公开(公告)号：US06815681B2

公开(公告)日：2004-11-09

申请号：US10465600

申请日：2003-06-20

Applicant: Dong-wook Kim ,  In-kyeong Yoo ,  Chang-wook Moon ,  In-sook Kim

Inventor： Dong-wook Kim ,  In-kyeong Yoo ,  Chang-wook Moon ,  In-sook Kim

IPC: H01J3700

CPC classification number: H01J37/3175 ,  H01J2237/31781

Abstract: An electron beam lithography apparatus, which uses a patterned emitter, includes a pyroelectric plate emitter that emits electrons using a patterned metal thin layer formed on the pyroelectric plate as a mask. When the emitter is heated, electrons are emitted from portions of the emitter covered with a patterned dielectric layer, and not from portions of the emitter covered with a patterned metal thin layer, and a pattern of the emitter is thereby projected onto a substrate. To prevent dispersion of emitted electron beams, the electron beams may be controlled by a permanent magnet, an electro-magnet, or a deflector unit. A one-to-one or x-to-one projection of a desired pattern on the substrate is thereby obtained.

Abstract translation: 使用图案化发射器的电子束光刻设备包括使用形成在热电板上的图案化金属薄层作为掩模发射电子的热电板发射器。 当发射极被加热时，电子从被图案化电介质层覆盖的发射体的部分发射，而不是由图案化的金属薄层覆盖的发射体的部分发射，并且因此将发射极的图案投影到衬底上。 为了防止发射的电子束的分散，电子束可以由永磁体，电磁体或偏转器单元来控制。 从而获得在衬底上所需图案的一对一或一对一投影。

公开(公告)号：US06784438B2

公开(公告)日：2004-08-31

申请号：US10688953

申请日：2003-10-21

Applicant: In-kyeong Yoo ,  Chang-wook Moon ,  Dong-wook Kim

Inventor： In-kyeong Yoo ,  Chang-wook Moon ,  Dong-wook Kim

IPC: H01J37073

CPC classification number: B82Y30/00 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3175 ,  H01J2237/06358 ,  H01J2237/31781

Abstract: An electron projection lithography apparatus using secondary electrons includes a secondary electron emitter which is spaced apart from a substrate holder by a first predetermined interval and has a patterned mask formed on a surface thereof to face the substrate holder, a primary electron emitter which is spaced apart by a second predetermined interval from the secondary electron emitter in a direction opposite to the substrate holder and emits primary electrons to the secondary electron emitter, a second power supply which applies a second predetermined voltage between the substrate holder and the secondary electron emitter, a first power supply which applies a first predetermined voltage between the secondary electron emitter and the primary electron emitter, and a magnetic field generator which controls a path of secondary electrons emitted from the secondary electron emitter.

公开(公告)号：US20070200158A1

公开(公告)日：2007-08-30

申请号：US11655193

申请日：2007-01-19

Applicant: Stefanovich Genrikh ,  Choong-rae Cho ,  In-kyeong Yoo ,  Eun-hong Lee ,  Sung-Il Cho ,  Chang-wook Moon

Inventor： Stefanovich Genrikh ,  Choong-rae Cho ,  In-kyeong Yoo ,  Eun-hong Lee ,  Sung-Il Cho ,  Chang-wook Moon

IPC: H01L29/94

CPC classification number: H01L27/115 ,  G11C2213/56 ,  H01L27/2436 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/146

Abstract: An electrode structure having at least two oxide layers that more reliably switch and operate without the use of additional devices and a non-volatile memory device having the same are provided. The electrode structure may include a lower electrode, a first oxide layer formed on the lower electrode, a second oxide layer formed on the first oxide layer and an upper electrode formed on the second oxide layer wherein at least one of the first and second oxide layers may be formed of a resistance-varying material. The first oxide layer may be formed of an oxide having a variable oxidation state.

