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66 条记录 (耗时 0.027 秒)

    DC-to-DC converter comprising a reconfigurable capacitor unit
    11.
    发明授权
    DC-to-DC converter comprising a reconfigurable capacitor unit 有权
    DC-DC转换器包括可重构电容器单元

    公开(公告)号：US08395914B2

    公开(公告)日：2013-03-12

    申请号：US12597308

    申请日：2008-05-08

    申请人： Johan H. Klootwijk ,  Hendrik J. Bergveld ,  Freddy Roozeboom ,  Derk Reefman ,  Jaap Ruigrok

    发明人： Johan H. Klootwijk ,  Hendrik J. Bergveld ,  Freddy Roozeboom ,  Derk Reefman ,  Jaap Ruigrok

    IPC分类号： H02M3/07

    CPC分类号： H01L27/0805 ,  H02M3/07

    摘要： The present invention relates to a configurable trench multi-capacitor device comprising a trench in a semiconductor substrate. The trench has a lateral extension exceeding 10 micrometer and a trench filling includes a number of at least four electrically conductive capacitor-electrode layers. A switching unit is provided that comprises a plurality of switching elements electrically interconnected between different capacitor-electrode layers of the trench filling. A control unit is connected with the switching unit and configured to generate and provide to the switching unit respective control signals for forming a respective one of a plurality of multi-capacitor configurations using the capacitor-electrode layers of the trench filling.

    摘要翻译： 本发明涉及一种包括半导体衬底中的沟槽的可配置沟槽多电容器器件。 沟槽的横向延伸超过10微米，沟槽填充物包括多个至少四个导电电容器电极层。 提供一种开关单元，其包括在沟槽填充物的不同电容器 - 电极层之间电连接的多个开关元件。 控制单元与开关单元连接，并且被配置为使用沟槽填充的电容器电极层来生成并向开关单元提供各自的控制信号，以形成多个多电容器配置中的相应一个。

    Integrated capacitor arrangement for ultrahigh capacitance values
    13.
    发明授权
    Integrated capacitor arrangement for ultrahigh capacitance values 有权
    用于超高电容值的集成电容器布置

    公开(公告)号：US08085524B2

    公开(公告)日：2011-12-27

    申请号：US12092608

    申请日：2006-11-02

    申请人： Freddy Roozeboom ,  Johan H. Klootwijk ,  Antonius L. A. M. Kemmeren ,  Derk Reefman ,  Johannes F. C. M. Verhoeven

    发明人： Freddy Roozeboom ,  Johan H. Klootwijk ,  Antonius L. A. M. Kemmeren ,  Derk Reefman ,  Johannes F. C. M. Verhoeven

    IPC分类号： H01G4/228

    CPC分类号： H01L28/91 ,  H01L27/0805 ,  H01L27/1087 ,  H01L29/945

    摘要： An electronic device includes at least one trench capacitor that can also take the form of an inverse structure, a pillar capacitor. An alternating layer sequence of at least two dielectric layers and at least two electrically conductive layers is provided in the trench capacitor or on the pillar capacitor, such that the at least two electrically conductive layers are electrically isolated from each other and from the substrate by respective ones of the at least two dielectric layers. A set of internal contact pads is provided, and each internal contact pad is connected with a respective one of the electrically conductive layers or with the substrate. A range of switching opportunities is opened up that allows tuning the specific capacitance of the capacitor to a desired value.

    摘要翻译： 电子设备包括至少一个也可以采取反向结构形式的沟槽电容器，立柱电容器。 至少两个电介质层和至少两个导电层的交替层序列设置在沟槽电容器或柱状电容器上，使得至少两个导电层通过相应的电气彼此电隔离并且与衬底电隔离 至少两个电介质层中的一个。 提供了一组内部接触焊盘，并且每个内部接触焊盘与相应的一个导电层或与衬底连接。 开启了一系列切换机会，可将电容器的比电容调谐到所需的值。

    ROBUST HIGH ASPECT RATIO SEMICONDUCTOR DEVICE
    14.
    发明申请
    ROBUST HIGH ASPECT RATIO SEMICONDUCTOR DEVICE 有权
    稳定的高倍率半导体器件

