公开(公告)号：US20060138082A1

公开(公告)日：2006-06-29

申请号：US10539705

申请日：2003-12-19

Applicant: Eric Strang

Inventor： Eric Strang

IPC: G01L21/30 ,  C23F1/00

CPC classification number: H01J37/3244 ,  H01J37/32935

Abstract: A plasma processing device comprising a gas injection system is described, wherein the gas injection system comprises a gas injection assembly body, a consumable gas inject plate coupled to the gas injection assembly body, and a pressure sensor coupled to a gas injection plenum formed by the gas injection system body and the consumable gas inject plate. The gas injection system is configured to receive a process gas from at least one mass flow controller and distribute the process gas to the processing region within the plasma processing device, and the pressure sensor is configured to measure a gas injection pressure within the gas injection plenum. A controller, coupled to the pressure sensor, is configured to receive a signal from the pressure sensor and to determine a state of the consumable gas inject plate based upon the signal. A method of determining the state of the consumable gas inject plate comprises: measuring a change in the gas injection pressure associated with either a change in the process gas mass flow rate or the processing pressure; determining a response time for the change in pressure; and comparing the response time during erosion to a response time during no erosion.

公开(公告)号：US20060130966A1

公开(公告)日：2006-06-22

申请号：US11018922

申请日：2004-12-20

Applicant: Darko Babic ,  Eric Strang

Inventor： Darko Babic ,  Eric Strang

IPC: H01L21/306

CPC classification number: H01L21/02101 ,  G03F7/423 ,  H01L21/67057

Abstract: A method and system is described for treating a substrate with a supercritical fluid using a high temperature process. For example, when the supercritical fluid includes carbon dioxide in a supercritical state, the high temperature process is performed at a temperature approximately equal to and exceeding 80 degrees C., which is greater than the critical temperature of approximately 31 degrees C.

Abstract translation: 描述了使用高温处理用超临界流体处理衬底的方法和系统。 例如，当超临界流体包括处于超临界状态的二氧化碳时，高温处理在大约等于并超过80℃的温度下进行，该温度大于约31℃的临界温度。

公开(公告)号：US20060081564A1

公开(公告)日：2006-04-20

申请号：US10512862

申请日：2003-06-27

Applicant: Paul Moroz ,  Eric Strang

Inventor： Paul Moroz ,  Eric Strang

IPC: B23K9/00

CPC classification number: H01J37/32174 ,  H01J37/32706 ,  H01J37/32935 ,  H01J2237/0206

Abstract: An arc suppression system for plasma processing comprising at least one sensor coupled to the plasma processing system, and a controller coupled to the at least one sensor. The controller provides at least one algorithm for determining a state of plasma in contact with a substrate using at least one signal generated from the at least one sensor and controlling a plasma processing system in order to suppress an arcing event. When voltage differences between sensors exceed a target difference, the plasma processing system is determined to be susceptible to arcing. During this condidtion, an operator is notified, and decision can be made to either continue processing, modify processing, or discontinue processing.

Abstract translation: 一种用于等离子体处理的电弧抑制系统，其包括耦合到所述等离子体处理系统的至少一个传感器，以及耦合到所述至少一个传感器的控制器。 控制器提供至少一种算法，用于使用从至少一个传感器产生的至少一个信号来确定与衬底接触的等离子体的状态，并控制等离子体处理系统以抑制电弧事件。 当传感器之间的电压差超过目标差异时，等离子体处理系统被确定为容易产生电弧。 在这种情况下，通知操作者，并且可以做出决定以继续处理，修改处理或停止处理。

公开(公告)号：US20050071038A1

公开(公告)日：2005-03-31

申请号：US10673507

申请日：2003-09-30

Applicant: Eric Strang

Inventor： Eric Strang

IPC: G06F17/50 ,  H01L20060101 ,  G06F19/00

CPC classification number: G06F17/5018 ,  G06F2217/10

Abstract: A method, system and computer readable medium for controlling a process performed by a semiconductor processing tool includes inputting data relating to a process performed by the semiconductor processing tool, and inputting a first principles physical model relating to the semiconductor processing tool. First principles simulation is then performed using the input data and the physical model to provide a first principles simulation result, and the first principles simulation result is used to control the process performed by the semiconductor processing tool.

Abstract translation: 用于控制由半导体处理工具执行的处理的方法，系统和计算机可读介质包括输入与由半导体处理工具执行的处理相关的数据，以及输入与半导体处理工具相关的第一原理物理模型。 然后使用输入数据和物理模型执行第一原理模拟以提供第一原理模拟结果，并且第一原理模拟结果用于控制由半导体处理工具执行的处理。

公开(公告)号：US20070068625A1

公开(公告)日：2007-03-29

申请号：US11233025

申请日：2005-09-23

Applicant: Merritt Funk ,  David Horak ,  Eric Strang ,  Lee Chen

Inventor： Merritt Funk ,  David Horak ,  Eric Strang ,  Lee Chen

IPC: H01L21/306 ,  C23C16/00

CPC classification number: C23C16/4412 ,  C23C16/45565 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32834

Abstract: A plasma processing system includes a processing chamber, a substrate holder configured to hold a substrate for plasma processing, and a gas injection assembly. The gas injection assembly includes a first evacuation port located substantially in a center of the gas injection assembly and configured to evacuate gases from a central region of the substrate, and a gas injection system configured to inject gases in the process chamber. The plasma processing system also includes a second evacuation port configured to evacuate gases from a peripheral region surrounding the central region of the substrate.