Abstract translation: 提供具有至少两个氧化物层的电极结构，其更可靠地在不使用附加装置的情况下切换和操作，以及具有该氧化物层的非易失性存储装置。 电极结构可以包括下电极，形成在下电极上的第一氧化物层，形成在第一氧化物层上的第二氧化物层和形成在第二氧化物层上的上电极，其中第一氧化物层和第二氧化物层中的至少一个 可以由电阻变化材料形成。 第一氧化物层可以由具有可变氧化态的氧化物形成。

公开(公告)号：US20070126043A1

公开(公告)日：2007-06-07

申请号：US11606889

申请日：2006-12-01

Applicant: Chang-wook Moon ,  Sang-mock Lee ,  In-kyeong Yoo ,  Seung-woon Lee ,  El Bourim ,  Eun-hong Lee ,  Choong-rae Cho

Inventor： Chang-wook Moon ,  Sang-mock Lee ,  In-kyeong Yoo ,  Seung-woon Lee ,  El Bourim ,  Eun-hong Lee ,  Choong-rae Cho

IPC: H01L29/94

CPC classification number: H01L27/115 ,  B82Y10/00 ,  G11C13/0007 ,  G11C2213/15 ,  G11C2213/32 ,  G11C2213/34 ,  G11C2213/35 ,  G11C2213/79 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/146

Abstract: A storage node having a metal-insulator-metal structure, a non-volatile memory device including a storage node having a metal-insulator-metal (MIM) structure and a method of operating the same are provided. The memory device may include a switching element and a storage node connected to the switching element. The storage node may include a first metal layer, a first insulating layer and a second metal layer, sequentially stacked, and a nano-structure layer. The storage node may further include a second insulating layer and a third metal layer. The nano-structure layer, which is used as a carbon nano-structure layer, may include at least one fullerene layer.

Abstract translation: 提供一种具有金属 - 绝缘体 - 金属结构的存储节点，包括具有金属 - 绝缘体 - 金属（MIM）结构的存储节点的非易失性存储器件及其操作方法。 存储器件可以包括连接到开关元件的开关元件和存储节点。 存储节点可以包括依次层叠的第一金属层，第一绝缘层和第二金属层，以及纳米结构层。 存储节点还可以包括第二绝缘层和第三金属层。 用作碳纳米结构层的纳米结构层可以包括至少一个富勒烯层。

公开(公告)号：US07091054B2

公开(公告)日：2006-08-15

申请号：US11057469

申请日：2005-02-15

Applicant: In-kyeong Yoo ,  Chang-wook Moon ,  Soo-hwan Jeong ,  Dong-wook Kim

Inventor： In-kyeong Yoo ,  Chang-wook Moon ,  Soo-hwan Jeong ,  Dong-wook Kim

IPC: H01L21/00

CPC classification number: B82Y10/00 ,  H01J1/312 ,  H01J9/022 ,  H01J9/027 ,  H01J2237/31774 ,  H01J2237/31783

Abstract: An emitter for an electron-beam projection lithography (EPL) system and a manufacturing method therefor are provided. The electron-beam emitter includes a substrate, an insulating layer overlying the substrate, and a gate electrode including a base layer formed on top of the insulating layer to a uniform thickness and an electron-beam blocking layer formed on the base layer in a predetermined pattern. The manufacturing method includes steps of: preparing a substrate; forming an insulating layer on the substrate; forming a base layer of a gate electrode by depositing a conductive metal on the insulating layer to a predetermined thickness; forming an electron-beam blocking layer of the gate electrode by depositing a metal capable of anodizing on the base layer to a predetermined thickness; and patterning the electron-beam blocking layer in a predetermined pattern by anodizing. The emitter provides a uniform electric field within the insulating layer and simplify the manufacturing method therefor.