    公开(公告)号：US20110180931A1

    公开(公告)日：2011-07-28

    申请号：US13121268

    申请日：2009-09-24

    申请人： Freddy Roozeboom ,  Martijn Goossens ,  Willen Frederik Adrianus Besling ,  Nynke Verhaegh

    发明人： Freddy Roozeboom ,  Martijn Goossens ,  Willen Frederik Adrianus Besling ,  Nynke Verhaegh

    IPC分类号： H01L23/48 ,  G03F1/00

    CPC分类号： H01L29/41 ,  B81B3/007 ,  B81B2201/06 ,  B81C1/00619 ,  B81C2201/0112 ,  B81C2201/0132 ,  H01L28/91

    摘要： The invention relates to an semi-conductor device comprising a first surface and neighboring first and second electric elements arranged on the first surface, in which each of the first and second elements extends from the first surface in a first direction, the first element having a cross section substantially perpendicular to the first direction and a sidewall surface extending at least partially in the first direction, wherein the sidewall surface comprises a first section and a second section adjoining the first section along a line extending substantially parallel to the first direction, wherein the first and second sections are placed at an angle with respect to each other for providing an inner corner wherein the sidewall surface at the inner corner is, at least partially, arranged at a constant distance R from a facing part of the second element for providing a mechanical reinforcement structure at the inner corner.

    摘要翻译： 本发明涉及一种半导体器件，其包括第一表面和布置在第一表面上的相邻的第一和第二电气元件，其中第一和第二元件中的每个元件在第一方向上从第一表面延伸，第一元件具有 基本上垂直于第一方向的横截面和至少部分地沿第一方向延伸的侧壁表面，其中侧壁表面包括沿着基本上平行于第一方向延伸的线邻接第一部分的第一部分和第二部分，其中， 第一和第二部分相对于彼此以一定角度放置以提供内角，其中内角处的侧壁表面至少部分地布置成距离第二元件的面对部分恒定的距离R，以提供 机械加强结构在内角。

    ELECTRIC DEVICE COMPRISING AN IMPROVED ELECTRODE
    15.
    发明申请
    ELECTRIC DEVICE COMPRISING AN IMPROVED ELECTRODE 有权
    包含改进电极的电气设备

    公开(公告)号：US20100230787A1

    公开(公告)日：2010-09-16

    申请号：US12299325

    申请日：2007-04-30

    申请人： Lionel Guiraud ,  Francois Lecornec ,  Johan H. Klootwijk ,  Freddy Roozeboom ,  David D. R. Chevrie

    发明人： Lionel Guiraud ,  Francois Lecornec ,  Johan H. Klootwijk ,  Freddy Roozeboom ,  David D. R. Chevrie

    IPC分类号： H01L27/08

    CPC分类号： H01L27/0805 ,  H01L27/10817 ,  H01L27/10829 ,  H01L27/10852 ,  H01L27/10861 ,  H01L28/40 ,  H01L28/82 ,  H01L28/90 ,  H01L29/6609 ,  H01L29/66181 ,  H01L29/861

    摘要： The invention relates to an electric device including an electric element, the electric element comprising a first electrode (104) having a first surface (106) and a pillar (108), the pillar extending from the first surface in a first direction (110), the pillar having a length measured from the first surface parallel to the first direction, the pillar having a cross section (116) perpendicular to the first direction and the pillar having a sidewall surface (120) enclosing the pillar and extending in the first direction, characterized in—that, the pillar comprises any one of a score (124) and protrusion (122) extending along at least part of the length of the pillar for giving the pillar (108) improved mechanical stability. The electrode allows electrical elements such as capacitors, energy storage devices or diodes to be made with improved properties in a cost effective way.

