公开(公告)号：US09121890B2

公开(公告)日：2015-09-01

申请号：US14067204

申请日：2013-10-30

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Sipeng Gu ,  Xiang Hu ,  Alok Vaid ,  Lokesh Subramany ,  Akshey Sehgal

IPC: H01L21/311 ,  H01L21/302 ,  G01R31/26 ,  H01L27/088 ,  H01L21/8234 ,  H01L21/8238 ,  H01L27/092

CPC classification number: H01L22/30 ,  G01R31/2621 ,  H01L21/823431 ,  H01L21/823821 ,  H01L27/0886 ,  H01L27/0924

Abstract: Approaches for providing a substrate having a planar metrology pad adjacent a set of fins of a fin field effect transistor (FinFET) device are disclosed. Specifically, the FinFET device comprises a finned substrate, and a planar metrology pad formed on the substrate adjacent the fins in a metrology measurement area of the FinFET device. Processing steps include forming a first hardmask over the substrate, forming a photoresist over a portion of the first hardmask in the metrology measurement area of the FinFET device, removing the first hardmask in an area adjacent the metrology measurement area remaining exposed following formation of the photoresist, patterning a set of openings in the substrate to form the set of fins in the FinFET device in the area adjacent the metrology measurement area, depositing an oxide layer over the FinFET device, and planarizing the FinFET device to form the planar metrology pad in the metrology measurement area.

Abstract translation: 公开了一种用于提供具有与翅片场效应晶体管（FinFET）器件的一组翅片相邻的平面度量垫的衬底的方法。 具体地说，FinFET器件包括鳍式衬底和在FinFET器件的度量测量区域中与衬底相邻的衬底上形成的平面度量垫。 处理步骤包括在衬底上形成第一硬掩模，在FinFET器件的测量测量区域中的第一硬掩模的一部分上形成光致抗蚀剂，在形成光致抗蚀剂之后，在与测量测量区域相邻的区域中残留的部分去除第一硬掩模 在衬底中图案化一组开口以在邻近测量测量区域的区域中的FinFET器件中形成一组鳍片，在FinFET器件上沉积氧化物层，以及平坦化FinFET器件，以形成平面度量板 计量测量领域。

公开(公告)号：US11300948B2

公开(公告)日：2022-04-12

申请号：US16454242

申请日：2019-06-27

Applicant: GLOBALFOUNDRIES INC. ,  NOVA LTD.

Inventor： Taher Kagalwala ,  Alok Vaid ,  Shay Yogev ,  Matthew Sendelbach ,  Paul Isbester ,  Yoav Etzioni

IPC: G05B19/418 ,  G05B13/02

Abstract: A process control method for manufacturing semiconductor devices, including determining a quality metric of a production semiconductor wafer by comparing production scatterometric spectra of a production structure of the production wafer with reference scatterometric spectra of a reference structure of reference semiconductor wafers, the production structure corresponding to the reference structure, the reference spectra linked by machine learning to a reference measurement value of the reference structure, determining a process control parameter value (PCPV) of a wafer processing step, the PCPV determined based on measurement of the production wafer and whose contribution to the PCPV is weighted with a first predefined weight based on the quality metric, and based on a measurement of a different wafer and whose contribution to the PCPV is weighted with a second predefined weight based on the quality metric, and controlling, with the PCPV, the processing step during fabrication.

公开(公告)号：US10664638B1

公开(公告)日：2020-05-26

申请号：US16221631

申请日：2018-12-17

Applicant: GLOBALFOUNDRIES INC. ,  NOVA MEASURING INSTRUMENTS LTD.

Inventor： Taher Kagalwala ,  Sridhar Mahendrakar ,  Matthew Sendelbach ,  Alok Vaid

IPC: G06F30/3323 ,  H01L29/78 ,  H01L27/11 ,  G06F111/20 ,  G06F119/18

Abstract: Measuring SRAM structures having FinFET transistors by obtaining, on a production semiconductor wafer, spectra of a SRAM production structure including FinFET fins and gates, identifying SRAM reference structure spectra corresponding to the spectra, the reference structure from measuring, on a reference semiconductor wafer, a reference structure including a layout of FinFET fins having gates, injecting, into an OCD model of the production structure, fin target parameter values, corresponding to the identified reference structure spectra, from measuring, on the reference wafer, a fin target including a layout of exposed FinFET fins lacking gates similar or identical to the reference structure layout, correspondence between the fin target parameter values and the reference structure spectra previously identified by ML, and determining measurement values for the FinFET gates of the production structure by fitting reference spectra associated with the production structure in the OCD model to the production structure spectra.

