公开(公告)号：US07332435B2

公开(公告)日：2008-02-19

申请号：US11072038

申请日：2005-03-04

申请人： Chien-Hsueh Shih ,  Shih-Wei Chou ,  Hung-Wen Su ,  Minghsing Tsai

发明人： Chien-Hsueh Shih ,  Shih-Wei Chou ,  Hung-Wen Su ,  Minghsing Tsai

IPC分类号： H01L21/44

CPC分类号： H01L21/28518 ,  H01L29/66507 ,  H01L29/66515 ,  H01L29/6659 ,  H01L29/7833

摘要： A method of forming a semiconductor device comprising: forming a gate dielectric layer over a channel region; forming a gate electrode on the gate dielectric layer; forming source/drain regions substantially aligned with respective edges of the gate electrode with the channel region therebetween; forming a thin metal layer on the source/drain regions; forming a metal alloy layer on the thin metal layer; and transforming the thin metal layer into a low resistance metal silicide.

摘要翻译： 一种形成半导体器件的方法，包括：在沟道区上形成栅介电层; 在所述栅极电介质层上形成栅电极; 形成与所述栅电极的各个边缘基本对准的源极/漏极区域，其间具有沟道区域; 在源/漏区上形成薄金属层; 在所述薄金属层上形成金属合金层; 并将薄金属层转变成低电阻金属硅化物。

公开(公告)号：US20060205214A1

公开(公告)日：2006-09-14

申请号：US11072038

申请日：2005-03-04

申请人： Chien-Hsueh Shih ,  Shih-Wei Chou ,  Hung-Wen Su ,  Minghsing Tsai

发明人： Chien-Hsueh Shih ,  Shih-Wei Chou ,  Hung-Wen Su ,  Minghsing Tsai

IPC分类号： H01L21/44

CPC分类号： H01L21/28518 ,  H01L29/66507 ,  H01L29/66515 ,  H01L29/6659 ,  H01L29/7833

摘要： A method of forming a semiconductor device comprising: forming a gate dielectric layer over a channel region; forming a gate electrode on the gate dielectric layer; forming source/drain regions substantially aligned with respective edges of the gate electrode with the channel region therebetween; forming a thin metal layer on the source/drain regions; forming a metal alloy layer on the thin metal layer; and transforming the thin metal layer into a low resistance metal silicide.

摘要翻译： 一种形成半导体器件的方法，包括：在沟道区上形成栅介电层; 在所述栅极电介质层上形成栅电极; 形成与所述栅电极的各个边缘基本对准的源极/漏极区域，其间具有沟道区域; 在源/漏区上形成薄金属层; 在所述薄金属层上形成金属合金层; 并将薄金属层转变成低电阻金属硅化物。

公开(公告)号：US20070181434A1

公开(公告)日：2007-08-09

申请号：US11783245

申请日：2007-04-06

申请人： Hsien-Ming Lee ,  Jing-Cheng Lin ,  Shing-Chyang Pan ,  Ming-Hsing Tsai ,  Hung-Wen Su ,  Shih-Wei Chou ,  Shau-Lin Shue ,  Kuo-Wei Cheng ,  Ting-Chu Ko

发明人： Hsien-Ming Lee ,  Jing-Cheng Lin ,  Shing-Chyang Pan ,  Ming-Hsing Tsai ,  Hung-Wen Su ,  Shih-Wei Chou ,  Shau-Lin Shue ,  Kuo-Wei Cheng ,  Ting-Chu Ko

IPC分类号： C25D5/34 ,  H01L21/44 ,  C25D3/38

CPC分类号： H01L21/2885 ,  H01L21/76843 ,  H01L21/76861 ,  H01L21/76862 ,  H01L21/76873 ,  H01L21/76877

摘要： A method of electrochemical deposition (ECD) provides a barrier and a seed layer on a substrate. The surfaces of the substrate are pre-treated before a metal layer is electrochemically deposited thereon in an electrochemical plating cell with a physical or a chemical surface treatment process. The electrochemical plating cell is covered by a cap to prevent evaporation of the electrolyte solution. The electrochemical plating cell includes a substrate holder assembly with a lift seal, e.g., with a contact angle θ less than 90° between the lift seal and the substrate. The substrate holder assembly includes a substrate chuck at the rear side of the substrate.

摘要翻译： 电化学沉积（ECD）的方法在衬底上提供阻挡层和种子层。 在将金属层电化学沉积在具有物理或化学表面处理工艺的电化学镀覆电池中之前，对基板的表面进行预处理。 电化学镀覆电池被盖覆盖以防止电解质溶液的蒸发。 电化学电镀单元包括具有提升密封件的衬底保持器组件，例如在提升密封件和衬底之间的接触角θ小于90°。 衬底保持器组件包括在衬底的后侧的衬底卡盘。