    摘要翻译： 本发明涉及一种包括电气元件的电气设备，电气元件包括具有第一表面（106）和柱（108）的第一电极（104），该柱从第一表面沿第一方向（110）延伸， ，所述柱具有从所述第一表面平行于所述第一方向测量的长度，所述柱具有垂直于所述第一方向的横截面（116），所述柱具有封闭所述柱并且沿所述第一方向延伸的侧壁表面（120） 其特征在于，所述支柱包括沿柱的长度的至少一部分延伸的刻痕（124）和突起（122）中的任何一个，以提供支柱（108）改善的机械稳定性。 电极允许以成本有效的方式制造诸如电容器，储能装置或二极管的电气元件，具有改进的性能。

    DC-TO-DC CONVERTER COMPRISING A RECONFIGURABLE CAPACITOR UNIT
    16.
    发明申请
    DC-TO-DC CONVERTER COMPRISING A RECONFIGURABLE CAPACITOR UNIT 有权
    包含可重构电容单元的DC-DC转换器

    公开(公告)号：US20100117612A1

    公开(公告)日：2010-05-13

    申请号：US12597308

    申请日：2008-05-08

    申请人： Johan H. Klootwijk ,  Hendrik J. Bergveld ,  Freddy Roozeboom ,  Derk Reefman ,  Jaap Ruigrok

    发明人： Johan H. Klootwijk ,  Hendrik J. Bergveld ,  Freddy Roozeboom ,  Derk Reefman ,  Jaap Ruigrok

    IPC分类号： H02M3/07

    CPC分类号： H01L27/0805 ,  H02M3/07

    摘要： The present invention relates to a configurable trench multi-capacitor device comprising a trench in a semiconductor substrate. The trench has a lateral extension exceeding 10 micrometer and a trench filling includes a number of at least four electrically conductive capacitor-electrode layers. A switching unit is provided that comprises a plurality of switching elements electrically interconnected between different capacitor-electrode layers of the trench filling. A control unit is connected with the switching unit and configured to generate and provide to the switching unit respective control signals for forming a respective one of a plurality of multi-capacitor configurations using the capacitor-electrode layers of the trench filling.

    摘要翻译： 本发明涉及一种包括半导体衬底中的沟槽的可配置沟槽多电容器器件。 沟槽的横向延伸超过10微米，沟槽填充物包括多个至少四个导电电容器电极层。 提供一种开关单元，其包括在沟槽填充物的不同电容器 - 电极层之间电连接的多个开关元件。 控制单元与开关单元连接，并且被配置为使用沟槽填充的电容器电极层，生成并向开关单元提供各自的控制信号，以形成多个多电容器配置中的相应一个。

    Producing a covered through substrate via using a temporary cap layer
    17.
    发明授权
    Producing a covered through substrate via using a temporary cap layer 有权
    通过使用临时盖层生产覆盖的基板

    公开(公告)号：US07704881B2

    公开(公告)日：2010-04-27

    申请号：US12092605

    申请日：2006-11-03

    申请人： Johan H. Klootwijk ,  Antonius L. A. M. Kemmeren ,  Ronald Dekker ,  Eric Cornelis Egbertus Van Grunsven ,  Freddy Roozeboom

    发明人： Johan H. Klootwijk ,  Antonius L. A. M. Kemmeren ,  Ronald Dekker ,  Eric Cornelis Egbertus Van Grunsven ,  Freddy Roozeboom

    IPC分类号： H01L21/44

    CPC分类号： H01L21/76898 ,  H01L21/764 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The present invention relates to a method for producing a substrate with at least one covered via that electrically and preferably also thermally connects a first substrate side with an opposite second substrate side. The processing involves forming a trench on a the first substrate side remains and covering the trench with a permanent layer on top of a temporary, sacrificial cap-layer, which is decomposed in a thermal process step. The method of the invention provides alternative ways to remove decomposition products of the sacrificial cap-layer material without remaining traces or contamination even in the presence of the permanent layer. This is, according to a first aspect of the invention, achieved by providing the substrate trench with an overcoat layer that has holes. The holes in the overcoat layer leave room for the removal of the decomposition products of the cap-layer material. According to the second aspect of the invention, opening the covered trench from the second substrate side and allowing the cap-layer material to be removed through that opening provides a solution. Both methods of the present invention are based on the common idea of using a temporary cap-layer even in a situation where the substrate opening is permanently covered before the removal of the temporary cap-layer.