Abstract translation: 等离子体处理系统包括处理室，被配置为保持用于等离子体处理的衬底的衬底保持器和气体注入组件。 气体注入组件包括基本上位于气体注入组件的中心并且构造成从衬底的中心区域排出气体的第一排气口，以及构造成在处理室中注入气体的气体注入系统。 等离子体处理系统还包括构造成从围绕衬底的中心区域的周边区域排出气体的第二排气口。

公开(公告)号：US20070020776A1

公开(公告)日：2007-01-25

申请号：US11517389

申请日：2006-09-08

Applicant: Eric Strang ,  Richard Parsons

Inventor： Eric Strang ,  Richard Parsons

IPC: H01L21/00

CPC classification number: H01L21/67253 ,  G01B15/02 ,  H01J37/32192 ,  H01J37/32275 ,  H01J37/3299 ,  H01L21/67069

Abstract: A wall film monitoring system includes first and second microwave mirrors in a plasma processing chamber each having a concave surface. The concave surface of the second mirror is oriented opposite the concave surface of the first mirror. A power source is coupled to the first mirror and configured to produce a microwave signal. A detector is coupled to at least one of the first mirror and the second mirror and configured to measure a vacuum resonance voltage of the microwave signal. A control system is connected to the detector that compares a first measured voltage and a second measured voltage and determines whether the second voltage exceeds a threshold value. A method of monitoring wall film in a plasma chamber includes loading a wafer in the chamber, setting a frequency of a microwave signal output to a resonance frequency, and measuring a first vacuum resonance voltage of the microwave signal. The method includes processing the wafer, measuring a second vacuum resonance voltage of the microwave signal, and determining whether the second measured voltage exceeds a threshold value using the first measured voltage as a reference value.

Abstract translation: 墙膜监测系统包括等离子体处理室中的具有凹面的第一和第二微波反射镜。 第二反射镜的凹面与第一反射镜的凹面相对。 电源耦合到第一反射镜并且被配置为产生微波信号。 检测器耦合到第一反射镜和第二反射镜中的至少一个并且被配置为测量微波信号的真空谐振电压。 控制系统连接到检测器，该检测器比较第一测量电压和第二测量电压，并确定第二电压是否超过阈值。 一种监测等离子体室中的壁膜的方法包括将晶片装载在室中，将微波信号输出的频率设定为谐振频率，以及测量微波信号的第一真空谐振电压。 该方法包括处理晶片，测量微波信号的第二真空谐振电压，以及使用第一测量电压作为参考值来确定第二测量电压是否超过阈值。

公开(公告)号：US20050235917A1

公开(公告)日：2005-10-27

申请号：US10514717

申请日：2003-05-29

Applicant: Jim Fordemwalt ,  Eric Strang ,  Steven Fink

Inventor： Jim Fordemwalt ,  Eric Strang ,  Steven Fink

IPC: H01L21/3065 ,  C23C16/00 ,  C23C16/44 ,  C23C16/52 ,  H01L21/00 ,  H01L21/205

CPC classification number: H01L21/67253 ,  C23C16/4407 ,  C23C16/52

Abstract: An apparatus for monitoring film deposition on a chamber wall in a process chamber. The apparatus includes a surface acoustic wave device provided on the chamber wall. The surface acoustic wave device is actuated to achieve a resonance frequency, and the resonance frequency produced is detected to determine whether a critical thickness of film on the wall of the chamber has been achieved, where an amount of decrease in the resonance frequency is proportional to a thickness of film on the chamber wall. The process chamber is cleaned when the resonance frequency detected falls within a first predetermined range.

Abstract translation: 一种用于监测处理室中的室壁上的膜沉积的装置。 该装置包括设置在室壁上的表面声波装置。 激励表面声波装置以实现谐振频率，并且检测所产生的谐振频率，以确定是否已经实现了室壁上的膜的临界厚度，其中谐振频率的减小量与 室壁上的膜厚度。 当检测到的共振频率落在第一预定范围内时，清洁处理室。

公开(公告)号：US20050221021A1

公开(公告)日：2005-10-06

申请号：US10813115

申请日：2004-03-31

Applicant: Eric Strang

Inventor： Eric Strang

IPC: C23C16/509 ,  H01J37/32 ,  H05H1/24

CPC classification number: C23C16/45542 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32449 ,  H01J37/32935

Abstract: A plasma processing system for performing atomic layer deposition (ALD) including a process chamber, a substrate holder provided within the process chamber, and a gas injection system configured to supply a first gas and a second gas to the process chamber. The system includes a controller that controls the gas injection system to continuously flow a first gas flow to the process chamber and to pulse a second gas flow to the process chamber at a first time. The controller pulses a RF power to the substrate holder at a second time. A method of operating a plasma processing system is provided that includes adjusting a background pressure in a process chamber, where the background pressure is established by flowing a first gas flow using a gas injection system, and igniting a processing plasma in the process chamber. The method includes pulsing a second gas flow using the gas injection system at a first time, and pulsing a RF power to a substrate holder at a second time.