公开(公告)号：US06797144B2

公开(公告)日：2004-09-28

申请号：US10141277

申请日：2002-05-08

申请人： Hung-Wen Su ,  Shih-Wei Chou ,  Ching-Hua Hsieh ,  Shau-Lin Shue

发明人： Hung-Wen Su ,  Shih-Wei Chou ,  Ching-Hua Hsieh ,  Shau-Lin Shue

IPC分类号： C25D712

CPC分类号： H01L21/2885 ,  C25D7/123 ,  H01L21/76877

摘要： A method for in-situ cleaning an electrodeposition surface following an electroplating process including providing a first electrode assembly and a second electrode assembly; applying a first current density across the first electrode assembly and the second electrode assembly for carrying out the electrodeposition process; carrying out the electrodeposition process to electrodeposit a metal onto an electrodeposition surface of the second electrode assembly; and, applying a second current density having a second polarity reversed with reference to the first polarity across the first electrode assembly and the second electrode assembly the second current density having a relatively lower current density compared to the first current density.

摘要翻译： 一种用于在电镀工艺之后原位清洁电沉积表面的方法，包括提供第一电极组件和第二电极组件; 在第一电极组件和第二电极组件上施加第一电流密度以执行电沉积过程; 执行电沉积工艺以将金属电沉积到第二电极组件的电沉积表面上; 并且相对于第一电流密度，第二电流密度具有相对于第一极性反转的第二电流密度跨越第一电极组件和第二电极组件，第二电流密度具有相对较低的电流密度。

公开(公告)号：US07226860B2

公开(公告)日：2007-06-05

申请号：US10833154

申请日：2004-04-28

申请人： Hsien-Ming Lee ,  Jing-Cheng Lin ,  Shing-Chyang Pan ,  Ming-Hsing Tsai ,  Hung-Wen Su ,  Shih-Wei Chou ,  Shau-Lin Shue ,  Kuo-Wei Cheng ,  Ting-Chu Ko

发明人： Hsien-Ming Lee ,  Jing-Cheng Lin ,  Shing-Chyang Pan ,  Ming-Hsing Tsai ,  Hung-Wen Su ,  Shih-Wei Chou ,  Shau-Lin Shue ,  Kuo-Wei Cheng ,  Ting-Chu Ko

IPC分类号： H01L21/44

CPC分类号： H01L21/2885 ,  H01L21/76843 ,  H01L21/76861 ,  H01L21/76862 ,  H01L21/76873 ,  H01L21/76877

摘要： A method of electrochemical deposition (ECD) provides a barrier and a seed layer on a substrate. The surfaces of the substrate are pre-treated before a metal layer is electrochemically deposited thereon in an electrochemical plating cell with a physical or a chemical surface treatment process. The electrochemical plating cell is covered by a cap to prevent evaporation of the electrolyte solution. The electrochemical plating cell includes a substrate holder assembly with a lift seal, e.g., with a contact angle θ less than 90° between the lift seal and the substrate. The substrate holder assembly includes a substrate chuck at the rear side of the substrate.

公开(公告)号：US20050245072A1

公开(公告)日：2005-11-03

申请号：US10833154

申请日：2004-04-28

申请人： Hsien-Ming Lee ,  Jing-Cheng Lin ,  Shing-Chyang Pan ,  Ming-Hsing Tsai ,  Hung-Wen Su ,  Shih-Wei Chou ,  Shau-Lin Shue ,  Kuo-Wei Cheng ,  Ting-Chu Ko

发明人： Hsien-Ming Lee ,  Jing-Cheng Lin ,  Shing-Chyang Pan ,  Ming-Hsing Tsai ,  Hung-Wen Su ,  Shih-Wei Chou ,  Shau-Lin Shue ,  Kuo-Wei Cheng ,  Ting-Chu Ko

IPC分类号： H01L21/288 ,  H01L21/4763 ,  H01L21/76 ,  H01L21/768

CPC分类号： H01L21/2885 ,  H01L21/76843 ,  H01L21/76861 ,  H01L21/76862 ,  H01L21/76873 ,  H01L21/76877

摘要： A method of electrochemical deposition (ECD) provides a barrier and a seed layer on a substrate. The surfaces of the substrate are pre-treated before a metal layer is electrochemically deposited thereon in an electrochemical plating cell with a physical or a chemical surface treatment process. The electrochemical plating cell is covered by a cap to prevent evaporation of the electrolyte solution. The electrochemical plating cell includes a substrate holder assembly with a lift seal, e.g., with a contact angle θ less than 90° between the lift seal and the substrate. The substrate holder assembly includes a substrate chuck at the rear side of the substrate.