    摘要翻译： 本发明涉及一种制造具有至少一个覆盖通孔的基板的方法，所述至少一个覆盖通孔电连接并优选地将第一基板侧与相对的第二基板侧热连接。 所述处理涉及在第一基板侧上形成沟槽，并在热处理步骤中分解的临时牺牲盖层的顶部上保留并覆盖具有永久层的沟槽。 本发明的方法提供了即使在存在永久层的情况下除去牺牲帽层材料的分解产物而不留下痕迹或污染物的替代方法。 根据本发明的第一方面，这是通过为基底沟槽提供具有孔的外涂层而实现的。 外涂层中的孔留下去除盖层材料的分解产物的空间。 根据本发明的第二方面，从第二基板侧打开被覆盖的沟槽并且允许通过该开口去除盖层材料提供了一种解决方案。 本发明的两种方法都是基于即使在去除临时盖层之前基材开口被永久地覆盖的情况下使用临时盖层的常见思想。

    METHOD OF FORMING A CONDUCTIVE TRENCH IN A SILICON WAFER AND SILICON WAFER COMPRISING SUCH TRENCH
    18.
    发明申请
    METHOD OF FORMING A CONDUCTIVE TRENCH IN A SILICON WAFER AND SILICON WAFER COMPRISING SUCH TRENCH 审中-公开
    在硅砂中形成导电铁的方法和包含这种铁素体的硅膜

    公开(公告)号：US20100013060A1

    公开(公告)日：2010-01-21

    申请号：US12507269

    申请日：2009-07-22

    申请人： Yann Pierre Roger Lamy ,  Freddy Roozeboom ,  Fredricus van den Heuvel

    发明人： Yann Pierre Roger Lamy ,  Freddy Roozeboom ,  Fredricus van den Heuvel

    IPC分类号： H01L23/48 ,  H01L21/768

    CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method of forming a conductive trench such as a through-silicon-via in a silicon wafer is disclosed. The method includes depositing a mask over a wafer surface; patterning the mask to expose a portion of the wafer; exposing the wafer to a first etching step in which a first portion of the trench is formed; exposing the wafer to an second etching step in which a tapered second portion of the trench is formed, where the first portion has a continuously non-increasing width from the wafer surface to the second portion; and filling the trench with a conductive material. A silicon wafer including such a conductive trench is also disclosed.

    摘要翻译： 公开了一种在硅晶片中形成例如硅通孔的导电沟槽的方法。 该方法包括在晶片表面上沉积掩模; 图案化掩模以暴露晶片的一部分; 将晶片暴露于其中形成沟槽的第一部分的第一蚀刻步骤; 将晶片曝光到第二蚀刻步骤，其中形成沟槽的锥形第二部分，其中第一部分具有从晶片表面到第二部分的连续不增加的宽度; 并用导电材料填充沟槽。 还公开了包括这种导电沟槽的硅晶片。

    Method of manufacturing a display device
    19.
    发明授权
    Method of manufacturing a display device 失效
    制造显示装置的方法

    公开(公告)号：US06790690B2

    公开(公告)日：2004-09-14

    申请号：US10052342

    申请日：2002-01-18

    申请人： Herbert Lifka ,  Freddy Roozeboom ,  Rene Johan Gerrit Elfrink ,  Mark Thomas Johnson

    发明人： Herbert Lifka ,  Freddy Roozeboom ,  Rene Johan Gerrit Elfrink ,  Mark Thomas Johnson

    IPC分类号： H01L2100

    CPC分类号： G02F1/1362 ,  H01L25/50 ,  H01L27/15 ,  H01L27/32 ,  H01L2924/0002 ,  H01L2924/00

    摘要： ICs (20) are nearly separated from the semiconductor substrate (10) on/in which they are formed. Subsequently, the substrate is positioned upside down on a substrate (carrier) (3) which is provided with glue (21) at the location of a crystal. After attachment of the crystal to the carrier, the semiconductor substrate is removed and the crystal remains attached to the carrier e.g. at the crossing of rows and columns. The separate crystals may contain TFTs (simple AM addressing) but also more complicated electronics (address of pixel in memory+identification).

    摘要翻译： IC（20）在形成它们之后几乎与半导体衬底（10）分离。 随后，将基板上下放置在在晶体位置处设置有胶水（21）的基板（载体）（3）上。 在将晶体附着到载体之后，去除半导体衬底，并且晶体保持附着到载体上。 在行和列的交叉处。 单独的晶体可能包含TFT（简单的AM寻址），也可能是更复杂的电子元件（存储器中的像素地址+识别）。