摘要:
A memory device includes a clock receiver, a command interface, and a data interface separate from the command interface. A memory controller provides the command interface with a command that specifies a write operation. After a programmable latency period transpires from providing the command, data associated with the write operation is provided to the data interface by the memory controller. The memory controller provides power mode information that controls transitions between a plurality of power modes, where for each power mode of the plurality of power modes, less power is consumed than the amount of power consumed during the write operation. The power modes include a mode in which the clock receiver is on and the data interface is off; and a mode in which the clock receiver is off and the data interface is off.
摘要:
A memory device having a memory core is described. The memory device includes a clock receiver circuit, a first interface to receive a read command, a data interface, and a second interface to receive power mode information. The data interface is separate from the first interface. The second interface is separate from the first interface and the data interface. The memory device has a plurality of power modes, including a first mode in which the clock receiver circuit, first interface, and data interface are turned off; a second mode in which the clock receiver is turned on and the first interface and data interface are turned off; and a third mode in which the clock receiver and first interface are turned on. In the third mode, the data interface is turned on when the first interface receives the command, to output data in response to the command.
摘要:
A high-speed memory system is disclosed in which a single command effects control over either a single memory device or a plurality of memory devices depending on a present mode of operation. Such control may effect data transfer between the one or more memory devices and a memory controller, as well as operating state transitions or power mode transitions for the memory devices. Similarly, various configurations of relatively low bandwidth memory devices respond as a selectively controllable group to transmit or receive high bandwidth data.
摘要:
A memory device has interface circuitry and a memory core which make up the stages of a pipeline, each stage being a step in a universal sequence associated with the memory core. The memory device has a plurality of operation units such as precharge, sense, read and write, which handle the primitive operations of the memory core to which the operation units are coupled. The memory device further includes a plurality of transport units configured to obtain information from external connections specifying an operation for one of the operation units and to transfer data between the memory core and the external connections. The transport units operate concurrently with the operation units as added stages to the pipeline, thereby creating a memory device which operates at high throughput and with low service times under the memory reference stream of common applications.
摘要:
A memory device having a memory core is described. The memory device includes a clock receiver circuit, a first interface to receive a read command, a data interface, and a second interface to receive power mode information. The data interface is separate from the first interface. The second interface is separate from the first interface and the data interface. The memory device has a plurality of power modes, including a first mode in which the clock receiver circuit, first interface, and data interface are turned off; a second mode in which the clock receiver is turned on and the first interface and data interface are turned off; and a third mode in which the clock receiver and first interface are turned on. In the third mode, the data interface is turned on when the first interface receives the command, to output data in response to the command.
摘要:
A memory device having a memory core is described. The memory device includes a clock receiver circuit, a control interface, a data interface, a delay locked loop circuit, a read pipeline circuit and a circuit to provide an internal clock signal. The clock receiver circuit receives an external clock signal. The control interface receives a command that specifies a read operation to the memory device. The data interface transfers data between the memory device and an external set of signal lines. The delay locked loop circuit, coupled to the clock receiver circuit, to generate the internal clock signal using the external clock signal. The read pipeline circuit provides read data accessed from the memory core to the data interface. The circuit provides the internal clock signal to the read pipeline circuit in response to receipt of the command that specifies the read operation.
摘要:
A memory device with multiple clock domains. Separate clocks to different portions of the control circuitry create different clock domains. The different domains are sequentially turned on as needed to limit the power consumed. The turn on time of the domains is overlapped with the latency for the memory access to make the power control transparent to the user accessing the memory core. The memory device can dynamically switch between a fast and a slow clock depending upon the needed data bandwidth. The data bandwidth across the memory interface can be monitored by the memory controller, and when it drops below a certain threshold, a slower clock can be used. The clock speed can be dynamically increased as the bandwidth demand increases.
摘要:
Methods of operation of a memory device and system are provided in embodiments. Initialization operations are conducted at a first frequency of operation during an initialization sequence. Memory access operations are then performed at a second frequency of operation. The second frequency of operation is higher than the first frequency of operation. Also, the memory access operations include a read operation and a write operation. In an embodiment, information that represents the first frequency of operation and the second frequency of operation is read from a serial presence detect device.
摘要:
A memory device including an array of memory cells, and a register circuit to store a value representative of a period of time to elapse before the memory device is ready to receive a command when recovering from a power down mode is provided in an embodiment. The command specifies an access to the array of memory cells. A delay lock loop circuit synchronizes data transfers using an external clock signal. The delay lock loop circuit reacquires synchronization with the external clock signal during the period of time.
摘要:
A dynamic random access memory device includes banks of dynamic memory cells. The device performs a refresh operation in response to receiving a self refresh command, by refreshing rows of the memory cells located in each of the banks. Further, a refresh frequency for the refresh operation is selected such that the refresh frequency is minimized to conserve power consumed by the memory device while being sufficient to refresh the rows of the memory cells.