-
公开(公告)号：US4718069A
公开(公告)日：1988-01-05
申请号：US924195
申请日：1986-10-27
CPC分类号： H01S5/16 , H01S5/4068
摘要： A semiconductor laser array having a single lobe far field intensity pattern radiating normal to the laser's light emitting facet. The laser array has a plurality of semiconductor layers disposed over a substrate, at least one of the layers forming an active region for lightwave generation and propagation under lasing conditions. A plurality of adjacent spaced apart optical waveguides defined by waveguides and interconnecting waveguides directly couples lightwaves propagating in each waveguide into an adjacent waveguide. The waveguides are characterized by separations which are not equal at the light emitting facet but are selectively varied so that the sampling function has only a single central lobe. In the preferred embodiment, separations are greatest for edge located and smallest for centrally located waveguides. Interconnecting waveguides connect adjacent waveguides at respective Y-shaped junctions, the junctions being symmetric at least on the output side of the laser.
摘要翻译： 一种半导体激光器阵列，其具有垂直于激光器的发光小面辐射的单波瓣远场强度图案。 激光器阵列具有设置在衬底上的多个半导体层，所述层中的至少一个在激光条件下形成用于光波生成和传播的有源区域。 由波导和互连波导限定的多个相邻间隔开的光波导直接将在每个波导中传播的光波耦合到相邻波导中。 波导的特征在于在发光小面处不相等但是选择性地变化的分离，使得采样函数仅具有单个中心波瓣。 在优选实施例中，对于位于中心的波导的边缘定位和最小的间隔最大。 互连波导在相应的Y形结处连接相邻的波导，该结至少在激光器的输出侧是对称的。
-
公开(公告)号：US4675709A
公开(公告)日：1987-06-23
申请号：US820600
申请日：1986-01-21
IPC分类号： H01L29/15 , H01L33/06 , H01S5/34 , H01L29/14 , H01L29/205 , H01L29/207 , H01L33/00
CPC分类号： H01L33/06 , B82Y20/00 , H01L29/155 , H01S5/34 , Y10S148/023 , Y10S148/04 , Y10S148/072 , Y10S148/119 , Y10S148/16
摘要： A semiconductor quantized layered structure comprising first and second different semiconductor materials comprising compound semiconductors from both the Group III and Group V elements and forming a plurality of alternate layers, each interfaced to its adjacent layer in a semiconductor homojunction or heterojunction. The bottom of the conduction bands of the first and second materials are at different energy levels and the tops of the valence bands of the first and second materials are at different energy levels. The bottoms of the conduction bands of the first and second materials form a plurality of serially arranged potential wells and barriers due to differences in the band structures of the different materials forming alternate layers and the interfacing of the layers forming heterojunctions so that the thinness of the layers will spatially localize electrons to obtain quantized electron states in one dimension transverse to the longitudinal extent of said layers. The invention is characterized in that the first material is an indirect bandgap material and optimized luminescence efficiency of the first material is achieved by adjusting the thickness of the layers comprising the first material to be less than the mean free path of an electron in the first material in the absence of the second material. Three dimensional quantized electron states may be provided in certain layers of the quantized layered structure with the incorporation of an impurity, such as, a donor or acceptor impurity or an isoelectronic impurity forming isoelectronic centers (IEC) in the indirect bandgap semiconductor material. Such an incorporation may be in each layer of the first and second materials or only in the alternate layers of the lower indirect bandgap material. Alternatively, the impurity may be in a predetermined periodic alternate of layers of the same indirect bandgap material, e.g., in one layer out of three, in alternate layers of a plurality of layers or in every n.sup.th layer or every n.sup.th group of layers where n may be any integer.
-
公开(公告)号：US4603421A
公开(公告)日：1986-07-29
申请号：US444145
申请日：1982-11-24
申请人： Donald R. Scifres , Eric G. Rawson
发明人： Donald R. Scifres , Eric G. Rawson
CPC分类号： H04B10/2507 , G02B6/2808 , G02B6/425 , H01S5/4031 , H01S5/4025 , H01S5/4056
摘要： A multi-emitter extended source solid state laser designed to omit light beams at multiple wavelengths within a narrow total spectral bandwidth, that is, a relatively incoherent composite output beam of narrow total spectral bandwidth, is used as the input to a multimode optical fiber of an optic communications link or network. By providing an incoherent composite laser input beam to the fiber, modal noise due to coherence effects are virtually eliminated so that such effects no longer affect network performance. In addition, because the source is extended, a more uniform illumination of the fiber face is achieved. An exemplary multi-emitter laser would consist of an array of simultaneously driven emitting regions or cavities which operate in multiple longitudinal modes.
