公开(公告)号：US20230193168A1

公开(公告)日：2023-06-22

申请号：US18081738

申请日：2022-12-15

Applicant: Fujifilm Electronic Materials U.S.A., Inc.

Inventor： Bin Hu ,  Binh Duong ,  Carl Ballesteros ,  Yannan Liang ,  Hyosang Lee

IPC: C11D11/00 ,  C11D7/32 ,  C11D7/50

CPC classification number: C11D11/0047 ,  C11D7/32 ,  C11D7/5004

Abstract: This disclosure relates to a method that includes applying a polishing composition to a surface of a substrate; bringing a pad into contact with the surface of the substrate and moving the pad in relation to the substrate to create a polished substrate; treating the polished substrate with a rinse solvent; flowing a vapor over a meniscus formed at an interface between air and the rinse solvent on the polished substrate. The vapor includes a first component containing a water miscible organic solvent, a second component containing a cleaning agent, and a third component containing an inert gas.

公开(公告)号：US20230052829A1

公开(公告)日：2023-02-16

申请号：US17875458

申请日：2022-07-28

Applicant: Fujifilm Electronic Materials U.S.A., Inc.

Inventor： Ting-Kai Huang ,  Bin Hu ,  Yannan Liang ,  Hong Piao

IPC: C09G1/04 ,  H01L21/321

Abstract: This disclosure relates to a composition that includes at least one first ruthenium removal rate enhancer; at least one copper removal rate inhibitor; at least one low-k removal rate inhibitor; and an aqueous solvent.

公开(公告)号：US20220306899A1

公开(公告)日：2022-09-29

申请号：US17699655

申请日：2022-03-21

Applicant: Fujifilm Electronic Materials U.S.A., Inc.

Inventor： Qingmin Cheng ,  Bin Hu ,  Kristopher D. Kelly ,  Yannan Liang ,  Hyosang Lee ,  Eric Turner ,  Abhudaya Mishra

IPC: C09G1/02 ,  H01L21/321

Abstract: This disclosure relates to polishing compositions that include (1) at least one abrasive; (2) at least one organic acid or a salt thereof; (3) at least one amine compound; (4) at least one nitride removal rate reducing agent; and (5) an aqueous solvent.

公开(公告)号：US20220162478A1

公开(公告)日：2022-05-26

申请号：US17669519

申请日：2022-02-11

Applicant: FUJIFILM ELECTRONIC MATERIALS U.S.A., INC.

Inventor： David (Tawei) Lin ,  Bin Hu ,  Liqing (Richard) Wen ,  Yannan Liang ,  Ting-Kai Huang

IPC: C09G1/02 ,  H01L21/321 ,  H01L21/306 ,  C23F1/00 ,  C23F1/44

Abstract: The compositions of the present disclosure polish surfaces or substrates that at least partially include ruthenium. The composition includes a synergistic combination of ammonia and oxygenated halogen compound. The composition may further include abrasive and acid(s). A polishing composition for use on ruthenium materials may include ammonia, present in an amount of 0.01 wt % to 10 wt %, based on the total weight of the composition; hydrogen periodate, present in an amount of 0.01 wt % to 10 wt %, based on the total weight of the composition; silica, present in an amount of 0.01 wt % to 12 wt %, based on the total weight of the composition; and organic sulfonic add, present in an amount of 0.01 wt % to 10 wt %, based on the total weight of the composition, wherein the pH of the composition is between 6 and 8.

公开(公告)号：US20220135840A1

公开(公告)日：2022-05-05

申请号：US17509177

申请日：2021-10-25

Applicant: Fujifilm Electronic Materials U.S.A., Inc.

Inventor： Qingmin Cheng ,  Bin Hu ,  Yannan Liang ,  Hyosang Lee ,  Liqing Wen ,  Yibin Zhang ,  Abhudaya Mishra

IPC: C09G1/02 ,  C09K13/00 ,  H01L21/321

Abstract: This disclosure relates polishing compositions that include (1) at least one abrasive; (2) at least one organic acid or a salt thereof; (3) at least one first amine compound, the at least one first amine compound including an alkylamine having a 6-24 carbon alkyl chain; (4) at least one second amine compound containing at least two nitrogen atoms, the second amine compound being different from the first amine compound; and (5) an aqueous solvent.

公开(公告)号：US20240327761A1

公开(公告)日：2024-10-03

申请号：US18616337

申请日：2024-03-26

Applicant: Fujifilm Electronic Materials U.S.A. , Inc.

