresponds to a target class associated with a predefined temporal pulse profile. The temporal pulse profile includes a first portion that defines a first time duration, and a second portion that defines a second time duration. A method includes generating a laser pulse based on laser system input parameters configured to shape the laser pulse according to the temporal pulse profile, detecting the generated laser pulse, comparing the generated laser pulse to the temporal pulse profile, and adjusting the laser system input parameters based on the comparison.

摘要翻译： 使用激光加工诸如半导体晶片或其他材料的工件包括选择对应于与预定义的时间脉冲轮廓相关联的目标类别的目标。 时间脉冲分布包括限定第一持续时间的第一部分和限定第二持续时间的第二部分。 一种方法包括：基于激光系统输入参数产生激光脉冲，所述激光系统输入参数被配置为根据时间脉冲分布来形成激光脉冲，检测所产生的激光脉冲，将所产生的激光脉冲与时间脉冲分布进行比较，以及调整激光系统输入参数 基于比较。

公开(公告)号：US08263903B2

公开(公告)日：2012-09-11

申请号：US12782458

申请日：2010-05-18

申请人： Pascal Deladurantaye ,  Louis Desbiens ,  Yves Taillon ,  Dany Lemieux ,  Brian W. Baird

发明人： Pascal Deladurantaye ,  Louis Desbiens ,  Yves Taillon ,  Dany Lemieux ,  Brian W. Baird

IPC分类号： B23K26/42 ,  B23K26/06 ,  B23K26/073

CPC分类号： H01S5/06835 ,  H01S3/06758 ,  H01S3/094003 ,  H01S5/0057 ,  H01S5/0428

摘要： A method for stabilizing an output of a pulsed laser system includes a directly modulated laser diode by mitigating the effect of switching transients on the temporal shape of the outputted pulses. The method includes controlling a pulse shaping signal to define, over time, processing and conditioning periods. During the processing periods, the pulse shaping signal has an amplitude profile tailored to produce the desired temporal shape of the output. Each conditioning period either immediately precedes or follows a processing period. During a given processing period, the amplitude profile of the pulse shaping signal is tailored so that the drive current of the laser diode is lower than its maximum value during the corresponding processing period, and is of the same order of magnitude as the laser threshold current of the laser diode. In this manner, the stability of the output during the corresponding processing period is improved.

摘要翻译： 用于稳定脉冲激光系统的输出的方法包括通过减轻对输出脉冲的时间形状的切换瞬变的影响的直接调制的激光二极管。 该方法包括控制脉冲整形信号以定义时间上的处理和调节周期。 在处理周期期间，脉冲整形信号具有调整的幅度分布，以产生输出的期望时间形状。 每个调理期间紧接在处理期之前或之后。 在给定的处理周期期间，调整脉冲整形信号的幅度分布，使得激光二极管的驱动电流在相应的处理周期内低于其最大值，并且与激光阈值电流具有相同的数量级 的激光二极管。 以这种方式，提高了在相应处理期间输出的稳定性。

公开(公告)号：USRE43487E1

公开(公告)日：2012-06-26

申请号：US12350767

申请日：2009-01-08

申请人： James N. O'Brien ,  Lian-Cheng Zou ,  Yunlong Sun ,  Kevin P. Fahey ,  Michael J. Wolfe ,  Brian W. Baird ,  Richard S. Harris

发明人： James N. O'Brien ,  Lian-Cheng Zou ,  Yunlong Sun ,  Kevin P. Fahey ,  Michael J. Wolfe ,  Brian W. Baird ,  Richard S. Harris

IPC分类号： B23K26/04 ,  C04B41/91

CPC分类号： B23K26/0622 ,  B23K26/032 ,  B23K26/066 ,  B23K26/073 ,  B23K26/083 ,  B23K26/0869 ,  B23K26/364 ,  B23K26/38 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/50

摘要： UV laser cutting throughput through silicon and like materials is improved by dividing a long cut path (112) into short segments (122), from about 10 μm to 1 mm. The laser output (32) is scanned within a first short segment (122) for a predetermined number of passes before being moved to and scanned within a second short segment (122) for a predetermined number of passes. The bite size, segment size (126), and segment overlap (136) can be manipulated to minimize the amount and type of trench backfill. Real-time monitoring is employed to reduce rescanning portions of the cut path 112 (112) where the cut is already completed. Polarization direction of the laser output (32) is also correlated with the cutting direction to further enhance throughput. This technique can be employed to cut a variety of materials with a variety of different lasers and wavelengths. A multi-step process can optimize the laser processes for each individual layer.

