公开(公告)号：US20230265313A1

公开(公告)日：2023-08-24

申请号：US18141530

申请日：2023-05-01

Applicant: Fujifilm Electronic Materials U.S.A., Inc.

Inventor： Eric Turner ,  Abhudaya Mishra ,  Carl Ballesteros

IPC: C09G1/02 ,  B24B37/04 ,  H01L21/3105 ,  C09K3/14 ,  H01L21/306 ,  C09G1/04 ,  C09K13/06 ,  H01L21/321 ,  C09G1/06 ,  C09G1/00 ,  B24B1/00

CPC classification number: C09G1/02 ,  B24B37/044 ,  H01L21/31053 ,  C09K3/1454 ,  H01L21/30625 ,  C09G1/04 ,  C09K3/1463 ,  C09K13/06 ,  H01L21/3212 ,  C09G1/06 ,  C09G1/00 ,  B24B1/00

Abstract: This disclosure relates to a polishing composition that includes at least one abrasive; at least one nitride removal rate reducing agent, an acid or a base; and water. The at least one nitride removal rate reduce agent can include a hydrophobic portion containing a C4 to C40 hydrocarbon group; and a hydrophilic portion containing at least one group selected from the group consisting of a sulfinite group, a sulfate group, a sulfonate group, a carboxylate group, a phosphate group, and a phosphonate group; in which the hydrophobic portion and the hydrophilic portion are separated by zero to ten alkylene oxide groups. The polishing composition can have a pH of from about 2 to about 6.5.

公开(公告)号：US12074020B2

公开(公告)日：2024-08-27

申请号：US17960895

申请日：2022-10-06

Applicant: Fujifilm Electronic Materials U.S.A., Inc.

Inventor： Mick Bjelopavlic ,  Carl Ballesteros

IPC: H01L21/02 ,  H01L21/306

CPC classification number: H01L21/02019 ,  H01L21/30604

Abstract: The present disclosure is directed to etching compositions that are useful for, e.g., selectively removing silicon germanium (SiGe) from a semiconductor substrate as an intermediate step in a multistep semiconductor manufacturing process.

公开(公告)号：US11820929B2

公开(公告)日：2023-11-21

申请号：US17466531

申请日：2021-09-03

Applicant: Fujifilm Electronic Materials U.S.A., Inc.

Inventor： Mick Bjelopavlic ,  Carl Ballesteros

IPC: C09K13/08 ,  C09K13/06 ,  B01J27/16 ,  B01J27/02 ,  H01L21/02

CPC classification number: C09K13/08 ,  B01J27/02 ,  B01J27/16 ,  C09K13/06 ,  H01L21/02019

Abstract: The present disclosure is directed to etching compositions that are useful for, e.g., selectively removing silicon germanium (SiGe) from a semiconductor substrate as an intermediate step in a multistep semiconductor manufacturing process.

公开(公告)号：US20230193168A1

公开(公告)日：2023-06-22

申请号：US18081738

申请日：2022-12-15

Applicant: Fujifilm Electronic Materials U.S.A., Inc.

Inventor： Bin Hu ,  Binh Duong ,  Carl Ballesteros ,  Yannan Liang ,  Hyosang Lee

IPC: C11D11/00 ,  C11D7/32 ,  C11D7/50

CPC classification number: C11D11/0047 ,  C11D7/32 ,  C11D7/5004

Abstract: This disclosure relates to a method that includes applying a polishing composition to a surface of a substrate; bringing a pad into contact with the surface of the substrate and moving the pad in relation to the substrate to create a polished substrate; treating the polished substrate with a rinse solvent; flowing a vapor over a meniscus formed at an interface between air and the rinse solvent on the polished substrate. The vapor includes a first component containing a water miscible organic solvent, a second component containing a cleaning agent, and a third component containing an inert gas.

公开(公告)号：US20220375758A1

公开(公告)日：2022-11-24

申请号：US17880727

申请日：2022-08-04

Applicant: Fujifilm Electronic Materials U.S.A., Inc.

