公开(公告)号：US07927779B2

公开(公告)日：2011-04-19

申请号：US11271639

申请日：2005-11-10

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: G03F7/004 ,  G03F7/028 ,  G03F7/039

CPC classification number: G03F7/2041 ,  G03F7/004 ,  G03F7/0045 ,  G03F7/0392

Abstract: A photoresist material having a polymer that turns soluble to a base solution in response to reaction with acid. The material includes a photo-acid generator (PAG) that decomposes to form acid in response to radiation energy and a quencher capable of neutralizing acid and having a reduced mobility. The photoresist material can thereby prevent water mark defects from immersion lithography.

Abstract translation: 一种光致抗蚀剂材料，其具有响应于与酸的反应而使其溶解于碱溶液的聚合物。 该材料包括响应于辐射能分解形成酸的光酸产生剂（PAG）和能够中和酸并具有降低迁移率的猝灭剂。 因此，光致抗蚀剂材料可以防止浸没式光刻中的水痕缺陷。

公开(公告)号：US20110059396A1

公开(公告)日：2011-03-10

申请号：US12555145

申请日：2009-09-08

Applicant: Chien-Wei Wang ,  Ching-Yu Chang ,  Tsai-Sheng Gau ,  Burn Jeng Lin

Inventor： Chien-Wei Wang ,  Ching-Yu Chang ,  Tsai-Sheng Gau ,  Burn Jeng Lin

IPC: G03F7/20 ,  G03F7/004

CPC classification number: G03F7/0045 ,  Y10S430/106 ,  Y10S430/114 ,  Y10S430/12 ,  Y10S430/128

Abstract: A method for fabricating an integrated circuit device is disclosed. The method includes providing a substrate; forming a first material layer over the substrate; forming a second material layer over the first material layer, wherein the second material layer comprises a photodegradable base material; and exposing at least a portion of the second material layer.

Abstract translation: 公开了一种用于制造集成电路器件的方法。 该方法包括提供基板; 在所述衬底上形成第一材料层; 在所述第一材料层上形成第二材料层，其中所述第二材料层包含可光降解的基材; 并暴露第二材料层的至少一部分。

公开(公告)号：US20100285410A1

公开(公告)日：2010-11-11

申请号：US12463501

申请日：2009-05-11

Applicant: Chien-Wei Wang ,  Ching-Yu Chang

Inventor： Chien-Wei Wang ,  Ching-Yu Chang

IPC: G03F7/20

CPC classification number: G03F7/40 ,  H01L21/0273 ,  H01L21/266 ,  H01L21/31133 ,  H01L21/31138

Abstract: The present disclosure provides a method for manufacturing a semiconductor device. The method includes coating a photoresist on a substrate. The photoresist is exposed to radiation. The radiation exposed photoresist is baked. The radiation exposed and baked photoresist is developed to create an image pattern. The image pattern is treated with a treating material. An ion implantation process is performed to the substrate and the treated image pattern. The image pattern is stripped from the substrate. A carbon atom ratio of the treating material is less than a carbon atom ratio of the photoresist.

Abstract translation: 本公开提供了一种用于制造半导体器件的方法。 该方法包括在基底上涂覆光致抗蚀剂。 光致抗蚀剂暴露于辐射。 辐射曝光的光致抗蚀剂被烘烤。 辐射曝光和烘烤的光致抗蚀剂被开发以产生图像图案。 用处理材料处理图像图案。 对基板和经处理的图像图案执行离子注入工艺。 图案图案从基板剥离。 处理材料的碳原子比小于光致抗蚀剂的碳原子比。

公开(公告)号：US07759253B2

公开(公告)日：2010-07-20

申请号：US11563805

申请日：2006-11-28

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: H01L21/302 ,  H01L21/461

CPC classification number: H01L21/76816 ,  G03F7/0035 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/3086 ,  H01L21/3088

Abstract: A method of lithography patterning includes forming a first material layer on a substrate; forming a first patterned resist layer including at least one opening therein on the first material layer; forming a second material layer on the first patterned resist layer and the first material layer; forming a second patterned resist layer including at least one opening therein on the second material layer; and etching the first and second material layers uncovered by the first and second patterned resist layers.