公开(公告)号：US10121711B2

公开(公告)日：2018-11-06

申请号：US14816708

申请日：2015-08-03

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Sipeng Gu ,  Xiang Hu ,  Alok Vaid ,  Lokesh Subramany ,  Akshey Sehgal

IPC: H01L29/10 ,  H01L29/76 ,  H01L21/82 ,  H01L21/66 ,  G01R31/26 ,  H01L27/088 ,  H01L21/8234 ,  H01L21/8238 ,  H01L27/092

Abstract: Approaches for providing a substrate having a planar metrology pad adjacent a set of fins of a fin field effect transistor (FinFET) device are disclosed. Specifically, the FinFET device comprises a finned substrate, and a planar metrology pad formed on the substrate adjacent the fins in a metrology measurement area of the FinFET device. Processing steps include forming a first hardmask over the substrate, forming a photoresist over a portion of the first hardmask in the metrology measurement area of the FinFET device, removing the first hardmask in an area adjacent the metrology measurement area remaining exposed following formation of the photoresist, patterning a set of openings in the substrate to form the set of fins in the FinFET device in the area adjacent the metrology measurement area, depositing an oxide layer over the FinFET device, and planarizing the FinFET device to form the planar metrology pad in the metrology measurement area.

公开(公告)号：US20160239012A1

公开(公告)日：2016-08-18

申请号：US15015614

申请日：2016-02-04

Applicant: GLOBALFOUNDRIES, INC.

Inventor： Givantha Iddawela ,  Alok Vaid

IPC: G05B19/401

CPC classification number: G01N21/9501 ,  G05B19/41875 ,  G05B2219/32179 ,  G05B2219/32182 ,  G05B2219/32187 ,  G05B2219/45031 ,  H01L22/10 ,  Y02P90/22

Abstract: Systems and methods for controlling manufacturing processes for microelectronic components are provided. In an exemplary embodiment, a method includes determining a specification range for a desired parameter. The microelectronic component is processed in a manufacturing tool, and a trace data set is recorded during the processing. An estimated trace data parameter is determined with the trace data set, and a first measured value of the microelectronic component is measured in a measurement tool. An estimated desired parameter is determined using the first measured value and the estimated trace data parameter, and the manufacturing process is adjusted when the estimated desired parameter is outside of the specification range.

Abstract translation: 提供了用于控制微电子部件的制造工艺的系统和方法。 在示例性实施例中，一种方法包括确定期望参数的规格范围。 在制造工具中处理微电子部件，并且在处理期间记录跟踪数据集。 使用跟踪数据集来确定估计的跟踪数据参数，并且在测量工具中测量微电子部件的第一测量值。 使用第一测量值和估计的跟踪数据参数来确定估计的期望参数，并且当估计的期望参数在规定范围之外时调整制造过程。

公开(公告)号：US20150340296A1

公开(公告)日：2015-11-26

申请号：US14816708

申请日：2015-08-03

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Sipeng Gu ,  Xiang Hu ,  Alok Vaid ,  Lokesh Subramany ,  Akshey Sehgal

IPC: H01L21/66 ,  H01L27/088

CPC classification number: H01L22/30 ,  G01R31/2621 ,  H01L21/823431 ,  H01L21/823821 ,  H01L27/0886 ,  H01L27/0924

Abstract: Approaches for providing a substrate having a planar metrology pad adjacent a set of fins of a fin field effect transistor (FinFET) device are disclosed. Specifically, the FinFET device comprises a finned substrate, and a planar metrology pad formed on the substrate adjacent the fins in a metrology measurement area of the FinFET device. Processing steps include forming a first hardmask over the substrate, forming a photoresist over a portion of the first hardmask in the metrology measurement area of the FinFET device, removing the first hardmask in an area adjacent the metrology measurement area remaining exposed following formation of the photoresist, patterning a set of openings in the substrate to form the set of fins in the FinFET device in the area adjacent the metrology measurement area, depositing an oxide layer over the FinFET device, and planarizing the FinFET device to form the planar metrology pad in the metrology measurement area.

Abstract translation: 公开了一种用于提供具有与翅片场效应晶体管（FinFET）器件的一组翅片相邻的平面度量垫的衬底的方法。 具体地说，FinFET器件包括鳍式衬底和在FinFET器件的度量测量区域中与衬底相邻的衬底上形成的平面度量垫。 处理步骤包括在衬底上形成第一硬掩模，在FinFET器件的测量测量区域中的第一硬掩模的一部分上形成光致抗蚀剂，在形成光致抗蚀剂之后，在与测量测量区域相邻的区域中残留的部分去除第一硬掩模 在衬底中图案化一组开口以在邻近测量测量区域的区域中的FinFET器件中形成一组鳍片，在FinFET器件上沉积氧化物层，以及平坦化FinFET器件，以形成平面度量板 计量测量领域。

公开(公告)号：US20140273299A1

公开(公告)日：2014-09-18

申请号：US13841919

申请日：2013-03-15

Applicant: GLOBALFOUNDRIES, INC.