Abstract translation: 一种用于执行原子层沉积（ALD）的等离子体处理系统，包括处理室，设置在处理室内的衬底保持器，以及被配置为向处理室提供第一气体和第二气体的气体注入系统。 该系统包括控制器，其控制气体注入系统以将第一气流连续地流动到处理室，并且在第一时间将第二气流脉冲到处理室。 控制器在第二时间将RF功率脉冲到衬底保持器。 提供了一种操作等离子体处理系统的方法，其包括调整处理室中的背景压力，其中通过使用气体注入系统流动第一气流并且点燃处理室中的处理等离子体来建立背景压力。 该方法包括在第一时间使用气体注入系统脉动第二气流，并且在第二时间将RF功率脉冲到衬底保持器。

公开(公告)号：US20050099133A1

公开(公告)日：2005-05-12

申请号：US10472553

申请日：2002-03-25

Applicant: Bill Quon ,  Jovan Jevtic ,  Sam Antley ,  Eric Strang

Inventor： Bill Quon ,  Jovan Jevtic ,  Sam Antley ,  Eric Strang

IPC: H05H1/46 ,  B01D53/70 ,  B01J19/08 ,  H01J7/24 ,  H01J37/32

CPC classification number: H01J37/321 ,  H01J37/32357 ,  H01J37/3266

Abstract: A high-density plasma source (100) is disclosed. The source includes an annular insulating body (300) with an annular cavity (316) formed within. An inductor coil (340) serving as an antenna is arranged within the annular cavity and is operable to generate a first magnetic field within a plasma duct (60) interior region (72) and inductively couple to the plasma when the annular body is arranged to surround a portion of the plasma duct. A grounded conductive housing (400) surrounds the annular insulating body. An electrostatic shield (360) is arranged adjacent the inner surface of the insulating body and is grounded to the conductive housing. Upper and lower magnet rings (422 and 424) are preferably arranged adjacent the upper and lower surfaces of the annular insulating body outside of the conductive housing. A T-match network is in electrical communication with said inductor coil and is adapted to provide for efficient transfer of RF power from an RF power source to the plasma. At least one plasma source can be used to form a high-density plasma suitable for plasma processing of a workpiece residing in a plasma chamber in communication with the at least one source.

Abstract translation: 公开了一种高密度等离子体源（100）。 源包括环形绝缘体（300），其内部形成有环形空腔（316）。 用作天线的电感线圈（340）布置在环形空腔内，并且可操作以在等离子体管道（60）内部区域（72）内产生第一磁场，并且当环形体布置成 围绕等离子体管道的一部分。 接地导电壳体（400）围绕环形绝缘体。 静电屏蔽（360）被布置成邻近绝缘体的内表面并且被接地到导电壳体。 上，下磁环（422和424）优选地布置成邻近导电外壳外的环形绝缘体的上表面和下表面。 T匹配网络与所述电感器线圈电连通，并且适于提供从RF功率源到等离子体的RF功率的有效传输。 可以使用至少一个等离子体源来形成适于等离子体处理高密度等离子体处理的工件，该工件位于与至少一个源连通的等离子体室中。

公开(公告)号：US20050046427A1

公开(公告)日：2005-03-03

申请号：US10495774

申请日：2003-01-31

Applicant: Eric Strang

Inventor： Eric Strang

IPC: G01R27/04 ,  G03G15/00 ,  H01J37/32 ,  H01P7/06

CPC classification number: H01J37/32935 ,  H01J37/32192 ,  H01J37/32275 ,  H01J37/3299

Abstract: An equipment status monitoring system (10) and method of operating includes first (40) and second (50) microwave mirrors in a plasma processing chamber (20) each forming a multi-modal resonator. A power source (60) is coupled to the first mirror (40) and configured to produce an excitation signal. A detector (70) is coupled to at least one of the first mirror (40) and the second mirror (50) and configured to measure an excitation signal. At least one of the power source (60) and the detector (70) is coupled to a divergent aperture (44).

Abstract translation: 设备状态监测系统（10）和操作方法包括等离子体处理室（20）中的每个形成多模共振器的第一（40）和第二（50）微波反射镜。 电源（60）耦合到第一反射镜（40）并且被配置为产生激励信号。 检测器（70）耦合到第一反射镜（40）和第二反射镜（50）中的至少一个并被配置成测量激励信号。 电源（60）和检测器（70）中的至少一个耦合到发散孔（44）。