公开(公告)号：US20190062595A1

公开(公告)日：2019-02-28

申请号：US16074994

申请日：2017-02-08

Applicant: FUJIMI INCORPORATED

Inventor： Megumi TANIGUCHI ,  Kohsuke TSUCHIYA ,  Maki ASADA ,  Taiki ICHITSUBO ,  Hisanori TANSHO

IPC: C09G1/02 ,  B24B37/04 ,  H01L21/306 ,  H01L21/02

Abstract: The present invention relates to a polishing composition containing an abrasive, a water-soluble polymer, an anionic surfactant, a basic compound, and water, in which the anionic surfactant has an oxyalkylene unit, and an average addition mole number of the oxyalkylene unit of the anionic surfactant is more than 3 and 25 or less. According to the present invention, it is possible to provide a polishing composition which can reduce the haze of a polished object and is also excellent in a polishing removal rate.

公开(公告)号：US20190015947A1

公开(公告)日：2019-01-17

申请号：US16070359

申请日：2016-12-16

Applicant: FUJIMI INCORPORATED

Inventor： Kohsuke TSUCHIYA ,  Taiki ICHITSUBO ,  Hisanori TANSHO ,  Yusuke SUGA

IPC: B24B37/04 ,  H01L21/306 ,  C09G1/02

Abstract: To provide a polishing composition capable of realizing a polished surface having smoothness and few defects. A polishing composition contains a water-soluble polymer satisfying the following two conditions (A) and (B): Condition (A): in a first standard solution which contains silica having an average primary particle size of 35 nm, the water-soluble polymer, ammonia, and water and in which the concentration of the silica is 0.48% by mass, the concentration of the water-soluble polymer is 0.0125% by mass, and the pH is 10.0, the adsorption ratio which is a ratio of the amount of the water-soluble polymer adsorbed to the silica to the total amount of the water-soluble polymer contained in the first standard solution is 10% or more; and Condition (B): in a second standard solution which contains silica having an average primary particle size of 35 nm, the water-soluble polymer, ammonia, and water and in which the concentration of the silica is 0.48% by mass, the concentration of the water-soluble polymer is 0.0125% by mass, and the pH is 10.4, the adsorption ratio which is a ratio of the amount of the water-soluble polymer adsorbed to the silica to the total amount of the water-soluble polymer contained in the second standard solution is 65% or less.

公开(公告)号：US20170253767A1

公开(公告)日：2017-09-07

申请号：US15602679

申请日：2017-05-23

Applicant: FUJIMI INCORPORATED ,  TOAGOSEI CO., LTD.

Inventor： Kohsuke TSUCHIYA ,  Hisanori TANSHO ,  Taiki ICHITSUBO ,  Yoshio MORI

IPC: C09G1/02 ,  B24B37/00 ,  C09K3/14 ,  H01L21/02 ,  B24B37/04

Abstract: This invention provides a silicon wafer polishing composition used in the presence of an abrasive. The composition comprises a silicon wafer polishing accelerator, an amide group-containing polymer, and water. The amide group-containing polymer has a building unit A in its main chain. The building unit A comprises a main chain carbon atom constituting the main chain of the amide group-containing polymer and a secondary amide group or a tertiary amide group. The carbonyl carbon atom constituting the secondary amide group or tertiary amide group is directly coupled to the main chain carbon atom.

公开(公告)号：US20170081554A1

公开(公告)日：2017-03-23

申请号：US15309281

申请日：2015-06-17

Applicant: FUJIMI INCORPORATED

Inventor： Kohsuke TSUCHIYA ,  Hisanori TANSHO ,  Yusuke SUGA

IPC: C09G1/02 ,  H01L21/306 ,  B24B37/24 ,  H01L21/02

CPC classification number: C09G1/02 ,  B24B37/00 ,  B24B37/044 ,  B24B37/24 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/02021 ,  H01L21/02024 ,  H01L21/02052 ,  H01L21/30625

Abstract: Provided is a composition for polishing silicon wafers, having an excellent effect of reducing haze and having low agglomerating property. A composition for polishing silicon wafers provided here includes: an amido group-containing polymer A; and an organic compound B not containing an amido group. The amido group-containing polymer A has, on a main chain, a building block S derived from a monomer represented by General Formula (1). Molecular weight MA of the amido group-containing polymer A and molecular weight MB of the organic compound B have a relation satisfying 200≦MB

