公开(公告)号：US07442973B2

公开(公告)日：2008-10-28

申请号：US10538943

申请日：2003-12-12

申请人： Tetsuya Komoguchi ,  Yoshiyuki Enomoto

发明人： Tetsuya Komoguchi ,  Yoshiyuki Enomoto

IPC分类号： H01L31/062

CPC分类号： H01L27/14629 ,  H01L27/14601 ,  H01L27/14623 ,  H01L27/14627 ,  H04N5/2254

摘要： By improving the embedding property of a light-transmissive material constituting a waveguide, light collection efficiency is improved, and reliability of a solid-state imaging device is ensured.In a solid-state imaging device including a light-receiving section (1) which performs photoelectric conversion in response to receipt of light and a waveguide (20) composed of a light-transmissive material formed in an insulating film 5 which covers a substrate provided with the light-receiving section (1), in which the waveguide (20) guides incident light from outside to the light-receiving section (1), the waveguide (20) is provided with a forward tapered portion in which the size of the planar shape viewed from the direction of incident light decreases from the light incident side surface toward the light-receiving section.

摘要翻译： 通过提高构成波导的透光性材料的嵌入特性，提高了光收集效率，确保了固态成像装置的可靠性。 在包括响应于光的接收进行光电转换的光接收部分（1）和形成在覆盖所提供的基板的绝缘膜5中形成的透光材料的波导（20）的固态成像装置中， 其中波导管20将来自外部的入射光引导到光接收部分1的光接收部分（1），波导（20）设置有前锥形部分，其中， 从入射光的方向观察的平面形状从光入射侧表面朝向光接收部分减小。

公开(公告)号：US07154181B2

公开(公告)日：2006-12-26

申请号：US10776375

申请日：2004-02-11

申请人： Yoshiyuki Enomoto

发明人： Yoshiyuki Enomoto

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/76808 ,  H01L21/31116 ,  H01L21/76838 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device and a method of manufacturing the device includes a first buried wiring, a second buried wiring formed as a layer different from the first buried wiring, a contact hole, which is formed between the first buried wiring and the second buried wiring and is filled with a wiring material for electrically connecting the first buried wiring and the second buried wiring therethrough, and a dummy hole, which has a hole diameter different from the contact hole, is so formed in vicinity of the contact hole as to connect the first buried wiring, and is filled with a wiring material therein.

摘要翻译： 半导体器件和该器件的制造方法包括：第一掩埋布线，形成为与第一掩埋布线不同的层的第二掩埋布线，形成在第一掩埋布线和第二掩埋布线之间的接触孔，并且是 填充有用于将第一掩埋布线和第二掩埋布线电连接的布线材料，并且具有与接触孔不同的孔直径的虚拟孔形成在接触孔附近，以将第一掩埋 布线，并在其中填充布线材料。

公开(公告)号：US06780793B2

公开(公告)日：2004-08-24

申请号：US09955810

申请日：2001-09-19

申请人： Yoshiyuki Tanaka ,  Yoshiyuki Enomoto ,  Masaki Saito

发明人： Yoshiyuki Tanaka ,  Yoshiyuki Enomoto ,  Masaki Saito

IPC分类号： H01L21469

CPC分类号： H01L21/02164 ,  H01L21/02131 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/31629 ,  H01L21/76801 ,  H01L21/76819 ,  H01L21/76837

摘要： An improved method for producing a semiconductor device with a fluorine-doped silicon oxide interlayer insulating film. In one embodiment, the fluorine-doped silicon oxide layer (FSG layer) is formed in a process chamber. Thereafter, a silicon oxide layer is formed in the same process chamber over the FSG layer at a higher temperature than the FSG layer formation temperature. In another embodiment, after the FSG layer is formed, a surface layer of the FSG layer is selectively sputtered away before the silicon oxide layer is formed.

摘要翻译： 一种用于制造具有氟掺杂氧化硅层间绝缘膜的半导体器件的改进方法。 在一个实施例中，在处理室中形成氟掺杂氧化硅层（FSG层）。 此后，在与FSG层形成温度相比更高的温度下，在FSG层上的相同处理室中形成氧化硅层。 在另一个实施例中，在形成FSG层之后，在形成氧化硅层之前，FSG层的表面层被选择性地溅射掉。

公开(公告)号：US20110292362A1

公开(公告)日：2011-12-01

申请号：US13134183

申请日：2011-05-31

申请人： Yoshiyuki Enomoto ,  Hirohide Minakawa

发明人： Yoshiyuki Enomoto ,  Hirohide Minakawa

IPC分类号： G03B27/68

CPC分类号： G03F9/7088

摘要： An exposure apparatus which forms a predetermined mask pattern on a target workpiece through exposure by: casting exposure light upon a mask in which the pattern and a mask-side alignment mark are formed, and forming an image of the mask on the target workpiece by projecting the exposure light, which passes the mask, on the target workpiece through a projection lens, includes: an alignment lighting unit configured to cast, as alignment light, light in a wavelength range included in the exposure light onto the mask-side alignment mark of the mask; and an alignment camera unit including an image pickup device for capturing images, and configured to receive the incident alignment light coming from the alignment lighting unit through the mask and the projection lens.

