利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

26 条记录 (耗时 0.022 秒)

    Method of forming a silicon layer and method of manufacturing a display substrate by using the same
    12.
    发明授权
    Method of forming a silicon layer and method of manufacturing a display substrate by using the same 有权
    硅层的形成方法及其制造方法

    公开(公告)号：US07696091B2

    公开(公告)日：2010-04-13

    申请号：US11675935

    申请日：2007-02-16

    申请人： Kunal Girotra ,  Byoung-June Kim ,  Sung-Hoon Yang

    发明人： Kunal Girotra ,  Byoung-June Kim ,  Sung-Hoon Yang

    IPC分类号： H01L21/44

    CPC分类号： H01L29/04 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/0262 ,  H01L27/1296

    摘要： A method of manufacturing a silicon layer includes pretreating a surface of a silicon nitride layer formed on a substrate through a plasma enhanced chemical vapor deposition method using a first reaction gas including at least one of silicone tetrafluoride (SiF4) gas, a nitrogen trifluoride (NF3) gas, SiF4—H2 gas and a mixture thereof. Then, a silicon layer is formed on the pretreated silicon nitride layer through the plasma enhanced chemical vapor deposition method using a second reaction gas including a mixture of gas including silicon tetrafluoride (SiF4), hydrogen (H2) and argon (Ar).

    摘要翻译： 一种制造硅层的方法包括：使用包括四氟化硅（SiF 4）气体，三氟化氮（NF 3），氟化三氟化硼中的至少一种的第一反应气体，通过等离子体增强化学气相沉积法，对形成在基板上的氮化硅层的表面进行预处理 ）气体，SiF 4 -H 2气体及其混合物。 然后，使用包括四氟化硅（SiF 4），氢（H 2）和氩（Ar）的气体混合物的第二反应气体，通过等离子体增强化学气相沉积法在预处理的氮化硅层上形成硅层。

    Thin film transistor array panel and method for manufacturing the same
    13.
    发明申请
    Thin film transistor array panel and method for manufacturing the same 审中-公开
    薄膜晶体管阵列面板及其制造方法

    公开(公告)号：US20060118793A1

    公开(公告)日：2006-06-08

    申请号：US11262163

    申请日：2005-10-27

    申请人： Sung-Hoon Yang ,  Kunal Girotra ,  Byoung-June Kim

    发明人： Sung-Hoon Yang ,  Kunal Girotra ,  Byoung-June Kim

    IPC分类号： H01L33/00 ,  H01L31/113

    CPC分类号： H01L29/458 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/4908

    摘要： A TFT array panel including a substrate, a gate line having a gate electrode, a gate insulating layer formed on the gate line, a data line having a source electrode and a drain electrode spaced apart from the source electrode, a passivation layer formed on the data line and the drain electrode, and a pixel electrode connected to the drain electrode is provided. The TFT array panel further includes a protection layer including Si under at least one of the gate insulating layer and the passivation layer to enhance reliability.

    摘要翻译： 一种TFT阵列面板，包括基板，具有栅极电极的栅极线，栅极线上形成的栅极绝缘层，具有与源极间隔开的源极和漏电极的数据线，形成在栅电极上的钝化层 数据线和漏电极，以及连接到漏电极的像素电极。 TFT阵列板还包括在栅极绝缘层和钝化层中的至少一个之下包括Si的保护层，以增强可靠性。

    Method of Forming a Silicon Layer and Method of Manufacturing a Display Substrate by Using the Same
    14.
    发明申请
    Method of Forming a Silicon Layer and Method of Manufacturing a Display Substrate by Using the Same 有权
    形成硅层的方法和使用其形成显示器基板的方法

    公开(公告)号：US20070212827A1

    公开(公告)日：2007-09-13

    申请号：US11675935

    申请日：2007-02-16

    申请人： Kunal Girotra ,  Byoung-June Kim ,  Sung-Hoon Yang

    发明人： Kunal Girotra ,  Byoung-June Kim ,  Sung-Hoon Yang

    IPC分类号： H01L21/84

    CPC分类号： H01L29/04 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/0262 ,  H01L27/1296

    摘要： A method of manufacturing a silicon layer includes pretreating a surface of a silicon nitride layer formed on a substrate through a plasma enhanced chemical vapor deposition method using a first reaction gas including at least one of silicone tetrafluoride (SiF4) gas, a nitrogen trifluoride (NF3) gas, SiF4—H2 gas and a mixture thereof Then, a silicon layer is formed on the pretreated silicon nitride layer through the plasma enhanced chemical vapor deposition method using a second reaction gas including a mixture of gas including silicon tetrfluoride (SiF4), hydrogen (H2) and argon (Ar),