摘要翻译： 多发射器扩展源固态激光器被设计为在狭窄的总光谱带宽内省略多个波长的光束，即窄的总光谱带宽的相对非相干的复合输出光束作为多模光纤的输入 光通信链路或网络。 通过向光纤提供非相干复合激光输入光束，实际上消除了由于相干效应引起的模态噪声，使得这种效应不再影响网络性能。 另外，由于光源被延伸，所以实现了光纤面的更均匀的照明。 示例性的多发射器激光器将由以多个纵向模式操作的同时驱动的发射区域或空腔的阵列组成。
-
公开(公告)号：USRE31806E
公开(公告)日：1985-01-15
申请号：US473304
申请日：1983-03-08
IPC分类号： H01S5/40
CPC分类号： H01S5/4068
摘要： A monolithic laser device produces a plurality of spatially displaced emitting cavities in an active layer of a semiconductor body acting as a waveguide for light wave propagation under lasing conditions. Various means are disclosed to deflect and directly couple a portion of the optical wave propagation into one or more different spatially displaced emitting cavities to improve coherence and reduce beam divergence.
-
公开(公告)号：US4428647A
公开(公告)日：1984-01-31
申请号：US439255
申请日：1982-11-04
IPC分类号： G02B27/00 , G02B3/00 , G02B6/42 , G11B7/14 , H01S3/00 , H01S5/00 , H01S5/40 , G01J1/08 , G03H1/22
CPC分类号： G02B3/005 , B41J2/451 , G02B6/4206 , G02B6/4249 , G02B6/425 , G11B7/14 , H01S5/4025 , G02B3/0087 , H01S3/005 , H01S5/005
摘要： Each laser of a semiconductor laser array of an optical system has its own lens mounted adjacent to it in the space between the laser array and the objective lens of the system. The purpose of the lenses is to change the angle of divergence of the light beams leaving the emitting surface of the laser array so that the light beams can be collected efficiently by the objective lens, thereby providing significant beam power at the light sensitive medium (optical disk, photoconductor, etc.) of the optical system. The focusing power of each lens is chosen to form virtual images behind the emitting surface with spacings approximately corresponding to the spacings of the light beams emitted by the laser array, but with the emitter image size substantially magnified.
摘要翻译： 光学系统的半导体激光器阵列的每个激光器具有在激光器阵列和系统的物镜之间的空间中相邻安装的其自己的透镜。 透镜的目的是改变离开激光器阵列的发射表面的光束的发散角，使得可以通过物镜有效地收集光束，从而在光敏介质（光学器件）处提供显着的光束功率 光盘，光电导体等）。 选择每个透镜的聚焦能力以在发射表面后面形成虚拟图像，其间隔大致对应于由激光器阵列发射的光束的间隔，但是发射器图像尺寸基本上被放大。
-
公开(公告)号：US4386827A
公开(公告)日：1983-06-07
申请号：US200756
申请日：1980-10-27
摘要： An electrooptical scanning device for deflection of an optical beam of light across an image plane. The device comprises a body of electrooptical crystal material and a periodic array of parallel, spaced electrodes associated with one surface of the body. A light beam entering the crystal body is caused to interact with electric fields established at the one surface by step applied voltages to the electrode array that influence the deflection of the light beam at the moment of total internal reflection at the one surface. By varying the magnitude of the applied voltages across the electrodes, a corresponding approximation of a desired phase retardation can be produced along the phase front of the light beam. The phase retardation across the light beam can be designed to produce a linear phase front angled beam or can be designed to produce a curvalinear phase front forming a focused spot at the image plane. With the changing of the magnitude of the applied voltages across the electrode array, the beam or spot may be made to move about or scan across the image plane.
摘要翻译： 一种电光扫描装置，用于将光束偏转穿过图像平面。 该装置包括电光晶体材料体和与身体的一个表面相关联的平行的间隔开的电极的周期性阵列。 使进入晶体的光束与在一个表面逐渐施加的电压建立的电场相互作用，电极阵列影响在一个表面处的全内反射时光束的偏转。 通过改变跨过电极的施加电压的大小，可以沿着光束的相位前沿产生期望的相位延迟的对应近似。 光束上的相位延迟可被设计成产生线性相位前角成角度的光束，或者可被设计成产生在图像平面上形成聚焦光点的标光相位前沿。 随着跨过电极阵列的施加电压的幅度的变化，可以使光束或光点在图像平面上移动或扫描。
-
公开(公告)号：US4293826A
公开(公告)日：1981-10-06
申请号：US34237
申请日：1979-04-30
IPC分类号： H01L31/12 , H01S5/00 , H01S5/02 , H01S5/022 , H01S5/026 , H01S5/0683 , H01S5/18 , H01S5/40 , H01S3/19
CPC分类号： H01S5/4025 , H01S5/02252 , H01S5/005 , H01S5/02284 , H01S5/02292 , H01S5/0683
摘要： A semiconductor injection laser is mounted on a silicon substrate. An optical detector is integral to the substrate and aligned at oblique angles relative to the path of the light from one of the light emitting facets of the laser. The detector may be connected to the current control circuit for the laser to provide a feedback signal which is proportional to the light deflected from the facet. The transversely disposed detector may also function to detect light from another source as part of an optical communication system. The detector may be a Schottky barrier or a p-n junction.