摘要翻译： 一种曝光装置，其通过以下方式通过曝光在目标工件上形成预定的掩模图案：将曝光光投射在其上形成图案和掩模侧对准标记的掩模上，并且通过投影来在目标工件上形成掩模的图像 通过投影透镜使目标工件通过掩模的曝光光包括：对准照明单元，被配置为将包括在曝光光中的波长范围内的光作为对准光投射到掩模侧对准标记上 面具; 以及对准摄像机单元，其包括用于拍摄图像的图像拾取装置，并且被配置为通过掩模和投影透镜接收来自对准照明单元的入射对准光。

公开(公告)号：US07842986B2

公开(公告)日：2010-11-30

申请号：US12127434

申请日：2008-05-27

申请人： Tetsuya Komoguchi ,  Yoshiyuki Enomoto

发明人： Tetsuya Komoguchi ,  Yoshiyuki Enomoto

IPC分类号： H01L31/062

CPC分类号： H01L27/14629 ,  H01L27/14601 ,  H01L27/14623 ,  H01L27/14627 ,  H04N5/2254

摘要： A solid-state imaging device having a plurality of light-receiving sections which are disposed in a substrate and which generate charge in response to incident light, a planarizing layer which covers predetermined elements disposed on the substrate to perform planarization, a plurality of signal lines disposed above the planarizing layer and a waveguide which guides incident light to each of the light-receiving sections, the waveguide passing through the space between the plurality of signal lines.

摘要翻译： 一种固态成像装置，具有多个受光部，所述多个光接收部设置在基板中并且响应于入射光而产生电荷;平坦化层，其覆盖设置在所述基板上的规定元件进行平坦化;多个信号线 布置在平坦化层上方的波导和将入射光引导到每个光接收部分的波导，波导穿过多个信号线之间的空间。

公开(公告)号：US20100207242A1

公开(公告)日：2010-08-19

申请号：US12654803

申请日：2010-01-05

申请人： Kyoko Izuha ,  Hiroaki Ammo ,  Yoshiyuki Enomoto

发明人： Kyoko Izuha ,  Hiroaki Ammo ,  Yoshiyuki Enomoto

IPC分类号： H01L29/92 ,  G06F17/50

CPC分类号： H01L23/5223 ,  H01L23/5222 ,  H01L27/0207 ,  H01L28/40 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed herein is a capacitive element formed by multilayer wirings, wherein a total capacitance, intralayer capacitance and interlayer capacitance are calculated for a plurality of device structures by changing parameters relating to the multilayer wirings in an integrated circuit, a device structure is identified, from among the plurality of device structures, whose difference in the total capacitance between the device structures is equal to or less than a predetermined level and at least either of whose ratio of the intralayer capacitance to the total capacitance or ratio of the interlayer capacitance to the total capacitance satisfies a predetermined condition, and the parameters of the device structure satisfying the predetermined condition are determined as the parameters of the multilayer wirings.

摘要翻译： 本文公开了一种由多层布线形成的电容元件，其中通过改变与集成电路中的多层布线相关的参数，为多个器件结构计算总电容，层间电容和层间电容，从 多个器件结构，其器件结构之间的总电容的差异等于或小于预定电平，并且其内部电容与总电容的比值或层间电容与总电容的比率中的至少一个 满足预定条件，并且将满足预定条件的装置结构的参数确定为多层布线的参数。

公开(公告)号：US20060115230A1

公开(公告)日：2006-06-01

申请号：US10538943

申请日：2003-12-12

申请人： Tetsuya Komoguchi ,  Yoshiyuki Enomoto

发明人： Tetsuya Komoguchi ,  Yoshiyuki Enomoto

IPC分类号： G02B6/10

CPC分类号： H01L27/14629 ,  H01L27/14601 ,  H01L27/14623 ,  H01L27/14627 ,  H04N5/2254

摘要： By improving the embedding property of a light-transmissive material constituting a waveguide, light collection efficiency is improved, and reliability of a solid-state imaging device is ensured. In a solid-state imaging device including a light-receiving section (1) which performs photoelectric conversion in response to receipt of light and a waveguide (20) composed of a light-transmissive material formed in an insulating film 5 which covers a substrate provided with the light-receiving section (1), in which the waveguide (20) guides incident light from outside to the light-receiving section (1), the waveguide (20) is provided with a forward tapered portion in which the size of the planar shape viewed from the direction of incident light decreases from the light incident side surface toward the light-receiving section.