Abstract translation: 光刻图案的方法包括在基底上形成第一材料层; 在所述第一材料层上形成包括至少一个开口的第一图案化抗蚀剂层; 在所述第一图案化抗蚀剂层和所述第一材料层上形成第二材料层; 在所述第二材料层上形成包括其中的至少一个开口的第二图案化抗蚀剂层; 以及蚀刻由第一和第二图案化抗蚀剂层未覆盖的第一和第二材料层。

公开(公告)号：US07732123B2

公开(公告)日：2010-06-08

申请号：US10995653

申请日：2004-11-23

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: G03F7/26

CPC classification number: G03F7/2041 ,  G03F7/168 ,  H01L21/67051 ,  H01L21/67057

Abstract: A method comprises forming a photoresist on a substrate, rinsing the photoresist using a rinse liquid agitated with at least one megasonic source, exposing the photoresist to radiation while immersed in a liquid, and developing the photoresist.

Abstract translation: 一种方法包括在基底上形成光致抗蚀剂，使用用至少一个兆声源驱动的漂洗液冲洗光致抗蚀剂，在浸入液体中时将光致抗蚀剂暴露于辐射，并显影光致抗蚀剂。

公开(公告)号：US07579121B2

公开(公告)日：2009-08-25

申请号：US11245522

申请日：2005-10-07

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: G03F1/00 ,  G03F1/14

CPC classification number: G03F1/36

Abstract: An optical proximity correction photomask comprises a transparent substrate, a main feature having a first transmitivity disposed on the transparent substrate and at least one assist feature having a second transmitivity disposed to each side of the main feature and on the transparent substrate, wherein the first transmitivity is not equal to the second transmitivity.

Abstract translation: 光学邻近校正光掩模包括透明基板，具有设置在透明基板上的第一透射率的主要特征以及设置在主要特征的每一侧和透明基板上的具有第二透射性的至少一个辅助特征，其中第一透射率 不等于第二个传输性。

公开(公告)号：US07566525B2

公开(公告)日：2009-07-28

申请号：US11152559

申请日：2005-06-14

Applicant: Chin-Hsiang Lin ,  Ching-Yu Chang

Inventor： Chin-Hsiang Lin ,  Ching-Yu Chang

IPC: G03F1/00 ,  H01L21/00

CPC classification number: G03F7/405

Abstract: A method is disclosed for forming a photoresist pattern with enhanced etch resistance on a semiconductor substrate. A photoresist pattern is first formed on the substrate. A silicon-containing polymer layer is deposited over the photoresist pattern on the substrate. A thermal treatment is performed to form a cross-linked anti-etch shielding layer between the photoresist pattern and the silicon-containing layer. Then, the remaining silicon containing layer is removed. A plasma treatment is performed in order to increase an etch resistance of the cross-linked anti-etch shielding layer and the photoresist pattern.

Abstract translation: 公开了用于在半导体衬底上形成具有增强的耐蚀刻性的光致抗蚀剂图案的方法。 首先在基板上形成光致抗蚀剂图案。 在基板上的光致抗蚀剂图案上沉积含硅聚合物层。 进行热处理以在光致抗蚀剂图案和含硅层之间形成交联的抗蚀刻屏蔽层。 然后，除去剩余的含硅层。 执行等离子体处理以增加交联的抗蚀刻屏蔽层和光刻胶图案的耐蚀刻性。

公开(公告)号：US20080158451A1

公开(公告)日：2008-07-03

申请号：US12004180

申请日：2007-12-20

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: G02F1/13363 ,  G02F1/1333

CPC classification number: G02F1/1393 ,  G02F1/13363 ,  G02F1/133707 ,  G02F2001/133638 ,  G02F2413/04 ,  G02F2413/06