Inventor： Wei Li ,  Bin Hu ,  Nobuaki Sugimura

IPC: C11D7/36 ,  C11D7/26 ,  C11D7/32 ,  C11D7/34 ,  C11D7/50 ,  H01L21/02

CPC classification number: C11D7/36 ,  C11D7/263 ,  C11D7/265 ,  C11D7/3209 ,  C11D7/3245 ,  C11D7/34 ,  C11D7/50 ,  H01L21/02057

Abstract: The present disclosure relates to cleaning compositions that can be used to clean semiconductor substrates. These cleaning compositions can be used to remove defects arising from previous processing steps on these semiconductor substrates. These cleaning compositions can remove the defects/contaminants from the semiconductor substrates and thereby make the substrates appropriate for further processing. The cleaning compositions described herein primarily contain at least one organic acid and at least one organosilane compound.

公开(公告)号：US12024650B2

公开(公告)日：2024-07-02

申请号：US17509177

申请日：2021-10-25

Applicant: Fujifilm Electronic Materials U.S.A., Inc.

Inventor： Qingmin Cheng ,  Bin Hu ,  Yannan Liang ,  Hyosang Lee ,  Liqing Wen ,  Yibin Zhang ,  Abhudaya Mishra

IPC: C09G1/02 ,  C09K13/00 ,  H01L21/321

CPC classification number: C09G1/02 ,  C09K13/00 ,  H01L21/3212

Abstract: This disclosure relates polishing compositions that include (1) at least one abrasive; (2) at least one organic acid or a salt thereof; (3) at least one first amine compound, the at least one first amine compound including an alkylamine having a 6-24 carbon alkyl chain; (4) at least one second amine compound containing at least two nitrogen atoms, the second amine compound being different from the first amine compound; and (5) an aqueous solvent.

公开(公告)号：US11999876B2

公开(公告)日：2024-06-04

申请号：US17669519

申请日：2022-02-11

Applicant: FUJIFILM ELECTRONIC MATERIALS U.S.A., INC.

Inventor： David (Tawei) Lin ,  Bin Hu ,  Liqing (Richard) Wen ,  Yannan Liang ,  Ting-Kai Huang

IPC: C09G1/02 ,  C23F1/00 ,  C23F1/44 ,  H01L21/306 ,  H01L21/321

CPC classification number: C09G1/02 ,  C23F1/00 ,  C23F1/44 ,  H01L21/30625 ,  H01L21/3212

Abstract: The compositions of the present disclosure polish surfaces or substrates that at least partially include ruthenium. The composition includes a synergistic combination of ammonia and oxygenated halogen compound. The composition may further include abrasive and acid(s). A polishing composition for use on ruthenium materials may include ammonia, present in an amount of 0.01 wt % to 10 wt %, based on the total weight of the composition; hydrogen periodate, present in an amount of 0.01 wt % to 10 wt %, based on the total weight of the composition; silica, present in an amount of 0.01 wt % to 12 wt %, based on the total weight of the composition; and organic sulfonic acid, present in an amount of 0.01 wt % to 10 wt %, based on the total weight of the composition, wherein the pH of the composition is between 6 and 8.

公开(公告)号：US20240141205A1

公开(公告)日：2024-05-02

申请号：US18408986

申请日：2024-01-10

Applicant: Fujifilm Electronic Materials U.S.A, Inc

Inventor： Ting-Kai Huang ,  Bin Hu ,  Yannan Liang ,  Hong Piao

IPC: C09G1/04 ,  H01L21/321

CPC classification number: C09G1/04 ,  H01L21/3212

Abstract: This disclosure relates to a composition that includes at least one first ruthenium removal rate enhancer; at least one copper removal rate inhibitor; at least one low-k removal rate inhibitor; and an aqueous solvent.

公开(公告)号：US11732157B2

公开(公告)日：2023-08-22

申请号：US17063965

申请日：2020-10-06

Applicant: Fujifilm Electronic Materials U.S.A., Inc.

Inventor： Yannan Liang ,  Bin Hu ,  Liqing Wen ,  Shu-Wei Chang

IPC: C09G1/02 ,  H01L21/321 ,  B24B1/00 ,  C09K3/14 ,  C09G1/00 ,  C09K13/06 ,  C09G1/04 ,  C09G1/06 ,  B24B37/04 ,  H01L21/306

CPC classification number: C09G1/02 ,  B24B1/00 ,  B24B37/044 ,  C09G1/00 ,  C09G1/04 ,  C09G1/06 ,  C09K3/1454 ,  C09K3/1463 ,  C09K13/06 ,  H01L21/30625 ,  H01L21/3212

Abstract: A polishing composition includes an abrasive; an optional pH adjuster; a barrier film removal rate enhancer; a TEOS removal rate inhibitor; a cobalt removal rate enhancer; an azole-containing corrosion inhibitor; and a cobalt corrosion inhibitor.