公开(公告)号：US20240295822A1

公开(公告)日：2024-09-05

申请号：US18642711

申请日：2024-04-22

Applicant: FUJIFILM Corporation

Inventor： Tetsuya KAMIMURA ,  Tetsuya SHIMIZU ,  Satoru MURAYAMA

IPC: G03F7/32 ,  G03F7/00 ,  G03F7/027 ,  G03F7/039 ,  G03F7/40 ,  H01L21/02

CPC classification number: G03F7/32 ,  G03F7/027 ,  G03F7/0397 ,  G03F7/322 ,  G03F7/40 ,  G03F7/70925 ,  H01L21/0206

Abstract: A pattern forming method including forming a film using an actinic ray-sensitive or radiation-sensitive resin composition; exposing the formed film; and treating the exposed film using a treatment liquid for manufacturing a semiconductor. The treatment liquid for manufacturing a semiconductor includes a quaternary ammonium compound represented by the following Formula (N); at least one additive selected from the group consisting of an anionic surfactant, a nonionic surfactant, a cationic surfactant, and a chelating agent; and water. The treatment liquid for manufacturing a semiconductor includes one kind or two or more kinds of metal atoms selected from the group consisting of Na, K, Ca, Fe, Cu, Mg, Mn, Li, Al, Cr, Ni, and Zn. A total mass of the metal atoms is 1 mass ppt to 1 mass ppm with respect to the sum of a total mass of the additive and the total mass of the metal atoms.

公开(公告)号：US20170283587A1

公开(公告)日：2017-10-05

申请号：US15629909

申请日：2017-06-22

Applicant: FUJIFILM Corporation

Inventor： Daisuke HAMADA ,  Satoru MURAYAMA ,  Hideki TAKAKUWA ,  Makoto KUBOTA

IPC: C08K5/544 ,  H01L27/146 ,  G02B5/20 ,  C08K3/22 ,  C08J5/18

CPC classification number: C08K5/544 ,  C08F8/10 ,  C08F290/061 ,  C08F299/024 ,  C08J5/18 ,  C08J2335/02 ,  C08K3/04 ,  C08K3/22 ,  C08K2003/2237 ,  G02B5/208 ,  G03F7/027 ,  G03F7/038 ,  G03F7/0755 ,  G03F7/105 ,  H01L27/14618 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14625 ,  C08F220/20 ,  C08F220/24

Abstract: The present invention provides a curable composition which is suitably used for the production of a light-shielding film which has excellent light-shielding properties, exhibits low reflectivity, has excellent pattern linearity, and is not susceptible to chipping; an infrared cut filter with a light-shielding film; and a solid-state imaging device. The curable composition according to the present invention includes a curable compound which has at least one selected from the group consisting of a fluorine atom, a silicon atom, a linear alkyl group having 8 or more carbon atoms, and a branched alkyl group having 3 or more carbon atoms, and a curable functional group; a silane coupling agent; and a black pigment.

公开(公告)号：US20160116653A1

公开(公告)日：2016-04-28

申请号：US14982885

申请日：2015-12-29

Applicant: FUJIFILM Corporation

Inventor： Satoru MURAYAMA ,  Kazuto SHIMADA ,  Yuki NARA

IPC: G02B5/20 ,  G02B1/04

Abstract: Provided are an infrared-light-blocking composition capable of forming an infrared-light-blocking layer having excellent light-transmitting performance in the visible region and having excellent light-blocking performance in the infrared region; an infrared-light-blocking layer; an infrared cut-off filter; and a camera module. An infrared-light-blocking composition of the invention contains inorganic microparticles and a dispersing agent, and the infrared-light-blocking layer formed from the infrared-light-blocking composition has a transmittance at a wavelength of 1,000 nm of 60% or less, a transmittance at a wavelength of 1,100 nm of 50% or less, and a transmittance at a wavelength of 500 nm of 80% or more.

Abstract translation: 本发明提供能够形成在可见光区域具有优异的透光性能并且在红外区域具有优异的阻光性能的红外阻光层的红外阻光组合物; 红外阻光层; 红外截止滤光片; 和相机模块。 本发明的红外线阻光性组合物含有无机微粒和分散剂，由红外线阻光性组合物形成的红外线阻光层的波长为1000nm以下的透射率为60％以下， 在1100nm的波长下的透射率为50％以下，波长500nm的透射率为80％以上。

公开(公告)号：US20160056054A1

公开(公告)日：2016-02-25

申请号：US14927798

申请日：2015-10-30

Applicant: FUJIFILM Corporation

Inventor： Satomi TAKAHASHI ,  Tetsuya KAMIMURA ,  Akiko KOYAMA ,  Atsushi MIZUTANI ,  Yasuo SUGISHIMA ,  Satoru MURAYAMA

IPC: H01L21/3213 ,  H01L21/285 ,  C23F1/44 ,  C23F1/30 ,  C23F1/26 ,  H01L21/324 ,  H01L21/02

CPC classification number: H01L21/32134 ,  C23F1/26 ,  C23F1/28 ,  C23F1/30 ,  C23F1/44 ,  H01L21/02068 ,  H01L21/28088 ,  H01L21/28518 ,  H01L21/324 ,  H01L21/823842 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/66575

Abstract: There is provided an etching method of a semiconductor substrate that includes a first layer containing germanium (Ge) and a second layer containing at least one metal element selected from nickel platinum (NiPt), titanium (Ti), nickel (Ni), and cobalt (Co), the method including: bringing an etching liquid which contains a specific acid compound into contact with the second layer and selectively removing the second layer.

Abstract translation: 提供一种半导体衬底的蚀刻方法，其包括含有锗（Ge）的第一层和包含至少一种选自镍铂（NiPt），钛（Ti），镍（Ni）和钴的金属元素的第二层） （Co），该方法包括：使包含特定酸化合物的蚀刻液与第二层接触并选择性地除去第二层。