公开(公告)号：US20100097596A1

公开(公告)日：2010-04-22

申请号：US12356849

申请日：2009-01-21

Applicant: Chiang-Lin Shih ,  Chun-Yen Huang

Inventor： Chiang-Lin Shih ,  Chun-Yen Huang

IPC: G03B27/32

CPC classification number: G03F7/70358

Abstract: A scanning exposure method is provided. A mask and a substrate are oppositely moved along a direction. The mask and the substrate are moved in at least two different uniform relative velocities during a one shot exposure, thus producing an exposed shot area of an expected size on the substrate.

Abstract translation: 提供扫描曝光方法。 掩模和基板沿着一个方向相反地移动。 在单次曝光期间，掩模和基底以至少两个不同的均匀相对速度移动，从而在基底上产生预期尺寸的曝光的照射区域。

公开(公告)号：US20080251933A1

公开(公告)日：2008-10-16

申请号：US11845746

申请日：2007-08-27

Applicant: Kuo-Yao Cho ,  Wen-Bin Wu ,  Chiang-Lin Shih ,  Chia-Cheng Lin

Inventor： Kuo-Yao Cho ,  Wen-Bin Wu ,  Chiang-Lin Shih ,  Chia-Cheng Lin

IPC: H01L23/525 ,  H01L23/52

CPC classification number: H01L23/528 ,  H01L27/10891 ,  H01L2924/0002 ,  H01L2924/0001 ,  H01L2924/00

Abstract: A metal interconnect structure includes a plurality of first plugs adjacent to each other, a first metal line extending in a first direction and contacting each first plug to form a first section with a tapered second section in between, and a second plug adjacent to the second section, both in a second direction normal to the first direction.

Abstract translation: 金属互连结构包括彼此相邻的多个第一插塞，第一金属线在第一方向上延伸并接触每个第一插塞以形成第一部分，第一部分之间具有锥形第二部分，第二插头与第二插头相邻 在第一方向垂直的第二方向上。

公开(公告)号：US06979638B2

公开(公告)日：2005-12-27

申请号：US10783014

申请日：2004-02-23

Applicant: Tse-Yao Huang ,  Yi-Nan Chen ,  Chiang-Lin Shih

Inventor： Tse-Yao Huang ,  Yi-Nan Chen ,  Chiang-Lin Shih

IPC: H01L21/3213 ,  H01L21/4763 ,  H01L21/768

CPC classification number: H01L21/32139 ,  H01L21/76838 ,  H01L21/7685 ,  H01L21/76865 ,  H01L2221/1078

Abstract: Disclosed is a method for forming conducting wire and contact opening in a semiconductor device. The method of the present invention utilizes the formation of metal regions as a mask for etching a conductive layer of the semiconductor device to remove unnecessary portions so as to form conducting wires. The method of the present invention can reduce the necessary thickness of photoresist and well control the via resistance.

Abstract translation: 公开了一种在半导体器件中形成导线和接触开口的方法。 本发明的方法利用金属区域的形成作为用于蚀刻半导体器件的导电层的掩模，以除去不需要的部分以形成导线。 本发明的方法可以减少必需的光致抗蚀剂厚度并且很好地控制通孔电阻。

公开(公告)号：US20050186775A1

公开(公告)日：2005-08-25

申请号：US10783014

申请日：2004-02-23

Applicant: Tse-Yao Huang ,  Yi-Nan Chen ,  Chiang-Lin Shih

Inventor： Tse-Yao Huang ,  Yi-Nan Chen ,  Chiang-Lin Shih

IPC: H01L21/3213 ,  H01L21/4763 ,  H01L21/768

CPC classification number: H01L21/32139 ,  H01L21/76838 ,  H01L21/7685 ,  H01L21/76865 ,  H01L2221/1078

Abstract: Disclosed is a method for forming conducting wire and contact opening in a semiconductor device. The method of the present invention utilizes the formation of metal regions as a mask for etching a conductive layer of the semiconductor device to remove unnecessary portions so as to form conducting wires. The method of the present invention can reduce the necessary thickness of photoresist and well control the via resistance.

Abstract translation: 公开了一种在半导体器件中形成导线和接触开口的方法。 本发明的方法利用金属区域的形成作为用于蚀刻半导体器件的导电层的掩模，以除去不需要的部分以形成导线。 本发明的方法可以减少必需的光致抗蚀剂厚度并且很好地控制通孔电阻。

公开(公告)号：US07998660B2

公开(公告)日：2011-08-16

申请号：US12253235

申请日：2008-10-16

Applicant: Chiang-Lin Shih ,  Kuo-Yao Cho

Inventor： Chiang-Lin Shih ,  Kuo-Yao Cho

IPC: G03F7/26

CPC classification number: G03F7/70466 ,  G03F7/70425 ,  G03F7/70558 ,  G03F7/70625

Abstract: An exposure method is disclosed. A wafer coated with a photoresist layer having an exposure threshold dose is provided. The wafer has at least a central region and a peripheral region. Then, a compensating light beam having a first dose directs on the photoresist layer within the peripheral region. Next, a patterned light beam having a second dose is then projected, in a step-and-scan manner, onto the photoresist layer, thereby exposing the photoresist layer. The total dose of the first energy and the second energy is above than the exposure threshold dose.