Abstract translation: 提供了一种用于电子束投影光刻（EPL）系统的发射器及其制造方法。 电子束发射器包括衬底，覆盖衬底的绝缘层，以及包括形成在绝缘层顶部上的基底层至均匀厚度的栅极电极和以预定的方式形成在基底层上的电子束阻挡层 模式。 该制造方法包括以下步骤：制备衬底; 在所述基板上形成绝缘层; 通过在所述绝缘层上沉积导电金属至预定厚度来形成栅电极的基层; 通过在基底层上沉积能够阳极氧化的金属至预定的厚度来形成栅电极的电子束阻挡层; 并通过阳极氧化将预定图案中的电子束阻挡层图案化。 发射极在绝缘层内提供均匀的电场，并简化其制造方法。

公开(公告)号：US08164130B2

公开(公告)日：2012-04-24

申请号：US10852287

申请日：2004-05-25

Applicant: Sun-ae Seo ,  In-kyeong Yoo ,  Myoung-jae Lee ,  Wan-jun Park

Inventor： Sun-ae Seo ,  In-kyeong Yoo ,  Myoung-jae Lee ,  Wan-jun Park

IPC: G11C11/34

CPC classification number: G11C13/0007 ,  G11C2213/32 ,  G11C2213/79 ,  H01L27/2409 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146

Abstract: A nonvolatile memory device including one transistor and one resistant material and a method of manufacturing the nonvolatile memory device are provided. The nonvolatile memory device includes a substrate, a transistor formed on the substrate, and a data storage unit connected to a drain of the transistor. The data storage unit includes a data storage material layer having different resistance characteristics in different voltage ranges.

公开(公告)号：US08043926B2

公开(公告)日：2011-10-25

申请号：US12926042

申请日：2010-10-22

Applicant: Sung-Il Cho ,  Choong-rae Cho ,  Eun-hong Lee ,  In-kyeong Yoo

Inventor： Sung-Il Cho ,  Choong-rae Cho ,  Eun-hong Lee ,  In-kyeong Yoo

IPC: H01L21/02

CPC classification number: H01L27/115 ,  G11C13/0007 ,  G11C2213/32 ,  G11C2213/51 ,  H01L27/112 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146

Abstract: A nonvolatile memory device includes at least one switching device and at least one storage node electrically connected to the at least one switching device. The at least one storage node includes a lower electrode, one or more oxygen-deficient metal oxide layers, one or more data storage layers, and an upper electrode. At least one of the one or more metal oxide layers is electrically connected to the lower electrode. At least one of the one or more data storage layers is electrically connected to at least one of the one or more metal oxide layers. The upper electrode is electrically connected to at least one of the one or more data storage layers. A method of manufacturing the nonvolatile memory device includes preparing the at least one switching device and forming the lower electrode, one or more metal oxide layers, one or more data storage layers, and upper electrode.

公开(公告)号：US07901586B2

公开(公告)日：2011-03-08

申请号：US11882112

申请日：2007-07-30

Applicant: In-kyeong Yoo ,  Soo-hwan Jeong ,  Sun-ae Seo ,  In-sook Kim

Inventor： In-kyeong Yoo ,  Soo-hwan Jeong ,  Sun-ae Seo ,  In-sook Kim

IPC: B44C1/22 ,  H01L21/302

CPC classification number: B82B3/00 ,  B29C59/022 ,  B29C59/026 ,  B29C2059/023 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L21/32139

Abstract: A method of manufacturing a nanochannel-array and a method of fabricating a nanodot using the nanochannel-array are provided. The nanochannel-array manufacturing method includes: performing first anodizing to form a first alumina layer having a channel array formed by a plurality of cavities on an aluminum substrate; etching the first alumina layer to a predetermined depth and forming a plurality of concave portions on the aluminum substrate, wherein each concave portion corresponds to the bottom of each channel of the first alumina layer; and performing second anodizing to form a second alumina layer having an array of a plurality of channels corresponding to the plurality of concave portions on the aluminum substrate. The array manufacturing method makes it possible to obtain finely ordered cavities and form nanoscale dots using the cavities.