摘要翻译： 电化学沉积（ECD）的方法在衬底上提供阻挡层和种子层。 在将金属层电化学沉积在具有物理或化学表面处理工艺的电化学镀覆电池中之前，对基板的表面进行预处理。 电化学镀覆电池被盖覆盖以防止电解质溶液的蒸发。 电化学电镀单元包括具有提升密封件的衬底保持器组件，例如在提升密封件和衬底之间的接触角θ小于90°。 衬底保持器组件包括在衬底的后侧的衬底卡盘。

公开(公告)号：US20050097769A1

公开(公告)日：2005-05-12

申请号：US10668291

申请日：2003-09-24

申请人： Jing-Cheng Lin ,  Shing-Chyang Pan ,  Hsien-Ming Lee ,  Hung-Wen Su ,  Shih-Wei Chou ,  Ming-Hsing Tsai ,  Shau-Lin Shue

发明人： Jing-Cheng Lin ,  Shing-Chyang Pan ,  Hsien-Ming Lee ,  Hung-Wen Su ,  Shih-Wei Chou ,  Ming-Hsing Tsai ,  Shau-Lin Shue

IPC分类号： H01L21/677 ,  F26B13/30

CPC分类号： H01L21/67781

摘要： A loadlock. The loadlock for wafers includes a chamber, a pedestal, a retractable shaft, and a bellows. The chamber has a plurality of walls and a bottom surface. The pedestal supports a cassette and is disposed in the chamber. The retractable shaft has a top end and a bottom end. The top end is connected to the pedestal and the bottom end is connected to the bottom surface as a reference for positioning the pedestal. The bellows has a first end and a second end. The first end is disposed on the pedestal and the second end is sealed at the bottom end of the retractable shaft. Preferably, the retractable shaft is fully enclosed by the bellows.

摘要翻译： 一个加载锁 用于晶片的负荷锁包括一个腔室，一个基座，一个伸缩轴和一个波纹管。 腔室具有多个壁和底面。 基座支撑盒并设置在腔室中。 伸缩轴具有顶端和底端。 顶端连接到基座，底端连接到底面作为基座的基准。 波纹管具有第一端和第二端。 第一端设置在基座上，第二端在可伸缩轴的底端被密封。 优选地，可伸缩轴被波纹管完全包围。

公开(公告)号：US20050224359A1

公开(公告)日：2005-10-13

申请号：US10814175

申请日：2004-04-01

申请人： Hung-Wen Su ,  Chien-Hsueh Shih ,  Ming-Hsing Tsai

发明人： Hung-Wen Su ,  Chien-Hsueh Shih ,  Ming-Hsing Tsai

IPC分类号： C25D5/00 ,  C25D7/12 ,  C25D17/00 ,  C25D17/02 ,  H01L21/288

CPC分类号： H01L21/2885 ,  C25D7/123 ,  C25D17/001 ,  C25D17/02 ,  C25D21/02

摘要： Apparatus and method for metal electroplating. The apparatus for metal electroplating includes an electroplating tank for containing an electrolyte at a first temperature, a substrate holder for holding a semiconductor substrate, and a heater for heating the portion of the electrolyte adjacent to the substrate holder to a second temperature higher than the first temperature.

摘要翻译： 金属电镀设备及方法 用于金属电镀的设备包括用于在第一温度下容纳电解质的电镀槽，用于保持半导体衬底的衬底保持器和用于将邻近衬底保持器的部分电解质加热至高于第一温度的第二温度的加热器 温度。

公开(公告)号：US07476306B2

公开(公告)日：2009-01-13

申请号：US10814175

申请日：2004-04-01

申请人： Hung-Wen Su ,  Chien-Hsueh Shih ,  Ming-Hsing Tsai

发明人： Hung-Wen Su ,  Chien-Hsueh Shih ,  Ming-Hsing Tsai

IPC分类号： C25D17/02

CPC分类号： H01L21/2885 ,  C25D7/123 ,  C25D17/001 ,  C25D17/02 ,  C25D21/02

摘要： Apparatus and method for metal electroplating. The apparatus for metal electroplating includes an electroplating tank for containing an electrolyte at a first temperature, a substrate holder for holding a semiconductor substrate, and a heater for heating the portion of the electrolyte adjacent to the substrate holder to a second temperature higher than the first temperature.

摘要翻译： 金属电镀设备及方法 用于金属电镀的设备包括用于在第一温度下容纳电解质的电镀槽，用于保持半导体衬底的衬底保持器和用于将邻近衬底保持器的部分电解质加热至高于第一温度的第二温度的加热器 温度。

公开(公告)号：US20060243599A1

公开(公告)日：2006-11-02

申请号：US10908143

申请日：2005-04-28

申请人： Chien-Hsueh Shih ,  Hung-Wen Su

发明人： Chien-Hsueh Shih ,  Hung-Wen Su

IPC分类号： C25D3/00

CPC分类号： C25D3/02 ,  C25D3/38

摘要： Described are methods of and compositions for electrodepositing copper or other metals onto interconnects of a semiconductor substrate from an electroplating composition containing at least one nitrogen-containing additive. The nitrogen-containing additive has a molecular weight of between 10 and 1000, a concentration of between 5.0 and 10.0 milligrams per liter of the electroplating composition. The methods and compositions result in electroplated copper interconnects that have smooth surfaces that are relatively free of pits and humps.

摘要翻译： 描述了从含有至少一种含氮添加剂的电镀组合物将铜或其它金属电沉积在半导体衬底的互连上的方法和组合物。 含氮添加剂的分子量为10至1000，每升电镀组合物的浓度为5.0至10.0毫克。 这些方法和组合物导致电镀铜互连具有相对没有凹坑和凸起的光滑表面。