摘要翻译： 通过提高构成波导的透光性材料的嵌入特性，提高了光收集效率，确保了固态成像装置的可靠性。 在包括响应于光的接收进行光电转换的光接收部分（1）和形成在覆盖所提供的基板的绝缘膜5中形成的透光材料的波导（20）的固态成像装置中， 其中波导管20将来自外部的入射光引导到光接收部分1的光接收部分（1），波导（20）设置有前锥形部分，其中， 从入射光的方向观察的平面形状从光入射侧表面朝向光接收部分减小。

公开(公告)号：US06989330B2

公开(公告)日：2006-01-24

申请号：US10756012

申请日：2004-01-13

申请人： Yoshiyuki Enomoto ,  Ryuichi Kanamura

发明人： Yoshiyuki Enomoto ,  Ryuichi Kanamura

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L23/53223 ,  H01L21/02131 ,  H01L21/3127 ,  H01L21/31629 ,  H01L21/32051 ,  H01L21/76801 ,  H01L21/76828 ,  H01L21/76856 ,  H01L21/76858 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： In order to form an aluminum system wiring that does not peel off on an insulating film containing fluorine and to improve the reliability thereof, a semiconductor device according to the present invention includes an insulating film (14) containing fluorine formed on a substrate (11), a titanium aluminum alloy film (17a) formed on the insulating film (14) containing fluorine, and a metallic film (17b) comprising aluminum or an aluminum alloy formed on the titanium aluminum alloy film (17a).

摘要翻译： 为了形成在含氟的绝缘膜上不会剥离的铝系布线并提高其可靠性，根据本发明的半导体器件包括在基板（11）上形成的含有氟的绝缘膜（14） ，形成在含氟的绝缘膜（14）上的钛铝合金膜（17a）和形成在钛铝合金膜（17a）上的铝或铝合金的金属膜（17b）。

公开(公告)号：US20050227467A1

公开(公告)日：2005-10-13

申请号：US11142560

申请日：2005-06-01

申请人： Yoshiyuki Enomoto ,  Ryuichi Kanamura

发明人： Yoshiyuki Enomoto ,  Ryuichi Kanamura

IPC分类号： H01L23/52 ,  H01L21/312 ,  H01L21/316 ,  H01L21/3205 ,  H01L21/4763 ,  H01L21/768 ,  H01L23/48 ,  H01L23/522 ,  H01L23/532

CPC分类号： H01L23/53223 ,  H01L21/02131 ,  H01L21/3127 ,  H01L21/31629 ,  H01L21/32051 ,  H01L21/76801 ,  H01L21/76828 ,  H01L21/76856 ,  H01L21/76858 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： In order to form an aluminum system wiring that does not peel off on an insulating film containing fluorine and to improve the reliability thereof, a semiconductor device according to the present invention includes an insulating film (14) containing fluorine formed on a substrate (11), a titanium aluminum alloy film (17a) formed on the insulating film (14) containing fluorine, and a metallic film (17b) comprising aluminum or an aluminum alloy formed on the titanium aluminum alloy film (17a).

摘要翻译： 为了形成在含氟的绝缘膜上不会剥离的铝系布线并提高其可靠性，根据本发明的半导体器件包括在基板（11）上形成的含有氟的绝缘膜（14） ，形成在含氟的绝缘膜（14）上的钛铝合金膜（17a）和形成在钛铝合金膜（17a）上的铝或铝合金的金属膜（17b）。

公开(公告)号：US08373786B2

公开(公告)日：2013-02-12

申请号：US12434340

申请日：2009-05-01

申请人： Yoichi Otsuka ,  Yoshiyuki Enomoto ,  Kazunori Nagahata ,  Tadayuki Kimura ,  Toshihiko Hayashi ,  Kenichi Aoyagi ,  Kiyotaka Tabuchi ,  Iwao Sugiura ,  Kensaku Maeda

发明人： Yoichi Otsuka ,  Yoshiyuki Enomoto ,  Kazunori Nagahata ,  Tadayuki Kimura ,  Toshihiko Hayashi ,  Kenichi Aoyagi ,  Kiyotaka Tabuchi ,  Iwao Sugiura ,  Kensaku Maeda

IPC分类号： H04N5/335 ,  H04N9/083 ,  H01L31/113 ,  H01L21/311

CPC分类号： H01L27/14625 ,  G02B5/201 ,  G02B5/223 ,  H01L27/14621 ,  H01L27/14685

摘要： A solid-state imaging device has: an imaging region in which a plurality of pixels each having a photoelectric conversion element are arranged, and a color filter. The color filter includes: filter components of a first color (2G), filter components of a second color (2R) formed by self-alignment and each being surrounded by the filter components of the first color (2G), and filter components of a third color (2B) formed by self-alignment and each being surrounded by the filter components of the first color (2G).

摘要翻译： 固态成像装置具有：配置有各自具有光电转换元件的多个像素的成像区域和滤色器。 滤色器包括：第一颜色（2G）的滤色镜部件，通过自对准形成的并且由第一颜色（2G）的滤光片部件包围的第二颜色（2R）的滤色镜部件，以及 第三颜色（2B）通过自对准形成，并且每个由第一颜色（2G）的滤光器部件包围。