    摘要翻译： 一种制造硅层的方法包括：使用第一反应气体，通过等离子体增强化学气相沉积方法来预处理在衬底上形成的氮化硅层的表面，所述第一反应气体包括四氟化硅（SiF 4 N 4 O 4） ）气体，三氟化氮（NF 3 3）气体，SiF 4 H 2 H 2气体及其混合物然后，形成硅层 通过等离子体增强化学气相沉积方法在预处理的氮化硅层上，使用包括包括四氟化硅（SiF 4 N 4），氢（H 2 O 3）的气体混合物的第二反应气体， ）和氩（Ar），

    Thin film transistor array panel and method for manufacturing the same
    15.
    发明申请
    Thin film transistor array panel and method for manufacturing the same 审中-公开
    薄膜晶体管阵列面板及其制造方法

    公开(公告)号：US20070002198A1

    公开(公告)日：2007-01-04

    申请号：US11444954

    申请日：2006-05-31

    申请人： Sung-Hoon Yang ,  Won-Suk Shin ,  Byoung-June Kim

    发明人： Sung-Hoon Yang ,  Won-Suk Shin ,  Byoung-June Kim

    IPC分类号： G02F1/136

    CPC分类号： G02F1/136286 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2001/136295 ,  H01L27/124 ,  H01L29/4908

    摘要： The present invention provides a thin film transistor array panel comprising a substrate; a gate line containing Ag formed on the substrate at a low temperature to prevent agglomeration, a first gate insulating layer formed on the gate line, a second gate insulating layer formed on the first gate insulating layer, a data line perpendicularly intersecting the gate line, and a thin film transistor connected to the gate line and the data line, and a manufacturing method thereof.

    摘要翻译： 本发明提供一种薄膜晶体管阵列板，其包括基板; 在低温下形成在基板上的Ag以防止凝聚的栅极线，形成在栅极线上的第一栅极绝缘层，形成在第一栅极绝缘层上的第二栅极绝缘层，与栅极线垂直相交的数据线， 以及连接到栅极线和数据线的薄膜晶体管及其制造方法。

    METHOD OF TRIMMING A SOLAR ENERGY ASSEMBLY
    16.
    发明申请
    METHOD OF TRIMMING A SOLAR ENERGY ASSEMBLY 审中-公开
    调整太阳能组件的方法

    公开(公告)号：US20120112542A1

    公开(公告)日：2012-05-10

    申请号：US13354671

    申请日：2012-01-20

    申请人： Myung-Hun SHIN ,  Dong-Uk Choi ,  Byoung-June Kim ,  Jin-Seock Kim ,  Czang-Ho Lee ,  Seung-Jae Jung ,  Joon-Young Seo

    发明人： Myung-Hun SHIN ,  Dong-Uk Choi ,  Byoung-June Kim ,  Jin-Seock Kim ,  Czang-Ho Lee ,  Seung-Jae Jung ,  Joon-Young Seo

    IPC分类号： H02J1/00

    CPC分类号： H01L31/042 ,  H01L31/0201 ,  H01L31/046 ,  H01L31/05 ,  H02S40/36 ,  H02S50/10 ,  Y02E10/50 ,  Y10T307/50

    摘要： A method of electrically eliminating defective solar cell units that are disposed within an integrated solar cells module and a method of trimming an output voltage of the integrated solar cells module are provided, where the solar cells module has a large number (e.g., 50 or more) of solar cell units integrally disposed therein and initially connected in series one to the next. The method includes providing a corresponding plurality of repair pads, each integrally extending from a respective electrode layer of the solar cell units, and providing a bypass conductor integrated within the module and extending adjacent to the repair pads. Pad-to-pad spacings and pad-to-bypass spacings are such that pad-to-pad connecting bridges may be selectively created between adjacent ones of the repair pads and such that pad-to-bypass connecting bridges may be selectively created between the repair pads and the adjacently extending bypass conductor.