Abstract translation: 提供一种制造纳米通道阵列的方法和使用纳米通道阵列制造纳米点的方法。 纳米通道阵列制造方法包括：执行第一阳极氧化以形成具有由铝基板上的多个空腔形成的沟道阵列的第一氧化铝层; 将第一氧化铝层蚀刻到预定深度并在铝基板上形成多个凹部，其中每个凹部对应于第一氧化铝层的每个通道的底部; 以及进行第二阳极氧化以形成具有与所述铝基板上的所述多个凹部对应的多个通道的阵列的第二氧化铝层。 阵列制造方法使得可以使用空腔获得精细排列的空腔并形成纳米级点。

公开(公告)号：US20090045450A1

公开(公告)日：2009-02-19

申请号：US11976250

申请日：2007-10-23

Applicant: June-mo Koo ,  Suk-pil Kim ,  Young-gu Jin ,  Won-joo Kim ,  In-kyeong Yoo ,  Yoon-dong Park

Inventor： June-mo Koo ,  Suk-pil Kim ,  Young-gu Jin ,  Won-joo Kim ,  In-kyeong Yoo ,  Yoon-dong Park

IPC: H01L29/788 ,  H01L21/336

CPC classification number: H01L29/66825 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/7881

Abstract: Provided are a non-volatile memory device, which may have higher integration density, improved or optimal structure, and/or reduce or minimize interference between adjacent cells without using an SOI substrate, and a method of fabricating the non-volatile memory device. The non-volatile memory device may include: a semiconductor substrate comprising a body, and a pair of fins protruding from the body; a buried insulating layer filling between the pair of fins; a pair of floating gate electrodes on outer surfaces of the pair of fins to a height greater than that of the pair of fins; and a control gate electrode on the pair of floating gate electrodes.

Abstract translation: 提供了一种非易失性存储器件，其可以具有更高的集成密度，改进的或最优的结构，和/或减少或最小化相邻单元之间的干扰而不使用SOI衬底，以及制造非易失性存储器件的方法。 非易失性存储器件可以包括：半导体衬底，其包括主体和从主体突出的一对鳍; 埋在绝缘层之间的一对散热片; 一对浮栅电极，其在所述一对翅片的外表面上的高度大于所述一对鳍片的高度; 以及一对浮栅上的控制栅电极。

公开(公告)号：US07355951B2

公开(公告)日：2008-04-08

申请号：US10252085

申请日：2002-09-23

Applicant: In-kyeong Yoo ,  Won-bong Choi ,  Hyun-jung Shin

Inventor： In-kyeong Yoo ,  Won-bong Choi ,  Hyun-jung Shin

IPC: G11B9/00

CPC classification number: G11B9/10 ,  B82Y10/00 ,  G11B9/14 ,  G11B9/1409 ,  G11B9/1418 ,  G11B9/1463 ,  G11B11/115

Abstract: A rapid data recording/reproducing method, a data recording system adopting the same, media for the system, and a tracking method, wherein the recording/reproducing method includes preparing media having a data recording layer in which a phase change is generated through electron absorption, generating electrons using an electron generating source at a position separated from the data recording layer by a predetermined interval, forming a magnetic field on the path of the electrons and cyclotron moving the electrons, recording data through local melting and cooling due to absorption of the electrons by the data recording layer. A micro-tip does not contact the data recording layer during electron collisions therewith, hence no damage is caused by or to the micro-tip. The present invention allows the region where the electron beam reaches the data recording layer to be minimized thereby maximizing the data recording density.

Abstract translation: 一种快速数据记录/再现方法，采用该记录系统的数据记录系统，用于该系统的介质和跟踪方法，其中记录/再现方法包括制备具有通过电子吸收产生相变的数据记录层的介质 在与数据记录层隔开预定间隔的位置处使用电子发生源产生电子，在电子和回旋加速器的移动电子的路径上形成磁场，通过局部熔化和冷却来记录数据 电子由数据记录层。 在与电子碰撞期间，微尖端不接触数据记录层，因此不会对微尖端造成损伤。 本发明允许电子束到达数据记录层的区域最小化，从而最大化数据记录密度。