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    MAGNETORESISTIVE STACK/STRUCTURE AND METHODS THEREFOR
    11.
    发明申请
    MAGNETORESISTIVE STACK/STRUCTURE AND METHODS THEREFOR 审中-公开

    公开(公告)号：US20200235288A1

    公开(公告)日：2020-07-23

    申请号：US16744963

    申请日：2020-01-16

    Applicant: Everspin Technologies, Inc.

    Inventor： Sumio IKEGAWA ,  Han Kyu LEE ,  Sanjeev AGGARWAL ,  Jijun SUN ,  Syed M. ALAM ,  Thomas ANDRE

    IPC: H01L43/04 ,  H01L27/22 ,  H01L43/06 ,  H01L43/10 ,  H01L43/14

    Abstract: The present disclosure is drawn to, among other things, a magnetoresistive device and a magnetoresistive memory comprising a plurality of such magnetoresistive devices. In some aspects, a magnetoresistive device may include a magnetically fixed region, a magnetically free region above or below the magnetically fixed region, and an intermediate region positioned between the magnetically fixed region and the magnetically free region, wherein the intermediate region includes a first dielectric material. The magnetoresistive device may also include encapsulation layers formed on opposing side walls of the magnetically free region, wherein the encapsulation layers include the first dielectric material.

    METHOD OF MANUFACTURING A MAGNETORESISTIVE DEVICE
    12.
    发明申请
    METHOD OF MANUFACTURING A MAGNETORESISTIVE DEVICE 审中-公开

    公开(公告)号：US20200176672A1

    公开(公告)日：2020-06-04

    申请号：US16695396

    申请日：2019-11-26

    Applicant: Everspin Technologies, Inc.

    Inventor： Sanjeev AGGARWAL ,  Sarin A. DESHPANDE

    IPC: H01L43/04 ,  H01L43/14 ,  H01L21/3065

    Abstract: A magnetoresistive device may include an intermediate region positioned between a magnetically fixed region and a magnetically free region, and spin Hall channel region extending around a sidewall of at least the magnetically free region. An insulator region may extend around a portion of the sidewall such that the insulator region contacts a first portion of the sidewall and the spin Hall channel region contacts a second portion of the sidewall.

    METHOD OF MANUFACTURING INTEGRATED CIRCUIT USING ENCAPSULATION DURING AN ETCH PROCESS
    13.
    发明申请
    METHOD OF MANUFACTURING INTEGRATED CIRCUIT USING ENCAPSULATION DURING AN ETCH PROCESS 审中-公开

    公开(公告)号：US20200013950A1

    公开(公告)日：2020-01-09

    申请号：US16576039

    申请日：2019-09-19

    Applicant: Everspin Technologies, Inc.

    Inventor： Sanjeev AGGARWAL ,  Sarin A. DESHPANDE ,  Kerry Joseph NAGEL

    IPC: H01L43/12 ,  H01L27/22

    Abstract: A method of fabricating a magnetoresistive bit from a magnetoresistive stack includes etching through a first portion of the magnetoresistive stack using a first etch process to form one or more sidewalls. At least a portion of the sidewalls includes redeposited material after the etching. The method also includes modifying at least a portion of the redeposited material on the sidewalls, and etching through a second portion of the magnetoresistive stack after the modifying step. The magnetoresistive stack may include a first magnetic region, an intermediate region disposed over the first magnetic region, and a second magnetic region disposed over the intermediate region.

    APPARATUS AND METHODS FOR INTEGRATING MAGNETORESISTIVE DEVICES
    14.
    发明申请
    APPARATUS AND METHODS FOR INTEGRATING MAGNETORESISTIVE DEVICES 审中-公开

    公开(公告)号：US20190237665A1

    公开(公告)日：2019-08-01

    申请号：US16380589

    申请日：2019-04-10

    Applicant: Everspin Technologies, Inc.

    Inventor： Sarin A. DESHPANDE ,  Sanjeev AGGARWAL ,  Moazzem HOSSAIN

    IPC: H01L43/12 ,  H01L27/22 ,  H01L43/08 ,  H01L21/768 ,  G11C11/16 ,  H01L43/02

    Abstract: The present disclosure is drawn to, among other things, a method of fabricating an integrated circuit device having a magnetoresistive device. In some aspects, the method includes forming the magnetoresistive device on a first contact of a substrate, wherein the magnetoresistive device includes a fixed magnetic region and a free magnetic region separated by an intermediate region; depositing a first dielectric material over the magnetoresistive device; depositing a second dielectric material over the first dielectric material; polishing a surface of the second dielectric material; forming a first cavity through the polished surface of the second dielectric material to expose a surface of the magnetoresistive device; and depositing an electrically conductive material in the first cavity to form a via.

    MAGNETORESISTIVE DEVICES AND METHODS THEREFOR
    17.
    发明申请
    MAGNETORESISTIVE DEVICES AND METHODS THEREFOR 审中-公开

    公开(公告)号：US20180158498A1

    公开(公告)日：2018-06-07

    申请号：US15831736

    申请日：2017-12-05

    Applicant: EVERSPIN TECHNOLOGIES, INC.

    Inventor： Sanjeev AGGARWAL ,  Sarin A. Deshpande ,  Jon Slaughter

    IPC: G11C11/16 ,  H01L43/02 ,  H01L43/12 ,  H01L27/22

    Abstract: The present disclosure is directed to exemplary methods of manufacturing a magnetoresistive device. In one aspect, a method may include forming one or more regions of a magnetoresistive stack on a substrate, wherein the substrate includes at least one electronic device. The method also may include performing a sole annealing process on the substrate having the one or more magnetoresistive regions formed thereon, wherein the sole annealing process is performed at a first minimum temperature. Subsequent to performing the sole annealing process, the method may include patterning or etching at least a portion of the magnetoresistive stack. Moreover, subsequent to the step of patterning or etching the portion of the magnetoresistive stack, the method may include performing all additional processing on the substrate at a second temperature below the first minimum temperature.

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