公开(公告)号：US5523878A

公开(公告)日：1996-06-04

申请号：US268485

申请日：1994-06-30

Applicant: Robert M. Wallace ,  Douglas A. Webb ,  Bruce E. Gnade

Inventor： Robert M. Wallace ,  Douglas A. Webb ,  Bruce E. Gnade

IPC: B81B3/00 ,  B81C1/00 ,  G02B6/122 ,  G02B26/08 ,  G02B26/00

CPC classification number: B82Y30/00 ,  B82Y10/00 ,  G02B26/0841 ,  G02B6/122

Abstract: A method of forming of a monomolecular coating (19) for surfaces of contacting elements (11, 17) of micro-mechanical devices (10), specifically, devices that have moving elements that contact other elements and that tend to stick as a result of the contact. The method uses liquid deposition, with the device being placed in a solution that contains a precursor to the formation of the coating. The precursor is chosen based on coordination chemistry between the precursor and the surface to be coated.

Abstract translation: 形成用于微机械装置（10）的接触元件（11,17）的表面的单分子涂层（19）的方法，具体地说，具有与其它元件接触并且由于 联系人。 该方法使用液体沉积，该装置被放置在包含形成涂层的前体的溶液中。 基于前体和待涂覆表面之间的配位化学选择前体。

公开(公告)号：US4894352A

公开(公告)日：1990-01-16

申请号：US263162

申请日：1988-10-26

Applicant: Andrew P. Lane ,  Douglas A. Webb ,  Gene R. Frederick

Inventor： Andrew P. Lane ,  Douglas A. Webb ,  Gene R. Frederick

IPC: C23C16/34 ,  C23C16/30 ,  C23C16/40 ,  H01L21/316

CPC classification number: C23C16/402 ,  Y10S148/114 ,  Y10S148/118

Abstract: In a low-pressure reactor, the addition of nitrogen trifluoride to a gaseous organosilicon compound such as tetraethoxysilane (TEOS) or tetramethylcyclotetroxysilane (TMCTS) results in surprisingly enhanced silicon dioxide deposition rates. The oxide deposited using this process also has the capability of filling features having aspects ratios up to at least 1.0, and may exhibit low mobile ion concentrations. The process is also applicable for depositing other silicon-containing films such as polysilicon and silicon nitride.

公开(公告)号：US07053930B2

公开(公告)日：2006-05-30

申请号：US10186212

申请日：2002-06-27

Applicant: Douglas A. Webb ,  David T. Amm ,  Paul A. Alioshin ,  David A. LeHoty ,  Mark A. Koenig

Inventor： Douglas A. Webb ,  David T. Amm ,  Paul A. Alioshin ,  David A. LeHoty ,  Mark A. Koenig

IPC: H04N5/74

CPC classification number: G03B27/52

Abstract: One embodiment disclosed relates to a method for bi-directional progressive scanning in a display system. The method includes receiving image data for an image to be displayed, forward scanning the image data in a first direction using a linear array of controllable light elements, and reverse scanning the image data in a second direction opposite to the first direction using the linear array. Another embodiment disclosed relates to an apparatus for bi-directional progressive scanning. The apparatus includes a linear array of controllable light elements, and a scanner driver that drives a scanner apparatus using a drive signal that is applied to drive both forward and reverse optical scanning of an image by the linear array.

Abstract translation: 公开的一个实施例涉及一种用于显示系统中的双向逐行扫描的方法。 该方法包括接收要显示的图像的图像数据，使用可控光元件的线性阵列向第一方向前进扫描图像数据，并使用线性阵列以与第一方向相反的第二方向反转扫描图像数据 。 所公开的另一实施例涉及一种用于双向逐行扫描的装置。 该装置包括可控光元件的线性阵列，以及扫描器驱动器，其使用驱动信号驱动扫描仪装置，该驱动信号被施加以通过线性阵列驱动图像的正向和反向光学扫描。

公开(公告)号：US06936869B2

公开(公告)日：2005-08-30

申请号：US10191664

申请日：2002-07-09

Applicant: Douglas A. Webb ,  Michael G. Ward

Inventor： Douglas A. Webb ,  Michael G. Ward

IPC: H01L21/336 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/778 ,  H01L31/0328

CPC classification number: H01L29/7786 ,  H01L21/823807 ,  H01L27/0922

Abstract: Semiconductor devices, e.g., heterojunction field effect transistors, fabricated with silicon-germnanium buffer layer and silicon-carbon channel layer structures. The invention provides a method of reducing threading defect density via reducing germanium content in a SiGe relaxed buffer layer on which a strained silicon channel layer is formed, by forming the strained silicon channel layer of a silicon-carbon alloy, e.g., containing less than about 1.5 atomic % C substitutionally incorporated in the Si lattice of the alloy.