Inventor： Alok Vaid ,  Carsten Hartig

IPC: H01L21/66 ,  G01D21/00

CPC classification number: H01L22/20 ,  G01D3/0365 ,  H01L21/02002 ,  H01L21/67248 ,  H01L21/67276 ,  H01L22/10 ,  H01L22/12 ,  H01L22/26

Abstract: Methods and systems are provided for fabricating and measuring physical features of a semiconductor device structure. An exemplary method of fabricating a semiconductor device structure involves obtaining a first measurement of a first attribute of the semiconductor device structure from a first metrology tool, obtaining process information pertaining to fabrication of one or more features of the semiconductor device structure by a first processing tool, and determining an adjusted measurement for the first attribute based at least in part on the first measurement in a manner that is influenced by the process information.

Abstract translation: 提供了用于制造和测量半导体器件结构的物理特征的方法和系统。 制造半导体器件结构的示例性方法包括从第一计量工具获得半导体器件结构的第一属性的第一测量，通过第一处理工具获得关于制造半导体器件结构的一个或多个特征的处理信息 并且至少部分地基于由所述处理信息影响的方式的所述第一测量来确定所述第一属性的调整的测量。

公开(公告)号：US10030971B2

公开(公告)日：2018-07-24

申请号：US15228772

申请日：2016-08-04

Applicant: GLOBALFOUNDRIES, Inc. ,  Nova Measuring Instruments Ltd.

Inventor： Cornel Bozdog ,  Alok Vaid ,  Sridhar Mahendrakar ,  Mainul Hossain ,  Taher Kagalwala

IPC: G01B15/02 ,  G01N23/22 ,  G01B11/06 ,  G01N23/2273 ,  H01L21/66 ,  H01L27/12

Abstract: A measurement method and system are presented for in-line measurements of one or more parameters of thin films in structures progressing on a production line. First measured data and second measured data are provided from multiple measurements sites on the thin film being measured, wherein the first measured data corresponds to first type measurements from a first selected set of a relatively small number of the measurement sites, and the second measured data corresponds to second type optical measurements from a second set of significantly higher number of the measurements sites. The first measured data is processed for determining at least one value of at least one parameter of the thin film in each of the measurement sites of said first set. Such at least one parameter value is utilized for interpreting the second measured data, thereby obtaining data indicative of distribution of values of said at least one parameter within said second set of measurement sites.

公开(公告)号：US09903707B2

公开(公告)日：2018-02-27

申请号：US14857914

申请日：2015-09-18

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Padraig Timoney ,  Alok Vaid

IPC: H01L21/02 ,  G01B11/06 ,  H01L21/66

CPC classification number: G01B11/06 ,  H01L22/12 ,  H01L22/20 ,  H01L22/26

Abstract: Methodologies and an apparatus for enabling three-dimensional scatterometry to be used to measure a thickness of dielectric layers in semiconductor devices are provided. Embodiments include initiating optical critical dimension (OCD) scatterometry on a three-dimensional test structure formed on a wafer, the three-dimensional test structure comprising patterned copper (Cu) trenches with an ultra-low k (ULK) dielectric film formed over the patterned Cu trenches; and obtaining, by a processor, a thickness of the ULK dielectric film based on results of the OCD scatterometry.

公开(公告)号：US20170038201A1

公开(公告)日：2017-02-09

申请号：US15228772

申请日：2016-08-04

Applicant: GLOBALFOUNDRIES, Inc.

Inventor： Cornel Bozdog ,  Alok Vaid ,  Sridhar Mahendrakar ,  Mainul Hossain ,  Taher Kagalwala

IPC: G01B15/02 ,  G01N23/227

CPC classification number: G01B15/02 ,  G01B11/0625 ,  G01B2210/56 ,  G01N23/2273 ,  G01N2223/61 ,  G01N2223/6116 ,  H01L22/20 ,  H01L27/12

Abstract: A measurement method and system are presented for in-line measurements of one or more parameters of thin films in structures progressing on a production line. First measured data and second measured data are provided from multiple measurements sites on the thin film being measured, wherein the first measured data corresponds to first type measurements from a first selected set of a relatively small number of the measurement sites, and the second measured data corresponds to second type optical measurements from a second set of significantly higher number of the measurements sites. The first measured data is processed for determining at least one value of at least one parameter of the thin film in each of the measurement sites of said first set. Such at least one parameter value is utilized for interpreting the second measured data, thereby obtaining data indicative of distribution of values of said at least one parameter within said second set of measurement sites.

Abstract translation: 提出了一种测量方法和系统，用于对在生产线上进行的结构中的薄膜的一个或多个参数进行在线测量。 第一测量数据和第二测量数据由被测量的薄膜上的多个测量点提供，其中第一测量数据对应于来自相对较少数量的测量位置的第一选定组的第一类型测量值，以及第二测量数据 对应于来自第二组显着更高数量的测量位点的第二类型光学测量。 处理第一测量数据以确定所述第一组的每个测量位置中的薄膜的至少一个参数的至少一个值。 这样的至少一个参数值用于解释第二测量数据，由此获得指示所述第二组测量位置内的所述至少一个参数的值分布的数据。