-
公开(公告)号：US11688811B2
公开(公告)日：2023-06-27
申请号：US17123231
申请日：2020-12-16
IPC分类号： H01L29/786 , H01L29/78 , H01L29/10 , H01L29/423 , H01L29/49 , H01L29/66 , H01L27/12
CPC分类号： H01L29/78696 , H01L27/127 , H01L27/1222 , H01L29/1033 , H01L29/1037 , H01L29/42384 , H01L29/4908 , H01L29/66545 , H01L29/66742 , H01L29/66772 , H01L29/78 , H01L29/7842 , H01L29/78654
摘要： A field-effect transistor including an active zone comprises a source, a channel, a drain and a control gate, which is positioned level with the channel, allowing a current to flow through the channel between the source and drain along an x-axis, the channel comprising: a first edge of separation with the source; and a second edge of separation with the drain; the channel being compressively or tensilely strained, wherein the channel includes a localized perforation or a set of localized perforations along at least the first and/or second edge of the channel so as to also create at least one shear strain in the channel. A process for fabricating the transistor is provided.
-
公开(公告)号：US11415881B2
公开(公告)日：2022-08-16
申请号：US16469897
申请日：2017-12-07
发明人： Stefan Landis , Raluca Tiron
IPC分类号： G03F7/00
摘要： A method for functionalising a substrate intended for the self-assembly of a block copolymer, includes depositing on the surface of a substrate a layer of a first polymer material, the first polymer having a first chemical affinity with respect to the block copolymer; grafting one part only of the first polymer material layer onto the surface of the substrate; printing, using a mould, patterns in a sacrificial layer arranged above the grafted part of the first polymer material layer; transferring the patterns of the sacrificial layer into the grafted part of the first polymer material layer, until the substrate is reached; and removing at least one part of the sacrificial layer by wet etching, so as to uncover the grafted part of the first polymer material layer.
-
13.发明授权公开(公告)号：US10347721B2
公开(公告)日：2019-07-09
申请号：US15711549
申请日：2017-09-21
发明人： Shay Reboh , Laurent Grenouillet , Raluca Tiron
IPC分类号： H01L29/10 , H01L21/02 , H01L29/66 , H01L29/78 , H01L29/786
摘要： There is provided a method for making a device including at least a strained semiconductor structure configured to form at least a transistor channel, including: forming, on a semiconductor layer, a sacrificial gate block and source and drain blocks on either side of the block, the semiconductor layer being a strained surface semiconductor layer disposed on an underlying insulating layer, with the underlying layer being disposed on an etch-stop layer; removing the block to form a cavity revealing a region of the strained surface layer configured to form the transistor channel; and etching, in the cavity, one or more portions of the region to define one or more semiconductor blocks and holes on either side, respectively, of the one or more blocks, the etching of holes extending into the underlying layer to form one or more galleries therein, etching of the galleries being stopped by the etch-stop layer.
-
公开(公告)号：US09599890B2
公开(公告)日：2017-03-21
申请号：US14654277
申请日：2013-12-16
CPC分类号： G03F1/76 , B82Y30/00 , C08L53/00 , G03F1/00 , G03F7/0002 , G03F7/325 , H01L21/0274
摘要： The invention concerns a manufacturing method for nanolithography masks from a PS-b-PMMA block copolymer film deposited on a surface to be etched, said copolymer film comprising PMMA nanodomains orientated perpendicularly to the surface to be etched, said method being characterized in that it comprises the following steps: partially irradiating said copolymer film to form a first irradiated area and a second non-irradiated area in said copolymer film, then treating said copolymer film in a developer solvent to selectively remove at least said PMMA nanodomains of said first irradiated area of said copolymer film.
-
公开(公告)号：US10928725B2
公开(公告)日：2021-02-23
申请号：US16304897
申请日：2017-05-23
IPC分类号： H01L21/3213 , H01L21/311 , H01L21/033 , H01L21/027 , G03F7/00 , B81C1/00
摘要： A method for the directed self-assembly of a block copolymer by graphoepitaxy, includes forming a guide pattern, the guide pattern having a cavity with a bottom and side walls; forming a functionalisation layer on the guide pattern that has a first portion and a second portion disposed, respectively, on the bottom and side walls of the cavity; forming a protective layer on the first and second portions of the functionalisation layer; etching the protective layer and the second portion of the functionalisation layer such that a portion of the protective layer is retained and the side walls of the cavity are exposed, the retained portion of the protective layer having a thickness of less than 15 nm; selectively etching the portion of the protective layer relative to the first portion of the functionalisation layer and to the guide pattern; and depositing a block copolymer in the cavity.
-
公开(公告)号：US10795257B2
公开(公告)日：2020-10-06
申请号：US16304933
申请日：2017-05-23
发明人： Raluca Tiron , Nicolas Posseme , Xavier Chevalier
IPC分类号： G03F7/00 , G03F7/004 , G03F7/075 , G03F7/11 , H01L21/311 , H01L21/033 , B81C1/00 , H01L21/3115
摘要： A method for forming a functionalised guide pattern for the self-assembly of a block copolymer by graphoepitaxy, includes forming a guide pattern made of a first material having a first chemical affinity for the block copolymer, the guide pattern having a cavity with a bottom and side walls; grafting a functionalisation layer made of a second polymeric material having a second chemical affinity for the block copolymer, the functionalisation layer having a first portion grafted onto the bottom of the cavity and a second portion grafted onto the side walls of the cavity; selectively etching the second portion of the functionalisation layer relative to the first portion of the functionalisation layer, the etching including a step of exposure to an ion beam following a direction that intersects the second portion of the functionalisation layer, such that the ion beam does not reach the first portion of the functionalisation layer.
-
-
-
-
-
搜索结果
16 条记录 (耗时 0.018 秒)