Abstract translation: 用硅 - 锗缓冲层和硅 - 碳通道层结构制造的半导体器件，例如异质结场效应晶体管。 本发明提供了一种通过形成硅 - 碳合金的应变硅沟道层（例如，含有少于约3％）的硅 - 碳合金的应变硅沟道层，通过降低形成了应变硅沟道层的SiGe弛豫缓冲层中的锗含量来降低穿透缺陷密度的方法 1.5原子％C替代地掺入合金的Si晶格中。

公开(公告)号：US06271121B1

公开(公告)日：2001-08-07

申请号：US09345051

申请日：1999-06-30

Applicant: Douglas A. Webb

Inventor： Douglas A. Webb

IPC: H01L214763

CPC classification number: H01L21/28556 ,  C23C8/02 ,  C23C16/0245 ,  C23C16/14 ,  C23C16/34 ,  C23C16/56 ,  C23C28/322 ,  C23C28/34 ,  H01L21/76862 ,  H01L21/76876

Abstract: A process for chemical vapor deposition of blanket tungsten thin films on titanium nitride proceeds by hydrogen reduction of tungsten hexafluoride at temperatures between 200° C. and 500° C. Tungsten film nucleation is preferably facilitated by a hydrogen plasma treatment of the titanium nitride surface of the substrate. The plasma treatment may be carried out in a separate etch chamber and transferred to a tungsten CVD chamber without intervening exposure to air, or, preferably, is carried out with a low energy etch performed with the substrate mounted on a susceptor in the chamber of the tungsten CVD reactor at which the tungsten film is to be applied.

Abstract translation: 通过在200℃和500℃之间的温度下，六氟化钨的氢还原来进行氮化钛上的覆盖钨薄膜的化学气相沉积的方法。优选通过氢等离子体处理氮化钛表面的氮化钛表面来促进钨膜成核 底物。 等离子体处理可以在单独的蚀刻室中进行，并且转移到钨CVD室中，而不间断地暴露于空气中，或者优选地，通过在安装在腔室中的基座上的基板执行的低能量蚀刻 在其上施加钨膜的钨CVD反应器。

公开(公告)号：US5739941A

公开(公告)日：1998-04-14

申请号：US504861

申请日：1995-07-20

Applicant: Richard L. Knipe ,  Douglas A. Webb

Inventor： Richard L. Knipe ,  Douglas A. Webb

IPC: G02B26/08 ,  G02B26/00

CPC classification number: G02B26/0841

Abstract: A non-linear torsion hinge (12, 22) for a micro-mechanical device (10, 20) having a hinged movable element (11, 21). Each hinge (22) is comprised of two hinge strips (22a) spaced apart in the same plane, such that the axis of rotation of at least one of the hinge strips (22a) is different from the axis of rotation of the movable element (21). As a result, the hinge strip (22a) must elongate as it twists, thereby providing a greater restoring torque.

Abstract translation: 一种用于具有铰链可移动元件（11,21）的微机械装置（10,20）的非线性扭转铰链（12,22）。 每个铰链（22）由在相同平面中间隔开的两个铰链条（22a）组成，使得至少一个铰链条（22a）的旋转轴线不同于可移动元件的旋转轴线 21）。 结果，铰链条（22a）在其扭曲时必须伸长，从而提供更大的恢复扭矩。

公开(公告)号：US5610438A

公开(公告)日：1997-03-11

申请号：US401048

申请日：1995-03-08

Applicant: Robert M. Wallace ,  Douglas A. Webb

Inventor： Robert M. Wallace ,  Douglas A. Webb

IPC: G02B26/08 ,  H01L23/18

CPC classification number: G02B26/0841

Abstract: The present invention relates to micro-mechanical devices including actuators, motors and sensors with improved operating characteristics. A micro-mechanical device (10) comprising a DMD-type spatial light modulator with a getter (100) located within the package (52). The getter (100) is preferably specific to water, larger organic molecules, various gases, or other high surface energy substances. The getter is a non-evaporable getter (NEG) to permit the use of active metal getter systems without their evaporation on package surfaces.