摘要翻译： 通过将长切割路径（112）分割成约10微米至1mm的短段（122）来提高通过硅等材料的UV激光切割吞吐量。 激光输出（32）在第一短段（122）内扫描预定数量的通过，然后移动到第二短段（122）内并在第二短段（122）内扫描预定次数的通过次数。 可以操纵咬合尺寸，段尺寸（126）和段重叠（136）以最小化沟槽回填的数量和类型。 采用实时监测来减少已经完成切割的切割路径112（112）的重新扫描部分。 激光输出（32）的极化方向也与切割方向相关，以进一步提高吞吐量。 该技术可用于切割具有各种不同激光和波长的各种材料。 多步骤过程可以优化每个单独层的激光工艺。

公开(公告)号：US20100089881A1

公开(公告)日：2010-04-15

申请号：US12638685

申请日：2009-12-15

申请人： Kelly J. Bruland ,  Brian W. Baird ,  Ho Wai Lo

发明人： Kelly J. Bruland ,  Brian W. Baird ,  Ho Wai Lo

IPC分类号： B23K26/06 ,  B23K26/08 ,  B23K26/36

CPC分类号： B23K26/067 ,  B23K26/0613 ,  H01L21/76894

摘要： Methods and systems process a semiconductor substrate having a plurality of structures to be selectively irradiated with multiple laser beams. The structures are arranged in a plurality of substantially parallel rows extending in a generally lengthwise direction. The method generates a first laser beam that propagates along a first laser beam axis that intersects a first target location on or within the semiconductor substrate. The method also generates a second laser beam that propagates along a second laser beam axis that intersects a second target location on or within the semiconductor substrate. The second target location is offset from the first target location in a direction perpendicular to the lengthwise direction of the rows by some amount such that, when the first target location is a structure on a first row of structures, the second target location is a structure or between two adjacent structures on a second row distinct from the first row. The method moves the semiconductor substrate relative to the first and second laser axes in a direction approximately parallel to the rows of structures, so as to pass the first target location along the first row to irradiate for a first time selected structures in the first row, and so as to simultaneously pass the second target location along the second row to irradiate for a second time structures previously irradiated by the first laser beam during a previous pass of the first target location along the second row.

摘要翻译： 方法和系统处理具有多个结构的半导体衬底以选择性地照射多个激光束。 这些结构被布置成沿大致长度方向延伸的多个基本上平行的行。 该方法产生沿着与半导体衬底上或半导体衬底内的第一目标位置相交的第一激光束轴传播的第一激光束。 该方法还产生沿着与半导体衬底上或第二靶标位置相交的第二激光束轴传播的第二激光束。 第二目标位置在垂直于行长度方向的方向上偏离第一目标位置一定量，使得当第一目标位置是第一行结构上的结构时，第二目标位置是结构 或在与第一行不同的第二行上的两个相邻结构之间。 所述方法使所述半导体衬底相对于所述第一和第二激光轴在大致平行于所述结构行的方向上移动，以使所述第一目标位置沿着所述第一行通过，以在所述第一行中首次照射所选择的结构， 并且沿着第二行同时通过第二目标位置以照射先前在第一目标位置沿着第二行的先前通过期间由第一激光束照射的第二时间结构。

公开(公告)号：US20090242522A1

公开(公告)日：2009-10-01

申请号：US12235294

申请日：2008-09-22

申请人： Brian W. Baird ,  Kelly J. Bruland ,  Robert Hainsey

发明人： Brian W. Baird ,  Kelly J. Bruland ,  Robert Hainsey

IPC分类号： B23K26/00

CPC分类号： B23K26/03

摘要： A laser processing system includes a beam positioning system to align beam delivery coordinates relative to a workpiece. The beam positioning system generates position data corresponding to the alignment. The system also includes a pulsed laser source and a beamlet generation module to receive a laser pulse from the pulsed laser source. The beamlet generation module generates a beamlet array from the laser pulse. The beamlet array includes a plurality of beamlet pulses. The system further includes a beamlet modulator to selectively modulate the amplitude of each beamlet pulse in the beamlet array, and beamlet delivery optics to focus the modulated beamlet array onto one or more targets at locations on the workpiece corresponding to the position data.