公开(公告)号：US20160001416A1

公开(公告)日：2016-01-07

申请号：US14769377

申请日：2014-02-14

Applicant: FUJIMI INCORPORATED

Inventor： Kohsuke TSUCHIYA ,  Hisanori TANSHO

IPC: B24B37/04 ,  H01L21/02 ,  H01L21/306 ,  C09G1/02 ,  C09K3/14

CPC classification number: B24B37/044 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/02024 ,  H01L21/30625 ,  C08L29/04 ,  C08K3/36 ,  C08L33/24 ,  C08L39/06 ,  C08K3/28

Abstract: This invention provides a polishing composition comprising an abrasive, a water-soluble polymer and water. The water-soluble polymer comprises a polymer A having an adsorption ratio of lower than 5% and a polymer B having an adsorption ratio of 5% or higher, but lower than 95% based on a prescribed adsorption ratio measurement. Herein, the polymer B is selected from polymers excluding hydroxyethyl celluloses.

Abstract translation: 本发明提供一种抛光组合物，其包括研磨剂，水溶性聚合物和水。 水溶性聚合物包含吸附比低于5％的聚合物A和基于规定的吸附比测定的吸附率为5％以上但低于95％的聚合物B. 这里，聚合物B选自不含羟乙基纤维素的聚合物。

公开(公告)号：US20250122407A1

公开(公告)日：2025-04-17

申请号：US18688101

申请日：2022-08-19

Applicant: FUJIMI INCORPORATED

Inventor： Yoshiyuki TANABE ,  Maki ASADA ,  Kohsuke TSUCHIYA

IPC: C09G1/02 ,  C09K3/14

Abstract: A polishing composition having excellent bump cancellation ability at a periphery of an HLM and being able to improve a polishing removal rate is provided. This polishing composition contains an abrasive, a basic compound, and water. The polishing composition contains a globular abrasive as the abrasive and further contains an alkali metal salt.

公开(公告)号：US20230174821A1

公开(公告)日：2023-06-08

申请号：US17910895

申请日：2021-03-04

Applicant: FUJIMI INCORPORATED

Inventor： Kohsuke TSUCHIYA ,  Taiki ICHITSUBO

IPC: C09G1/02

CPC classification number: C09G1/02

Abstract: Provided is a polishing composition that contains a cellulose derivative and can improve the polishing removability and enhance the wettability of a polished surface of a silicon wafer. The polishing composition contains an abrasive, a cellulose derivative, a basic compound, and water. Here, the polishing composition has a zeta potential of -24.0 mV or more.

公开(公告)号：US20230143074A1

公开(公告)日：2023-05-11

申请号：US17911087

申请日：2021-03-01

Applicant: FUJIMI INCORPORATED

Inventor： Kohsuke TSUCHIYA

IPC: C09G1/02

CPC classification number: C09G1/02

Abstract: Provided is a polishing composition that can achieve wettability enhancement and haze reduction of a polished surface of a silicon wafer. The polishing composition for a silicon wafer contains an abrasive, a cellulose derivative, a surfactant, a basic compound, and water. Here, the cellulose derivative has a weight average molecular weight of more than 120×104, and the surfactant has a molecular weight of less than 4000.

公开(公告)号：US20230073290A1

公开(公告)日：2023-03-09

申请号：US17870663

申请日：2022-07-21

Applicant: FUJIMI INCORPORATED

Inventor： Kohsuke TSUCHIYA ,  Hisanori TANSHO ,  Yusuke SUGA ,  Taiki ICHITSUBO ,  Takayuki TAKEMOTO ,  Naohiko SAITO ,  Michihiro KAAI

IPC: C09G1/02 ,  B24B37/04

Abstract: Provided is a polishing composition which contains a water-soluble polymer and is suitable for reducing LPDs. The polishing composition provided in this application includes an abrasive, a water-soluble polymer, and a basic compound. In the polishing composition, the content of a reaction product of a polymerization initiator and a polymerization inhibitor is 0.1 ppb or less of the polishing composition on a weight basis.

公开(公告)号：US20220186078A1

公开(公告)日：2022-06-16

申请号：US17442712

申请日：2020-03-25

Applicant: FUJIMI INCORPORATED

Inventor： Kohsuke TSUCHIYA ,  Maki ASADA ,  Taiki ICHITSUBO

IPC: C09G1/02 ,  C09K3/14

Abstract: Provided is a polishing composition having excellent capability of reducing haze on the surface of an object to be polished. The polishing composition provided by the present invention includes an abrasive, a basic compound, a water-soluble polymer, and water. The water-soluble polymer includes at least a water-soluble polymer P1 and a water-soluble polymer P2. Here, the water-soluble polymer P1 is an acetalized polyvinyl alcohol-based polymer, and the water-soluble polymer P2 is a water-soluble polymer other than the acetalized polyvinyl alcohol-based polymer.