Abstract translation: 公开了曝光方法。 提供涂覆有具有暴露阈值剂量的光致抗蚀剂层的晶片。 晶片至少具有中心区域和周边区域。 然后，具有第一剂量的补偿光束指向周边区域内的光致抗蚀剂层。 接下来，将具有第二剂量的图案化光束以逐步扫描的方式投射到光致抗蚀剂层上，由此曝光光致抗蚀剂层。 第一能量和第二能量的总剂量高于暴露阈值剂量。

公开(公告)号：US07723181B2

公开(公告)日：2010-05-25

申请号：US11616849

申请日：2006-12-27

Applicant: An-Hsiung Liu ,  Chiang-Lin Shih ,  Wen-Bin Wu ,  Hui-Min Mao ,  Lin-Chin Su ,  Pei-Ing Lee

Inventor： An-Hsiung Liu ,  Chiang-Lin Shih ,  Wen-Bin Wu ,  Hui-Min Mao ,  Lin-Chin Su ,  Pei-Ing Lee

IPC: H01L21/8242

CPC classification number: H01L29/66181 ,  G03F7/70633 ,  G03F9/7076 ,  G03F9/708 ,  G03F9/7084 ,  H01L23/544 ,  H01L27/1087 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A small-size (w

Abstract translation: 提出了与“k1工艺”结合的小尺寸（w <0.5微米）对准标记，其特别适用于制造需要高精度AA-DT和GC-DT重叠对准的沟槽电容器DRAM器件。 利用“k1工艺”来蚀刻散布在对准标记沟槽中的多晶硅，并刷新沟槽轮廓，从而提高覆盖对准精度和精度。

公开(公告)号：US07419882B2

公开(公告)日：2008-09-02

申请号：US11160683

申请日：2005-07-05

Applicant: Yuan-Hsun Wu ,  An-Hsiung Liu ,  Chiang-Lin Shih ,  Pei-Ing Lee ,  Hui-Min Mao ,  Lin-Chin Su

Inventor： Yuan-Hsun Wu ,  An-Hsiung Liu ,  Chiang-Lin Shih ,  Pei-Ing Lee ,  Hui-Min Mao ,  Lin-Chin Su

IPC: H01L21/20

CPC classification number: G03F9/7084 ,  G03F7/70633 ,  G03F9/708 ,  H01L23/544 ,  H01L27/1087 ,  H01L2223/54453 ,  H01L2924/0002 ,  Y10S438/975 ,  H01L2924/00

Abstract: A small-size (w

Abstract translation: 提出了与“k1工艺”结合的小尺寸（w <0.5微米）对准标记，其特别适用于需要高精度AA-DT对准的沟槽电容器DRAM器件的制造。 利用“k1工艺”来蚀刻散布在对准标记沟槽中的多晶硅，并且在AA图案转印之前刷新沟槽轮廓，从而提高晶片对准精度和精度。

公开(公告)号：US20070178410A1

公开(公告)日：2007-08-02

申请号：US11453764

申请日：2006-06-14

Applicant: Chiang-Lin Shih ,  Chih-Li Chen

Inventor： Chiang-Lin Shih ,  Chih-Li Chen

IPC: G03F7/20

CPC classification number: G03F7/2002 ,  G03F1/50 ,  H01L21/0274 ,  H01L21/76807

Abstract: A method of forming a three-dimensional lithographic pattern is provided. The method includes providing a substrate. A first photoresist layer is formed on the substrate. The first photoresist layer corresponds to a first exposure removal dose. A second photoresist layer is formed on the first photoresist layer. The second photoresist layer corresponds to a second exposure removal dose, which is different from the first exposure removal dose. A reticle with multiple regions of different light transmittances is provided. Through the reticle, the first and second photoresist layers are exposed to form a first removable region in the first photoresist layer and a second removable region in the second photoresist layer. The second removable region is different from the first removable region. The first and second photoresist layers are then developed to remove the first and second removable regions.

Abstract translation: 提供了形成三维光刻图案的方法。 该方法包括提供基板。 在基板上形成第一光致抗蚀剂层。 第一光致抗蚀剂层对应于第一曝光去除剂量。 在第一光致抗蚀剂层上形成第二光致抗蚀剂层。 第二光致抗蚀剂层对应于与第一曝光去除剂量不同的第二曝光去除剂量。 提供具有不同透光率的多个区域的掩模版。 通过掩模版，第一和第二光致抗蚀剂层被暴露以在第一光致抗蚀剂层中形成第一可移除区域，并在第二光致抗蚀剂层中形成第二可除去区域。 第二可移除区域与第一可移除区域不同。 然后显影第一和第二光致抗蚀剂层以除去第一和第二可除去区域。