摘要翻译： 激光处理系统包括用于使输送坐标相对于工件对准的光束定位系统。 光束定位系统产生对准的位置数据。 该系统还包括脉冲激光源和子束产生模块，以从脉冲激光源接收激光脉冲。 子波束生成模块从激光脉冲生成小波阵列。 子束阵列包括多个子束脉冲。 该系统还包括一个子束调制器，用于选择性地调制子束阵列中的每个子束脉冲的振幅，以及子束传递光学器件，用于将调制的子束阵列聚焦到与位置数据对应的工件上的位置上的一个或多个目标上。

公开(公告)号：US20090011614A1

公开(公告)日：2009-01-08

申请号：US12210955

申请日：2008-09-15

申请人： Kelly J. Bruland ,  Brian W. Baird ,  Ho Wai Lo ,  Stephen N. Swaringen ,  Frank G. Evans

发明人： Kelly J. Bruland ,  Brian W. Baird ,  Ho Wai Lo ,  Stephen N. Swaringen ,  Frank G. Evans

IPC分类号： H01L21/268 ,  B23K26/08

CPC分类号： B23K26/067 ,  B23K26/0624 ,  B23K26/066 ,  B23K26/0676 ,  B23K26/0853 ,  B23K2101/40 ,  B23K2103/10 ,  B23K2103/12 ,  B23K2103/14 ,  H01L21/76894 ,  H01L23/5258 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods and systems selectively irradiate structures on or within a semiconductor wafer using multiple laser beams. The structures may be laser-severable conductive links, and the purpose of the irradiation may be to sever selected links. The structures are arranged in rows and may be processed in either an on-axis mode or a cross-axis mode. In the on-axis mode, the beam spots fall on structures in the same row as they move along the row. In the cross-axis mode, the beam spots fall on structures in different rows as they move along the rows.

摘要翻译： 方法和系统使用多个激光束选择性地照射半导体晶片上或其中的结构。 结构可以是激光可分割的导电连接，并且照射的目的可以是切断所选择的连接。 这些结构被排列成行，并且可以以轴上模式或横轴模式进行处理。 在轴上模式下，光束点落在同一行的结构上，因为它们沿着行移动。 在横轴模式下，当束沿着行移动时，束斑落在不同行中的结构上。

公开(公告)号：US07435927B2

公开(公告)日：2008-10-14

申请号：US11051265

申请日：2005-02-04

申请人： Kelly J. Bruland ,  Brian W. Baird ,  Ho Wai Lo ,  Stephen N. Swaringen

发明人： Kelly J. Bruland ,  Brian W. Baird ,  Ho Wai Lo ,  Stephen N. Swaringen

IPC分类号： B23K26/38 ,  B23K26/067

CPC分类号： H01L23/5258 ,  B23K26/0613 ,  B23K26/0622 ,  B23K26/0624 ,  B23K26/082 ,  G11C17/14 ,  G11C17/143 ,  H01L2924/0002 ,  H01L2924/00

摘要： Multiple laser beams selectively irradiate electrically conductive structures on or within a semiconductor substrate. The structures are arranged in a plurality of substantially parallel rows extending in a generally lengthwise direction. One method propagates first and second laser beams along respective first and second propagation paths having respective first and second axes incident at respective first and second locations on or within the semiconductor substrate at a given time. The first and second locations are either on a structure in their respective rows or between two adjacent structures in their respective rows, which are distinct. The second location is offset from the first location by some amount in the lengthwise direction of the rows. The method moves the laser beam axes substantially in unison in the lengthwise direction of the rows relative to the semiconductor substrate, so as to selectively irradiate structures in the rows with the laser beams.

摘要翻译： 多个激光束选择性地照射半导体衬底上或内部的导电结构。 这些结构被布置成沿大致长度方向延伸的多个基本上平行的行。 一种方法沿着相应的第一和第二传播路径传播第一和第二传播路径，其中在相应的给定时间，半导体衬底上或第二位置处的相应的第一和第二轴入射到相应的第一和第二位置处。 第一和第二位置在它们各自的行中的结构上或它们各自的行中的两个相邻结构之间，这是不同的。 第二位置在行的长度方向上偏离第一位置一定量。 该方法使激光束轴相对于半导体衬底在行的长度方向上基本一致地移动，以便用激光束选择性地照射行中的结构。