摘要翻译： 半导体注入激光器安装在硅衬底上。 光学检测器与衬底成一体并且相对于来自激光器的一个发光小面的光的路径以倾斜角对准。 检测器可以连接到用于激光器的电流控制电路，以提供与从小面偏转的光成正比的反馈信号。 横向布置的检测器还可以用于检测来自另一个源的光作为光通信系统的一部分。 检测器可以是肖特基势垒或p-n结。
-
公开(公告)号：US4219785A
公开(公告)日：1980-08-26
申请号：US918740
申请日：1978-06-26
CPC分类号： H01S5/4068 , H01S5/0425 , H01S5/06243 , H01S5/4075
摘要： A light beam scanner of the moving interference fringe pattern type which includes a body of semiconductor material having a source of coherent radiation and wave guides for guiding the coherent radiation along a plurality of spatially displaced paths which are optically uncoupled, and means associated with the spatially displaced paths for producing relative phase changes between radiation in the different paths whereby interference fringes in the far field are spatially scanned. In addition, wavelength modulation of the laser over a range of about 80 A can be achieved. The source of the coherent radiation can be a single laser or a plurality of optically coupled lasers, and the optical uncoupling can be achieved by spatial displacement of the paths or by insertion of a high loss medium between the paths.
摘要翻译： 一种移动干涉条纹图案类型的光束扫描器，其包括具有相干辐射源的半导体材料体，以及用于沿光学非耦合的多个空间位移路径引导相干辐射的波导，以及与空间相关联的装置 用于在不同路径中的辐射之间产生相对相位变化的偏移路径，由此在远场中的干涉条纹被空间扫描。 此外，可以实现在大约80A范围内的激光器的波长调制。 相干辐射的源可以是单个激光器或多个光学耦合的激光器，并且光学解耦可以通过路径的空间位移或通过在路径之间插入高损耗介质来实现。
-
19.发明授权
公开(公告)号：US4185256A
公开(公告)日：1980-01-22
申请号：US869190
申请日：1978-01-13
CPC分类号： H01L33/0025 , H01S5/10 , H01S5/1032 , H01S5/0654 , H01S5/1021 , H01S5/2235 , H01S5/4031
摘要： Mode control both for longitudinal and fundamental transverse modes can be achieved by employing a mesa structure on the laser substrate during fabrication. The mesa will provide significant variations in the thickness of one or more heterostructure waveguiding layers that may be fabricated on the mesa formed substrate. As a result, the equivalent index of refraction for each waveguiding layer will be different. For longitudinal mode operation, a branching directional coupler can be directly fabricated during preferential LPE growth due to the presence of the mesa formed on the substrate. For fundamental transverse mode operation, oscillation can be restricted to a high gain region in a waveguiding layer due to the presence of the mesa and thickness variation and curvature in the active layer. Connected or juxtaposed stripe contact geometry can also be employed to provide a multicavity effect in a light waveguiding layer to enhance longitudinal mode selectivity.
摘要翻译： 可以通过在制造期间在激光基板上采用台面结构来实现纵向和基本横向模式的模式控制。 台面将提供可以在台面形成的基板上制造的一个或多个异质结构波导层的厚度的显着变化。 结果，每个波导层的等效折射率将是不同的。 对于纵向模式操作，由于在基板上形成的台面的存在，可以在优先LPE生长期间直接制造分支定向耦合器。 对于基本横向模式操作，由于在活性层中存在台面和厚度变化和曲率，振荡可以被限制在波导层中的高增益区域。 连接或并置的条状接触几何形状也可用于在光波导层中提供多腔效应以增强纵向模式选择性。
-
公开(公告)号：US4099999A
公开(公告)日：1978-07-11
申请号：US805661
申请日：1977-06-13
CPC分类号： H01S5/2232 , H01L29/0642
摘要： A method of making a diode laser in which a pump current confining channel is formed on the substrate side of a diode laser prior to growth of the active or recombination region of the diode laser. The current confining channel is formed by providing, by diffusion, a rectifying junction on a substrate surface and then forming, by etching, a narrow channel completely through a central portion of the diffused layer and the rectifying junction. The remaining layers of the diode laser are then successively grown. The portions of the rectifying junction on both sides of the channel are reverse biased when the primary junction of the diode laser is forward biased whereby pump current flow is confined to a path through the channel.
摘要翻译： 一种制造二极管激光器的方法，其中在二极管激光器的有源或复合区域生长之前在二极管激光器的衬底侧上形成泵电流限制通道。 通过扩散在基板表面上提供整流结，然后通过蚀刻完全通过扩散层和整流结的中心部分的窄通道来形成电流限制通道。 然后连续地生长二极管激光器的其余层。 当二极管激光器的主结点被正向偏置时，通道两侧的整流结部分被反向偏置，由此泵浦电流被限制在通过通道的路径上。
-
-
-
-
-
-
-
-
-
搜索结果
146 条记录 (耗时 0.021 秒)