    摘要翻译： 提供了一种电除去集成太阳能电池模块内的有缺陷的太阳能电池单元的方法和一种微调集成太阳能电池组件的输出电压的方法，其中太阳能电池模块具有大量（例如，50个或更多个） ）的太阳能电池单元整体地设置在其中并且最初串联连接到下一个。 该方法包括提供相应的多个修复焊盘，每个修补焊盘从太阳能电池单元的相应电极层整体延伸，并且提供集成在模块内并在修补焊盘附近延伸的旁路导体。 垫到衬垫间距和衬垫到旁路间隔使得可以在相邻的修补焊盘之间选择性地创建焊盘到焊盘的连接桥，并且可以在焊盘到旁路的连接桥之间选择性地创建焊盘到旁路的连接桥 修补垫和相邻延伸的旁路导体。

    Thin film transistor, organic light emitting device including thin film transistor, and manufacturing method thereof
    17.
    发明授权
    Thin film transistor, organic light emitting device including thin film transistor, and manufacturing method thereof 有权
    薄膜晶体管，包括薄膜晶体管的有机发光器件及其制造方法

    公开(公告)号：US08013325B2

    公开(公告)日：2011-09-06

    申请号：US11770171

    申请日：2007-06-28

    申请人： Jong-Moo Huh ,  Kyu-Sik Cho ,  Kunal Girotra ,  Joo-Hoo Choi ,  Byoung-June Kim

    发明人： Jong-Moo Huh ,  Kyu-Sik Cho ,  Kunal Girotra ,  Joo-Hoo Choi ,  Byoung-June Kim

    IPC分类号： H01L35/24 ,  H01L51/00

    CPC分类号： H01L27/1277 ,  H01L27/1214 ,  H01L27/3262

    摘要： The present invention relates to a thin film transistor, a method thereof and an organic light emitting device including the thin film transistor. According to an embodiment of the present invention, the thin film transistor includes a substrate, a control electrode, an insulating layer, a first electrode and a second electrode, a first ohmic contact layer and a second ohmic contact layer, and a semiconductor layer. The control electrode is formed on the substrate, and the insulating layer is formed on the control electrode. The first and the second electrodes are formed on the insulating layer. The first ohmic contact layer and the second ohmic contact layer are formed on the first electrode and the second electrode. The semiconductor layer is formed on the first ohmic contact layer and the second ohmic contact layer to fill between the first and the second electrodes.

    摘要翻译： 薄膜晶体管及其制造方法技术领域本发明涉及薄膜晶体管及其制造方法以及包含该薄膜晶体管的有机发光元件。 根据本发明的实施例，薄膜晶体管包括基板，控制电极，绝缘层，第一电极和第二电极，第一欧姆接触层和第二欧姆接触层以及半导体层。 控制电极形成在基板上，绝缘层形成在控制电极上。 第一和第二电极形成在绝缘层上。 第一欧姆接触层和第二欧姆接触层形成在第一电极和第二电极上。 半导体层形成在第一欧姆接触层和第二欧姆接触层上以填充第一和第二电极之间。

    METHOD OF MANUFACTURING PHOTOELECTRIC DEVICE
    19.
    发明申请
    METHOD OF MANUFACTURING PHOTOELECTRIC DEVICE 失效
    制造光电器件的方法

    公开(公告)号：US20090233399A1

    公开(公告)日：2009-09-17

    申请号：US12400674

    申请日：2009-03-09

    申请人： Seung-Jae Jung ,  Byoung-June Kim ,  Jin-Seock Kim ,  Czang-Ho Lee ,  Myung-Hun Shin ,  Joon-Young Seo ,  Dong-Uk Choi ,  Byoung-Kyu Lee

    发明人： Seung-Jae Jung ,  Byoung-June Kim ,  Jin-Seock Kim ,  Czang-Ho Lee ,  Myung-Hun Shin ,  Joon-Young Seo ,  Dong-Uk Choi ,  Byoung-Kyu Lee

    IPC分类号： H01L31/18

    CPC分类号： H01L31/02366 ,  H01L31/022483 ,  H01L31/046 ,  H01L31/1888 ,  Y02E10/50 ,  Y10S438/964

    摘要： In a method of manufacturing a photoelectric device, a transparent conductive layer is formed on a substrate, and the transparent conductive layer is partially etched using an etching solution including hydrofluoric acid. Thus, a transparent electrode having a concavo-convex pattern on its surface is formed. When the transparent conductive layer is partially etched, a haze of the transparent electrode may be controlled by adjusting an etching time of the transparent conductive layer. Also, since the etching solution is sprayed to the transparent conductive layer to etch the transparent conductive layer, the concavo-convex pattern on the surface of the transparent electrode may be easily formed even though the size of the substrate increases.

    摘要翻译： 在制造光电器件的方法中，在衬底上形成透明导电层，并且使用包括氢氟酸的蚀刻溶液部分蚀刻透明导电层。 因此，形成在其表面具有凹凸图案的透明电极。 当透明导电层被部分蚀刻时，可以通过调节透明导电层的蚀刻时间来控制透明电极的雾度。 此外，由于将蚀刻溶液喷射到透明导电层以蚀刻透明导电层，所以即使基板的尺寸增加，也可以容易地形成透明电极表面上的凹凸图案。