Abstract translation: 本发明涉及包括具有改进的操作特性的致动器，马达和传感器的微机械装置。 一种微机械装置（10），包括具有位于所述封装（52）内的吸气剂（100）的DMD型空间光调制器。 吸气剂（100）优选对水，较大的有机分子，各种气体或其它高表面能物质是特异性的。 吸气剂是非蒸发性吸气剂（NEG），允许使用活性金属吸气剂系统，而不会在包装表面上蒸发。

公开(公告)号：US07405389B2

公开(公告)日：2008-07-29

申请号：US11280830

申请日：2005-11-15

Applicant: Michael J. Dueweke ,  Douglas A. Webb

Inventor： Michael J. Dueweke ,  Douglas A. Webb

IPC: G01M7/00 ,  G11B7/00 ,  G01D5/36

CPC classification number: G06F3/0317

Abstract: The present disclosure describes an optical displacement sensor having a dense multi-axis array of photosensitive elements. Generally, the sensor includes a two dimensional array of multiple photosensitive elements. In one embodiment, the array includes multiple linear arrays of photosensitive elements arranged along three or more axes in a space-filling, close-packed multi-axis array. The photosensitive elements are connected to each other in such a way that motion is determinable along each of the axes by measuring differential photocurrents between photosensitive elements along each of the axes. The inventive architecture advantageously increases signal redundancy, and reduces signal drop-out or low signals due to random fluctuations in the incident or absorbed light or in the signals from the photosensitive elements.

Abstract translation: 本公开描述了具有感光元件的致密多轴阵列的光学位移传感器。 通常，传感器包括多个感光元件的二维阵列。 在一个实施例中，阵列包括在空间填充，紧密堆积的多轴阵列中沿着三个或更多个轴布置的多个光敏元件的线性阵列。 感光元件以这样的方式彼此连接，即通过沿着每个轴测量感光元件之间的差分光电流，沿着每个轴可以确定运动。 本发明的架构有利地增加了信号冗余度，并且由于入射或吸收的光线或来自感光元件的信号中的随机波动而减小信号丢失或低信号。

公开(公告)号：US06967758B2

公开(公告)日：2005-11-22

申请号：US10769048

申请日：2004-01-30

Applicant: David T. Amm ,  Douglas A. Webb

Inventor： David T. Amm ,  Douglas A. Webb

IPC: B41J2/385 ,  B41J2/435 ,  B41J2/47 ,  B81B20060101 ,  G02B26/00 ,  G02B26/02 ,  G03G15/01 ,  G09G3/20 ,  G09G3/34 ,  G09G5/02 ,  H01J29/51 ,  H04N5/74 ,  H04N9/31

CPC classification number: H04N9/3185 ,  G09G3/2074 ,  G09G3/2085 ,  G09G3/3433 ,  G09G5/02 ,  G09G2320/0209 ,  H04N5/7458 ,  H04N9/3129

Abstract: In one embodiment, a delay circuit is configured to delay pixel information from an image source, such as a frame buffer. The delay circuit may be configured to delay the pixel information by an amount of time that would move a pixel projected on a surface by a distance less than a dimension of the pixel. A light modulator may modulate a light beam onto a surface, such as a display screen, based on the delayed pixel information. This advantageously allows for sub-pixel electronic alignment.

Abstract translation: 在一个实施例中，延迟电路被配置为延迟来自诸如帧缓冲器的图像源的像素信息。 延迟电路可以被配置为将像素信息延迟移动在表面上投影的像素小于像素的尺寸的距离的时间量。 光调制器可以基于延迟的像素信息将光束调制到诸如显示屏的表面上。 这有利地允许子像素电子对准。

公开(公告)号：US5504614A

公开(公告)日：1996-04-02

申请号：US381254

申请日：1995-01-31

Applicant: Douglas A. Webb ,  Bruce Gnade

Inventor： Douglas A. Webb ,  Bruce Gnade

IPC: G02B26/08

CPC classification number: G02B26/0841 ,  Y10S359/90

Abstract: A method of fabricating a digital micromirror device (DMD) (10) spatial light modulator (SLM) with a hardened superstructure hinge (16). The invention comprises strengthening a hinge layer material (36) by ion implantation before etching the hinge layer material (36) to form the hinge (16), but could be implanted after etching the hinge (16). The ion implantation is applied with a predetermined energy to concentrate the implanted material (62) at the center of the hinge layer material (36). The entire process is performed using conventional robust semiconductor processes, at low temperatures. Through ion implantation, the DMD hinge (16) is strengthened to minimize or eliminate the possibility of creep. A combination of ions could be implanted if desired. The ion chosen is based on the solubility of the hinge material.

Abstract translation: 一种制造具有硬化的上层结构铰链（16）的数字微镜装置（DMD）（10）空间光调制器（SLM）的方法。 本发明包括在蚀刻铰链层材料（36）之前通过离子注入来加强铰链层材料（36）以形成铰链（16），但是可以在蚀刻铰链（16）之后植入。 以预定能量施加离子注入，以将植入材料（62）集中在铰链层材料（36）的中心。 整个过程在低温下使用常规的稳健半导体工艺进行。 通过离子注入，DMD铰链（16）被加强以最小化或消除蠕变的可能性。 如果需要，可以植入离子的组合。 选择的离子基于铰链材料的溶解度。