Inventor： Carl Ballesteros ,  Abhudaya Mishra ,  Eric Turner

IPC: H01L21/3105 ,  C09G1/02

Abstract: This disclosure relates to a polishing composition that includes at least one abrasive; at least one nitride removal rate reducing agent, an acid or a base; and water. The at least one nitride removal rate reduce agent can include a hydrophobic portion and a hydrophilic portion; in which the hydrophobic portion includes a C16 to C22 hydrocarbon group and the hydrophilic portion comprises at least one group selected from the group consisting of a phosphate group and a phosphonate group. The polishing composition has a pH of about 2 to about 6.5.

公开(公告)号：US11124704B2

公开(公告)日：2021-09-21

申请号：US17159551

申请日：2021-01-27

Applicant: Fujifilm Electronic Materials U.S.A., Inc.

Inventor： Mick Bjelopavlic ,  Carl Ballesteros

IPC: C09K13/10 ,  H01L21/306 ,  C09K13/08

Abstract: The present disclosure is directed to etching compositions that are useful for, e.g., selectively removing silicon germanium (SiGe) from a semiconductor substrate as an intermediate step in a multistep semiconductor manufacturing process.

公开(公告)号：US20200343098A1

公开(公告)日：2020-10-29

申请号：US16929265

申请日：2020-07-15

Applicant: Fujifilm Electronic Materials U.S.A., Inc.

Inventor： Carl Ballesteros ,  Abhudaya Mishra ,  Eric Turner

IPC: H01L21/3105 ,  C09G1/02

Abstract: This disclosure relates to a polishing composition that includes at least one abrasive; at least one nitride removal rate reducing agent, an acid and a base; and water. The at least one nitride removal rate reduce agent can include a hydrophobic portion and a hydrophilic portion; in which the hydrophobic portion includes a C16 to C22 hydrocarbon group and the hydrophilic portion comprises at least one group selected from the group consisting of a sulfinite group, a sulfate group, a sulfonate group, a carboxylate group, a phosphate group, and a phosphonate group. The polishing composition has a pH of about 2 to about 6.5.

公开(公告)号：US20230112795A1

公开(公告)日：2023-04-13

申请号：US17960895

申请日：2022-10-06

Applicant: Fujifilm Electronic Materials U.S.A., Inc.

Inventor： Mick Bjelopavlic ,  Carl Ballesteros

IPC: H01L21/02 ,  H01L21/306

Abstract: The present disclosure is directed to etching compositions that are useful for, e.g., selectively removing silicon germanium (SiGe) from a semiconductor substrate as an intermediate step in a multistep semiconductor manufacturing process.

公开(公告)号：US20220064487A1

公开(公告)日：2022-03-03

申请号：US17411394

申请日：2021-08-25

Applicant: Fujifilm Electronic Materials U.S.A., Inc.

Inventor： Zachary L. Schaefer ,  Eric Turner ,  Carl Ballesteros

IPC: C09G1/02 ,  C08K5/1545 ,  H01L21/304

Abstract: This disclosure relates to a polishing composition that includes at least one abrasive; at least one pH adjuster, and at least one biosurfactant, as well as a method of using the polishing composition to polish a substrate. The biosurfactant can be selected from the group consisting of glycolipids, lipopeptides, and mixtures thereof.

公开(公告)号：US20210371748A1

公开(公告)日：2021-12-02

申请号：US17398181

申请日：2021-08-10

Applicant: Fujifilm Electronic Materials U.S.A., Inc.

Inventor： Mick Bjelopavlic ,  Carl Ballesteros

IPC: C09K13/10 ,  H01L21/306 ,  C09K13/08

Abstract: The present disclosure is directed to etching compositions that are useful for, e.g., selectively removing silicon germanium (SiGe) from a semiconductor substrate as an intermediate step in a multistep semiconductor manufacturing process.