Abstract: Systems for displaying images are provided. A representative system comprises a dual domain electrical compensated birefringence liquid crystal display (ECB-LCD) panel. A pair of uniaxial 1/4λ compensation films is separately disposed on both outer surfaces of the dual domain ECB-LCD panel. A pair of uniaxial 1/2λ compensation films is separately disposed on outer surfaces of the pair of uniaxial 1/4λ compensation films. A pair of polarizers is separately disposed on both outer surfaces of the pair of the uniaxial 1/2λ optical compensation films.

Abstract translation: 提供显示图像的系统。 代表性的系统包括双域电补偿双折射液晶显示器（ECB-LCD）面板。 一对单轴1 /4λ补偿膜分别设置在双域ECB-LCD面板的两个外表面上。 一对单轴1 /2λ补偿膜分别设置在该对单轴1/4波导补偿膜的外表面上。 一对偏振器分别设置在该对单轴1/2波长光学补偿膜的两个外表面上。

公开(公告)号：US20070254244A1

公开(公告)日：2007-11-01

申请号：US11416264

申请日：2006-05-01

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: G03F7/26

CPC classification number: G03F7/0035 ,  G03F7/095 ,  G03F7/0955 ,  G03F7/38

Abstract: The present invention includes a method of forming a resist structure comprising depositing a first photoresist material over a first layer. Selectively exposing portions of the first layer to light to provide exposed portions and unexposed portions in the first photoresist layer. Without developing the first photoresist layer, depositing a second photoresist layer over the first photoresist layer including both exposed portions and unexposed portions. The second photoresist layer being capable of crosslinking in the presence of an acid. Treating the first photoresist layer to cause an acid from only one of the exposed portions or unexposed portions of the first photoresist layer producing a plurality of crosslinked portions of the second photoresist layer. Thereafter, developing the second photoresist layer to remove uncrosslinked portions.

Abstract translation: 本发明包括形成抗蚀剂结构的方法，包括在第一层上沉积第一光致抗蚀剂材料。 将第一层的部分选择性地曝光以在第一光致抗蚀剂层中提供暴露部分和未曝光部分。 在不显影第一光致抗蚀剂层的情况下，在包括两个曝光部分和未曝光部分的第一光刻胶层上沉积第二光致抗蚀剂层。 第二光致抗蚀剂层能够在酸的存在下交联。 处理第一光致抗蚀剂层以仅产生来自第一光致抗蚀剂层的暴露部分中的一个或未曝光部分的酸，产生第二光致抗蚀剂层的多个交联部分。 此后，显影第二光致抗蚀剂层以去除未交联的部分。

公开(公告)号：US20070093067A1

公开(公告)日：2007-04-26

申请号：US11256711

申请日：2005-10-24

Applicant: Ching-Yu Chang ,  Burn Lin

Inventor： Ching-Yu Chang ,  Burn Lin

IPC: H01L21/302 ,  H01L21/461

CPC classification number: H01L21/67046 ,  H01L21/67051 ,  H01L21/6708

Abstract: A method of processing a semiconductor wafer can be used prior to an immersion lithography process. The method includes providing a layer of organic photoresist onto a surface of the semiconductor wafer and removing a portion of the photoresist from an outer edge of the wafer using an edge-bead removal process. The outer edge of the wafer is then cleaned using one or more processes, including a mechanical scrubber/cleaner, mega-sonic power, de-ionized water and/or chemical solution.

Abstract translation: 在浸没光刻工艺之前可以使用半导体晶片的处理方法。 该方法包括在半导体晶片的表面上提供一层有机光致抗蚀剂，并使用边缘珠去除工艺从晶片的外边缘去除一部分光致抗蚀剂。 然后使用一个或多个工艺（包括机械洗涤器/清洁器，超声功率，去离子水和/或化学溶液）清洁晶片的外边缘。